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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 811 records · Page 45
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Collapse of the low temperature insulating state in Cr-doped V{sub 2}O{sub 3} thin films

We have grown epitaxial Cr-doped V{sub 2}O{sub 3} thin films with Cr concentrations between 0% and 20% on (0001)-Al{sub 2}O{sub 3} by oxygen-assisted molecular beam epitaxy. For the highly doped samples (>3%), a regular and monotonous increase of the resistance with decreasing temperature is measured. Strikingly, in the low doping samples (between 1% and 3%), a collapse of the insulating state is observed with a reduction of the low temperature resistivity by up to 5 orders of magnitude. A vacuum annealing at high temperature of the films recovers the low temperature insulating state for doping levels below 3% and increases the room temperature resistivity towards the values of Cr-doped V{sub 2}O{sub 3} single crystals. It is well-know that oxygen excess stabilizes a metallic state in V{sub 2}O{sub 3} single crystals. Hence, we propose that Cr doping promotes oxygen excess in our films during deposition, leading to the collapse of the low temperature insulating state at low Cr concentrations. These results suggest that slightly Cr-doped V{sub 2}O{sub 3} films can be interesting candidates for field effect devices.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Optical activity and defect/dopant evolution in ZnO implanted with Er

The effects of annealing on the optical properties and defect/dopant evolution in wurtzite (0001) ZnO single crystals implanted with Er ions are studied using a combination of Rutherford backscattering/channeling spectrometry and photoluminescence measurements. The results suggest a lattice recovery behavior dependent on ion dose and involving formation/evolution of an anomalous multipeak defect distribution, thermal stability of optically active Er complexes, and Er outdiffusion. An intermediate defect band occurring between the surface and ion-induced defects in the bulk is stable up to 900 °C and has a photoluminescence signature around 420 nm well corresponding to Zn interstitials. The optical activity of the Er atoms reaches a maximum after annealing at 700 °C but is not directly associated to the ideal Zn site configuration, since the Er substitutional fraction is maximal already in the as-implanted state. In its turn, annealing at temperatures above 700 °C leads to dissociation of the optically active Er complexes with subsequent outdiffusion of Er accompanied by the efficient lattice recovery.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Epitaxial ferromagnetic Fe{sub 3}Si on GaAs(111)A with atomically smooth surface and interface

Single crystal ferromagnetic Fe{sub 3}Si(111) films were grown epitaxially on GaAs(111)A by molecular beam epitaxy. These hetero-structures possess extremely low surface roughness of 1.3 Å and interfacial roughness of 1.9 Å, measured by in-situ scanning tunneling microscope and X-ray reflectivity analyses, respectively, showing superior film quality, comparing to those attained on GaAs(001) in previous publications. The atomically smooth interface was revealed by the atomic-resolution Z (atomic number)-contrast scanning transmission electron microscopy (STEM) images using the correction of spherical aberration (Cs)-corrected electron probe. Excellent crystallinity and perfect lattice match were both confirmed by high resolution x-ray diffraction. Measurements of magnetic property for the Fe{sub 3}Si/GaAs(111) yielded a saturation moment of 990 emu/cm{sup 3} with a small coercive field ≤1 Oe at room temperature.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Fast ion energy distribution from third harmonic radio frequency heating measured with a single crystal diamond detector at the Joint European Torus

Neutron spectroscopy measurements with a single crystal diamond detector have been carried out at JET, for the first time in an experiment aimed at accelerating deuterons to MeV energies with radio frequency heating at the third harmonic. Data are interpreted by means of the expected response function of the detector and are used to extract parameters of the highly non-Maxwellian distribution function generated in this scenario. A comparison with observations using a time of flight and liquid scintillator neutron spectrometers is also presented. The results demonstrate the capability of diamond detectors to contribute to fast ion physics studies at JET and are of more general relevance in view of the application of such detectors for spectroscopy measurements in the neutron camera of next step tokamak devices.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2015

Anisotropic electrical and thermal conductivity in Bi{sub 2}AE{sub 2}Co{sub 2}O{sub 8+δ} [AE = Ca, Sr{sub 1−x}Ba{sub x} (x = 0.0, 0.25, 0.5, 0.75, 1.0)] single crystals

Bi{sub 2}AE{sub 2}Co{sub 2}O{sub 8+δ} (AE represents alkaline earth), constructed by stacking of rock-salt Bi{sub 2}AE{sub 2}O{sub 4} and triangle CoO{sub 2} layers alternatively along c-axis, is one of promising thermoelectric oxides. The most impressive feature of Bi{sub 2}AE{sub 2}Co{sub 2}O{sub 8+δ}, as reported previously, is their electrical conductivity mainly lying along CoO{sub 2} plane, adjusting Bi{sub 2}AE{sub 2}O{sub 4} layer simultaneously manipulates both thermal conductivity and electrical conductivity. It in turn optimizes thermoelectric performance of these materials. In this work, we characterize the anisotropic thermal and electrical conductivity along both ab-plane and c-direction of Bi{sub 2}AE{sub 2}Co{sub 2}O{sub 8+δ} (AE = Ca, Sr, Ba, Sr{sub 1−x}Ba{sub x}) single crystals. The results substantiate that isovalence replacement in Bi{sub 2}AE{sub 2}Co{sub 2}O{sub 8+δ} remarkably modifies their electrical property along ab-plane; while their thermal conductivity along ab-plane only has a slightly difference. At the same time, both the electrical conductivity and thermal conductivity along c-axis of these materials also have dramatic changes. Certainly, the electrical resistance along c-axis is too high to be used as thermoelectric applications. These results suggest that adjusting nano-block Bi{sub 2}AE{sub 2}O{sub 4} layer in Bi{sub 2}AE{sub 2}Co{sub 2}O{sub 8+δ} cannot modify the thermal conductivity along high electrical conductivity plane (ab-plane here). The evolution of electrical property is discussed by Anderson localization and electron-electron interaction U. And the modification of thermal conductivity along c-axis is attributed to the microstructure difference. This work sheds more light on the manipulation of the thermal and electrical conductivity in the layered thermoelectric materials.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Superconducting properties and chemical composition of NbTiN thin films with different thickness

In this research, we systematically investigated the superconducting properties and chemical composition of NbTiN thin films prepared on single-crystal MgO substrates. The NbTiN thin films with different thicknesses (4–100 nm) were deposited by reactive DC magnetron sputtering at ambient temperature. We measured and analyzed the crystal structure and thickness dependence of the chemical composition using X-ray diffraction and X-ray photoelectron spectroscopy depth profiles. The films exhibited excellent superconducting properties, with a high superconducting critical temperature of 10.1 K, low resistivity (ρ{sub 20} = 93 μΩ cm), and residual resistivity ratio of 1.12 achieved for 4-nm-thick ultrathin NbTiN films prepared at the deposition current of 2.4 A. The stoichiometry and electrical properties of the films varied gradually between the initial and upper layers. A minimum ρ{sub 20} of 78 μΩ cm and a maximum residual resistivity ratio of 1.15 were observed for 12-nm-thick films, which significantly differ from the properties of NbN films with the same NaCl structure.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Spatial organization of plastic deformation in single crystals with different structure of slip dislocation

It is established that different structure of slip dislocation at the end of the linear hardening stage results in different distribution of dislocation charges in the volume of a single crystal. In the alloy with a near atomic order the slip of single dislocations leads to formation of planar structures—layers with the excess density of dislocations. In the alloy with long-range atomic order the slip of superdislocations brings the formation of the system of parallel rod-like charged dislocation linking.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Positron annihilation study of vacancy-type defects in Al single crystal foils with the tweed structures across the surface

The vacancy-type defects in the aluminum single crystal foils after a series of the cyclic tensions were studied using positron annihilation. Two components were identified in the positron lifetime spectra associated with the annihilation of free positrons and positrons trapped by dislocations. With increasing number of cycles the dislocation density firstly increases and reaches a maximum value at N = 10 000 cycles but then it gradually decreases and at N = 70 000 cycles falls down to the level typical for the virgin samples. The direct evidence on the formation of a two-phase system “defective near-surface layer/base Al crystal” in aluminum foils at cyclic tension was obtained using a positron beam with the variable energy.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Molecular dynamics simulation of hollow thick-walled cylinder collapse

The generation and evolution of plastic deformation in a hollow single-crystal cylinder under high-rate axisymmetric loading were studied. An advantage of the proposed loading scheme is that all loading modes are applied simultaneously within the chosen crystallographic plane of the cylinder base and different strain degrees are achieved along the specimen cross section. Molecular dynamics simulation was performed to show that the achievement of a certain strain causes the formation of structural defects on the inner surface of the specimen. The obtained results can be used to explain the main plastic deformation mechanisms of crystalline solids.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Role of crystallographic anisotropy in the formation of surface layers of single NiTi crystals after ion-plasma alloying

The structure of the surface and near-surface layers of single crystals of NiTi, differently oriented relative to the direction of ion beam treatment was investigated. The role of the crystallographic orientation in formation of structure of surface layers after ion-plasma alloying was revealed. It was found that the orientation effects of selective sputtering and channeling determine the thickness of the oxide and amorphous layers, the depth of penetration of ions and impurities, the distribution of Ni with depth.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Structure-phase state and mechanical properties of surface layers in titanium nikelide single crystals after shock mechanical treatment

The influence of ultrasonic shock surface treatment (USST) on refine structure and mechanical characteristics of surface layers and deformation behaviour of volume samples of TiNi(Fe, Mo) shape memory effect alloy single crystals is studied using optical and transmission electron microscope, X-ray diffraction, nanoindentation, mechanical attrition testing and experiments on uniaxial tension.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Interfacial dislocations in (111) oriented (Ba 0.7 Sr 0.3 )TiO 3 films on SrTiO 3 single crystal

In this study, we have investigated the interfacial structure of epitaxial (Ba,Sr)TiO 3 films grown on (111)-oriented SrTiO 3 single-crystal substrates using transmission electron microscopy (TEM) techniques. Compared with the (100) epitaxial perovskite films, we observe dominant dislocation half-loop with Burgers vectors of a<110> comprised of a misfit dislocation along <112>, and threading dislocations along <110> or <100>. The misfit dislocation with Burgers vector of a <110> can dissociate into two ½ a <110> partial dislocations and one stacking fault. We found the dislocation reactions occur not only between misfit dislocations, but also between threading dislocations. Via three-dimensional electron tomography, we retrieved the configurations of the threading dislocation reactions. The reactions between threading dislocations lead to a more efficient strain relaxation than do the misfit dislocations alone in the near-interface region of the (111)-oriented (Ba 0.7 Sr 0.3 )TiO 3 films.

(Ba 0.7 Sr 0.3 )TiO 3↗
DOE OSTI2015

Determination of 60° polarization nanodomains in a relaxor-based ferroelectric single crystal

We report a determination of monoclinic nanodomains in PMN-xPT with x = 31%PT by using scanning convergent beam electron diffraction (SCBED). We show the presence of 60 ± α degree nanodomains with C m -like symmetry as well as significant variations (α) in local polarization directions across lengths of ~10 nm. The principle of our technique is general and can be applied for the determination of polarization domains in other ferroelectric materials of different symmetry.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Broadband nanophotonic waveguides and resonators based on epitaxial GaN thin films

We demonstrate broadband, low loss optical waveguiding in single crystalline GaN grown epitaxially on c-plane sapphire wafers through a buffered metal-organic chemical vapor phase deposition process. High Q optical microring resonators are realized in near infrared, infrared, and near visible regimes with intrinsic quality factors exceeding 50 000 at all the wavelengths we studied. TEM analysis of etched waveguide reveals growth and etch-induced defects. Reduction of these defects through improved material and device processing could lead to even lower optical losses and enable a wideband photonic platform based on GaN-on-sapphire material system.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

A device for the application of uniaxial strain to single crystal samples for use in synchrotron radiation experiments

We present the design, construction, and testing of a straining device compatible with many different synchrotron radiation techniques, in a wide range of experimental environments (including low temperature, high field and ultra-high vacuum). The device has been tested by X-ray diffraction on single crystal samples of quasi-one-dimensional Cs{sub 2}Mo{sub 6}Se{sub 6} and K{sub 2}Mo{sub 6}Se{sub 6}, in which microscopic strains up to a Δc/c = 0.12% ± 0.01% change in the c lattice parameters have been achieved. We have also used the device in an inelastic X-ray scattering experiment, to probe the strain-dependent speed of sound ν along the c axis. A reduction Δν/ν of up to −3.8% was obtained at a strain of Δc/c = 0.25% in K{sub 2}Mo{sub 6}Se{sub 6}.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2015

Structural and vibrational properties of single crystals of Scandia, Sc{sub 2}O{sub 3} under high pressure

We report the results of single-crystal X-ray diffraction and Raman spectroscopy studies of scandium oxide, Sc{sub 2}O{sub 3}, at ambient temperature under high pressure up to 55 and 28 GPa, respectively. Both X-ray diffraction and Raman studies indicated a phase transition from the cubic bixbyite phase (so-called C-Res phase) to a monoclinic C2/m phase (so-called B-Res phase) at pressures around 25–28 GPa. The transition was accompanied by a significant volumetric drop by ∼6.7%. In addition, the Raman spectroscopy detected a minor crossover around 10–12 GPa, which manifested in the appearance of new and disappearance of some Raman modes, as well as in softening of one Raman mode. We found the bulk modulus values of the both C-Res and B-Res phases as B{sub 0} = 198.2(3) and 171.2(1) GPa (for fixed B′ = 4), respectively. Thus, the denser high-pressure lattice of Sc{sub 2}O{sub 3} is much softer than the original lattice. We discuss possible mechanisms that might be responsible for the pronounced elastic softening in the monoclinic high-pressure phase in this “simple” oxide with an ultra-wide band gap.

36 MATERIALS SCIENCE↗
DOE OSTI2015

A photoluminescence study of excitonic grade CuInSe{sub 2} single crystals irradiated with 6 MeV electrons

High-quality single crystals of CuInSe{sub 2} with near-stoichiometric elemental compositions were irradiated with 6 MeV electrons, at doses from 10{sup 15} to 3 × 10{sup 18 }cm{sup −2}, and studied using photoluminescence (PL) at temperatures from 4.2 to 300 K. Before irradiation, the photoluminescence spectra reveal a number of sharp and well resolved lines associated with free- and bound-excitons. The spectra also show broader bands relating to free-to-bound transitions and their phonon replicas in the lower energy region below 1.0 eV. The irradiation with 6 MeV electrons reduces the intensity of the free- and the majority of the bound-exciton peaks. Such a reduction can be seen for doses above 10{sup 16 }cm{sup −2}. The irradiation induces new PL lines at 1.0215 eV and 0.9909 eV and also enhances the intensity of the lines at 1.0325 and 1.0102 eV present in the photoluminescence spectra before the irradiation. Two broad bands at 0.902 and 0.972 eV, respectively, are tentatively associated with two acceptor-type defects: namely, interstitial selenium (Se{sub i}) and copper on indium site (Cu{sub In}). After irradiation, these become more intense suggesting an increase in the concentration of these defects due to irradiation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Tuning of magnetic ordering by Y substitution onto Tb site in the nanocrystalline TbMnO{sub 3}

We report the magnetic properties, of nano-crystalline powders Tb{sub 1−x}Y{sub x}MnO{sub 3} (x = 0, 0.1, 0.2, 0.3 and 0.4), as perceived by neutron diffraction, and elucidate the effect of Tb site substitution on the magnetic structure of TbMnO{sub 3}. All samples crystallized in the orthorhombic structure conforming to space group Pnma, and exhibited an incommensurate collinear antiferromagnetic ordering of the Mn ions below ∼40 K. Furthermore, at T ≤ 20 K, all these samples showed a change in magnetic structure (of Mn moments) to a spiral ordering down to 2 K, the lowest measured temperature. For the samples with x = 0, 0.1, and 0.2, a short-ranged two dimensional (2D) ordering of Tb moments was also observed at 2 K. However, for the other samples (x = 0.3 and 0.4), no magnetic ordering of Tb moments was found down to 2 K. So with Y substitution, a crossover from 2D ordering to a disordering of Tb moments was observed. The moments at the Mn site were found to be lower than the full Mn{sup 3+} (4μ{sub B}) moment for all the samples below 40 K. The magnetic properties of all the samples studied by us in nano form are more pronounced than those of the reported single crystals of same compositions [V. Yu. Ivanov et al., JETP Lett. 91, 392–397 (2010)].

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗