SEARCH · Engineering Papers

Results for “Short circuiting”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 811 records · Page 45

All sources NASA NTRS DOE OSTI

NASA NTRS1985

Dual-band reactively loaded microstrip antenna

A previously derived theory is applied to a microstrip antenna with a reactive load to produce a dual-band radiator. A model consisting of a rectangular patch radiator loaded with a variable length short-circuited coaxial stub was investigated experimentally. Comparisons of theoretical predictions and experimental data are made for the impedance and resonant frequencies as a function of the position of the load, the length of the stub, and the characteristic impedance of the stub.

Richards, W. F.↗

NASA NTRS1985

Heat treatment of bulk gallium arsenide using a phosphosilicate glass cap

n-type bulk GaAs crystals, capped with chemically vapor-deposited phosphosilicate glass, were heat treated at temperatures in the range of 600 to 950 C. Measurements on Schottky diodes and solar cells fabricated on the heat-treated material, after removal of a damaged surface layer, show an increase in free-carrier concentration, in minority-carrier-diffusion length, and in solar-cell short-circuit current. The observed changes are attributed to a removal of lifetime-reducing acceptorlike impurities, defects, or their complexes.

Mathur, G.↗

NASA NTRS1984

Radiation effects in silicon and gallium arsenide solar cells using isotropic and normally incident radiation

Several types of silicon and gallium arsenide solar cells were irradiated with protons with energies between 50 keV and 10 MeV at both normal and isotropic incidence. Damage coefficients for maximum power relative to 10 MeV were derived for these cells for both cases of omni-directional and normal incidence. The damage coefficients for the silicon cells were found to be somewhat lower than those quoted in the Solar Cell Radiation Handbook. These values were used to compute omni-directional damage coefficients suitable for solar cells protected by coverglasses of practical thickness, which in turn were used to compute solar cell degradation in two proton-dominated orbits. In spite of the difference in the low energy proton damage coefficients, the difference between the handbook prediction and the prediction using the newly derived values was negligible. Damage coefficients for GaAs solar cells for short circuit current, open circuit voltage, and maximum power were also computed relative to 10 MeV protons. They were used to predict cell degradation in the same two orbits and in a 5600 nmi orbit. Results show the performance of the GaAs solar cells in these orbits to be superior to that of the Si cells.

Anspaugh, B. E.↗

NASA NTRS1984

Backside damage-gettering in cast polycrystalline silicon

The technique of backside-damage gettering improves the performance of short minority-carrier diffusion length, large-grain (grain diameter greater than 1 to 2 mm), cast polycrystalline silicon. On average, increases of nearly 20 percent in short-circuit current, 10 mV in open-circuit voltage, and 15 percent in peak-power were obtained by heat-treating 300 micron thick polycrystalline wafers at 1000 C in flowing nitrogen for 5 hours. Additional measurements of the bulk and space-charge recombination current components indicate that this improvement results from a significant increase in the minority-carrier diffusion length due to gettering of impurities from the bulk.

Culik, J.↗

NASA NTRS1984

The integration of bypass diodes with terrestrial photovoltaic modules and arrays

Bypass diodes are often required to limit the potential for reverse voltage 'hot-spot' heating in high voltage arrays or in arrays that undergo periodic operation near the short-circuit point. In addition, when properly applied, bypass diodes can minimize the effect of shadowing and various internal module failures on the array energy output. This paper discusses the mechanical and electrical integration of bypass diodes beginning with the array-level considerations which influence the selection of an implementation approach. Concepts for the mounting of these diodes, both internally within the module encapsulant and externally to the exposed rear surface of the module, are described. Factors affecting the reliability of bypass diodes, including the control of junction temperature through adequate heat sinking and the derating of reverse voltage, are discussed.

Shepard, N. F., Jr.↗

NASA NTRS1984

Predicting electrochemical breakdown in terrestrial photovoltaic modules

Electrochemical corrosion of PV cells can cause a cell-to-frame short circuit with two undesirable resuits: (1) catastrophic loss of source-circuit power; and (2) high field maintenance (module replacement) costs. Parameter dependencies are determined and encapsulated two-cell coupons are exposed to a range of voltage differences, temperatures, and relative humidities. Material relative performance is assessed. Nine different metallization-encapsulation combinations are tested.

Mon, G. R.↗

NASA NTRS1984

Proton damage in GaAs solar cells

A simplified model for the short-circuit current reduction caused by proton-induced radiation damage is described. The model accounts for the nonuniformity of defect production within heteroface GaAs shallow junction solar cells. The results from the model show agreement with the strong energy dependence observed in proton radiation damage experiments.

Wilson, J. W.↗

NASA NTRS1985

Hot-spot heating susceptibility due to reverse bias operating conditions

Because of field experience (indicating that cell and module degradation could occur as a result of hot spot heating), a laboratory test was developed at JPL to determine hot spot susceptibility of modules. The initial hot spot testing work at JPL formed a foundation for the test development. Test parameters are selected as follows. For high shunt resistance cells, the applied back bias test current is set equal to the test cell current at maximum power. For low shunt resistance cells, the test current is set equal to the cell short circuit current. The shadow level is selected to conform to that which would lead to maximum back bias voltage under the appropriate test current level. The test voltage is determined by the bypass diode frequency. The test conditions are meant to simulate the thermal boundary conditions for 100 mW/sq cm, 40C ambient environment. The test lasts 100 hours. A key assumption made during the development of the test is that no current imbalance results from the connecting of multiparallel cell strings. Therefore, the test as originally developed was applicable for single string case only.

Gonzalez, C. C.↗

NASA NTRS1985

High-efficiency AlGaAs-GaAs Cassegrainian concentrator cells

AlGaAs-GaAs heteroface space concentrator solar cells have been fabricated by metalorganic chemical vapor deposition. AMO efficiencies as high as 21.1% have been observed both for p-n and np structures under concentration (90 to 100X) at 25 C. Both cell structures are characterized by high quantum efficiencies and their performances are close to those predicted by a realistic computer model. In agreement with the computer model, the n-p cell exhibits a higher short-circuit current density.

Werthen, J. G.↗

NASA NTRS1985

Superlattices and multilayer structures for high efficiency solar cells

Possible applications of superlattices to photovoltaic structures are discussed. A new concept based on doping superstructures (NIPI) can be exploited to significantly reduce recombination losses in III-V compound solar cells. A novel multijunction structure with lateral current transport is proposed. A computer simulation has been performed which shows that by optimizing the multilayer structure, short circuit current is substantially increased with minimum drop in open circuit voltage. An additional advantage of the structure is enhanced radiation tolerance. It is anticipated that this multilayer structure can be incorporated in multibandgap cells to achieve high efficiencies.

Wagner, M.↗

NASA NTRS1985

Performance of Hughes GaAs concentrator cells under 1-MeV electron irradiation

Several Hughes gallium arsenide (GaAs) concentrator cells were exposed to 1-MeV electrons at fluences up to 1x10 to the 15th power electrons/sq cm. Performance data were taken after several fluences, at two temperatures, and at concentration levels from 1 to approx. 150x AMO. Data at 1 sun and 25 deg C were taken with an X-25 xenon-lamp solar simulator. Data at concentration were taken using a pulsed solar simulator with the assumption of a linear relationship between short-circuit current and irradiance. The cells are 5 by 5 mm with a 4-mm diameter illuminated area.

Curtis, H. B.↗

NASA NTRS1985

Thermal stress cycling of GaAs solar cells

A thermal cycling experiment was performed on GaAs solar cells to establish the electrical and structural integrity of these cells under the temperature conditions of a simulated low-Earth orbit of 3-year duration. Thirty single junction GaAs cells were obtained and tests were performed to establish the beginning-of-life characteristics of these cells. The tests consisted of cell I-V power output curves, from which were obtained short-circuit current, open circuit voltage, fill factor, and cell efficiency, and optical micrographs, spectral response, and ion microprobe mass analysis (IMMA) depth profiles on both the front surfaces and the front metallic contacts of the cells. Following 5,000 thermal cycles, the performance of the cells was reexamined in addition to any factors which might contribute to performance degradation. It is established that, after 5,000 thermal cycles, the cells retain their power output with no loss of structural integrity or change in physical appearance.

Janousek, B. K.↗

NASA NTRS1986

A general numerical analysis program for the superconducting quasiparticle mixer

A user-oriented computer program SISCAP (SIS Computer Analysis Program) for analyzing SIS mixers is described. The program allows arbitrary impedance terminations to be specified at all LO harmonics and sideband frequencies. It is therefore able to treat a much more general class of SIS mixers than the widely used three-frequency analysis, for which the harmonics are assumed to be short-circuited. An additional program, GETCHI, provides the necessary input data to program SISCAP. The SISCAP program performs a nonlinear analysis to determine the SIS junction voltage waveform produced by the local oscillator. The quantum theory of mixing is used in its most general form, treating the large signal properties of the mixer in the time domain. A small signal linear analysis is then used to find the conversion loss and port impedances. The noise analysis includes thermal noise from the termination resistances and shot noise from the periodic LO current. Quantum noise is not considered. Many aspects of the program have been adequately verified and found accurate.

Hicks, R. G.↗

NASA NTRS1985

Heavy doping considerations and measurements in high-efficiency cells

Theoretical work on heavily doped silicon was described. Heavily doped polysilicon was used as a back-surface passivant replacing the usual back-surface field (BSF). Very good first results were achieved and there is the promise of a simple, low temperature deposition process. Short-circuit current-decay measurement methods were also covered.

Lindholm, F.↗

NASA NTRS1985

Amorphous-silicon module hot-spot testing

Hot spot heating occurs when cell short-circuit current is lower than string operating current. Amorphous cell hot spot are tested to develop the techniques required for performing reverse bias testing of amorphous cells. Also, to quantify the response of amorphous cells to reverse biasing. Guidelines are developed from testing for reducing hot spot susceptibility of amorphous modules and to develop a qualification test for hot spot testing of amorphous modules. It is concluded that amorphous cells undergo hot spot heating similarly to crystalline cells. Comparison of results obtained with submodules versus actual modules indicate heating levels lower in actual modules. Module design must address hot spot testing and hot spot qualification test conducted on modules showed no instabilities and minor cell erosion.

Gonzalez, C. C.↗

NASA NTRS1986

An IBM PC-based math model for space station solar array simulation

This report discusses and documents the design, development, and verification of a microcomputer-based solar cell math model for simulating the Space Station's solar array Initial Operational Capability (IOC) reference configuration. The array model is developed utilizing a linear solar cell dc math model requiring only five input parameters: short circuit current, open circuit voltage, maximum power voltage, maximum power current, and orbit inclination. The accuracy of this model is investigated using actual solar array on orbit electrical data derived from the Solar Array Flight Experiment/Dynamic Augmentation Experiment (SAFE/DAE), conducted during the STS-41D mission. This simulator provides real-time simulated performance data during the steady state portion of the Space Station orbit (i.e., array fully exposed to sunlight). Eclipse to sunlight transients and shadowing effects are not included in the analysis, but are discussed briefly. Integrating the Solar Array Simulator (SAS) into the Power Management and Distribution (PMAD) subsystem is also discussed.

Emanuel, E. M.↗

NASA NTRS1985

Dual-band microstrip antennas with monolithic reactive loading

The design and experimental measurement of a dual-band, monolithic microstrip antenna is presented. The structure utilises a short-circuited length of microstrip transmission line to provide reactive loading and, thereby, retains the low-profile characteristic of a normal microstrip patch radiator.

Davidson, S. E.↗

NASA NTRS1985

Generalized reciprocity theorem for semiconductor devices

A reciprocity theorem is presented that relates the short-circuit current of a device, induced by a carrier generation source, to the minority-carrier Fermi level in the dark. The basic relation is general under low injection. It holds for three-dimensional devices with position dependent parameters (energy gap, electron affinity, mobility, etc.), and for transient or steady-state conditions. This theorem allows calculation of the internal quantum efficiency of a solar cell by using the analysis of the device in the dark. Other applications could involve measurements of various device parameters, interfacial surface recombination velocity at a polcrystalline silicon emitter contact, for rexample, by using steady-state or transient photon or mass-particle radiation.

Misiakos, K.↗