Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Growth efficiency”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 811 records · Page 45

A Comprehensive Characterization of Microorganisms and Allergens in Spacecraft Environment

The determination of risk from infectious disease during long-duration missions is composed of several factors including (1) the host#s susceptibility, (2) the host#s exposure to the infectious disease agent, and (3) the concentration of the infectious agent, and (4) the characteristics of the infectious agent. While stringent steps are taken to minimize the transfer of potential pathogens to spacecraft, several medically significant organisms have been isolated from both the Mir and International Space Station (ISS). Historically, the method for isolation and identification of microorganisms from spacecraft environmental samples depended upon their growth on culture media. Unfortunately, only a fraction of the organisms may grow on a culture medium, potentially omitting those microorganisms whose nutritional and physical requirements for growth are not met. Thus, several pathogens may not have been detected, such as Legionella pneumophila, the etiological agent of Legionnaire#s disease. We hypothesize that environmental analysis using non-culture-based technologies will reveal microorganisms, allergens, and microbial toxins not previously reported in spacecraft, allowing for a more complete health assessment. The development of techniques for this flight experiment, operationally named SWAB, has already provided advances in NASA laboratory processes and beneficial information toward human health risk assessment. The first accomplishment of the SWAB experiment was the incorporation of 16S ribosomal DNA sequencing for the identification of bacteria. The use of this molecular technique has increased bacterial speciation of environmental isolates from previous flights three fold compared to conventional methodology. This increased efficiency in bacterial speciation provides a better understanding of the microbial ecology and the potential risk to the crew. Additional SWAB studies focused on the use of molecular-based DNA fingerprinting using repetitive sequencebased polymerase chain reaction (rep-PCR). This technology has allowed contamination tracking of microorganisms between crewmembers and their environment. This study not only demonstrated that ISS has a greater diversity of organisms than originally expected, but also provided insight into possible routes of infection to the crew. Additional ground-based studies used rep-PCR and protein based assays to determine the potential of methicillin resistant Staphylococcus aureus (MRSA) aboard ISS. MRSA has become increasingly common on Earth and pose a treatment problem for infections during flight. While no MRSA have been isolated from ISS to date, the mecA gene product that is responsible for methicillin resistance was isolated in other Staphylococcus species aboard ISS suggesting a potential of MRSA through gene transfer. Using improved sample collection technologies, flight sampling for SWAB was initiated in August 2006 and should continue through spring of 2007. The focus of these flight samples is the collection of DNA for evaluation by Denaturing Gradient Gel Electrophoresis (DGGE). Unlike other techniques, DGGE does not depend on any microbial growth on culture media allowing a more comprehensive assessment of the spacecraft interior. This study should provide insight into the true microbial ecology that is experienced by the crew during flight. This information will lead toward an accurate microbial risk assessment to help set flight requirements to protect the safety, health, and performance of the crew.

Ott, C. M.↗

Wheat production in controlled environments

Conditions are optimized for maximum yield and quality of wheat to be used in a controlled environment life support system (CELSS) in a Lunar or Martian base or a spacecraft. With yields of 23 to 57 g/sq m/d of edible biomass, a minimum size for a CELSS would be between 12 and 30 sq m per person, utilizing about 600 W/sq m of electrical energy for artificial light. Temperature, irradiance, photoperiod, carbon dioxide levels, humidity, and wind velocity are controlled in growth chambers. Nutrient solutions (adjusted for wheat) are supplied to the roots via a recirculating system that controls pH by adding HNO3 and controlling the NO3/NH4 ratio in solution. A rock-wool plant support allows direct seeding and densities up to 10,000 plants sq m. Densities up to 2000 plants/sq m appear to increase seed yield. Biomass production increases almost linearily with increasing irradiance from 400 to 1700 micromol/sq m/s of photosynthetic photon flux, but the efficiency of light utilization decreases over this range. Photoperiod and temperature both have a profound influence on floral initiation, spikelet formation, stem elongation, and fertilization.

Salisbury, Frank B.↗

The Explorer of Diffuse Galactic Emission (EDGE): Determining the Large-Scale Structure Evolution in the Universe

Measurements of the large-scale anisotropy of the Cosmic Infared Background (CIB) can be used to determine the characteristics of the distribution of galaxies at the largest spatial scales. With this information important tests of galaxy evolution models and primordial structure growth are possible. In this paper, we describe the scientific goals, instrumentation, and operation of EDGE, a mission using an Antarctic Long Duration Balloon (LDB) platform. EDGE will osbserve the anisotropy in the CIB in 8 spectral bands from 270 GHz-1.5 THz with 6 arcminute angular resolution over a region -400 square degrees. EDGE uses a one-meter class off-axis telescope and an array of Frequency Selective Bololeters (FSB) to provide the compact and efficient multi-colar, high sensitivity radiometer required to achieve its scientific objectives.

Silverberg, R. F.↗

Accelerated Life Structural Benchmark Testing for a Stirling Convertor Heater Head

For proposed long-duration NASA Space Science missions, the Department of Energy, Lockheed Martin, Infinia Corporation, and NASA Glenn Research Center are developing a high-efficiency, 110 W Stirling Radioisotope Generator (SRG110). A structurally significant limit state for the SRG110 heater head component is creep deformation induced at high material temperature and low stress level. Conventional investigations of creep behavior adequately rely on experimental results from uniaxial creep specimens, and a wealth of creep data is available for the Inconel 718 material of construction. However, the specified atypical thin heater head material is fine-grained with a heat treatment that limits precipitate growth, and little creep property data for this microstructure is available in the literature. In addition, the geometry and loading conditions apply a multiaxial stress state on the component, far from the conditions of uniaxial testing. For these reasons, an extensive experimental investigation is ongoing to aid in accurately assessing the durability of the SRG110 heater head. This investigation supplements uniaxial creep testing with pneumatic testing of heater head-like pressure vessels at design temperature with stress levels ranging from approximately the design stress to several times that. This paper presents experimental results, post-test microstructural analyses, and conclusions for four higher-stress, accelerated life tests. Analysts are using these results to calibrate deterministic and probabilistic analytical creep models of the SRG110 heater head.

Krause, David L.↗

Reproducible Growth of High-Quality Cubic-SiC Layers

Semiconductor electronic devices and circuits based on silicon carbide (SiC) are being developed for use in high-temperature, high-power, and/or high-radiation conditions under which devices made from conventional semiconductors cannot adequately perform. The ability of SiC-based devices to function under such extreme conditions is expected to enable significant improvements in a variety of applications and systems. These include greatly improved high-voltage switching for saving energy in public electric power distribution and electric motor drives; more powerful microwave electronic circuits for radar and communications; and sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines.

Neudeck, Philip G.↗

SiC Technology

Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching [1- 4] for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications [5-7] to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be realized in experimental SiC devices, primarily due to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems [9]. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high temperature and/or high power SiC electronics are identified.

Neudeck, Philip G.↗

Mars Hybrid Propulsion System Trajectory Analysis: Crew Missions - Part I

NASAs Human spaceflight Architecture team is developing a reusable hybrid transportation architecture in which both chemical and electric propulsion systems are used to send crew and cargo to Mars destinations such as Phobos, Deimos, the surface of Mars, and other orbits around Mars. By combining chemical and electrical propulsion into a single space- ship and applying each where it is more effective, the hybrid architecture enables a series of Mars trajectories that are more fuel-efficient than an all chemical architecture without significant increases in flight times. This paper provides the analysis of the interplanetary segments of the three Evolvable Mars Campaign crew missions to Mars using the hybrid transportation architecture. The trajectory analysis provides departure and arrival dates and propellant needs for the three crew missions that are used by the campaign analysis team for campaign build-up and logistics aggregation analysis. Sensitivity analyses were performed to investigate the impact of mass growth, departure window, and propulsion system performance on the hybrid transportation architecture. The results and system analysis from this paper contribute to analyses of the other human spaceflight architecture team tasks and feed into the definition of the Evolvable Mars Campaign.

Chai, Patrick R.↗

Laser-zone Growth in a Ribbon-to-ribbon (RTR) Process Silicon Sheet Growth Development for the Large Area Silicon Sheet Task of the Low Cost Solar Array Project

A technique for growing limited-length ribbons continually was demonstrated. This Rigid Edge technique can be used to recrystallize about 95% of the polyribbon feedstock. A major advantage of this method is that only a single, constant length silicon ribbon is handled throughout the entire process sequence; this may be accomplished using cassettes similar to those presently in use for processing Czochralski waters. Thus a transition from Cz to ribbon technology can be smoothly affected. The maximum size being considered, 3 inches x 24 inches, is half a square foot, and will generate 6 watts for 12% efficiency at 1 sun. Silicon dioxide has been demonstrated as an effective, practical diffusion barrier for use during the polyribbon formation.

Baghdadi, A.↗

Validation Results for LEWICE 3.0

A research project is underway at NASA Glenn to produce computer software that can accurately predict ice growth under any meteorological conditions for any aircraft surface. This report will present results from version 3.0 of this software, which is called LEWICE. This version differs from previous releases in that it incorporates additional thermal analysis capabilities, a pneumatic boot model, interfaces to computational fluid dynamics (CFD) flow solvers and has an empirical model for the supercooled large droplet (SLD) regime. An extensive comparison of the results in a quantifiable manner against the database of ice shapes and collection efficiency that have been generated in the NASA Glenn Icing Research Tunnel (IRT) has also been performed. The complete set of data used for this comparison will eventually be available in a contractor report. This paper will show the differences in collection efficiency between LEWICE 3.0 and experimental data. Due to the large amount of validation data available, a separate report is planned for ice shape comparison. This report will first describe the LEWICE 3.0 model for water collection. A semi-empirical approach was used to incorporate first order physical effects of large droplet phenomena into icing software. Comparisons are then made to every single element two-dimensional case in the water collection database. Each condition was run using the following five assumptions: 1) potential flow, no splashing; 2) potential flow, no splashing with 21 bin drop size distributions and a lift correction (angle of attack adjustment); 3) potential flow, with splashing; 4) Navier-Stokes, no splashing; and 5) Navier-Stokes, with splashing. Quantitative comparisons are shown for impingement limit, maximum water catch, and total collection efficiency. The results show that the predicted results are within the accuracy limits of the experimental data for the majority of cases.

Wright, William B.↗

Single crystal growth of upgraded metallurgical silicon by HEM for photovoltaic applications

Commercially available metallurgical grade (MG) silicon has high B and P content which is not reduced significantly by directional solidification. By choosing high purity raw materials for an experimental Submerged Electrode Arc Furnace, most of the impurities are reduced to 10 ppmw. Directional solidification of upgraded metallurgical grade (UMG) silicon by the Heat Exchanger Method (HEM) has produced 16 cm x 16 cm cross section ingots with nearly single crystal structure. The main problem encountered during directional solidification was SiC impurities dispersed through the structure. Solar cells fabricated from UMG silicon that was directionally solidified twice by HEM have shown up to 12.33% (am1) conversion efficiency.

Khattak, C. P.↗

Vapor phase growth technique of III-V compounds utilizing a preheating step

In the vapor phase epitaxy fabrication of semiconductor devices and in particular semiconductor lasers, the deposition body on which a particular layer of the laser is to be grown is preheated to a temperature about 40.degree. to 60.degree. C. lower than the temperature at which deposition occurs. It has been discovered that by preheating at this lower temperature there is reduced thermal decomposition at the deposition surface, especially for semiconductor materials such as indium gallium phosphide and gallium arsenide phosphide. A reduction in thermal decomposition reduces imperfections in the deposition body in the vicinity of the deposition surface, thereby providing a device with higher efficiency and longer lifetime.

Olsen, Gregory Hammond↗

Diurnal Forcing of Planetary Atmospheres

Much progress has been made on calculations of the Martian seasonal water cycle using the Mars Climate Model developed for this purpose. Two papers, documenting the model and the water transport results obtained with it have been published in the Journal of Geophysical Research - Planets. An additional paper describing results related to the evolution of the seasonal water cycle as a result of orbital changes was published in Advances in Space Research. Since that time, further studies have concentrated on the consequences of the soil adsorption required to match the observed water cycle and its relation to the stability of ground ice and other potential water reservoirs. Earth-related studies have concentrated on incorporating an efficient and realistic microphysical model into the Ames Stratospheric General Circulation Model used to simulate the spread of the ML Pinatubo and other volcanic clouds in the stratosphere. In addition, visualizations of the simulations are being incorporated into a video describing the UARS mission. A paper describing the new stratospheric aerosol microphysics package (and its consequences for volcanic cloud evolution) will be submitted in the near future. The paper will discuss the relative importance of condensation and coagulation to early particle growth and the separation of the cloud by sedimentation of the larger particles. A more general paper which highlights the observation that particle number densities did not increase dramatically after the ML Pinatubo eruption is planned. Simulations of atmospheric transport will be extended to include studies of terrestrial tropospheric tracers using the Fifth-Generation Penn State/NCAR Mesoscale Model.

Houben, Howard C.↗

Magnetic Field Suppression of Flow in Semiconductor Melt

One of the most promising approaches for the reduction of convection during the crystal growth of conductive melts (semiconductor crystals) is the application of magnetic fields. Current technology allows the experimentation with very intense static fields (up to 80 KGauss) for which nearly convection free results are expected from simple scaling analysis in stabilized systems (vertical Bridgman method with axial magnetic field). However, controversial experimental results were obtained. The computational methods are, therefore, a fundamental tool in the understanding of the phenomena accounting during the solidification of semiconductor materials. Moreover, effects like the bending of the isomagnetic lines, different aspect ratios and misalignments between the direction of the gravity and magnetic field vectors can not be analyzed with analytical methods. The earliest numerical results showed controversial conclusions and are not able to explain the experimental results. Although the generated flows are extremely low, the computational task is a complicated because of the thin boundary layers. That is one of the reasons for the discrepancy in the results that numerical studies reported. Modeling of these magnetically damped crystal growth experiments requires advanced numerical methods. We used, for comparison, three different approaches to obtain the solution of the problem of thermal convection flows: (1) Spectral method in spectral superelement implementation, (2) Finite element method with regularization for boundary layers, (3) Multiquadric method, a novel method with global radial basis functions, that is proven to have exponential convergence. The results obtained by these three methods are presented for a wide region of Rayleigh and Hartman numbers. Comparison and discussion of accuracy, efficiency, reliability and agreement with experimental results will be presented as well.

Fedoseyev, A. I.↗

Technologies For Maintaining Animals In Space: Lighting, Air Quality, Noise, Food And Water

In the terrestrial environment multiple time cues exist. Zeitgebers have been identified and studied for their ability to convey temporal information to various physiological systems. In the microgravity experiment it is necessary to define time cues within the flight hardware prior to flight. During flight if changes in the Circadian System (e.g., mean, phase angle, period) occur this would indicate that the gravity vector is important relative to biological timing. This presentation is concerned with the environmental parameter: to support rodent experiments in microgravity. The Animal Enclosure Module (AEM) provides solid food bars and water via lixits and ad libitum. Flight animals (Sprague-Dawley rats, 60 - 300g) when compared to ground controls show similar growth (mean growth per day g, plus or minus SD; flight 5.4 plus or minus 2.0, ground 5.9 plus or minus 2.1). Current AEMs use incandescent lighting (approx. 5 Lux). Light emitting diode (LED) arrays are being developed that provide a similar light environment as cool-white fluorescent sources (40 Lux). In ground based tests (12L:12D), these arrays show normal circadian entrainment (Tau = 24.0) with respect to the behavioral responses, measured (drinking, eating, gross locomotor activity). A newly developed ultra high efficiency filter system can entrap all feces, urine and odors from 6 rats for 24 days. Maximum sound level exposure limits (per octave band 22 Hz - 179 kHz) have been established. The AEM will effectively support animal experiments in microgravity.

Winget, C. M.↗

Silicon Carbide Technology

Silicon carbide based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be widely realized in commercially available SiC devices, primarily owing to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and the well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high-temperature and high-power SiC electronics are identified.

Neudeck, Philip G.↗

Mutiple Czochralski growth of silicon crystals from a single crucible

An apparatus for the Czochralski growth of silicon crystals is presented which is capable of producing multiple ingots from a single crucible. The growth chamber features a refillable crucible with a water-cooled, vacuum-tight isolation valve located between the pull chamber and the growth furnace tank which allows the melt crucible to always be at vacuum or low argon pressure when retrieving crystal or introducing recharge polysilicon feed stock. The grower can thus be recharged to obtain 100 kg of silicon crystal ingots from one crucible, and may accommodate crucibles up to 35 cm in diameter. Evaluation of the impurity contents and I-V characteristics of solar cells fabricated from seven ingots grown from two crucibles reveals a small but consistent decrease in cell efficiency from 10.4% to 9.6% from the first to the fourth ingot made in a single run, which is explained by impurity build-up in the residual melt. The crystal grower thus may offer economic benefits through the extension of crucible lifetime and the reduction of furnace downtime.

Lane, R. L.↗

Modular experimental platform for science and applications

A modularized, standardized spacecraft bus, known as MESA, suitable for a variety of science and applications missions is discussed. The basic bus consists of a simple structural arrangement housing attitude control, telemetry/command, electrical power, propulsion and thermal control subsystems. The general arrangement allows extensive subsystem adaptation to mission needs. Kits provide for the addition of tape recorders, increased power levels and propulsion growth. Both 3-axis and spin stabilized flight proven attitude control subsystems are available. The MESA bus can be launched on Ariane, as a secondary payload for low cost, or on the STS with a PAM-D or other suitable upper stage. Multi-spacecraft launches are possible with either booster. Launch vehicle integration is simple and cost-effective. The low cost of the MESA bus is achieved by the extensive utilization of existing subsystem design concepts and equipment, and efficient program management and test integration techniques.

Hill, A. S.↗

Instability of rectangular jets

The instability of rectangular jets is investigated using a vortex-sheet model. It is shown that such jets support four linearly independent families of instability waves. Within each family there are infinitely many modes. A way to classify these modes according to the characteristics of their mode shapes or eigenfunctions is proposed. It is demonstrated that the boundary element method can be used to calculate the dispersion relations and eigenfunctions of these instability wave modes. The method is robust and efficient. A parametric study of the instability wave characteristics has been carried out. A sample of the numerical results is reported here. It is found that the first and third modes of each instability wave family are corner modes. The pressure fluctuations associated with these instability waves are localized near the corners of the jet. The second mode, however, is a center mode with maximum fluctuations concentrated in the central portion of the jet flow. The center mode has the largest spatial growth rate. It is anticipated that as the instability waves propagate downstream the center mode would emerge as the dominant instability of the jet.

Tam, Christopher K. W.↗