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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 811 records · Page 45
All sourcesNASA NTRSDOE OSTI
DOE OSTI2010

Role of strain in polarization switching in semipolar InGaN/GaN quantum wells

The effect of strain on the valence-band structure of (112¯2) semipolar InGaN grown on GaN substrates is studied. A k·p analysis reveals that anisotropic strain in the c -plane and shear strain are crucial for deciding the ordering of the two topmost valence bands. The shear-strain deformation potential D 6 is calculated for GaN and InN using density functional theory with the Heyd–Scuseria–Ernzerhof hybrid functional [J. Heyd, G. E. Scuseria, and M. Ernzerhof, J. Chem. Phys.124, 219906 (2006)]. Using our deformation potentials and assuming a pseudomorphically strained structure, no polarization switching is observed. We investigate the role of partial strain relaxation in the observed polarization switching.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Enhancing the thermoelectric figure of merit through the reduction of bipolar thermal conductivity with heterostructure barriers

In this paper, we present theoretically that the thermoelectric figure of merit for a semiconductor material with a small band gap can be significantly enhanced near the intrinsic doping regime at high temperatures via the suppression of bipolar thermal conductivity when the minority carriers are selectively blocked by heterostructure barriers. This scheme is particularly effective in nanostructured materials where the lattice thermal conductivity is lowered by increased phonon scatterings at the boundaries, so that the electronic thermal conductivity including the bipolar term is limiting the figure of merit $zT$. We show that $zT$ can be enhanced to above 3 for p-type PbTe, and above 2 for n-type PbTe at 900 K with minority carrier blocking, when the lattice thermal conductivity is as low as 0.3 W/m K.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Significant Reduction of Lattice Thermal Conductivity by the Electron-Phonon Interaction in Silicon with High Carrier Concentrations: A First-Principles Study

The electron-phonon interaction is well known to create major resistance to electron transport in metals and semiconductors, whereas fewer studies are directed to its effect on phonon transport, especially in semiconductors. Herein we calculate the phonon lifetimes due to scattering with electrons (or holes), combine them with the intrinsic lifetimes due to the anharmonic phonon-phonon interaction, all from first principles, and evaluate the effect of the electron-phonon interaction on the lattice thermal conductivity of silicon. Unexpectedly, we find a significant reduction of the lattice thermal conductivity at room temperature as the carrier concentration goes above 1019 cm –3 (the reduction reaches up to 45% in p-type silicon at around 1021 cm –3 ), a range of great technological relevance to thermoelectric materials.

42 ENGINEERING↗
DOE OSTI2013

Jumping-Droplet-Enhanced Condensation on Scalable Superhydrophobic Nanostructured Surfaces

When droplets coalesce on a superhydrophobic nanostructured surface, the resulting droplet can jump from the surface due to the release of excess surface energy. If designed properly, these superhydrophobic nanostructured surfaces can not only allow for easy droplet removal at micrometric length scales during condensation but also promise to enhance heat transfer performance. However, the rationale for the design of an ideal nanostructured surface as well as heat transfer experiments demonstrating the advantage of this jumping behavior are lacking. Here, we show that silanized copper oxide surfaces created via a simple fabrication method can achieve highly efficient jumping-droplet condensation heat transfer. We experimentally demonstrated a 25% higher overall heat flux and 30% higher condensation heat transfer coefficient compared to state-of-the-art hydrophobic condensing surfaces at low supersaturations (<1.12). This work not only shows significant condensation heat transfer enhancement but also promises a low cost and scalable approach to increase efficiency for applications such as atmospheric water harvesting and dehumidification. Furthermore, the results offer insights and an avenue to achieve high flux superhydrophobic condensation.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Resonant bonding leads to low lattice thermal conductivity

Understanding the lattice dynamics and low thermal conductivities of IV–VI, V 2 –VI 3 and V materials is critical to the development of better thermoelectric and phase-change materials. In this report we offer a link between chemical bonding and low thermal conductivity. Our first-principles calculations reveal that long-ranged interaction along the $\langle$100$\rangle$ direction of the rocksalt structure exist in lead chalcogenides, SnTe, Bi 2 Te 3 , Bi and Sb due to the resonant bonding that is common to all of them. This long-ranged interaction in lead chalcogenides and SnTe cause optical phonon softening, strong anharmonic scattering and large phase space for three-phonon scattering processes, which explain why rocksalt IV–VI compounds have much lower thermal conductivities than zincblende III–V compounds. The novel insights on the relationship between resonant bonding and low thermal conductivity will help in the development of better thermoelectric and phase change materials.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Observation of columnar microstructure in lattice-matched InAlN/GaN grown by plasma assisted molecular beam epitaxy

Nominally lattice matched InAlN/GaN was grown by plasma-assisted molecular beam epitaxy, and the intrinsic microstructure was investigated via x-ray diffraction, transmission electron microscopy, and atom probe tomography. The InAlN showed a cellular structure, which was comprised of ~10 nm wide Al-rich cores and ~1 nm In-rich InAlN intercellular boundaries. Despite the strong laterally non-uniform In distribution, both vertical and lateral lattices are unperturbed by the cellular structure, as evidenced by strong thickness fringes in on-axis ω-2θ high resolution x-ray diffraction scans, coherence lengths derived from on-axis (0002) and off-axis (10{anti 1}2) ω-2θ high resolution x-ray diffraction scans, and a modified Williamson-Hall analysis for on-axis reflections.

36 MATERIALS SCIENCE↗