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At least 811 records · Page 45

Fabrication of Thin Film Heat Flux Sensors

Prototype thin film heat flux sensors have been constructed and tested. The sensors can be applied to propulsion system materials and components. The sensors can provide steady state and fast transient heat flux information. Fabrication of the sensor does not require any matching of the mounting surface. Heat flux is proportional to the temperature difference across the upper and lower surfaces of an insulation material. The sensor consists of an array of thermocouples on the upper and lower surfaces of a thin insulating layer. The thermocouples for the sensor are connected in a thermopile arrangement. A 100 thermocouple pair heat flux sensor has been fabricated on silicon wafers. The sensor produced an output voltage of 200-400 microvolts when exposed to a hot air heat gun. A 20 element thermocouple pair heat flux sensor has been fabricated on aluminum oxide sheet. Thermocouples are Pt-Pt/Rh with silicon dioxide as the insulating material. This sensor produced an output of 28 microvolts when exposed to the radiation of a furnace operating at 1000 C. Work is also underway to put this type of heat flux sensor on metal surfaces.

Will, Herbert A.↗

Formation of Leading-Edge Pinholes in the Space Shuttle Wings Investigated

The space shuttle wing leading edge and nose cap are composed of a carbon/carbon composite that is protected by silicon carbide. The coefficient of thermal expansion mismatch leads to cracks in the silicon carbide. The outer coating of the silicon carbide is a sodium-silicate-based glass that becomes fluid at the shuttles high reentry temperatures and fills these cracks. Small pinholes roughly 0.1 mm in diameter have been observed on these materials after 12 or more flights. These pinholes have been investigated by researchers at the NASA Johnson Space Center, Rockwell International, the Boeing Company, Lockheed Martin Corporation, and the NASA Glenn Research Center at Lewis Field to determine the possible sources and the extent of damage. A typical pinhole is illustrated in the photomicrographs. These pinholes are found primarily on the wing leading edges and not on the nose cap, which is covered when the orbiter is on the launch pad. The pinholes are generally associated with a bead of zincrich glass. Examination of the orbiter and launch structure indicates that weathering paint on the launch structure leads to deposits of zinc-containing paint flakes on the wing leading edge. These may become embedded in the crevices of the wing leading edge and form the observed zinc-rich glass. Laboratory experiments indicate that zinc oxide reacts vigorously with the glass coating on the silicon carbide. Thus, it is likely that this is the reaction that leads to pinhole formation (Christensen, S.V.: Reinforced Carbon/Carbon Pin Hole Formation Through Zinc Oxide Attack. Rockwell International Internal Letter, RDW 96 057, May 1996). Cross-sectional examination of pinholes suggests that they are enlarged thermal expansion mismatch cracks. This is illustrated in the photomicrographs. A careful microstructural analysis indicates that the pinhole walls consist of layers of zinc-containing glass. Thus, pinholes are likely formed by zinc oxide particles lodging in crevices and forming a corrosive zinc-rich glass that enlarges existing cracks. Having established the likely source of the pinholes, we next needed to model the damage. Our concern was that if a pinhole went through the silicon carbide to the carbon/carbon substrate, oxygen would have a clear path to oxidize the carbon at high temperatures. This possibility was examined with studies in a laboratory furnace. An ultrasonic drill was used to make artificial pinholes in a sample of protected carbon/carbon. After exposure, the specimens were weighed and cross-sectioned to quantify the extent of oxidation below the pinhole. The results at higher temperatures showed good agreement with a simple diffusion-control model. This model is based on the two-step oxidation of carbon to carbon monoxide and carbon dioxide. The fluxes are illustrated in the final figure. The model indicates a strong dependence on pinhole diameter. For smaller diameters and short times, the oxidation of carbon is very limited.

Jacobson, Nathan S.↗

Recent developments in high temperature coatings for gas turbine airfoils

The importance of coatings for hot section airfoils has increased with the drive for more cost-effective use of fuel in a wide variety of gas turbine engines. Minor additions of silicon have been found to appreciably increase the oxidation resistance of plasma-sprayed NiCoCrAlY coatings on a single crystal nickel-base superalloy. Increasing the chromium content of MCrAlY coatings substantially increases the resistance to acidic (Na2SO4-SO3) hot corrosion at temperatures of about 1300 F (704 C) but gives no significant improvement beyond contemporary coatings in the range of 1600 F (871 C). Surface enrichment of MCrAlY coatings with silicon also gives large increases in resistance to acidic hot corrosion in the 1300 F region. The resistance to the thermal stress-induced spalling of zirconia-based thermal barrier coatings has been improved by lowering coating stresses with segmented structures and by controlling the substrate temperature during coating fabrication.

Goward, G. W.↗

Improving Lithium Metal Composite Anodes with Seeding and Pillaring Effects of Silicon Nanoparticles

Metallic lithium (Li) anodes are crucial for the development of high specific energy batteries yet plagued by their poor cycling efficiency. Electrode architecture engineering is vital for maintaining a stable anode volume and suppress Li corrosion during cycling. In this paper, a reduced graphene oxide “host” framework for Li metal anodes is further optimized by embedding silicon (Si) nanoparticles between the graphene layers. They serve as Li nucleation seeds to promote Li deposition within the framework even without pre-stored Li. Meanwhile, the LixSi alloy particles serve as supporting “pillars” between the graphene layers, enabling a minimized thickness shrinkage after full stripping of metallic Li. Combined with a Li compatible electrolyte, 99.4% Coulombic efficiency over ~600 cycles is achieved, and stable cycling of a Li||NMC532 full cell for ~380 cycles with negligible capacity decay is realized.

Wang, Hansen↗

Beyond Substrates: Strain Engineering of Ferroelectric Membranes

Strain engineering in perovskite oxides provides for dramatic control over material structure, phase, and properties, but is restricted by the discrete strain states produced by available high-quality substrates. Here, using the ferroelectric BaTiO3, production of precisely strain-engineered, substrate-released nanoscale membranes is demonstrated via an epitaxial lift-off process that allows the high crystalline quality of films grown on substrates to be replicated. In turn, fine structural tuning is achieved using interlayer stress in symmetric trilayer oxide-metal/ferroelectric/oxide-metal structures fabricated from the released membranes. Additionally, in devices integrated on silicon, the interlayer stress provides deterministic control of ordering temperature (from 75 to 425 °C) and releasing the substrate clamping is shown to dramatically impact ferroelectric switching and domain dynamics (including reducing coercive fields to <10 kV cm-1 and improving switching times to <5 ns for a 20 µm diameter capacitor in a 100-nm-thick film). In devices integrated on flexible polymers, enhanced room-temperature dielectric permittivity with large mechanical tunability (a 90% change upon ±0.1% strain application) is demonstrated. This approach paves the way toward the fabrication of ultrafast CMOS-compatible ferroelectric memories and ultrasensitive flexible nanosensor devices, and it may also be leveraged for the stabilization of novel phases and functionalities not achievable via direct epitaxial growth.

36 MATERIALS SCIENCE↗

Study of the effects of gaseous environmental on the hot corrosion of superalloy materials

Studies have been conducted to examine the effect of low concentrations of NaCl(g) on the high temperature oxidation behavior of complex superalloys and potential coating formulations modified by silicon and reactive element (i.e., yttrium and hafnium) additions. Depending on alloy composition, a variety of effects were thermogravimetrically produced. Aluminum free alloys such as MAR-M509 and Hastelloy X with molybdenum and tungsten in solid solution showed accelerated (or breakaway) kinetics similar to that observed for Ni-Cr alloys. For IN-792, an alloy high in chromium and low in aluminum, molybdenum and tungsten present in solid solution does not adversely affect oxidation kinetics in the presence of NaCl(g). On the other hand, nickel-base alloys high in aluminum and molybdenum are catastrophically attacked by NaCl-bearing atmospheres. Silicon additions were, in general, observed to slightly improve the oxidation resistance of Ni, Ni-40Cr and CoCrAlY compositions in NaCl(g)-bearing atmospheres. To the degree that processes responsible for Al2O3 whisker formation deleteriously affect protective scale adherence, the addition of yttrium or hafnium can inhibit such whisker growth.

Smeggil, J. G.↗

Foreign Object Damage in Ytterbium Disilicate Based Environmental Barrier Coatings Modified for Oxidation Resistance

Environmental barrier coatings (EBCs) have been developed as an enabling technology for silicon carbide based ceramic matrix composites (CMCs) in gas turbine engines. Two of the key failure mechanisms identified in EBC systems are foreign object damage (FOD) and the oxidative growth of a SiO 2 thermally grown oxide (TGO) layer that can lead to premature coating spallation. Previously the effects of FOD on NASA’s ytterbium disilicate based EBC were studied and recently it was shown that the addition of oxide modifiers resulted in improved oxidation resistance in the EBC. This work will compare FOD of the baseline ytterbium disilicate EBC to that of the modified EBC. FOD was performed at room temperature using a 1.59 mm hardened steel ball with projectile velocities of 50-300 m/s. Additionally, the effects of oxidation via cyclic steam exposure prior to impact were investigated.

foreign object damage (FOD)↗

Model for thickness dependence of radiation charging in MOS structures

The model considers charge buildup in MOS structures due to hole trapping in the oxide and the creation of sheet charge at the silicon interface. The contribution of hole trapping causes the flatband voltage to increase with thickness in a manner in which square and cube dependences are limiting cases. Experimental measurements on samples covering a 200 - 1000 A range of oxide thickness are consistent with the model, using independently obtained values of hole-trapping parameters. An important finding of our experimental results is that a negative interface charge contribution due to surface states created during irradiation compensates most of the positive charge in the oxide at flatband. The tendency of the surface states to 'track' the positive charge buildup in the oxide, for all thicknesses, applies both in creation during irradiation and in annihilation during annealing. An explanation is proposed based on the common defect origin of hole traps and potential surface states.

Viswanathan, C. R.↗

Direct Electrolysis of Molten Lunar Regolith for the Production of Oxygen and Metals on the Moon

When considering the construction of a lunar base, the high cost ($ 100,000 a kilogram) of transporting materials to the surface of the moon is a significant barrier. Therefore in-situ resource utilization will be a key component of any lunar mission. Oxygen gas is a key resource, abundant on earth and absent on the moon. If oxygen could be produced on the moon, this provides a dual benefit. Not only does it no longer need to be transported to the surface for breathing purposes; it can also be used as a fuel oxidizer to support transportation of crew and other materials more cheaply between the surface of the moon, and lower earth orbit (approximately $20,000/kg). To this end a stable, robust (lightly manned) system is required to produce oxygen from lunar resources. Herein, we investigate the feasibility of producing oxygen, which makes up almost half of the weight of the moon by direct electrolysis of the molten lunar regolith thus achieving the generation of usable oxygen gas while producing primarily iron and silicon at the cathode from the tightly bound oxides. The silicate mixture (with compositions and mechanical properties corresponding to that of lunar regolith) is melted at temperatures near 1600 C. With an inert anode and suitable cathode, direct electrolysis (no supporting electrolyte) of the molten silicate is carried out, resulting in production of molten metallic products at the cathode and oxygen gas at the anode. The effect of anode material, sweep rate, and electrolyte composition on the electrochemical behavior was investigated and implications for scale-up are considered. The activity and stability of the candidate anode materials as well as the effect of the electrolyte composition were determined. Additionally, ex-situ capture and analysis of the anode gas to calculate the current efficiency under different voltages, currents and melt chemistries was carried out.

Sirk, Aislinn H. C.↗

The Effect of Sulfuric Acid Anodization on the Electrochemical Properties of Aluminum Alloy AlSi 10 Mg Prepared by Selective Laser Melting

Aluminum alloy, AlSi 10 Mg, prepared by selective laser melt (SLM) fabrication was anodized in 9.8% sulfuric acid (Type II) at 15 V for a total of 23 min. Experiments were performed to study the potentiostatic anodization process and its effects on the oxide coating morphology, thickness, and electrochemical properties of the alloy. Prior to anodization, the alloy microstructure is composed of aluminum cells encapsulated in a silicon network. Anodizing the abraded and polished AlSi 10 Mg surface produced a porous oxide layer with a thickness of 5μm. The oxide coating weight was 698 ± 29 mg/ft 2 . The oxide coating forms in the aluminum cells that are isolated from one another by the silicon eutectic phase. In electrochemical tests, the anodic and cathodic potentiodynamic polarization currents were suppressed by factors of 15× and 215×, respectively, as compared to the unanodized controls. The data indicate the anodic oxide coating suppresses the cathodic more than the anodic reaction rate. Linear polarization resistance (R p ) values increased by 279× after anodization. The corrosion current density values (j corr ) decreased by 133× after anodization. Taken together, the electrochemical data indicate the anodic oxide coating (unsealed) increases the corrosion resistance of the SLM alloy by two orders of magnitude.

Electrochemistry↗

Lightweight, Ultra-High-Temperature, CMC-Lined Carbon/Carbon Structures

Carbon/carbon (C/C) is an established engineering material used extensively in aerospace. The beneficial properties of C/C include high strength, low density, and toughness. Its shortcoming is its limited usability at temperatures higher than the oxidation temperature of carbon . approximately 400 C. Ceramic matrix composites (CMCs) are used instead, but carry a weight penalty. Combining a thin laminate of CMC to a bulk structure of C/C retains all of the benefits of C/C with the high temperature oxidizing environment usability of CMCs. Ultramet demonstrated the feasibility of combining the light weight of C/C composites with the oxidation resistance of zirconium carbide (ZrC) and zirconium- silicon carbide (Zr-Si-C) CMCs in a unique system composed of a C/C primary structure with an integral CMC liner with temperature capability up to 4,200 F (.2,315 C). The system effectively bridged the gap in weight and performance between coated C/C and bulk CMCs. Fabrication was demonstrated through an innovative variant of Ultramet fs rapid, pressureless melt infiltration processing technology. The fully developed material system has strength that is comparable with that of C/C, lower density than Cf/SiC, and ultra-high-temperature oxidation stability. Application of the reinforced ceramic casing to a predominantly C/C structure creates a highly innovative material with the potential to achieve the long-sought goal of long-term, cyclic high-temperature use of C/C in an oxidizing environment. The C/C substructure provided most of the mechanical integrity, and the CMC strengths achieved appeared to be sufficient to allow the CMC to perform its primary function of protecting the C/C. Nozzle extension components were fabricated and successfully hot-fire tested. Test results showed good thermochemical and thermomechanical stability of the CMC, as well as excellent interfacial bonding between the CMC liner and the underlying C/C structure. In particular, hafnium-containing CMCs on C/C were shown to perform well at temperatures exceeding 3,500 F (.1,925 C). The melt-infiltrated CMC-lined C/C composites offered a lower density than Cf/SiC. The melt-infiltrated composites offer greater use temperature than Cf/SiC because of the more refractory ceramic matrices and the C/C substructure provides greater high-temperature strength. The progress made in this work will allow multiple high-temperature components used in oxidizing environments to take advantage of the low density and high strength of C/C combined with the high-temperature oxidation resistance of melt-infiltrated CMCs.

Wright, Matthew J.↗

Tetracene Functionalized Si(111) Achieves Enhanced Solar-to-Chemical Energy Conversion via Molecular Acceptor States

The properties of semiconductor|liquid interfaces play a critical role in determining the efficiency of solar-to-hydrogen (STH) conversion. Here, we investigate how molecular functionalization of Si(111) and Si(111)|TiO 2 surfaces impacts photoelectrochemical (PEC) hydrogen production efficiency. We find that functionalization of ∼3% of the atop sites of Si(111) with either 9-anthracene (Anth) or 5-tetracene (Tet), with the remaining sites passivated by methyl groups, provides substrates with high electronic quality and low surface oxide densities, as determined by X-ray photoelectron spectroscopy (XPS) measurements. Surface photovoltage (SPV) spectroscopy shows that surfaces modified with Anth or Tet exhibit an increased photovoltage, with Tet-functionalized surfaces yielding an additional 192 meV relative to methyl-terminated Si(111), indicating improved charge separation for Si-Tet. Further improvement in onset potential was achieved by replacing a nitrogen-containing TiO 2 atomic layer deposition (ALD) precursor (TDMAT) with a precursor lacking nitrogen (TTIP), which eliminates the parasitic defect band in the TiO 2 overlayer (p-Si(111)-Tet|TTIP-TiO 2 |Pt: V OC = +0.283 ± 0.041 V vs RHE). Density functional theory (DFT) analysis demonstrates that compared with Anth-modified Si(111), the Tet-modified surface exhibits more hybridized Si(111)-Tet states closer to the silicon band edges. Mercury contact current–voltage (I–V, dark) measurements quantified the relative interfacial density of states of Si-Tet, Si-Anth and Si-Me surfaces─revealing that the interfacial state density was highest for Si-Tet. This suggests that such hybridized interfaces serve to capture better photoexcited charge, which enables facile electron transfer to molecular acceptors in solution. Altogether, the data indicate that beneficial hybrid molecular LUMO surface states interacting with the Si conduction band edge results in improved hydrogen evolution (HER) performance for p-Si devices.

Group theory↗

Controlled Growth of Ta Oxide With Reactive Sputtering for Overlap Josephson Junction Application

Josephson junctions $\($JJs$\)$ are indispensable elements for superconducting quantum electronics. There is a growing need to develop processes for high quality JJs. Here we explore the growth of Ta oxide as a dielectric barrier for Metal-Oxide-Metal overlap JJ implementations. We study films of Ta oxides prepared with reactive magnetron sputtering. TaOx is grown on silicon and Ta films with varying RF power and oxygen concentrations. Tuning these parameters allows us to control the rate of deposition as well as composition of polycrystalline Ta oxides needed to meet our dielectric requirements for Josephson Junctions.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Wafer-Level Membrane-Transfer Process for Fabricating MEMS

A process for transferring an entire wafer-level micromachined silicon structure for mating with and bonding to another such structure has been devised. This process is intended especially for use in wafer-level integration of microelectromechanical systems (MEMS) that have been fabricated on dissimilar substrates. Unlike in some older membrane-transfer processes, there is no use of wax or epoxy during transfer. In this process, the substrate of a wafer-level structure to be transferred serves as a carrier, and is etched away once the transfer has been completed. Another important feature of this process is that two electrodes constitutes an electrostatic actuator array. An SOI wafer and a silicon wafer (see Figure 1) are used as the carrier and electrode wafers, respectively. After oxidation, both wafers are patterned and etched to define a corrugation profile and electrode array, respectively. The polysilicon layer is deposited on the SOI wafer. The carrier wafer is bonded to the electrode wafer by using evaporated indium bumps. The piston pressure of 4 kPa is applied at 156 C in a vacuum chamber to provide hermetic sealing. The substrate of the SOI wafer is etched in a 25 weight percent TMAH bath at 80 C. The exposed buried oxide is then removed by using 49 percent HF droplets after an oxygen plasma ashing. The SOI top silicon layer is etched away by using an SF6 plasma to define the corrugation profile, followed by the HF droplet etching of the remaining oxide. The SF6 plasma with a shadow mask selectively etches the polysilicon membrane, if the transferred membrane structure needs to be patterned. Electrostatic actuators with various electrode gaps have been fabricated by this transfer technique. The gap between the transferred membrane and electrode substrate is very uniform ( 0.1 m across a wafer diameter of 100 mm, provided by optimizing the bonding control). Figure 2 depicts the finished product.

Yang, Eui-Hyeok↗

Condensation of nonequilibrium phases of refractory silicates from the vapor

Silicon monoxide solid was evaporated in a bell jar containing reducing, neutral, or oxidizing atmospheres at pressures of a few torr. The vapor invariably condensed as smoke-sized particles of silicon sesquioxide, Si2O3. The condensation of a solid whose composition differs from that of the parent gas and is apparently the least stable of the three solid species illustrates the importance of specific nucleation effects in the condensation process. This result has significant implications for theories of formation of grains in space.

Day, K. L.↗

The study of surface acoustic wave charge transfer device

A surface acoustic wave-charge transfer device, consisting of an n-type silicon substrate, a thermally grown silicon dioxide layer, and a sputtered film of piezoelectric zinc oxide is proposed as a means of circumventing problems associated with charge-coupled device (CCD) applications in memory, signal processing, and imaging. The proposed device creates traveling longitudinal electric fields in the silicon and replaces the multiphase clocks in CCD's. The traveling electric fields create potential wells which carry along charges stored there. These charges may be injected into the wells by light or by using a p-n junction as in conventional CCD's.

Papanicolaou, N.↗

Fabrication of turbine components and properties of sintered silicon nitride

This paper presents a status report on the injection molding of sinterable silicon nitride at GTE Laboratories. The effort involves fabrication of single axial turbine blades and monolithic radial turbine rotors. The injection molding process is reviewed and the fabrication of the turbine components discussed. Oxidation resistance and strength results of current injection molded sintered silicon nitride as well as dimensional checks on sintered turbine blades demonstrate that this material is a viable candidate for high temperature structural applications.

Neil, J. T.↗