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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Silicon-based charge-coupled device (CCD) using thin layer on poly-crystaline silicon developed to enhance sensitivity to ultraviolet and soft x-ray photons. In developmental thin-gate CCD, width of first three layers reduced in size so that they only cover fraction of pixel, allowing photons to enter fourth poly layer unimpeded.
The statistical behavior of an idealized linear detector in the presence of threshold and saturation levels is examined. It is assumed that the noise is governed by the statistical fluctuations in the number of photons emitted by the source during an exposure. Since physical detectors cannot have infinite dynamic range, our model illustrates that all devices have non-linear regimes, particularly at high count rates. The primary effect is a decrease in the statistical variance about the mean signal due to a portion of the expected noise distribution being removed via clipping. Higher order statistical moments are also examined, in particular, skewness and kurtosis. In principle, the expected distortion in the detector noise characteristics can be calibrated using flatfield observations with count rates matched to the observations. For this purpose, some basic statistical methods that utilize Fourier analysis techniques are described.
An experiment on the Microelectronics and Photonics Test Bed (MPTB) was testing lield programmable gate arrays using spot shields to extend the life of some of the devices being tested. It was expected that the unshielded parts would fail from a total ionizing dose (TID) and yet the opposite occurred. The data show that the devices failing from the TID effects are those with the spot shields attached. This effort is to determine the mechanism by which the environment is interacting with the high-Z material to enhance the TID in these field programmable gate arrays.
The behavior of photons in a Photonic Crystals, PCs, is like that of electrons in a semiconductor in that, it prohibits light propagation over a band of frequencies, called Photonic Band Gap, PBG. Photons cannot exist in these band gaps like the forbidden bands of electrons. Thus, PCs lend themselves as potential candidates for devices based on the gap phenomenon. The popular research on PCs stem from their ability to confine light with minimal losses. Large scale 3-D PCs with a PBG in the visible or near infra red region will make optical transistors and sharp bent optical fibers. Efforts are directed to use PCs for information processing and it is not long before we can have optical integrated circuits in the place of electronic ones.
Fourier transform spectrometers have a venerable heritage as flight instruments. However, obtaining an accurate spectrum exacts a penalty in instrument mass and power requirements. Recent advances in a broad class of non-scanning Fourier transform spectrometer (FTS) devices, generally called spatial heterodyne spectrometers, offer distinct advantages as flight optimized systems. We are developing a miniaturized system that employs photonics lightwave circuit principles and functions as an FTS operating in the 7-14 micrometer spectral region. The inteferogram is constructed from an ensemble of Mach-Zehnder interferometers with path length differences calibrated to mimic scan mirror sample positions of a classic Michelson type FTS. One potential long-term application of this technology in low cost planetary missions is the concept of a self-contained sensor system. We are developing a systems architecture concept for wide area in situ and remote monitoring of characteristic properties that are of scientific interest. The system will be based on wavelength- and resolution-independent spectroscopic sensors for studying atmospheric and surface chemistry, physics, and mineralogy. The self-contained sensor network is based on our concept of an Addressable Photonics Cube (APC) which has real-time flexibility and broad science applications. It is envisaged that a spatially distributed autonomous sensor web concept that integrates multiple APCs will be reactive and dynamically driven. The network is designed to respond in an event- or model-driven manner or reconfigured as needed.
A process for n-type (electron-donor) delta doping has shown promise as a means of modifying back-illuminated image detectors made from n-doped high-purity silicon to enable them to detect high-energy photons (ultraviolet and x-rays) and low-energy charged particles (electrons and ions). This process is applicable to imaging detectors of several types, including charge-coupled devices, hybrid devices, and complementary metal oxide/semiconductor detector arrays. Delta doping is so named because its density-vs.-depth characteristic is reminiscent of the Dirac delta function (impulse function): the dopant is highly concentrated in a very thin layer. Preferably, the dopant is concentrated in one or at most two atomic layers in a crystal plane and, therefore, delta doping is also known as atomic-plane doping. The use of doping to enable detection of high-energy photons and low-energy particles was reported in several prior NASA Tech Briefs articles. As described in more detail in those articles, the main benefit afforded by delta doping of a back-illuminated silicon detector is to eliminate a "dead" layer at the back surface of the silicon wherein high-energy photons and low-energy particles are absorbed without detection. An additional benefit is that the delta-doped layer can serve as a back-side electrical contact. Delta doping of p-type silicon detectors is well established. The development of the present process addresses concerns specific to the delta doping of high-purity silicon detectors, which are typically n-type. The present process involves relatively low temperatures, is fully compatible with other processes used to fabricate the detectors, and does not entail interruption of those processes. Indeed, this process can be the last stage in the fabrication of an imaging detector that has, in all other respects, already been fully processed, including metallized. This process includes molecular-beam epitaxy (MBE) for deposition of three layers, including metallization. The success of the process depends on accurate temperature control, surface treatment, growth of high-quality crystalline silicon, and precise control of thicknesses of layers. MBE affords the necessary nanometer- scale control of the placement of atoms for delta doping. More specifically, the process consists of MBE deposition of a thin silicon buffer layer, the n-type delta doping layer, and a thin silicon cap layer. The n dopant selected for initial experiments was antimony, but other n dopants as (phosphorus or arsenic) could be used. All n-type dopants in silicon tend to surface-segregate during growth, leading to a broadened dopant-concentration- versus-depth profile. In order to keep the profile as narrow as possible, the substrate temperature is held below 300 C during deposition of the silicon cap layer onto the antimony delta layer. The deposition of silicon includes a silicon- surface-preparation step, involving H-termination, that enables the growth of high-quality crystalline silicon at the relatively low temperature with close to full electrical activation of donors in the surface layer.
Abstract Silicon photonic index sensors have received significant attention for label-free bio and gas-sensing applications, offering cost-effective and scalable solutions. Here, we introduce an ultra-compact silicon photonic refractive index sensor that leverages zero-crosstalk singularity responses enabled by subwavelength gratings. The subwavelength gratings are precisely engineered to achieve an anisotropic perturbation-led zero-crosstalk, resulting in a single transmission dip singularity in the spectrum that is independent of device length. The sensor is optimized for the transverse magnetic mode operation, where the subwavelength gratings are arranged perpendicular to the propagation direction to support a leaky-like mode and maximize the evanescent field interaction with the analyte space. Experimental results demonstrate a high wavelength sensitivity of − 410 nm/RIU and an intensity sensitivity of 395 dB/RIU, with a compact device footprint of approximately 82.8 μm 2 . Distinct from other resonant and interferometric sensors, our approach provides an FSR-free single-dip spectral response on a small device footprint, overcoming common challenges faced by traditional sensors, such as signal/phase ambiguity, sensitivity fading, limited detection range, and the necessity for large device footprints. This makes our sensor ideal for simplified intensity interrogation. The proposed sensor holds promise for a range of on-chip refractive index sensing applications, from gas to biochemical detection, representing a significant step towards efficient and miniaturized photonic sensing solutions. Graphical Abstract
Reciprocal and nonreciprocal effects in dielectric and magnetic materials provide crucial information about the microscopic properties of electrons. However, experimentally distinguishing the two has proven to be challenging, especially when the associated effects are extremely small. To this end, we propose a contactless detection using a cross-cavity device where a material of interest is placed at its center. We show that the optical properties of the material, such as Kerr and Faraday rotation, or birefringence, manifest in the coupling between the cavity's electromagnetic modes and in the shift of their resonant frequencies. By calculating the dynamics of a geometrical photonic state, we formulate a measurement protocol based on the quantum metric and quantum process tomography that isolates the individual components of the material's complex refractive index and minimizes the quantum mechanical Cramér-Rao bound on the variance of the associated parameter estimation. Our approach is expected to be applicable across a broad spectrum of experimental platforms including Fock states in optical cavities, or coherent states in microwave and THz resonators. Published by the American Physical Society 2025
3D printing is an emerging technology for the fabrication of energy storage devices, offering advantages over traditional manufacturing methods. However, optimization and design of such devices requires an understanding of the meso-structure formation during the 3D printing process. This study utilizes operando coherent X-ray scattering, X-ray Photon Correlation Spectroscopy (XPCS), to study the spatiotemporally-resolved far-from-equilibrium dynamics during direct ink writing 3D printing. Here, Lithium Titanate (LTO) based ink is prepared and rheologically tested for its shear-thinning properties. Two-time intensity-intensity functions are calculated to be used in subsequent quantitative analysis, which allows for an overall characterization of the dynamics, description of an initial fast decorrelation and identification of sudden rearrangements of subdomains of the sample. The results show the dynamics to be anisotropic, spatiotemporally heterogenous and marked by distinct rearrangement events, all of which impact the electrochemical performance of energy storage devices. The studied 3D printing ink is used to fabricate electrodes which are then electrochemically tested, showing good performance in cycling and retaining structural integrity. This work furthers the understanding of the far-from-equilibrium material dynamics during 3D printing, giving quantitative characterization of this process, and highlights aspects of structure formation relevant to the electrochemical performance of the resultant energy storage device.
Via a combined theoretical and experimental study, we have investigated the synthesis and performance characteristics of InGaN/Si double-junction photoelectrochemical (PEC) water splitting devices, which promise a theoretical solar-to-hydrogen conversion efficiency ~30% under AM 1.5G one-sun illumination. The double-junction photocathodes consist of a p + -InGaN top light absorber and a Si bottom p-n junction, which are connected through a nanowire tunnel junction. The effect of indium composition of the top light absorber as well as the impact of p-type Mg dopant incorporation on the PEC performance was studied. Experimentally, the sample with 32% indium composition showed a maximum photocurrent density of ~9 mA/cm 2 at 0.4 mV vs reverse hydrogen electrode (RHE) with applied bias photon-to-current efficiency (ABPE) of ~9.5%. An optimum p-type doping level ~1 × 10 17 cm -3 was also identified, which results in the best device performance as a result of optimum surface band bending as well as vertical charge carrier (hole) transport. These results also show a good agreement with our theoretical analysis. This work provides significant insights in advancing the design and development of high efficiency PEC devices for artificial photosynthesis using industry ready materials, e.g., Si and GaN, to achieve large-scale, low-cost onsite hydrogen fuel production.
Solar sails offer an opportunity for a CubeSatscale, propellant-free spacecraft technology that enables long-term and long-distance missions not possible with traditional methods. Solar sails operate using the transfer of linear momentum from photons of sunlight reflected from the surface of the sail. To propel the spacecraft, no mechanically moving parts, thrusters, or propellant are needed. However, attitude control, or orientation, is still performed using traditional methods involving reaction wheels and propellant ejection, which severely limit mission lifetime. For example, the current state of the art solutions employed by upcoming missions couple solar sails with a state of the art propellant ejection gas system. Here, the use of the gas thruster has limited the lifetime of the mission. To solve the limited mission lifetime problem, the Propellantless Attitude Control of Solar Sail Technology Utilizing Reflective Control Devices project team is working on propellantless attitude control using thin layers of material, an optical film, electrically switchable from transparent to reflective. The technology is based on a polymer-dispersed liquid crystal (PDLC), which allows this switch upon application of a voltage. This technology removes the need for propellant, which reduces weight and cost while improving performance and lifetime.
The evaluation of certain performance parameters of the Fairchild CCD 201 and the proposed method of operation of an electron bombarded charge coupled device are described. Work in progress on the evaluation of the parameters relevant to remote, low noise operation is reported. These tests have been conducted using light input. The video data from the CCD are amplified, digitized, stored in a minicomputer memory, and then recorded on magnetic tape for analyzing. The device will be used in an array of sensors in the aperture plane of a telescope to discriminate between photoelectron events, and in the focal plane operating at single photoelectron sensitivity at a minimum of blooming and lag.
It is shown that due to high speed and large volume of production, anisotropic wet etching of Si is a unique method of manufacturing high quality micropyramidal arrays for silicon photonics. Four types of arrays were fabricated: (i) square pyramids with the 54.7 slope of the sidewall surface, (ii) microcones with the 45 slope of sidewall surface, (iii) inverted square pyramids with 54.7 slope, and (iv) inverted triangular pyramids with different angles of the sidewalls. It is shown that the first type of arrays has a capability to produce tightly focused mid-wave infrared (MWIR) beams at the tips of the pyramids. Other arrays can be also used as light concentrators and various multifunctional microphotonic components.
The National Aeronautics and Space Administration (NASA) Glenn Research Center (GRC) developed and previously characterized a photon-counting optical ground receiver system. The receiver is compliant with the Consultative Committee for Space Data Systems (CCSDS) Optical Communications Coding and Synchronization High Photon Efficiency (HPE) Standard. The standard will be used on the Optical Artemis-2 Orion (O2O) communications demonstration and the Deep Space Optical Communication (DSOC) project aboard the Psyche spacecraft. The receiver system consists of a fiber interconnect, up to sixteen superconducting nanowire single-photon detectors (SNSPDs), and a field programmable gate array (FPGA) based receive modem. Previously, the receiver system architecture was described and test results without emulated link effects were presented. SNSPD device properties, which impact detection jitter and time delay, can limit the receiver dynamic range, especially when operating with varying flux rates (>10 dB) between detectors. Codeword error-rate curves with and without simulated clock drifts attributed to Doppler shift and space transmitter clock differences are presented. Results with ±66 ppm clock differences show minimal performance impact (<0.2 dB). Test results show that the receiver dynamic range (>28 dB) is limited by changing SNSPD detection delays at high photon flux rates.
The National Aeronautics and Space Administration (NASA) Glenn Research Center (GRC) developed and previously characterized a photon-counting optical ground receiver system. The receiver is compliant with the Consultative Committee for Space Data Systems (CCSDS) Optical Communications Coding and Synchronization High Photon Efficiency (HPE) Standard. The standard will be used on the Optical Artemis-2 Orion (O2O) communications demonstration and the Deep Space Optical Communication (DSOC) project aboard the Psyche spacecraft. The receiver system consists of a fiber interconnect, up to sixteen superconducting nanowire single-photon detectors (SNSPDs), and a field programmable gate array (FPGA) based receive modem. Previously, the receiver system architecture was described and test results without emulated link effects were presented. SNSPD device properties, which impact detection jitter and time delay, can limit the receiver dynamic range, especially when operating with varying flux rates (>10 dB) between detectors. Codeword error-rate curves with and without simulated clock drifts attributed to Doppler shift and space transmitter clock differences are presented. Results with ±66 ppm clock differences show minimal performance impact (<0.2 dB). Test results show that the receiver dynamic range (>28 dB) is limited by changing SNSPD detection delays at high photon flux rates.
Recent advances in two-dimensional (2D) van der Waals (vdW) metal thiophosphates have attracted considerable attention due to their promising ionic conductivity, optical characteristics, and tunable physical properties. Within this material family, LiInP 2 S 6 has emerged as an intriguing candidate, not only because of its sensitivity to air and moisture but also due to its suitable band gap within the UV−vis range, enabling potential optoelectronic and photocatalytic applications. In this study, through comprehensive first-principles investigations, we unveil two previously unreported polymorphs of LiInP 2 S 6 in the monoclinic C2/c and trigonal P3̅1c (in-gap) space groups, in addition to examining the experimentally synthesized P3̅1c (in-layer) phase. Our studies identify the C2/c structure as the ground state, lying 9 meV per unit cell lower in energy than the experimentally realized trigonal P3̅1c (in-layer) phase. Further, we systematically examine the elastic, mechanical, thermodynamical, dynamical, electronic, and optical properties of all three polymorphs, confirming their mechanical, thermal, and dynamical stability. Notably, the P3̅1c (in-gap) phase exhibits enhanced stiffness, while the calculated indirect band gaps and strong photon absorption in the UV−vis range (∼3 eV) highlight the potential of the studied LiInP 2 S 6 phases for iontronic devices and optoelectronic applications.
Nanowires bring new possibilities to the field of hot-carrier photovoltaics by providing flexibility in combining materials for band engineering and using nanophotonic effects to control light absorption. Previously, an open-circuit voltage beyond the Shockley–Queisser limit was demonstrated in hot-carrier devices based on InAs–InP–InAs nanowire heterostructures. However, in these first experiments, the location of light absorption, and therefore the precise mechanism of hot-carrier extraction, was uncontrolled. In this study, we combine plasmonic nanoantennas with InAs–InP–InAs nanowire devices to enhance light absorption within a subwavelength region near an InP energy barrier that serves as an energy filter. From photon-energy- and irradiance-dependent photocurrent and photovoltage measurements, we find that photocurrent generation is dominated by internal photoemission of nonthermalized hot electrons when the photoexcited electron energy is above the barrier and by photothermionic emission when the energy is below the barrier. We estimate that an internal quantum efficiency up to 0.5–1.2% is achieved. Insights from this study provide guidelines to improve internal quantum efficiencies based on nanowire heterostructures.
Deterministic coupling between photonic nodes in a quantum network is an essential step toward implementing various quantum technologies. The omnidirectionality of free-standing emitters, however, makes this coupling highly inefficient, in particular if the distant nodes are coupled via low numerical aperture (NA) channels such as optical fibers. This limitation requires placing quantum emitters in nanoantennas that can direct the photons into the channels with very high efficiency. Moreover, to be able to scale such technologies to a large number of channels, the placing of the emitters should be deterministic. In this work, we present a method for directly locating single free-standing quantum emitters with high spatial accuracy at the center of highly directional bullseye metal–dielectric nanoantennas. We further employ non-blinking, high quantum yield colloidal quantum dots for on-demand single-photon emission that is uncompromised by instabilities or non-radiative exciton recombination processes. Taken together, this approach results in a record-high collection efficiency of 85% of the single photons into a low NA of 0.5, setting the stage for efficient coupling between on-chip, room temperature nanoantenna-emitter devices and a fiber or a remote free-space node without the need for additional optics.