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At least 811 records · Page 45
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Thermally stable perpendicular magnetic anisotropy features of [Co/Pd]{sub m} multilayer matrix integrated with [CoO/Pd]{sub n} bottom layer

We evaluated the perpendicular magnetic anisotropy (PMA) features of a hybrid [CoO/Pd]{sub 2}/[Co/Pd]{sub 7} multilayer (ML) matrix under annealing in which the [CoO/Pd]{sub 2} bottom layer was inserted. Annealing allowed for the diffusion of oxygen atoms existing in the inserted [CoO/Pd]{sub 2} layer, leading to an atomic structural reconfiguration event. The hybrid matrix was crucial to result in a higher effective anisotropy energy (3.40 Merg/cc) than an ordinary [Co/Pd]{sub 7} ML matrix (1.25 Merg/cc) under annealing at 450 °C. X-ray photoelectron spectroscopy confirmed the presence of Co-O bonding states and annealing dependent oxygen atom diffusion. The possible nature of the enhanced PMA features is discussed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Spectroscopic ellipsometry of homoepitaxial diamond multilayers and delta-doped structures

The optimization of diamond-based unipolar electronic devices such as pseudo-vertical Schottky diodes or delta-doped field effect transistors relies in part on the sequential growth of nominally undoped (p{sup –}) and heavily boron doped (p{sup ++}) layers with well-controlled thicknesses and steep interfaces. Optical ellipsometry offers a swift and contactless method to characterize the thickness, roughness, and electronic properties of semiconducting and metallic diamond layers. We report ellipsometric studies carried out on delta-doped structures and other epitaxial multilayers with various boron concentrations and thicknesses (down to the nanometer range). The results are compared with Secondary Ion Mass Spectroscopy and transport measurements.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Tuning extreme ultraviolet emission for optimum coupling with multilayer mirrors for future lithography through control of ionic charge states

We report on the identification of the optimum plasma conditions for a laser-produced plasma source for efficient coupling with multilayer mirrors at 6.x nm for beyond extreme ultraviolet lithography. A small shift to lower energies of the peak emission for Nd:YAG laser-produced gadolinium plasmas was observed with increasing laser power density. Charge-defined emission spectra were observed in electron beam ion trap (EBIT) studies and the charge states responsible identified by use of the flexible atomic code (FAC). The EBIT spectra displayed a larger systematic shift of the peak wavelength of intense emission at 6.x nm to longer wavelengths with increasing ionic charge. This combination of spectra enabled the key ion stage to be confirmed as Gd{sup 18+}, over a range of laser power densities, with contributions from Gd{sup 17+} and Gd{sup 19+} responsible for the slight shift to longer wavelengths in the laser-plasma spectra. The FAC calculation also identified the origin of observed out-of-band emission and the charge states responsible.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2014

Elastic strains at interfaces in InAs/AlSb multilayer structures for quantum cascade lasers

InAs/AlSb multilayers similar to those used in quantum cascade lasers have been grown by molecular beam epitaxy on (001) InAs substrates. Elastic strain is investigated by high resolution transmission electron microscopy. Thin interfacial regions with lattice distortions significantly different from the strain of the AlSb layers themselves are revealed from the geometrical phase analysis. Strain profiles are qualitatively compared to the chemical contrast of high angle annular dark field images obtained by scanning transmission electron microscopy. The strain and chemical profiles are correlated with the growth sequences used to form the interfaces. Tensile strained AlAs-like interfaces tend to form predominantly due to the high thermal stability of AlAs. Strongly asymmetric interfaces, AlAs-rich and (Al, In)Sb, respectively, can also be achieved by using appropriate growth sequences.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Seed influence on the ferromagnetic resonance response of Co/Ni multilayers

The effect of Pd and Ru seed layers on the magnetic properties of [Co/Ni]{sub N} multilayers with varying number of bilayer repeats N is investigated using vector network analyzer ferromagnetic resonance. The effective anisotropy field H{sub Keff} is found to increase with N for Ru seed, but decreases for Pd until N = 15. As N is increased beyond 15, H{sub Keff} decreases for both seeds. In contrast, the damping parameter α decreases with N regardless of the seed, showing a 1/N dependence. Taking spin pumping into account, the intrinsic damping α{sub 0} for both Pd and Ru seeds reduce to α{sub 0} ≈ 0.01. These results demonstrate that there can be a strong influence of the seed/Co interface on anisotropy, especially for sufficiently low N, but not necessarily on α{sub 0}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Sign change of exchange bias in [Pt/Co]{sub 3}/IrMn multilayer

The properties of exchange bias in a multilayer of [Pt(1.0 nm)/Co(1.0 nm)]{sub 2}/Pt(t{sub Pt} nm)/Co(1.0 nm)/ IrMn(12.0 nm) were investigated with a variation of Pt layer thickness, t{sub Pt}. For t{sub Pt} ≤ 1.6 nm, it was typically observed that Co layers were ferromagnetically coupled while IrMn layer exhibited negative exchange bias. With increasing Pt thickness, antiferromagnetic (AF) interlayer coupling strength increased and caused AF spin configuration between the Co layers. With further increasing of Pt thickness (t{sub Pt} = 2.5 nm), the exchange bias between Co and IrMn layers was changed from negative to positive. Therefore, a large enhancement of AF interlayer coupling induced the sign change of exchange bias from negative to positive and resulted in a drastic change of switching behavior in a magnetization reversal. Both extraordinary Hall-effect and magnetoresistance were measured to verify the exchange bias direction and spin configurations upon magnetization reversal.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

High precision laser induced etching of multilayered MoS{sub 2}

We demonstrate a method for reducing the thickness of multilayered MoS{sub 2} to few and single layers by irradiation with a 532 nm wavelength laser spot. The morphology and optical properites of the etched MoS{sub 2} were were measured by atomic force microscopy (AFM) and Raman spectroscopy before and after laser etching. Our laser etching method is a simple and highly effective tool for the fabrication of single, and few layered MoS{sub 2} for atomic scale optical and electronic device applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Magnetic and structural properties of MnBi multilayered thin films

Magnetic and structural properties of MnBi films with thicknesses up to 50 nm were investigated. Thin films of the MnBi LTP (Low Temperature Phase) were fabricated onto silica-glass substrates by sputter-deposition of Bi/Mn multilayer, followed by a subsequent annealing at about 550 °C for 30 min. Coercivity of such thin films is higher than 15 kOe, even though the film thickness is about 10 nm. These thin films show the preferential growth of c-axis of the LTP along the film normal. Moreover, high resolution transmission electron microscopy indicates that the LTP regions of 30–50 nm in size are physically isolated by Bi. The magnetization reversal mechanism of such a LTP region is mainly governed by a coherent rotation mode based on the δM curve measurement.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

All-thin-film multilayered multiferroic structures with a slot-line for spin-electromagnetic wave devices

Spin-electromagnetic waves propagating in thin-film multilayered multiferroic structures containing a slot transmission line have been investigated both experimentally and theoretically. The thin-film structure was composed of a ferrite film, a ferroelectric film, and a slot-line. It was shown that the spectrum of the spin-electromagnetic wave was formed as a result of hybridization of the spin wave in the ferrite film with the electromagnetic wave in the slot-line and was electrically and magnetically tunable. For the experimental investigations, a microwave phase shifter based on the multiferroic structure has been fabricated. Performance characteristics are presented.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Model independent x-ray standing wave analysis of periodic multilayer structures

We present a model independent approach for the analysis of X-ray fluorescence yield modulated by an X-ray standing wave (XSW), that allow a fast reconstruction of the atomic distribution function inside a sample without fitting procedure. The approach is based on the direct regularized solution of the system of linear equations that characterizes the fluorescence yield. The suggested technique was optimized for, but not limited to, the analysis of periodic layered structures where the XSW is formed under Bragg conditions. The developed approach was applied to the reconstruction of the atomic distribution function for LaN/BN multilayers with 50 periods of 43 Å thick layers. The object is especially difficult to analyze with traditional methods, as the estimated thickness of the interface region between the constituent materials is comparable to the individual layer thicknesses. However, using the suggested technique, it was possible to reconstruct width of the La atomic distribution showing that the La atoms stay localized within the LaN layers and interfaces and do not diffuse into the BN layer. The analysis of the reconstructed profiles showed that the positions of the center of the atomic distribution function can be estimated with an accuracy of 1 Å.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Note: Large area deposition of Rh single and Rh/W/Cu multilayer thin films on stainless steel substrate by pulsed laser deposition technique

Mirror like thin films of single layer Rh and multilayer Rh/W/Cu are deposited on highly polished 50 mm diameter stainless steel substrate by Pulsed Laser Deposition (PLD) technique for first mirror application in fusion reactors. For this, the conventional PLD technique has been modified by incorporating substrate rastering stage for large area deposition via PLD. Process optimization to achieve uniformity of deposition as estimated from fringe visibility and thickness is also discussed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2014

Temperature dependencies of hydrogen-induced blistering of thin film multilayers

We report on the influence of sample temperature on the development of hydrogen-induced blisters in Mo/Si thin-film multilayers. In general, the areal number density of blisters decreases with increasing exposure temperature, whereas individual blister size increases with exposure temperatures up to ∼200 °C but decreases thereafter. Comparison as a function of sample temperature is made between exposures to a flux containing both hydrogen ions and neutrals and one containing only neutrals. In the case of the neutral-only flux, blistering is observed for exposure temperatures ≥90 °C. The inclusion of ions promotes blister formation at <90 °C, while retarding their growth at higher temperatures. In general, ion-induced effects become less evident with increasing exposure temperature. At 200 °C, the main effect discernable is reduced blister size as compared with the equivalent neutral-only exposure. The temperature during exposure is a much stronger determinant of the blistering outcome than either pre- or post-annealing of the sample. The trends observed for neutral-only exposures are attributed to competing effects of defect density thermal equilibration and H-atom induced modification of the Si layers. Energetic ions modify the blistering via (temperature dependent) enhancement of H-mobility and re-crystallization of amorphous Si.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Role of multilayer-like interference effects on the transient optical response of Si{sub 3}N{sub 4} films pumped with free-electron laser pulses

X-ray/optical cross-correlation methods are attracting increasing interest for exploring transient states of matter using ultrashort free-electron laser (FEL) pulses. Our paper shows that in such studies the difference in the penetration depth of the FEL-pump and the infrared (IR) probe pulses become important, in particular, when exploring the changes in the optical properties of solid targets. We discuss the role of interference effects, using a phenomenological model with excited and unperturbed slabs. The reliability of this model was experimentally verified by measuring the transient optical response of free-standing and silicon (Si) supported silicon nitride (Si{sub 3}N{sub 4}) films, simultaneously in reflection and transmission, using s- and p-polarized IR light. The changes in the Si{sub 3}N{sub 4} optical refractive index, induced by the FEL pulses, have fully been described in the frame of the proposed model. The experimental results confirm that the differences, observed in the FEL-induced transient reflectance and transmittance of the Si{sub 3}N{sub 4} targets with different thicknesses, arise from multilayer-like interferometric phenomena.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Determining the crystalline degree of silicon nanoclusters/SiO{sub 2} multilayers by Raman scattering

We use Raman scattering to investigate the size distribution, built-in strains and the crystalline degree of Si-nanoclusters (Si-nc) in high-quality Si-rich oxynitride/SiO{sub 2} multilayered samples obtained by plasma enhanced chemical vapor deposition and subsequent annealing at 1150 °C. An initial structural characterization of the samples was performed by means of energy-filtered transmission electron microscopy (EFTEM) and X-ray diffraction (XRD) to obtain information about the cluster size and the presence of significant amounts of crystalline phase. The contributions to the Raman spectra from crystalline and amorphous Si were analyzed by using a phonon confinement model that includes the Si-nc size distribution, the influence of the matrix compressive stress on the clusters, and the presence of amorphous Si domains. Our lineshape analysis confirms the existence of silicon precipitates in crystalline state, in good agreement with XRD results, and provides also information about the presence of a large compressive stress over the Si-nc induced by the SiO{sub 2} matrix. By using the Raman spectra from low temperature annealed samples (i.e., before the crystallization of the Si-nc), the relative scattering cross-section between crystalline and amorphous Si was evaluated as a function of the crystalline Si size. Taking into account this parameter and the integrated intensities for each phase as extracted from the Raman spectra, we were able to evaluate the degree of crystallization of the precipitated Si-nc. Our data suggest that all samples exhibit high crystalline fractions, with values up to 89% for the biggest Si-nc. The Raman study, supported by the EFTEM characterization, indicates that this system undergoes a practically abrupt phase separation, in which the precipitated Si-nanoclusters are formed by a crystalline inner part surrounded by a thin amorphous shell of approximately 1–2 atomic layers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Separation of interlayer resistance in multilayer MoS{sub 2} field-effect transistors

We extracted the interlayer resistance between two layers in multilayer molybdenum disulfide (MoS{sub 2}) field-effect transistors by confirming that contact resistances (R{sub contact}) measured using the four-probe measurements were similar, within ∼30%, to source/drain series resistances (R{sub sd}) measured using the two-probe measurements. R{sub contact} values obtained from gated four-probe measurements exhibited gate voltage dependency. In the two-probe measurements, the Y-function method was applied to obtain the R{sub sd} values. By comparing those two R{sub contact} (∼9.5 kΩ) and R{sub sd} (∼12.3 kΩ) values in strong accumulation regime, we found the rationality that those two values had nearly the same properties, i.e., the Schottky barrier resistances and interlayer resistances. The R{sub sd} values of devices with two-probe source/drain electrodes exhibited thickness dependency due to interlayer resistance changes. The interlayer resistance between two layers was also obtained as ∼2.0 Ω mm.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Carrier behavior in special multilayer device composed of different transition metal oxide-based intermediate connectors

The impact of illumination on the connection part of the tandem organic light-emitting diodes was studied by using a special organic multilayer sample consisted of two organic active layers coupled with different transition metal oxide (TMO)-based intermediate connectors (ICs). Through measuring the current density-voltage characteristic, interfacial electronic structures, and capacitance-voltage characteristic, we observe an unsymmetrical phenomenon in current density-voltage and capacitance-voltage curves of Mg:Alq{sub 3}/MoO{sub 3} and MoO{sub 3} composed devices, which was induced by the charge spouting zone near the ICs region and the recombination state in the MoO{sub 3} layer. Moreover, Mg:Alq{sub 3}/MoO{sub 3} composed device displays a photovoltaic effect and the V{sub oc} shifts to forward bias under illumination. Our results demonstrate that the TMO-based IC structure coupled with photovoltaic effect can be a good approach for the study of photodetector, light sensor, and so on.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Off-axis electron holography of ferromagnetic multilayer nanowires

We have used electron holography to investigate the local magnetic behavior of isolated ferromagnetic nanowires (NWs) in their remanent states. The NWs consisted of periodic magnetic layers of soft, high-saturation magnetization CoFeB alloys, and non-magnetic layers of Cu. All NWs were fabricated by pulsed-potential electrodeposition in nanoporous alumina membranes. The NW composition and layer thicknesses were measured using scanning transmission electron microscopy and energy dispersive spectroscopy. The magnetization of individual NWs depended upon the thicknesses of the layers and the direction of an external magnetic field, which had been applied in situ. When the CoFeB was thicker than the diameter (50 nm), magnetization was axial for all external field directions, while thinner layers could be randomized via a perpendicular field. In some cases, magnetization inside the wire was detected at an angle with respect to the axis of the wires. In thinner Cu/CoFeB (<10 nm each) multilayer, magnetic field vortices were detected, associated with opposing magnetization in neighbouring layers. The measured crystallinity, compositions, and layer thicknesses of individual NWs were found to be significantly different from those predicted from calibration growths based on uniform composition NWs. In particular, a significant fraction of Cu (up to 50 at. %) was present in the CoFeB layers such that the measured magnetic induction was lower than expected. These results will be used to better understand previously measured effective anisotropy fields of similar NW arrays.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Iron silicide formation at different layers of (Fe/Si){sub 3} multilayered structures determined by conversion electron Mössbauer spectroscopy

The morphology and the quantitative composition of the Fe-Si interface layer forming at each Fe layer of a (Fe/Si){sub 3} multilayer have been determined by means of conversion electron Mössbauer spectroscopy (CEMS) and high-resolution transmission electron microscopy (HRTEM). For the CEMS measurements, each layer was selected by depositing the Mössbauer active {sup 57}Fe isotope with 95% enrichment. Samples with Fe layers of nominal thickness d{sub Fe} = 2.6 nm and Si spacers of d{sub Si} = 1.5 nm were prepared by thermal evaporation onto a GaAs(001) substrate with an intermediate Ag(001) buffer layer. HRTEM images showed that Si layers grow amorphous and the epitaxial growth of the Fe is good only for the first deposited layer. The CEMS spectra show that at all Fe/Si and Si/Fe interfaces a paramagnetic c-Fe{sub 1−x}Si phase is formed, which contains 16% of the nominal Fe deposited in the Fe layer. The bottom Fe layer, which is in contact with the Ag buffer, also contains α-Fe and an Fe{sub 1−x}Si{sub x} alloy that cannot be attributed to a single phase. In contrast, the other two layers only comprise an Fe{sub 1−x}Si{sub x} alloy with a Si concentration of ≃0.15, but no α-Fe.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗