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At least 811 records · Page 45

Electronic characteristics of 'real' CdS surfaces.

Photovoltage spectroscopy (including photovoltage inversion and photovoltage quenching) was used to determine the electronic characteristics of real (basal and prismatic) surfaces of CdS. In room atmosphere, surface states with the following positions were found in the cadmium surfaces: Ec - Et equal to 0.05, 0.4, and 0.8 eV, and Ev - Et equal to 0.83 eV. The same surface states were present in the sulfur surfaces, with the exception of those at Ec - Et equal to 0.4 eV. In the prismatic and unetched basal surfaces, states at Ec - Et equal to 1.1 eV were found in addition to all of those found on the cadmium surfaces.

Lagowski, J.↗

Angular dependence of electron impact excitation cross sections of O2.

Study of the electron-impact excitation spectrum of O2 at 20 and 45 eV impact energies and at scattering angles ranging from 10 to 90 deg. The angular behavior of the differential scattering cross sections for excitation of the a super 1 delta sub g, b super 1 sigma sub g (+), B super 3 sigma sub u (-) states for the 9.97-eV ('longest' band) and the 10.29-eV ('second' band) transitions, for the broad feature at 6.1 eV energy-loss, and for elastic scattering is determined. The experimentally measured relative differential and integral cross sections for these processes are approximately normalized to the absolute scale. The intensities of the different transitions in optical and electron-impact spectra are compared, and the importance of spin-orbit coupling and exchange processes is discussed. It is found that the energy-loss feature at 6.1 eV in the electron-impact spectrum is mostly due to the excitation of the c super 1 sigma sub u (-) state, and not the A super 3 sigma sub u (+) state, as had been previously thought.

Trajmar, S.↗

Preferential orientation of CO adsorption on Ni as determined by extended Hueckel calculations.

The adsorption of CO on the nickel surface has been calculated using a modified extended Hueckel technique for a number of different orientations of the CO with respect to the nickel surface. The calculations show that double site adsorption with the CO molecule normal to the surface and the carbon atom closest to the metal gives the most stable configuration (2.57 eV). The single site absorbs with an energy of 2.39 eV. However, other configurations also give fairly large bonding energies. The CO normal to the surface with oxygen closest to the metal gives a heat of adsorption of 0.37 eV. Two-center adsorption with the CO axis parallel to the surface and the molecule symmetrically placed between the nearest neighbors gives a chemisorption energy of 1.34 eV. These values compare with an experimental value of 1.98 eV.

Robertson, J. C.↗

Photoabsorption spectrum of UF6 by electron impact

The photoabsorption cross section of UF6 in the wavelength region between 206.7 nm (2.5 eV) and 43.5 nm (28.5 eV) has been derived from the UF6 electron energy loss spectra at a 5-deg scattering angle and at incident electron energies of 75 and 100 eV. The shape of the resulting optical spectrum agrees well with available high-resolution photoabsorption measurements in the 400 nm (3.1 eV) to 200 nm (6.3 eV) region. Below 200 nm, where no photoabsorption data are available, there is strong absorption and appreciable structure present. Absolute values of absorption cross sections have been obtained by normalizing the present relative data to the recently measured photoabsorption value at 225.5 nm.

Srivastava, S. K.↗

EPR and transient capacitance studies on electron-irradiated silicon solar cells

One and two ohm-cm solar cells irradiated with 1 MeV electrons at 30 C were studied using both EPR and transient capacitance techniques. In 2 ohm-cm cells, Si-G6 and Si-G15 EPR spectra and majority carrier trapping levels at (E sub V + 0.23) eV and (E sub V + 0.38) eV were observed, each of which corresponded to the divacancy and the carbon-oxygen-vacancy complex, respectively. In addition, a boron-associated defect with a minority carrier trapping level at (E sub C -0.27) eV was observed. In 1 ohm-cm cells, the G15 spectrum and majority carrier trap at (E sub V + 0.38) eV were absent and an isotropic EPR line appeared at g = 1.9988 (+ or - 0.0003); additionally, a majority carrier trapping center at (E sub V + 0.32) eV, was found which could be associated with impurity lithium. The formation mechanisms of these defects are discussed according to isochronal annealing data in electron-irradiated p-type silicon.

Lee, Y. H.↗

An analytical study of electric vehicle handling dynamics

Hypothetical electric vehicle configurations were studied by applying available analytical methods. Elementary linearized models were used in addition to a highly sophisticated vehicle dynamics computer simulation technique. Physical properties of specific EV's were defined for various battery and powertrain packaging approaches applied to a range of weight distribution and inertial properties which characterize a generic class of EV's. Computer simulations of structured maneuvers were performed for predicting handling qualities in the normal driving range and during various extreme conditions related to accident avoidance. Results indicate that an EV with forward weight bias will possess handling qualities superior to a comparable EV that is rear-heavy or equally balanced. The importance of properly matching tires, suspension systems, and brake system front/rear torque proportioning to a given EV configuration during the design stage is demonstrated.

Greene, J. E.↗

The performance and efficiency of four motor/controller/battery systems for the simpler electric vehicles

A test and analysis program performed on four complete propulsion systems for an urban electric vehicle (EV) is described and results given. A dc series motor and a permanent magnet (PM) motor were tested, each powered by an EV battery pack and controlled by (1) a series/parallel voltage-switching (V-switch) system; and (2) a system using a pulse width modulation, 400 Hz transistorized chopper. Dynamometer tests were first performed, followed by eV performance predictions and data correlating road tests. During dynamometer tests using chopper control; current, voltage, and power were measured on both the battery and motor sides of the chopper, using three types of instrumentation. Conventional dc instruments provided adequate accuracy for eV power and energy measurements, when used on the battery side of the controller. When using the chopper controller, the addition of a small choke inductor improved system efficiency in the lower duty cycle range (some 8% increase at 50% duty cycle) with both types of motors. Overall system efficiency rankings during road tests were: (1) series motor with V-switch; (2) PM motor with V-switch; (3) series motor with chopper; and (4) PM motor with chopper. Chopper control of the eV was smoother and required less driver skill than V-switch control.

Shipps, P. R.↗

Losses in chopper-controlled DC series motors

Motors for electric vehicle (EV) applications must have different features than dc motors designed for industrial applications. The EV motor application is characterized by the following requirements: (1) the need for highest possible efficiency from light load to overload, for maximum EV range, (2) large short time overload capability (The ratio of peak to average power varies from 5/1 in heavy city traffic to 3/1 in suburban driving situations) and (3) operation from power supply voltage levels of 84 to 144 volts (probably 120 volts maximum). A test facility utilizing a dc generator as a substitute for a battery pack was designed and utilized. Criteria for the design of such a facility are presented. Two motors, differing in design detail, commercially available for EV use were tested. Losses measured are discussed, as are waves forms and their harmonic content, the measurements of resistance and inductance, EV motor/chopper application criteria, and motor design considerations.

Hamilton, H. B.↗

Etching of diamond with argon and oxygen ion beams

The angular dependences of the sputter yield of (100) single crystal diamond under argon and oxygen ion beams were investigated. For argon ion beams a large increase in the sputter yield was observed as the angle of incidence was increased from the normal, with a maximum occurring at approximately 60 deg from the normal. The magnitude of the increase and the angle at which the maximum was observed were dependent on the ion energy and species. The shape of the yield versus angle of incidence curve indicated the presence of a highly damaged surface layer. Large deviations from this curve were observed where ion incidence was along channeling directions. Studies with oxygen ion beams showed almost no angular dependence for 500 eV ions while at an energy of 1000 eV the angular dependence was similar to that for argon ions. At normal incidence the yield for 500 eV oxygen ions was seven times larger than that for 500 eV argon ions. For 1000 eV oxygen and argon ions the corresponding ratio is only 2.5. Implications for mechanisms of inert and reactive ion etching are discussed. Application of the data to ion beam shaping of diamond tips for ultrahigh pressure research is discussed.

Whetten, T. J.↗

Ultrasoft X-ray Background Observations of the Local Interstellar Medium

Preliminary results from a May 8, 1984 sounding rocket survey of the soft X-ray background are presented. The X-ray detectors are sensitive to X-rays in three soft X-ray bandpasses: 80 to 110 eV, 90 to 188 eV, and 284 to 532 eV (at 20% of peak response). The lowest energy X-rays in this range have a mean free path of order 10 to the 19th power/sq cm and provide information about the local interstellar medium. The count rate in the 80 to 110 eV energy band (the Be band) tracks the 90 to 188 (eV band (the B band) very well, indicating that the same approx. 1 million degree gas that is responsible for the B band emission may be responsible for the bulk of the Be band X-rays as well.

Sanders, W. T.↗

Muon content of gamma ray induced EAS from Cygnus X-3

During 1984 the Leeds group (Lambert et al, OG 2,1-6) have observed emission above 5 times 10 to the 14th power eV in July, September and October at phi approximately 0.6. These observations were made with an array which included the Nottingham 10 sq m muon detector. A search for muons in events at the phase peak and off source has yielded the following results: (1) for 42 on source events we find an average muon density of 0.63 muons m(-2) at a mean core distance Bar R = 32 m and mean primary energy approximately 25 times 10 to the 15th power eV; (2) for 21 off source events average muon density = 1.6 m(-2), Bar R = 32 m with mean primary energy approximately 2.0 x 10 to the 15th power eV; (3) for 11 of the 42 on source events, zero muons were recorded in the 10 sq ms. For these events Bar R = 41 m and mean primary energy approximately 1.5 x 10 to the 15th power eV; (4) for 8 of the 21 off source events, zero muons were recorded in the 10 sq ms. For these events Bar R = 37 m and mean primary energy approximately 1.5 times 10 to the 15th power eV. For all the events the mean zenith angle was approximately 16 deg. A more detailed comparison of on source and further off source events will be presented.

Blake, P. R.↗

Arrival directions of large air showers, low-mu showers and old-age low-mu air showers observed at St. Chacaltaya

Arrival directions of air showers with primary energies in the range 10 to the 16.5 power eV to 10 to the 18th power eV show the first harmonic in right ascension (RA) with amplitude of 2.7 + or - 1.0% and phase of 13-16h. However, the second harmonic in RA slightly seen for showers in the range 10 to the 18th power eV to 10 to the 19th power eV disappeared by accumulation of observed showers. The distribution of arrival directions of low-mu air showers with primary energies around 10 to the 15th power eV observed at Chacaltaya from 1962 to 1967 is referred to, relating to the above-mentioned first harmonic. Also presented in this paper are arrival directions of old-age low-mu air showers observed at Chacaltaya from 1962 to 1967, for recent interest in gamma-ray air showers.

Kaneko, T.↗

Deep levels in as-grown and Si-implanted In(0.2)Ga(0.8)As-GaAs strained-layer superlattice optical guiding structures

Trap levels in about 2-micron In(0.2)Ga(0.8)As(94 A)/GaAs(25 A) strained-layer superlattices, suitable for optical waveguides, have been identified and characterized by deep-level transient spectroscopy and optical deep-level transient spectroscopy measurements. Several dominant electron and hole traps with concentrations of approximately 10 to the 14th/cu cm, and thermal ionization energies Delta-E(T) varying from 0.20 to 0.75 eV have been detected. Except for a 0.20-eV electron trap, which might be present in the In(0.2)Ga(0.8)As well regions, all the other traps have characteristics similar to those identified in molecular-beam epitaxial GaAs. Of these, a 0.42-eV hole trap is believed to originate from Cu impurities, and the others are probably related to native defects. Upon Si implantation and halogen lamp annealing, new deep centers are created. These are electron traps with Delta-E(T) = 0.81 eV and hole traps with Delta-E(T) = 0.46 eV. Traps occurring at room temperature may present limitations for optical devices.

Dhar, S.↗

On the electron affinity of the oxygen atom

The electron affinity of oxygen is computed to be 1.287 eV, at the full CI level using a 6s5p3d 2f Slater-type orbital basis and correlating only the 2p electrons. The best CASSCF-MRCI result including only 2p correlation is 1.263 eV. However, inclusion of 2s intrashell and 2s2p intershell coorelation increases the computed EA to 1.290 eV at the CASSCF-MRCI level. At the full CI basis set limit, the 2s contribution to the electron affinity is estimated to be as large as 0.1 eV. The higher excitation contribution to the electron affinity is found to increase substantially with basis set completeness, especially when the 2s electrons are correlated. Relativistic effects are shown to make a small (less than 0.01 eV) change in the EA.

Bauschlicher, C. W., Jr.↗

Windows on the axion

Peccei-Quinn symmetry with attendant axion is a most compelling, and perhaps the most minimal, extension of the standard model, as it provides a very elegant solution to the nagging strong CP-problem associated with the theta vacuum structure of QCD. However, particle physics gives little guidance as to the axion mass; a priori, the plausible values span the range: 10(-12)eV is approx. less than m(a) which is approx. less than 10(6)eV, some 18 orders-of-magnitude. Laboratory experiments have excluded masses greater than 10(4)eV, leaving unprobed some 16 orders-of-magnitude. Axions have a host of interesting astrophysical and cosmological effects, including, modifying the evolution of stars of all types (our sun, red giants, white dwarfs, and neutron stars), contributing significantly to the mass density of the Universe today, and producting detectable line radiation through the decays of relic axions. Consideration of these effects has probed 14 orders-of-magnitude in axion mass, and has left open only two windows for further exploration: 10(-6)eV is approx. less than m(a) is approx. less than 10(-3)eV and 1eV is approx. less than m(a) is approx. less than 5eV (hadronic axions only). Both these windows are accessible to experiment, and a variety of very interesting experiments, all of which involve heavenly axions, are being planned or are underway.

Turner, Michael S.↗

Activation energy and capture cross section of majority carrier traps in Zn doped InP

Schottky barrier diodes were fabricated on Zn doped InP Wafers. The diodes were radiation damaged with 2 MeV protons to a dose of 2 x 10(exp 12)cm(sup -2). The damage was analyzed by DLTS (deep level transient spectroscopy) using the double correlation technique. Capture cross sections were measured directly. Two major defects were observed in the DLTS spectra. The first defect, was H4 at Ev + 0.29 eV, with capture cross section 1.1 x 10(exp -17)cm(sup 2). The second defect, was H5 at Ev + 0.53 eV. Its capture cross section varied with temperature as described by the relationship sigma = sigma(sub 0) exp(delta(E)/kT) where sigma(sub 0) = 1.3 x 10(exp -19)cm(sup 2) and delta(E) = .08 eV. This relationship yields a sigma of 5.9 x 10(exp -21)cm(sup 2) at room temperature. The surprisingly small capture cross section of H5 and its temperature dependence are discussed in terms of the multiphonon emission process for carrier capture at the defect. The advantages of the improved experimental techniques used are also discussed.

Rybicki, George↗

InGaAs PV Device Development for TPV Power Systems

Indium gallium arsenide (InGaAs) photovoltaic devices have been fabricated with bandgaps ranging from 0.75 eV to 0.60 eV on Indium Phosphide (InP) substrates. Reported efficiencies have been as high as 11.2 percent (AMO) for the lattice matched 0.75 eV devices. The 0.75 eV cell demonstrated 14.8 percent efficiency under a 1500 K blackbody with a projected efficiency of 29.3 percent. The lattice mismatched devices (0.66 and 0.60 eV) demonstrated measured efficiencies of 8 percent and 6 percent respectively under similar conditions. Low long wavelength response and high dark currents are responsible for the poor performance of the mismatched devices. Temperature coefficients have been measured and are presented for all of the bandgaps tested.

Wilt, David M.↗

Fast Nitrogen Atoms from Dissociative Excitation of N2 by Electron Impact

The Doppler profiles of one of the fine structure lines of the N I (1200 A) g (sup 4)S(sup 0)-(sup 4)P multiplet and of the N II (1085 A) g (sup 3)p(sup O)-(sup 3)D multiplet have been measured. Excitation of the multiplets is produced by electron impact dissociative excitation of N2. The experimental line profiles are evaluated by fast Fourier transform (FFT) techniques and analysis of the profiles yields the kinetic energy distribution of fragments. The full width at half maximum (FWHM) of N I (1200 A) increases from 27+/-6 mA at 30 eV to 37+/-4 mA at 100 eV as the emission cross section of the dissociative ionization excitation process becomes more important relative to the dissociative excitation process. The FWHM of the N II (1085 A) line is 36+/-4 mA at 100 eV. For each multiplet the kinetic energy distribution function of each of the two fragment N atoms (ions) is much broader than thermal with a mean energy above 1.0 eV. The dissociation process with the largest cross section is predissociation and predominantly produces N atoms with kinetic energy distributions having mean energies above 0.5 eV. Dissociative processes can lead to a substantial escape flux of N I atoms from the satellites, Titan and Triton of the outer planets.

Ajello, Joseph M.↗