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Proton conducting membrane using a solid acid
A solid acid material is used as a proton conducting membrane in an electrochemical device. The solid acid material can be one of a plurality of different kinds of materials. A binder can be added, and that binder can be either a nonconducting or a conducting binder. Nonconducting binders can be, for example, a polymer or a glass. A conducting binder enables the device to be both proton conducting and electron conducting.
Fundamentals and emerging optical applications of hexagonal boron nitride: a tutorial
Hexagonal boron nitride (hBN), also known as white graphite, is a transparent layered crystal with a wide bandgap. Its crystal structure resembles graphite, featuring layers composed of honeycomb lattices held together through van der Waals forces. The layered crystal structure of hBN facilitates exfoliation into thinner flakes and makes it highly anisotropic in in-plane and out-of-plane directions. Unlike graphite, hBN is both insulating and transparent, making it an ideal material for isolating devices from the environment and acting as a waveguide. As a result, hBN has found extensive applications in optical devices, electronic devices, and quantum photonic devices. This comprehensive tutorial aims to provide readers with a thorough understanding of hBN, covering its synthesis, lattice and spectroscopic characterization, and various applications in optoelectronic and quantum photonic devices. This tutorial is designed for both readers without prior experience in hBN and those with expertise in specific fields seeking to understand its relevance and connections to others.
Superconducting Al-trilayer tunnel junctions for use as X-ray detectors
Photolithographic techniques have been developed to fabricate high-quality Al-Al oxide-Al superconducting tunnel junctions for use in X-ray detectors. These devices are designed to incorporate about 1-micron-thick superconducting X-ray absorbers for the detection of less than 10-keV single photons. In an effort to increase energy resolution, superconductor bandgap engineering with lateral and vertical trapping has been used to shorten quasi-particle tunneling times and diffusion lengths and to prevent quasi-particle diffusion away from the tunnel junction. Methods that have been developed for overcoming materials imcompatibility and device degradation upon thermal cycling are reported. The authors also report on the use of a nonrectangular tunnel junction geometry which reduces the magnetic field needed to suppress the Josephson current for stable biasing. Work in progress to measure the energy resolution of these X-ray detectors at 0.35 K is also discussed.
A&L Annual Report: Kapton Strength
Exploding Foil Initiator (EFI) systems function by launching a polymer flyer (often referred to as a slapper) at a high explosive (HE) pellet, which is intended to shock-initiate the HE. Flyer characteristics (e.g., shape, planarity, etc.) are extremely important in this respect, governing their ability to initiate the HE. Polymer models currently used in these systems are largely unvalidated, potentially compromising the integrity of magneto-hydrodynamic (MHD) predictions of EFI function. An improved EFI MHD modelling capability is expected to: (1) expedite optimization of EFI-based initiation system design, (2) enable consideration of EFI-related aging and corresponding lifetime predictions, and (3) potentially minimize the number of costly experiments required to certify EFI designs. To address this knowledge gap, several years ago we began a computational project to develop a higher-fidelity model for Kapton, a Polyimide copolymer most commonly employed as the flyer material in EFI devices.
Electrochemical Activation of Ni–Fe Oxides for the Oxygen Evolution Reaction in Alkaline Media
The oxygen evolution reaction (OER) is essential to many key electrochemical devices, including H 2 O electrolyzers, CO 2 electrolyzers, and metal−air batteries. NiFe oxides have been historically identified as active for the OER, though they have been less studied in their more commercially relevant bulk oxide forms, such as NiFe 2 O 4 . Past works have demonstrated that the initial starting phase of Ni(Fe) precatalysts can influence their activation to the Ni(Fe)OOH active phase, including the rate and degree of conversion, pointing to the necessity of understanding activation protocols and in situ characteristics of catalyst materials at the device level. In this work, we investigate the characteristics of commercially relevant NiFe bulk oxides (NiFe 2 O 4 and a physical mixture of NiO and γ-Fe 2 O 3 ) during multiple activation procedures. Our results demonstrate that significant performance enhancement is observed for these bulk oxides regardless of the Fe incorporation in the initial form (i.e., atomically or macroscopically integrated), leading to significant performance enhancement (up to 30×) over time on stream. We hypothesize that this activation is due to the formation of NiFeOOH active sites on the surface, supported by in situ cyclic voltammetry and Raman spectroscopy results. We further show that not only the starting material but also the method of activation influences the number of Ni(Fe)OOH active sites formed and suggest that these sites can be quantified from the Ni 2+ to Ni 3+ redox transition using cyclic voltammetry. Broadly, this work demonstrates the necessity of in situ characterization of catalyst materials for cell-level design and testing.
An Impedance Humidity Sensor Based on CVD Grown WSe 2 2D Films
2D materials-based planar devices have been sought after for gas and humidity sensor applications owing to their high sensitivity due to their ultrathin nature and increased surface area. Herein, 2D WSe 2 films-based planner devices were fabricated to evaluate their performance for potential application in humidity sensors. The structure and morphology of the WSe 2 sensing films were studied by Raman spectroscopy, photoluminescence, optical microscopy, and scanning electron microscopy (SEM) techniques. The relative humidity-dependent sensing performances of the 2D WSe 2 films were evaluated using current–voltage (I–V), relative impedance, and complex total impedance (electrochemical impedance spectroscopy, EIS) techniques. This sensor showed a very stable and repeatable performance investigated over the period of 18 months. The response and recovery times of the WSe 2 -based impedance sensors were found to be 40 and 30 s, respectively. The WSe 2 sensor exhibits a 2 ± 1% minimum hysteresis at a lower humidity level (50% RH) and around 8 ± 2% maximum hysteresis at relative humidity level (70% RH). This value of hysteresis is in the acceptable range during the initial investigation of any material to explore its potential for application in humidity sensors. The density functional theory (DFT) analysis was performed with the interaction from water molecules of the WSe 2 sample for a better understanding of the sensing mechanism of devices.
Processing of hollow sections
A system and method provide a material with uniform micro-structure. In an embodiment, an equal channel angular extrusion system includes an interior mandrel. The interior mandrel includes an expanding shear material section and a contracting shear material section. In addition, the system includes a material. The material is disposed about a portion of the interior mandrel. Moreover, the system includes a pressure application device. The pressure application device applies pressure to the material to force the material to contact the expanding shear material section to provide an expanded post-shear material section. Pressure from the pressure application device applies pressure to the material to force the expanded post-shear material section to contact the contracting shear material section to provide a contracted shear material section.
Size effect in stainless steel thin wires under tension
Miniaturization of modern devices drives the exploration into how materials behave in small dimensions. However, the mechanical behaviors of micro-scale specimens under varied loading conditions are still challenging to characterize and predict. In this work, specimen size-dependent weakening effect was experimentally revealed in 316L stainless steel thin wires under tension with wire diameter decreasing from 200 μm down to 61 μm. The underlying mechanisms were primarily associated with surface grain softening and strain localization, which were largely dependent on the number of grains across wire diameter. Through an analog composite model with surface and interior grains that follows the Hall-Petch relation, the extent of surface grain softening was found to coincide with the flow stress reduction due to lack of boundary strengthening. Further using elasto-plastic self-consistent polycrystal modeling, the stress-strain behaviors of interior and surface grains were well described in analogy to those of bulk materials with similar-size grains and extremely large grains, respectively. Subsequently, the analog composite model well simulated the specimen size-dependent weakening effect under tension. This article provided more insights into the size effect exploration and proposed a practical model for describing size-dependent mechanical behaviors of small-scale materials to be applied to miniaturized devices.
Large Magnetoresistance in Scandium Nitride Magnetic Tunnel Junctions Using First Principles
Abstract The state‐of‐the‐art magnetic tunnel junction, a cornerstone of spintronic devices and circuits, uses a magnesium oxide tunnel barrier that provides a uniquely large tunnel magnetoresistance at room temperature. However, the wide bandgap and band alignment of magnesium oxide‐iron systems increases the resistance‐area product and creates variability and breakdown challenges. Here, the authors study using first principles narrower‐bandgap scandium nitride (ScN) transport properties in magnetoresistive junctions in comparison to magnesium oxide. The results show a high magnetoresistance in Fe/ScN/Fe via Δ 1 and symmetry filtering with low wave function decay rates, suggesting scandium nitride could be a new barrier material for spintronic devices.
Stackable electronics enabled by freestanding 2d and 3d materials
In this talk, I will discuss about our unique strategy to isolate wafer-scale 2D materials into monolayers and stack them into a heterostructures by using a layer-resolved splitting (LRS) technique [1,2]. This technique enables my group at MIT to explore unprecedented wafer-scale 2D heterodevices. While 2D heterostructures promise interesting futuristic devices, the performance of 2D material-based devices is substantially inferior to that of conventional 3D semiconductor materials. However, 3D materials exist as their bulk form, thus it is challenging to stack them together for heterostructures. Obviously, conformal coating of such single-crystalline bulks on 3D features is impossible. My group at MIT has recently invented a 2D materials-based layer transfer (2DLT) technique that can produce single-crystalline freestanding membranes from any compound materials including III-V, III-N, and complex oxides [3,4]. This technique is based on remote epitaxy of single-crystalline films on graphene followed by peeling from graphene. Stacking of freestanding 3D material membranes will enable unprecedented 3D heterostructures whose performance is expected to be superior to that of 2D heterostructures. I will talk about our group’s effort on 3D heterostructures as well as 2D-3D mixed heterostructured devices [5].
Operando microscopy for neuromorphic hardware
Microscopy techniques can uncover the physical properties and dynamic behaviours of materials, driving the discovery of emergent phenomena and guiding the design of next-generation computing hardware. As artificial intelligence becomes pervasive, the demand for high-performance materials to support sustainable information technologies is growing. Here, this Review highlights state-of-the-art imaging from electron and X-ray to optical techniques to probe the dynamics of neuromorphic materials, including operando characterization of devices. We examine design principles for neuromorphic materials, along with obstacles that hinder their development. Emphasis is placed on spatially and temporally resolved approaches that capture state changes including phase transitions, ferroic switching and spin-wave propagation that emulate biological components such as neurons, synapses and their connectivity. We discuss challenges in operando characterization and the integration of artificial intelligence-driven analysis for feedback-guided material discovery. Finally, we outline opportunities for real-time imaging of neuromorphic systems, paving the way towards adaptive, brain-inspired hardware.
Properties of multiple quantum wells and their use in high-speed detectors and modulators
Quantum well systems lattice matched to GaAs and InP have emerged as important materials for use in long wavelength optoelectronic devices. Intrinsic problems associated with the growth of these quantum wells by molecular beam epitaxy are discussed and the luminescence properties of state-of-art quantum wells, using novel growth techniques are described. Finally, the properties of detectors, modulators and integrated devices made with these heterojunction materials are described and discussed.
Research Activities at Plasma Research Laboratory at NASA Ames Research Center
In order to meet NASA's requirements for the rapid development and validation of future generation electronic devices as well as associated materials and processes, enabling technologies are being developed at NASA-Ames Research Center using a multi-discipline approach. The first step is to understand the basic physics of the chemical reactions in the area of plasma reactors and processes. Low pressure glow discharges are indispensable in the fabrication of microelectronic circuits. These plasmas are used to deposit materials and also etch fine features in device fabrication. However, many plasma-based processes suffer from stability and reliability problems leading to a compromise in performance and a potentially increased cost for the semiconductor manufacturing industry. Although a great deal of laboratory-scale research has been performed on many of these processing plasmas, little is known about the gas-phase and surface chemical reactions that are critical in many etch and deposition processes, and how these reactions are influenced by the variation in operating conditions. Such a lack of understanding has hindered the development of process models that can aid in the scaling and improvement of plasma etch and deposition systems. Our present research involves the study of such plasmas. An inductively-coupled plasma (ICP) source in place of the standard upper electrode assembly of the Gaseous Electronics Conference (GEC) radio-frequency (RF) Reference Cell is used to investigate the discharge characteristics. This ICP source generates plasmas with higher electron densities and lower operating pressures than obtainable with the original parallel-plate version of the GEC Cell. This expanded operating regime is more relevant to new generations of industrial plasma systems being used by the microelectronics industry. The research goal is to develop an understanding of the physical phenomena involved in plasma processing and to measure much needed fundamental parameters, such as gas phase and surface reaction rates, species concentration, temperature, ion energy distribution, and electron number density.
Forced ion migration for chalcogenide phase change memory device
Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase change memories. The devices tested included GeTe/SnTe, Ge.sub.2Se.sub.3/SnTe, and Ge.sub.2Se.sub.3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more that two data states.
Forced ion migration for chalcogenide phase change memory device
Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge.sub.2Se.sub.3/SnTe, and Ge.sub.2Se.sub.3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more than two data states.
Forced Ion Migration for Chalcogenide Phase Change Memory Device
Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge2Se3/SnTe, and Ge2Se3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more than two data states.
The Material Plasma Exposure eXperiment: Mission and conceptual design
Mastering Plasma Material Interactions (PMI) is key for obtaining a high performance, high duty-cycle and safe operating fusion reactor. Numerous gaps exist in PMI which have to be addressed before a reactor can be built. In particular the lack of data at high ion fluence, fusion reactor divertor relevant plasma conditions and neutron displacement damage requires new experimental devices to be able to develop plasma facing materials and components. This has been recognized in the community and the U.S. fusion program is addressing this need with a new linear plasma device—the Material Plasma Exposure eXperiment (MPEX). MPEX will be a superconducting linear plasma device with magnetic fields of up to 2.5 T. The plasma source is a high-power helicon source (200 kW, 13.56 MHz). The electrons will be heated via Electron Bernstein Waves with microwaves using multiple 70 GHz gyrotrons (up to 600 kW in total). Ions will be heated via ion cyclotron heating in the so-called “magnetic beach heating” scheme in the frequency range of 6–9 MHz (up to 400 kW in total). An overview of the conceptual design and the project/design requirements is given in this paper.