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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 811 records · Page 45
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Degradation mechanisms of 1.3 μm C-doped quantum dot lasers grown on native substrate

Here, the aim of this paper is to analyse the degradation modes of 1.3 μm InAs quantum dot laser diodes (QD LDs) grown by using carbon as a p-type dopant, as an alternative to beryllium. The devices were stressed at high current densities, to favor the onset of excited-state (ES) emission, and to study the related degradation phenomena. The study of QD LDs is of fundamental importance for the photonic integrated circuits (PICs). The investigation is based on two types of stress tests: 1) a current step stress and 2) a constant current stress. With these experiments we demonstrate that a) the current is a determining factor for the onset of the ES during the operation of such devices. b) the onset of ES is responsible for a rapid quenching of the ground state (GS) emission. c) stress induces a significant increase in the threshold current of the devices, that is ascribed to the lowering of the injection efficiency, which in turn can be explained by the easier escape of carriers from quantum dots (QDs) from ES energy levels. d) the contribution of defects on the optical and electrical degradation is also discussed.

42 ENGINEERING↗
DOE OSTI2020

High-Efficiency Silicon Heterojunction Solar Cells: Materials, Devices and Applications

Photovoltaic (PV) technology offers an economic and sustainable solution to the challenge of increasing energy demand in times of global warming. The world PV market is currently dominated by the homo-junction crystalline silicon (c-Si) PV technology based on high temperature diffused p-n junctions, featuring a low power conversion efficiency (PCE). Recent years have seen the successful development of Si heterojunction technologies, boosting the PCE of c-Si solar cells over 26%. This article reviews the development status of high-efficiency c-Si heterojunction solar cells, from the materials to devices, mainly including hydrogenated amorphous silicon (a-Si:H) based silicon heterojunction technology, polycrystalline silicon (poly-Si) based carrier selective passivating contact technology, metal compounds and organic materials based dopant-free passivating contact technology. The application of silicon heterojunction solar cells for ultra-high efficiency perovskite/c-Si and III-V/c-Si tandem devices is also reviewed. In the last, the perspective, challenge and potential solutions of silicon heterojunction solar cells, as well as the tandem solar cells are discussed.

14 SOLAR ENERGY↗
DOE OSTI2021

Tunable structural, morphological and optical properties of undoped, Mn, Ni and Ag-doped CuInS 2 thin films prepared by AACVD

The preparation of high-quality copper indium sulphide, CuInS 2 photo-absorber material with tunable properties for efficient, low-cost, thin film solar cells using scalable methods remains a challenge. In order to address this, high quality off-stoichiometric undoped and Mn, Ni and Ag-doped CuInS 2 (CIS) thin films have been deposited onto glass substrates by aerosol-assisted chemical vapour deposition (AACVD) using metal diethyldithiocarbamate precursors at temperatures of 350, 400 and 450 °C. Data from powder X-ray diffraction (p-XRD), Raman spectroscopy and scanning electron microscopy-energy dispersive X-ray spectroscopy (SEM-EDS) suggest a correlation of morphology and composition of tetragonal phase (chalcopyrite and copper-gold-type) sulphur-deficient microcrystalline CIS thin films. For undoped thin films, near-infrared optical absorption and emission with tunable band gap between 1.32 and 1.42 eV are likely associated with donor-acceptor pairs involving deep or shallow electronic states such as sulphur vacancies (V S •• ), indium-copper anti-sites (In Cu •• ) and indium interstitials (In i ••• ) as donors and copper vacancies (V Cu ') as acceptors. Whilst Mn-doped thin films exhibit minimal tunable properties, Ni and Ag-doped films exhibit tunable morphology, composition and near-infrared absorption for small dopant content. Here, though further studies are required to explore the defect chemistry, these results show the utility of AACVD in tuning structural, morphological and optical properties of undoped, Mn, Ni and Ag-doped CIS thin films.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Stabilizing Ni-rich layered cathode for high-voltage operation through hierarchically heterogeneous doping with concentration gradient

High-nickel LiNi x Mn y Co 1-x-y O 2 (NMC) cathodes have demonstrated superior energy density, yet their stability is compromised under high voltage conditions. To address this, here we propose a strategy of heterogeneous doping with a concentration gradient, specifically through Sr–Zr co-modification. We synthesized Ni-rich NMC particles featuring several micron-sized secondary particles composed of micron-sized primary grains. This design aims to harness the structural robustness of single-crystalline grains and the favorable diffusion kinetics of polycrystalline secondary particles. Systematic characterization using a combination of electrochemical measurements and synchrotron analytics reveals an intriguing pattern of hierarchically heterogeneous Sr–Zr co-doping. It demonstrates a depth-dependent concentration gradient at the secondary particle level and competing dopant segregation over the buried grain boundaries. This unique characteristic creates opportunities for enhancing battery performance, particularly by optimizing precursors and implementing advanced modulation techniques. We also investigate the dissolution and precipitation of the cathode's transition metal cations upon high-voltage cycling. These insights suggest that a tailored compositional variation can be a viable approach to effectively design the next-generation high-Ni NMC cathode materials for high-voltage lithium batteries.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Solid-state dewetting instability in thermally-stable nanocrystalline binary alloys

Practical applications of nanocrystalline metallic thin films are often limited by instabilities. Furthermore, in addition to grain growth, the thin film itself can become unstable and collapse into islands through solid-state dewetting. Additionally, selective alloying can improve nanocrystalline stability, but the impact of this approach on dewetting is not clear. In this study, two alloys that exhibit nanocrystalline thermal stability as ball milled powders are evaluated as thin films. While both alloys demonstrated dewetting behavior following annealing, the severity decreased in more dilute compositions. Ultimately, a balance may be struck between nanocrystalline stability and thin film structural stability by tuning dopant concentration.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Defect physics in 2D monolayer I-VII semiconductor AgI

As a brand new two-dimensional (2D) material with promising electronic properties, monolayer I-VII silver iodide (AgI) has the potential for future 2D electronic devices. To advance the development of such devices, the exploration of n-type and p-type conductivities of AgI is indispensable. With first-principles calculations, we systematically investigate the properties of intrinsic defects and extrinsic dopants in monolayer AgI, including atomic structural pictures, formation energies, and ionization energies to offer carriers. Considering the divergence in energies of charged defects in 2D materials when the traditional jellium scheme is used, we adopt an extrapolation approach to overcome the problem. The Ag vacancy (VAg) and Be substitution on Ag site (BeAg) are found to be the most promising p-type and n-type doping candidates, respectively. They could provide bound carriers for transport through the defect-bound band edge states, although the ionization energies are still larger than thermal energy at room temperature. Furthermore, negative-U behaviors are demonstrated in I vacancy (VI), Zn substitution on Ag site (ZnAg), and Cd substitution on Ag site (CdAg). The present work, for the first time, offers a detailed study of the defect physics in 2D I-VII monolayer semiconductor, laying the foundation for subsequent physics and device explorations based on these brand new 2D materials.

36 MATERIALS SCIENCE↗
DOE OSTI2021

The nanoscale distribution of copper and its influence on charge collection in CdTe solar cells

For decades, Cu has been the primary dopant in CdTe photovoltaic absorbers. Typically, Cu acceptor concentrations in these devices are on the order of 1 1014 cm-3, which has made it notoriously difficult to directly correlate nanoscale Cu distributions to the local charge transport properties of these devices. To measure and correlate these properties, measurement techniques require high sensitivity to elemental concentration, large penetration depth, and operando compatibility. Techniques such as secondary-ion mass spectroscopy and X-ray energy dispersive spectroscopy are widely adopted to measure Cu concentrations, but they are limited by penetration depth, sensitivity, or spatial resolution. Additionally, they lack the operando capabilities required to correlate one-to-one Cu concentrations to electrical performance. In this work, correlative X-ray microscopy is used to investigate the spatial distribution of Cu and its impact on charge collection through the depth and breadth of CdTe photovoltaic devices. Plan-view, nanoscale X-ray fluorescence maps clearly demonstrate the spatial segregation of copper around regions thought to be CdTe grain boundaries. Complementary cross-section imaging unveils the transition of the maximum charge-collection efficiency from the ZnTe-CdTe interface to the CdS-CdTe interface as a function of Cu incorporation. The copper concentration through the depth of the CdTe layer is characterized by slow and fast diffusion components, and cross-section charge-transport modeling shows that the experimentally obtained charge collection can be explained by the modeled acceptor distribution through the depth of the CdTe layer.

14 SOLAR ENERGY↗
DOE OSTI2021

Large-scale, precision xenon doping of liquid argon

The detection of scintillation light from liquid argon is an experimental technique key to a number of current and future nuclear/particle physics experiments, such as neutrino physics, neutrinoless double beta decay and dark matter searches. Additionally, although the idea of adding small quantities of xenon (doping) to enhance the light yield has attracted considerable interest, this technique has never been demonstrated at the necessary scale or precision. Here we report on xenon doping in a 100 l cryogenic vessel. Xenon doping was performed in four concentrations of 1.00 ± 0.06 ppm, 2.0 ± 0.1 ppm, 5.0 ± 0.3 ppm, and 10.0 ± 0.5 ppm. These measurements represent the most precise xenon doping measurements as of publishing. We observed an increase in average light yield by a factor of 1.92 ± 0.12(syst) ± 0.02(stat) at a dopant concentration of 10 ppm.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Understanding the enhancement of scintillation light in xenon-doped liquid argon

Measuring the scintillation light in noble gases is an important detection technique in particle physics. Numerous rare event searches like neutrino beam experiments, neutrino-less double beta-decay, and dark matter searches use argon-based detectors. In liquid argon, the light yield can be enhanced by the addition of a small quantity of xenon, where ~10–1000 ppm are added. The general enhancement mechanism and its pathway via an energy transfer between argon and xenon excimers is well known, however the importance of absorption of argon excimer emission by atomic xenon has not been fully appreciated. This absorption significantly reduces the light yield in commercially available argon (extracted from air) which contains trace amounts (~0.1 ppm) of xenon. The addition of a small xenon dopant of ~10 ppm recovers this lost light resulting in an increased light yield over un-doped argon of about a factor of two. Here, in this paper, we introduce a model for the light production in xenon doped argon, including absorption and re-emission, and compare it to the measured time dependence of light emission in xenon-doped argon.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

Synthesis and processing of lithium-loaded plastic scintillators on the kilogram scale

Plastic scintillators that can discriminate between gamma rays, fast neutrons, and thermal neutrons were synthesized and characterized while considering the performance at the kilogram scale. The synthesis and processing of these plastic scintillators on the kilogram scale required examination of several factors. The examination of these factors was necessitated by the inclusion of 0.1 wt.% lithium-6 to enable detection of thermal neutrons. First, methacrylic acid was used as an additive to solubilize salts of lithium-6, which allow for a thermal-neutron capture reaction that produces scintillation light following energy transfer. Second, a trade-off between scintillation performance and processability was considered because the increasing content of the methacrylic acid that aided processability resulted in a sharp decrease in the light output. The use of small amounts of methacrylic acid (≤3 wt.%) resulted in better performance but required high processing temperatures. At large scales, these high temperatures could initiate exothermic polymerization that results in premature curing and/or defects. Additionally, the deleterious effects of the methacrylic acid may be mitigated by using m-terphenyl as a primary dye rather than 2,5-diphenyloxazole (PPO), which has been traditionally used in organic scintillators. Finally, the curing environment was controlled to avoid defects like cracking and discolouration​ while maintaining solubility of dopants during curing. For scintillators that were produced from kilogram-scale batches of precursors, the effective attenuation of scintillation light was characterized.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Performance evaluation of pulse shape discrimination capable organic scintillators for space applications

Scintillators with pulse-shape discrimination (PSD) capability are of great interest to many fields in the scientific community. The ability to discern a gamma ray from a neutron using PSD varies between different types of scintillator materials and dopants. Here a new generation of organic scintillator materials with PSD capability were studied to determine their radiation hardness to neutron and gamma-ray radiation. The PSD capability, average pulse shapes, and light output of four types of organic scintillator were characterized before and after neutron and gamma-ray irradiation. The main goal of this investigation is to study the effects of long-term irradiation that may be experienced in space applications on the light output and particle discriminating capabilities of each material. EJ-270, EJ-276, organic glass, and Stilbene were tested. Damage due to neutron irradiation (displacement damage) was not observed in any of the scintillators up to 2.56 x 10 11 n/cm 2 , except for Stilbene which showed a small (12%) decrease in light output. All scintillators presented some light output reduction after gamma-ray irradiation (total ionizing dose), with reductions of 17% (EJ-276 and OGS), 32% (EJ-270), and 42% (Stilbene) observed immediately after 100 kRad.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

3D printed transparent ceramic YAG laser rods: Matching the core-clad refractive index

Yttrium Aluminum Garnet (YAG) solid state laser gain media rods with an active Neodymium-doped core and an optically-clear cladding region were additively manufactured via direct-ink-writing (DIW), followed by sintering and hot isostatic pressing to form fully dense optical ceramics. Lutetium and Gadolinium were chosen as optically-inert co-doping ions in the clad to match the increase in refractive index caused by the Neodymium in the core. Additionally, either 11.6% Lutetium or 3.8% Gadolinium can be used to match the index change from 2% neodymium; however, differences in diffusion distances across the core-clad interface lead to large fluctuations in index in that region. These index fluctuations can be minimized either by matching dopants with similar diffusion distances, or by implementing a gradual gradient in the doping profile, possible through DIW, rather than a sharp compositional interface attainable via more standard fabrication methods. This improvement in index homogeneity resulted in a 40% improvement in lasing performance compared with that of a core-clad rod fabricated with a sharp interface between the doped and undoped regions.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Optical properties of differing nanolayered structures of divalent europium doped barium fluoride thin films synthesized by pulsed laser deposition

Optically-active thin films are employed in a variety of applications, such as LEDs and photovoltaics, due to their ability to act as up- or down-photon energy converters. Their performance depends critically on their composition and structure; thus, the use of novel synthesis techniques that allow for their control at the nanoscale level can result in improved efficiency and practicality. Here, layered thin films consisting of Eu 2+ - doped BaF 2 nanocrystalline layers separated by amorphous Al 2 O 3 were synthesized via sequential pulsed laser deposition using three separate targets for the different components; this synthesis technique provides precise control of layer thickness at the nanoscale along with dopant distribution within the film. Cross-sectional transmission electron microscopy analysis verified the desired nano-layering. Post-deposition heat treatments in a nitrogen atmosphere resulted in samples exhibiting steady emission with a broad peak ranging from 400 to 600 nm and a shoulder at 410 nm. The CIE 1931 chromaticity coordinates are x = 0.26-0.29 and y = 0.32-0.35 and vary as a function of the sample configuration. Because the chromaticity coordinates are close to those of a pure white light (x = 0.33, y = 0.33), these films demonstrate advantageous properties for applications with UV-pumped white light LEDs.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Rare-earth-doped electrospun scheelite CaWO 4 nanofibers with excitation-dependent photoluminescence and high-linearity cathodoluminescence for ratiometric UV wavelength and radiation sensors

Scheelite structured AWO 4 compounds (A = Ba, Ca, Pb and Sr) are efficient hosts for rare-earth dopants. In this work, high-aspect-ratio AWO 4 (A = Ba, Ca, Pb and Sr) nanofibers, doped with 5 mol.% Tb and 5 mol.% Eu on A site, were synthesized using a sol-gel electrospinning technique, and their performances as a ratiometric sensor for the detection of UV light wavelength were comparatively studied. High-resolution electron microscopy reveals the presence of nanosized grains composing the nanofibers. The AWO 4 :5Tb-5Eu nanofibers exhibit strong characteristic photoluminescence (PL) and cathodoluminescence (CL) emission from both Tb 3+ and Eu 3+ ions. In the case of CaWO 4 lattice, the emission intensity ratio of Tb 3+ /Eu 3+ is found to show a linear relationship with the excitation wavelength in the tested range of 240–330 nm, with efficient energy transfer from host lattice to rare-earth ions. However, a similar result is not observed in other scheelite structured BaWO 4 , PbWO 4 , and SrWO 4 nanofibers. Here, the unique PL emission characteristics of CaWO 4 :5Tb-5Eu under different UV excitation wavelengths are due to its unique excitation band. This study reveals a potential new application of CaWO 4 :5Tb-5Eu as a fluorescent probe for UV wavelength detection. Additionally, the CL intensities from CaWO 4 :5Tb-5Eu nanofibers exhibit highly linear dependences on the applied voltage and current without saturation, which can be utilized for radiation detection.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Radiation hard gallium oxide scintillators for high count rate radiation detection

Despite decades of materials research, the availability of appropriate crystalline radiation-hard scintillators with ultrafast decay times (~10ns) and high light yields (>2000 ph/MeV) are still limited. In this study, we demonstrate the potential of gallium oxide (β-Ga 2 O 3 ) based scintillators for high count rate applications. The low-cost rugged β-Ga 2 O 3 scintillators were grown using the optical float zone (FZ) technique. Several dopants and growth atmospheres were used to demonstrate the balance between ultrafast primary decay time and the light yield of the scintillators. Light yields as high as 6446 ± 716 ph/MeV were obtained with 18.3 ns decay time for 662 keV gamma rays. Decay times as fast as 12ns were obtained with a 3212 ± 357 ph/MeV light yield. An excellent 662 keV gamma energy resolution of 7% was obtained using the β-Ga 2 O 3 :Ce crystals. Even with these excellent scintillation properties, the gamma radiation hardness of β-Ga 2 O 3 crystals was better than the leading radiation-hard lead tungstate (PbWO 4 ) crystals. Twenty-six scintillators fabricated from the grown β-Ga 2 O 3 crystals were tested for radiation hardness with a 60 Co gamma irradiation rate of 14 krad/h with a total radiation dose of 2 Mrad. The scintillation properties of these crystals remained unaffected. To date, no other scintillator has demonstrated such high radiation resistance. Furthermore, these FZ-grown low-cost, non-hygroscopic, and high-density β-Ga 2 O 3 scintillators can replace the existing scintillators in many applications ranging from nuclear and high energy physics experiments to nuclear security.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2021

A surface acoustic wave hydrogen sensor with tin doped indium oxide layers for intermediate temperatures

We report high temperature surface acoustic wave (SAW) gas sensors with conducting sensing layers require tuning of the sheet conductivity for optimal response. Conducting metal oxides are attractive sensing materials for their tunable electronic properties and high thermal stability, amongst others. Here, we have investigated the application of indium oxide (IO) and indium tin oxide (ITO) films on langasite (LGS)-based SAW reflective delay line sensor devices for monitoring hydrogen at 350 °C. Specifically, we modeled the effect of the IO and ITO sensing layer thickness on the wave velocity, attenuation, and effective electromechanical coefficient. This was followed by an experimental demonstration of tuning of the ITO film sheet conductivity by controlling the dopant concentration and yielding an improvement in the sensor sensitivity. The current study provides a pathway towards the development of conductivity-based sensing layers for high temperature SAW gas sensors with improved sensitivity.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

In-situ synthesized N-doped ZnO for enhanced CO 2 sensing: Experiments and DFT calculations

Chemiresistive CO 2 sensing is attractive due to low cost and ease of chip-level integration. Our previous studies (Yong Xia, 2021) showed the well-developed ZnO material fabricated by in-situ annealing exhibited good CO 2 sensing performance. Here, we have expanded on those studies, including CO 2 cyclic tests under both dry air and N 2 background whereby a much higher response to CO 2 in N 2 background was observed. In this study, detailed density functional theory calculations were conducted to understand the behavior. The results indicated nitrogen doping is mainly responsible for the observed response. In the presence of pre-adsorbed O 2 , N-doped ZnO can no longer interact with CO 2 , which agrees well with the observation of higher response in N 2 background. Furthermore, density of states analysis showed N sp 2 hybridized orbital and N 2p orbital of the N dopant mixed with sp 2 hybridized orbital of C atom and 2p orbitals of C/O atoms in CO 2 to form σ and π bonds, respectively. However, they mixed with O 2s/2p orbitals of O atom in O 2 when pre-adsorbed O 2 was present, hindering CO 2 interaction with N-doped ZnO, and resulting in limited response in air. The illustrated mechanism does not only further the understanding of metal oxide-based CO 2 sensing, but also guide the design of new functional materials for CO 2 sensing or capture.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Development of arsenic doped Cd(Se,Te) absorbers by MOCVD for thin film solar cells

Recent developments in CdTe solar cell technology have included the incorporation of ternary alloy Cd(Se,Te) in the devices. CdTe absorber band gap grading due to Se alloying contributes to current density enhancement and can result in device performance improvement. Here we report Cd(Se,Te) polycrystalline thin films grown by a chamberless inline atmospheric pressure metal organic chemical vapour deposition technique, with subsequent incorporation in CdTe solar cells. The compositional dependence of the crystal structure and optical properties of Cd(Se,Te) are examined. Selenium graded Cd(Se,Te)/CdTe absorber structure in devices are demonstrated using either a single CdSe layer or CdSe/Cd(Se,Te) bilayer (with or without As doping in the Cd(Se,Te) layer). Cross-sectional TEM/EDS, photoluminescence spectra and secondary ion mass spectroscopy analysis confirmed the formation of a graded Se profile toward the back contact with a diffusion length of ~1.5 um and revealed back-diffusion of Group V (As) dopants from the CdTe layer into Cd(Se,Te) grains. Due to the strong Se/Te interdiffusion, CdSe in the Se bilayer configuration was unable to form an n-type emitter layer in processed devices. In situ As doping of the Cd(Se,Te) layer benefited the device junction quality with current density reaching 28.3 mA/cm 2 . The results provide useful insights for the optimisation of Cd(Se,Te)/CdTe solar cells.

14 SOLAR ENERGY↗