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At least 811 records · Page 45

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NASA NTRS2003

Silicon Membrane Mirrors with Electrostatic Shape Actuators

Efforts are under way to develop deformable mirrors equipped with microscopic electrostatic actuators that would be used to maintain their reflective surfaces in precise shapes required for their intended applications. Unlike actuators that depend on properties of materials (e.g., piezoelectric and electrostrictive actuators), electrostatic actuators are effective over a wide temperature range. A mirror of the present type would be denoted a MEMSDM (for microelectromechanical system deformable mirror). The reflective surface of such a mirror would be formed on a single-crystal silicon membrane that would be attached by posts to a silicon actuator membrane that would, in turn, be attached by posts to a rigid silicon base (see figure). The actuator membrane would serve as the upper electrode of a capacitor. Multiple lower electrodes, each occupying a conveniently small fraction of the total area, would be formed on an electrically insulating oxide layer on the base, thereby defining a multiplicity of actuator pixels. The actuator membrane would be corrugated in a pattern that would impart mechanical compliance needed for relaxation of operational and fabrication-induced stresses and to minimize the degree of nonlinearity of deformations. The compliance afforded by the corrugations would also help to minimize the undesired coupling of deformations between adjacent pixels (a practical goal being to keep the influence coefficient between adjacent pixels below 10 percent).

Yang, Eui-Hyeok↗

NASA NTRS2011

Silicon Carbide Mounts for Fabry-Perot Interferometers

Etalon mounts for tunable Fabry- Perot interferometers can now be fabricated from reaction-bonded silicon carbide structural components. These mounts are rigid, lightweight, and thermally stable. The fabrication of these mounts involves the exploitation of post-casting capabilities that (1) enable creation of monolithic structures having reduced (in comparison with prior such structures) degrees of material inhomogeneity and (2) reduce the need for fastening hardware and accommodations. Such silicon carbide mounts could be used to make lightweight Fabry-Perot interferometers or could be modified for use as general lightweight optical mounts. Heretofore, tunable Fabry-Perot interferometer structures, including mounting hardware, have been made from the low-thermal-expansion material Invar (a nickel/iron alloy) in order to obtain the thermal stability required for spectroscopic applications for which such interferometers are typically designed. However, the high mass density of Invar structures is disadvantageous in applications in which there are requirements to minimize mass. Silicon carbide etalon mounts have been incorporated into a tunable Fabry-Perot interferometer of a prior design that originally called for Invar structural components. The strength, thermal stability, and survivability of the interferometer as thus modified are similar to those of the interferometer as originally designed, but the mass of the modified interferometer is significantly less than the mass of the original version.

Lindemann, Scott↗

NASA NTRS2011

Development of an Extreme High Temperature n-type Ohmic Contact to Silicon Carbide

We report on the initial demonstration of a tungsten-nickel (75:25 at. %) ohmic contact to silicon carbide (SiC) that performed for up to fifteen hours of heat treatment in argon at 1000 C. The transfer length method (TLM) test structure was used to evaluate the contacts. Samples showed consistent ohmic behavior with specific contact resistance values averaging 5 x 10-4 -cm2. The development of this contact metallization should allow silicon carbide devices to operate more reliably at the present maximum operating temperature of 600 C while potentially extending operations to 1000 C. Introduction Silicon Carbide (SiC) is widely recognized as one of the materials of choice for high temperature, harsh environment sensors and electronics due to its ability to survive and continue normal operation in such environments [1]. Sensors and electronics in SiC have been developed that are capable of operating at temperatures of 600 oC. However operating these devices at the upper reliability temperature threshold increases the potential for early degradation. Therefore, it is important to raise the reliability temperature ceiling higher, which would assure increased device reliability when operated at nominal temperature. There are also instances that require devices to operate and survive for prolonged periods of time above 600 oC [2, 3]. This is specifically needed in the area of hypersonic flight where robust sensors are needed to monitor vehicle performance at temperature greater than 1000 C, as well as for use in the thermomechanical characterization of high temperature materials (e.g. ceramic matrix composites). While SiC alone can withstand these temperatures, a major challenge is to develop reliable electrical contacts to the device itself in order to facilitate signal extraction

Evans, Laura J.↗

NASA NTRS2011

Method for Impeding Degradation of Porous Silicon Structures

This invention relates to surface modification of porosified silicon (pSi) structures with poly(alkylene) glycols for the purpose of controlled degradation of the silicon matrix and tailored release of encapsulated substances for biomedical applications. The pSi structures are currently used in diverse biomedical applications including bio-molecular screening, optical bio-sensoring, and drug delivery by means of injectable/orally administered carriers and implantable devices. The size of the pores and the surface chemistry of the pSi structure can be controlled during the microfabrication process and thereafter. A fine regulation of the degradation kinetics of mesoporous silicon structures is of fundamental importance. Polyethylene glycols (PEGs) represent the major category of surface modifying agents used in classical drug delivery systems and in pharmaceutical dosage forms. PEGylation enables avoidance of RES uptake, thus prolonging circulation time of intravenously injectable nanovectors. PEG molecules demonstrate little toxicity and immunogenicity, and are cleared from the body through the urine (molecular weight, MW less than 30 kDa) or in the feces (MW greater than 30kDa). The invention focuses on the possibility of finely tuning the degradation kinetics of the pSi nanovectors and other structures through surface conjugation of PEGs with various backbone lengths/MWs. To prove the concept, pSi nanovectors were covalently conjugated to seven PEGs with MW from 245 to 5,000 Da and their degradation kinetics in physiologically relevant media (phosphate buffer saline, PBS pH7.4, and fetal bovine serum) was assessed by the elemental analysis of the Si using inductive coupled plasma atomic emission spectroscopy (ICP-AES). The conjugation of the PEG with lowest MW to the nanovectors surface did not induce any change in the degradation kinetics in serum, but inhibited degradation and consequently the release of orthosilicic acid into buffer. When PEGs with the longer chains were evaluated, Si mass loss from the nanovectors was slowed down, and the PEGylated structures were almost fully degraded within 18 24 hours in serum and within 48 hours in PBS. The most dramatic effect was observed for high MW PEGs 3,400 and 5,000 Da, which prominently inhibited the degradation of the systems, with complete degradation achieved only after four days. For these PEGs, during the early stages of the degradation, there was a lag period of little or no Si mass loss from the nanovector. The obtained profiles were in agreement with the erosion of the nanovector surface as observed by scanning electron microscopy.

Vilentchouk, Biana Godin↗

NASA NTRS2009

The Active Oxidation of Silicon Carbide

The high temperature oxidation of silicon carbide occurs in two very different modes. Passive oxidation forms a protective oxide film which limits further attack of the SiC: SiC(s) + 3/2 O2(g) = SiO2(s) + CO(g) Active oxidation forms a volatile oxide and may lead to extensive attack of the SiC: SiC(s) + O2(g) = SiO(g) + CO(g) Generally passive oxidation occurs at higher oxidant pressures and active oxidation occurs at lower oxidant pressures and elevated temperatures. Active oxidation is a concern for reentry, where the flight trajectory involves the latter conditions. Thus the transition points and rates of active oxidation are a major concern. Passive/active transitions have been studied by a number of investigators. An examination of the literature indicates many questions remain regarding the effect of impurity, the hysteresis of the transition (i.e. the difference between active-to-passive and passive-toactive), and the effect of total pressure. In this study we systematically investigate each of these effects. Experiments were done in both an alumina furnace tube and a quartz furnace tube. It is known that alumina tubes release impurities such as sodium and increase the kinetics in the passive region [1]. We have observed that the active-to-passive transition occurs at a lower oxygen pressure when the experiment is conducted in alumina tubes and the resultant passive silica scale contains sodium. Thus the tests in this study are conducted in quartz tubes. The hysteresis of the transition has been discussed in the detail in the original theoretical treatise of this problem for pure silicon by Wagner [2], yet there is little mention of it in subsequent literature. Essentially Wagner points out that the active-to-passive transition is governed by the criterion for a stable Si/SiO2 equilibria and the passive-to-active transition is governed by the decomposition of the SiO2 film. A series of experiments were conducted for active-to-passive and passive-to-active transitions by increasing and decreasing oxygen pressure, respectively. For pure silicon a dramatic difference was found; whereas for SiC the difference was not as great. This may be due to the oxidation of the carbon in SiC which may break down the scale [3]. The third area is the effect of total pressure. In the literature, low oxygen potentials are achieved via either low total pressure or low oxygen pressure in an O2/Ar mixture. Both types of experiments are done in this study and the differences are discussed with regard to the presence or absence of a boundary layer.

Jacobson, Nathan S.↗

NASA NTRS2012

Influence of Containment on the Growth of Silicon-Germanium: A Materials Science Flight Project

This investigation involves the comparison of results achieved from three types of crystal growth of germanium and germanium-silicon alloys: (1) Float zone growth (2) Bridgman growth (3) Detached Bridgman growth crystal The fundamental goal of the proposed research is to determine the influence of containment on the processing-induced defects and impurity incorporation in germanium-silicon (GeSi) crystals (silicon concentration in the solid up to 5 at%) for three different growth configurations in order to quantitatively assess the improvements of crystal quality possible by detached growth.

Volz, M. P.↗

NASA NTRS2012

Fabrication of a Silicon Backshort Assembly for Waveguide-Coupled Superconducting Detectors

The Cosmology Large Angular Scale Surveyor (CLASS) is a ground-based instrument that will measure the polarization of the cosmic microwave background to search for evidence for gravitational waves from a posited epoch of inflation early in the Universe s history. This measurement will require integration of superconducting transition-edge sensors with microwave waveguide inputs with excellent control of systematic errors, such as unwanted coupling to stray signals at frequencies outside of a precisely defined microwave band. To address these needs we present work on the fabrication of micromachined silicon, producing conductive quarter-wave backshort assemblies for the CLASS 40 GHz focal plane. Each 40 GHz backshort assembly consists of three degeneratively doped silicon wafers. Two spacer wafers are micromachined with through-wafer vias to provide a 2.04 mm long square waveguide delay section. The third wafer terminates the waveguide delay in a short. The three wafers are bonded at the wafer level by Au-Au thermal compression bonding then aligned and flip chip bonded to the CLASS detector at the chip level. The micromachining techniques used have been optimized to create high aspect ratio waveguides, silicon pillars, and relief trenches with the goal of providing improved out of band signal rejection. We will discuss the fabrication of integrated CLASS superconducting detector chips with the quarter-wave backshort assemblies.

Crowe, Erik J.↗

NASA NTRS2014

Thermophysical Property Measurements of Silicon-Transition Metal Alloys

Metals and metallic alloys often have high melting temperatures and highly reactive liquids. Processing reactive liquids in containers can result in significant contamination and limited undercooling. This is particularly true for molten silicon and it alloys. Silicon is commonly termed "the universal solvent". The viscosity, surface tension, and density of several silicon‐transition metal alloys were determined using the Electrostatic Levitator system at the Marshall Space Flight Center. The temperature dependence of the viscosity followed an Arrhenius dependence, and the surface tension followed a linear temperature dependence. The density of the melts, including the undercooled region, showed a linear behavior as well. Viscosity and surface tension values were obtain for several of the alloys in the undercooled region.

Banish, R. Michael↗

NASA NTRS2013

Silicon Micromachining for Terahertz Component Development

Waveguide component technology at terahertz frequencies has come of age in recent years. Essential components such as ortho-mode transducers (OMT), quadrature hybrids, filters, and others for high performance system development were either impossible to build or too difficult to fabricate with traditional machining techniques. With micromachining of silicon wafers coated with sputtered gold it is now possible to fabricate and test these waveguide components. Using a highly optimized Deep Reactive Ion Etching (DRIE) process, we are now able to fabricate silicon micromachined waveguide structures working beyond 1 THz. In this paper, we describe in detail our approach of design, fabrication, and measurement of silicon micromachined waveguide components and report the results of a 1 THz canonical E-plane filter.

Filter↗

NASA NTRS2011

Implementation Challenges for Sintered Silicon Carbide Fiber Bonded Ceramic Materials for High Temperature Applications

During the last decades, a number of fiber reinforced ceramic composites have been developed and tested for various aerospace and ground based applications. However, a number of challenges still remain slowing the wide scale implementation of these materials. In addition to continuous fiber reinforced composites, other innovative materials have been developed including the fibrous monoliths and sintered fiber bonded ceramics. The sintered silicon carbide fiber bonded ceramics have been fabricated by the hot pressing and sintering of silicon carbide fibers. However, in this system reliable property database as well as various issues related to thermomechanical performance, integration, and fabrication of large and complex shape components has yet to be addressed. In this presentation, thermomechanical properties of sintered silicon carbide fiber bonded ceramics (as fabricated and joined) will be presented. In addition, critical need for manufacturing and integration technologies in successful implementation of these materials will be discussed.

Singh, M.↗

NASA NTRS2015

High Temperature Joining and Characterization of Joint Properties in Silicon Carbide-Based Composite Materials

Advanced silicon carbide-based ceramics and composites are being developed for a wide variety of high temperature extreme environment applications. Robust high temperature joining and integration technologies are enabling for the fabrication and manufacturing of large and complex shaped components. The development of a new joining approach called SET (Single-step Elevated Temperature) joining will be described along with the overview of previously developed joining approaches including high temperature brazing, ARCJoinT (Affordable, Robust Ceramic Joining Technology), diffusion bonding, and REABOND (Refractory Eutectic Assisted Bonding). Unlike other approaches, SET joining does not have any lower temperature phases and will therefore have a use temperature above 1315C. Optimization of the composition for full conversion to silicon carbide will be discussed. The goal is to find a composition with no remaining carbon or free silicon. Green tape interlayers were developed for joining. Microstructural analysis and preliminary mechanical tests of the joints will be presented.

Joining↗

NASA NTRS2015

Extreme-Environment Silicon-Carbide (SiC) Wireless Sensor Suite

Phase II objectives: Develop an integrated silicon-carbide wireless sensor suite capable of in situ measurements of critical characteristics of NTP engine; Compose silicon-carbide wireless sensor suite of: Extreme-environment sensors center, Dedicated high-temperature (450 deg C) silicon-carbide electronics that provide power and signal conditioning capabilities as well as radio frequency modulation and wireless data transmission capabilities center, An onboard energy harvesting system as a power source.

Yang, Jie↗

NASA NTRS2016

Multi-Step Deep Reactive Ion Etching Fabrication Process for Silicon-Based Terahertz Components

A multi-step silicon etching process has been developed to fabricate silicon-based terahertz (THz) waveguide components. This technique provides precise dimensional control across multiple etch depths with batch processing capabilities. Nonlinear and passive components such as mixers and multipliers waveguides, hybrids, OMTs and twists have been fabricated and integrated into a small silicon package. This fabrication technique enables a wafer-stacking architecture to provide ultra-compact multi-pixel receiver front-ends in the THz range.

Jung-Kubiak, Cecile↗

NASA NTRS2017

Composite Reflective Absorptive IR-Blocking Filters Embedded in Metamaterial Antireflection Coated Silicon

Infrared (IR)-blocking filters are crucial for controlling the radiative loading on cryogenic systems and for optimizing the sensitivity of bolometric detectors in the far-IR. We present a new IR filter approach based on a combination of patterned frequency-selective structures on silicon and a thin (2575 micron thick) absorptive composite based on powdered reststrahlen absorbing materials. For a 300 K blackbody, this combination reflects approximately 50% of the incoming light and blocks greater than.99.8% of the total power with negligible thermal gradients and excellent low-frequency transmission. This allows a reduction in the IR thermal loading to negligible levels in a single cold filter. These composite filters are fabricated on silicon substrates, which provide excellent thermal transport laterally through the filter and ensure that the entire area of the absorptive filter stays near the bath temperature. A metamaterial antireflection coating cut into these substrates reduces in-band reflections to below 1%, and the in-band absorption of the powder mix is below 1% for signal bands below 750 GHz. This type of filter can be directly incorporated into silicon refractive optical elements.

Munson, C. D.↗

NASA NTRS2017

Influence of Containment on the Growth of Germanium-Silicon in Microgravity

This investigation involves the comparison of results achieved from three types of crystal growth of germanium and germanium-silicon alloys: Float zone growth, Bridgman growth, and Detached Bridgman growth. The fundamental goal of the proposed research is to determine the influence of containment on the processing-induced defects and impurity incorporation in germanium-silicon (GeSi) crystals (silicon concentration in the solid up to 5%) for three different growth configurations in order to quantitatively assess the improvements of crystal quality possible by detached growth.

Volz, M. P.↗

NASA NTRS2016

Silicon Emitter Needle and Array Design for Indium Electrospray Arrays for Spacecraft Propulsion

A design for silicon microfabricated emitter arrays was developed for electrospray thrusters for indium propellant in compact architectures with scalable thrust, low mass and volume, high specific impulse and high efficiency operation. The design elements include tip height, height uniformity across the array, tip radii, axial groove depth, tip angle, emitter shank sidewall angle and number of emitters. They were derived from commercial liquid metal ion source designs and modeling, fabrication and test results. The most critical results of the emitter array design analysis suggest that microfabricated silicon emitter array emitters should have a height greater than 280 microns with a height uniformity of +/-10 microns, a tip half angle of 49° for uniform turn-on voltages and current across the array, low beam divergence and high mass utilization efficiency. Elements of the design were fabricated and demonstrated in single emitter and in 400 element emitter arrays to validate the design, fabrication and performance capability. The design height and uniformity of arrays was demonstrated for 85% of the emitters in a prototype array. Required tip and sidewall angles and groove depths have been microfabricated. Single microfabricated silicon emitters demonstrated better performance in current and voltage characteristics than commercially available liquid metal ion sources. Microfabricated emitters and arrays demonstrated the required current and stability performance to enable the MEP thruster development for indium propellant.

Marrese-Reading, Colleen M.↗

NASA NTRS2019

The Bidirectional Reflectance of Black Silicon Used in Space and Earth Remote Sensing Applications

Space-based astrophysical and remote sensing observations often require the detection and measurement of light originating from distant and relatively faint objects. These observations are highly susceptible to scattered light which may introduce imaging artifacts, obscure object details, and increase measurement noise. This paper describes the initial work of characterizing representative black materials used in coronagraph instruments and other spaceborne instruments. Measurements of “blackness” and the achieved reflectance of black silicon are provided in the spectral range from 400nm to 2500nm using 8o directional hemispherical measurements. The bidirectional reflectance of black silicon was also measured at discrete wavelengths, 633nm, and 1064nm, using the optical scatterometer located at NASA Goddard Space Flight Center’s Diffuser Calibration Laboratory (DCL). A 100mm diameter black silicon sample was fabricated and optically characterized. The BRDF of other well-known black materials such as Z306 and Fractal Black are also presented and discussed.

Georgiev, Georgi T.↗

NASA NTRS2019

The Bidirectional Reflectance of Black Silicon Used in Space and Earth Remote Sensing Applications

Georgiev, Georgi T.↗