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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 811 records · Page 45

All sources NASA NTRS DOE OSTI

NASA NTRS1990

Rapid recovery from transient faults in the fault-tolerant processor with fault-tolerant shared memory

The Draper fault-tolerant processor with fault-tolerant shared memory (FTP/FTSM), which is designed to allow application tasks to continue execution during the memory alignment process, is described. Processor performance is not affected by memory alignment. In addition, the FTP/FTSM incorporates a hardware scrubber device to perform the memory alignment quickly during unused memory access cycles. The FTP/FTSM architecture is described, followed by an estimate of the time required for channel reintegration.

Harper, Richard E.↗

NASA NTRS1999

EXPRESS Rack Technology for Space Station

The EXPRESS rack provides accommodations for standard Mid-deck Locker and ISIS drawer payloads on the International Space Station. A design overview of the basic EXPRESS rack and two derivatives, the Human Research Facility and the Habitat Holding Rack, is given in Part I. In Part II, the design of the Solid State Power Control Module (SSPCM) is reviewed. The SSPCM is a programmable and remotely controllable power switching and voltage conversion unit which distributes and protects up to 3kW of 12OVDC and 28VDC power to payloads and rack subsystem components. Part III details the development and testing of a new data storage device, the BRP EXPRESS Memory Unit (BEMU). The BEMU is a conduction-cooled device which operates on 28VDC and is based on Boeing-modified 9GB commercial disk-drive technology. In Part IV results of a preliminary design effort for a rack Passive Damping System (PDS) are reported. The PDS is intended to isolate ISPR-based experiment racks from on-orbit vibration. System performance predictions based on component developmental testing indicate that such a system can provide effective isolation at frequencies of 1 Hz and above.

Davis, Ted B.↗

DOE OSTI2015

Soluble porphyrin polymers

Porphyrin polymers of Structure 1, where n is an integer (e.g., 1, 2, 3, 4, 5, or greater) ##STR00001## are synthesized by the method shown in FIGS. 2A and 2B. The porphyrin polymers of Structure 1 are soluble in organic solvents such as 2-MeTHF and the like, and can be synthesized in bulk (i.e., in processes other than electropolymerization). These porphyrin polymers have long excited state lifetimes, making the material suitable as an organic semiconductor for organic electronic devices including transistors and memories, as well as solar cells, sensors, light-emitting devices, and other opto-electronic devices.

14 SOLAR ENERGY↗

DOE OSTI2014

Smart trigger logic for focal plane arrays

An electronic device includes a memory configured to receive data representing light intensity values from pixels in a focal plane array and a processor that analyzes the received data to determine which light values correspond to triggered pixels, where the triggered pixels are those pixels that meet a predefined set of criteria, and determines, for each triggered pixel, a set of neighbor pixels for which light intensity values are to be stored. The electronic device also includes a buffer that temporarily stores light intensity values for at least one previously processed row of pixels, so that when a triggered pixel is identified in a current row, light intensity values for the neighbor pixels in the previously processed row and for the triggered pixel are persistently stored, as well as a data transmitter that transmits the persistently stored light intensity values for the triggered and neighbor pixels to a data receiver.

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2019

Tuning Ultrafast Photoinduced Strain in Ferroelectric-Based Devices

Ferroelectric materials exhibit coupled degrees of freedom and possess a switchable electric polarization coupled to strain, making them good piezoelectrics and enabling numerous devices including nonvolatile memories, actuators, and sensors. Moreover, novel photovoltaic effects are encountered through the interplay of electric polarization with the material optical properties. Consequently, light-induced deformation in ferroelectrics, or photostriction, combining photovoltaic and converse piezoelectric effects, is under investigation in the quest for multifunctional materials. Using time-resolved X-ray diffraction, the first control of ultrafast photoinduced strain is demonstrated through in situ tuning of the polarization state in ferroelectric-based devices. Both the magnitude and the sign of the photoinduced strain strongly depend on the transient photoinduced change of the internal electric field in the ferroelectric layer, and can be actively engineered to achieve two distinct remanent photostrictive responses. These results provide fundamental insight into light–matter interaction in ferroelectrics and exciting new avenues for materials functionality engineering.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Electrical manipulation of skyrmions in a chiral magnet

Writing, erasing and computing are three fundamental operations required by any working electronic device. Magnetic skyrmions could be essential bits in promising in emerging topological spintronic devices. In particular, skyrmions in chiral magnets have outstanding properties like compact texture, uniform size, and high mobility. However, creating, deleting, and driving isolated skyrmions, as prototypes of aforementioned basic operations, have been a grand challenge in chiral magnets ever since the discovery of skyrmions, and achieving all these three operations in a single device is even more challenging. Here, by engineering chiral magnet Co 8 Zn 10 Mn 2 into the customized micro-devices for in-situ Lorentz transmission electron microscopy observations, we implement these three operations of skyrmions using nanosecond current pulses with a low current density of about 10 10 A·m -2 at room temperature. A notched structure can create or delete magnetic skyrmions depending on the direction and magnitude of current pulses. We further show that the magnetic skyrmions can be deterministically shifted step-by-step by current pulses, allowing the establishment of the universal current-velocity relationship. These experimental results have immediate significance towards the skyrmion-based memory or logic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2019

Bias current dependence of superconducting transition temperature in superconducting spin-valve nanowires

Competition between superconducting and ferromagnetic ordering at interfaces between ferromagnets (F) and superconductors (S) gives rise to several proximity effects such as odd-triplet superconductivity and spin-polarized supercurrents. A prominent example of an S/F proximity effect is the spin switch effect (SSE) observed in S/F/N/F superconducting spin-valve multilayers, in which the superconducting transition temperature T c is controlled by the angle $\phi$ between the magnetic moments of the F layers separated by a nonmagnetic metallic spacer N. Here we present an experimental study of SSE in Nb/Co/Cu/Co/CoO x nanowires measured as a function of bias current flowing in the plane of the layers. In this work, these measurements reveal an unexpected dependence of T c ($\phi$) on the bias current: T c (π)–T c (0) changes sign with increasing current bias. We attribute the origin of this bias dependence of the SSE to a spin Hall current flowing perpendicular to the plane of the multilayer, which suppresses T c of the multilayer. The bias dependence of SSE can be important for hybrid F/S devices such as those used in cryogenic memory for superconducting computers as device dimensions are scaled down to the nanometer length scale.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2025

Extending SEER for Extreme Heterogeneity

Heterogeneous and multi-device nodes are increasingly common in high-performance computing and data centers, yet existing programming models often lack simple, transparent, and portable support for these diverse architectures. The main contribution of this work is the development of novel SEER capabilities to address this challenge by providing a descriptive programming model that allows applications to seamlessly leverage heterogeneous nodes across various device types. SEER uses efficient memory management and can select the proper device[s] depending on the computational cost of the applications. This is completely transparent to the programmer, thereby providing a highly productive programming environment. Integrating extreme heterogeneity into the SEER library as shown with the use of NVIDIA and AMD GPUs simultaneously allows it to expand and exploit the performance possibilities. Our analysis based on the well-known Conjugate Gradient algorithm reports accelerations above 1.5 × on computationally demanding steps of such an algorithm by using both architectures simultaneously.

Teranishi, Keita [ORNL] (ORCID:0000000166472690)↗

NASA NTRS2020

NASA Goddard Space Flight Center’s Compendium of Radiation Effects Test Results

Total ionizing dose, displacement damage dose, and single event effects testing were performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include FETs, flash memory, FPGAs, optoelectronics, digital, analog, and bipolar devices.

Single Event Effects (SEE)↗

NASA NTRS2020

NASA Goddard Space Flight Center’s Compendium of Radiation Effects Test Results

Single Event Effects (SEE)↗

DOE OSTI2018

Institute for Sustained Performance, Energy, and Resilience (SUPER): University of Utah Final Report

Over the course of this project, computational scientists working on behalf of the Department of Energy's Office of Science (DOE SC) were exploiting a new generation of petascale computing resources to make previously inaccessible discoveries in a broad range of disciplines including physics, chemistry and material science. The computational systems underpinning this work increased in performance potential from tens to hundreds of Pflop/s, and evolved significantly from those in use at the beginning of the project in terms of available concurrency; wider use of accelerators such as graphics processing units(GPUs); and changes to the memory hierarchy including the incorporation of a new generation of persistent devices (e.g., phase change memory). To ensure that DOE's computational scientists can successfully exploit this emerging generation of high performance computing (HPC) systems, the University of Southern California (USC) assembled a broad team of computer scientists with the expertise to address the most pressing challenges of DOE's computing systems: (a) end-to-end performance optimization, including single-node performance, interprocessor communication, load balancing and I/O; (b) performance portability for heterogeneous systems, including accelerators; (c) minimizing energy consumption; (d) resilient computation; and, (e) exploiting new memory technology.

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2013

Ames Lab 101: Ultrafast Magnetic Switching

Ames Laboratory physicists have found a new way to switch magnetism that is at least 1000 times faster than currently used in magnetic memory technologies. Magnetic switching is used to encode information in hard drives, magnetic random access memory and other computing devices. The discovery potentially opens the door to terahertz and faster memory speeds.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Electrically Controlled All-Antiferromagnetic Tunnel Junctions on Silicon with Large Room-Temperature Magnetoresistance

Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous electrical writing and reading of information, which are also compatible with established silicon-based manufacturing. Recent experiments have shown tunneling magnetoresistance (TMR) readout in epitaxial AFM tunnel junctions. However, these TMR structures are not grown using a silicon-compatible deposition process, and controlling their AFM order required external magnetic fields. Here are shown three-terminal AFM tunnel junctions based on the noncollinear antiferromagnet PtMn 3 , sputter-deposited on silicon. The devices simultaneously exhibit electrical switching using electric currents, and electrical readout by a large room-temperature TMR effect. First-principles calculations explain the TMR in terms of the momentum-resolved spin-dependent tunneling conduction in tunnel junctions with noncollinear AFM electrodes.

36 MATERIALS SCIENCE↗

DOE OSTI2015

Quantifying data retention of perpendicular spin-transfer-torque magnetic random access memory chips using an effective thermal stability factor method

The thermal stability of perpendicular Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM) devices is investigated at chip level. Experimental data are analyzed in the framework of the Néel-Brown model including distributions of the thermal stability factor Δ. We show that in the low error rate regime important for applications, the effect of distributions of Δ can be described by a single quantity, the effective thermal stability factor Δ{sub eff}, which encompasses both the median and the standard deviation of the distributions. Data retention of memory chips can be assessed accurately by measuring Δ{sub eff} as a function of device diameter and temperature. We apply this method to show that 54 nm devices based on our perpendicular STT-MRAM design meet our 10 year data retention target up to 120 °C.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2025

Programmable Cryogenic Memory in a Ge/GeSi Heterostructure

Programmable memory components that operate optimally at cryogenic temperatures are essential for cryogenic computing architectures that seek to implement computing-in-memory. In this work, we demonstrate highly programmable memory in a Ge/GeSi heterostructure field-effect transistor (HFET). To operate, the HFET is gated to introduce positive carriers within the Ge quantum well, creating a high-conductance state. We show that this device can be set to a low-conductance state by sweeping a negative bias on the device drain, and reset it to its high-conductance state by sweeping a more positive bias on the device gate, thereby creating memory. We then determine that the device can be programmed within a 103 range of conductances using either the SET or the RESET operation. We propose that memory is achieved through charge trapping as carriers tunnel out of the quantum well, and that altering the density and spatial distribution of carriers modulates the device conductance. This mechanism exhibits endurance over 1000 cycles at temperatures ≤ 25 K, suggesting that the carrier traps are located at the oxide-semiconductor interface. As a first demonstration of programmable conductance in a Ge/GeSi HFET, this work highlights the potential of group-IV HFETs to perform as analog cryogenic memory components.

cryogenic memory↗

NASA NTRS2002

Inadvertently programmed bits in Samsung 128 Mbit flash devices: a flaky investigation

JPL's X2000 avionics design pioneers new territory by specifying a non-volatile memory (NVM) board based on flash memories. The Samsung 128Mb device chosen was found to demonstrate bit errors (mostly program disturbs) and block-erase failures that increase with cycling. Low temperature, certain pseudo- random patterns, and, probably, higher bias increase the observable bit errors. An experiment was conducted to determine the wearout dependence of the bit errors to 100k cycles at cold temperature using flight-lot devices (some pre-irradiated). The results show an exponential growth rate, a wide part-to-part variation, and some annealing behavior.

flash memory program disturb wearout erase fail re↗

DOE OSTI2021

Exsolution Synthesis of Nanocomposite Perovskites with Tunable Electrical and Magnetic Properties

Nanostructured functional oxides play an important role in enabling clean energy technologies and novel memory and processor devices. Using thin-film La 0.6 Sr 0.4 FeO 3 (LSF) as a model system, the novel utility of exsolution in fabricating self-assembled metal oxide nanocomposites with tunable functionalities is shown. Exsolution triggers the formation of metallic iron (Fe 0 ) nanoparticles, Ruddlesden–Popper domains, and nm-scale percolated Fe-deficient channels in LSF. Combining multimodal characterization with numerical modeling, the chemical, magnetic, and electrical properties of the exsolution-synthesized nanocomposite at different stages of Fe 0 exsolution as well as during redox cycling are assessed. After exsolution, the electronic conductivity of the nanocomposite LSF increased by more than two orders of magnitude. Based on numerical analysis representing all the constituents, it is expected that this increase in conductivity originates mainly from the Fe-deficient percolating channels formed during exsolution. Moreover, the exsolved nanocomposite is redox-active even at moderate temperatures. Such redox capabilities can enable dynamic control of the nanocomposite functionality by tailoring the oxygen non-stoichiometry. This concept is demonstrated with a continuous modulation of magnetization between 0 and 110 emu cm -3 . These findings point out that exsolution may serve as a platform for scalable fabrication of complex metal oxide nanocomposites for electrochemical and electronic applications.

36 MATERIALS SCIENCE↗

DOE OSTI2018

Current-Induced Skyrmion Generation through Morphological Thermal Transitions in Chiral Ferromagnetic Heterostructures

Magnetic skyrmions promise breakthroughs in future memory and computing devices due to their inherent stability and small size. Their creation and current driven motion have been recently observed at room temperature, but the key mechanisms of their formation are not yet well-understood. Here it is shown that in heavy metal/ferromagnet heterostructures, pulsed currents can drive morphological transitions between labyrinth-like, stripe-like, and skyrmionic states. Using high-resolution X-ray microscopy, the spin texture evolution with temperature and magnetic field is imaged and it is demonstrated that with transient Joule heating, topological charges can be injected into the system, driving it across the stripe-skyrmion boundary. The observations are explained through atomistic spin dynamic and micromagnetic simulations that reveal a crossover to a global skyrmionic ground state above a threshold magnetic field, which is found to decrease with increasing temperature. It is demonstrated how by tuning the phase stability, one can reliably generate skyrmions by short current pulses and stabilize them at zero field, providing new means to create and manipulate spin textures in engineered chiral ferromagnets.

36 MATERIALS SCIENCE↗