Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Device”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 811 records · Page 45
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Unveiling the influence of selective-area-regrowth interfaces on local electronic properties of GaN p-n junctions for efficient power devices

Here, we report correlated nanoscale mapping of the structure, composition, and properties of regrown GaN p-n junctions to identify how etching and non-planar regrowth processes limit diode performance via the introduction of unintentional dopants and defect states. p-GaN was selectively regrown in n-GaN trenches with SiO 2 masks of variable mask-to-trench-width ratio. Dilute Al layers were periodically introduced during regrowth as markers of the growth interface. Correlated nanoscale mapping of doping, conductivity, and dopant complexes was achieved with atom probe tomography (APT), scanning spreading resistance microscopy (SSRM), and cathodoluminescence (CL) spectroscopy, respectively. The Al marker layers, detected by APT, enabled reconstruction of the faceted growth interface and correlation of the dopant concentration with position and time. The p-GaN growth rate is proportional to the mask-to-trench width ratio while the dopant incorporation rate is invariant. At trench edges, magnesium incorporation is suppressed, and oxygen incorporation enhanced, due to preferential incorporation on the semi-polar growth surface, leading to compensation and less abrupt p-n junctions; the SiO 2 mask is a source of oxygen. Residual etch damage below the regrowth interface induces n-type and p-type conductivity, creating leakage pathways. The non-uniform Mg incorporation is driven by crystal anisotropy and is thus inherent to non-planar regrowth, but can be mitigated by engineering the regrowth interface and process parameters. The unprecedented integration of spatially resolved mapping of dopants, impurities, conductivity, and carrier type is a powerful approach to discriminating distinct factors that limit the performance of regrown diodes, enabling the rational optimization of process and device design.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Photon counting with intensified charge coupled device (ICCD) – II. Laser induced breakdown spectroscopy (LIBS) spectral measurement

This study explores the application of photon counting (PC) to enhance the resolution of spectra acquired by an intensified charge-coupled device (ICCD) detector, with a focus on analytical atomic emission spectrometry using laser-induced breakdown spectroscopy (LIBS) as a use-case example. It demonstrates that, for spectra obtained with the same spectrometer–ICCD system, PC provides higher spectral resolution compared to conventional analog detector readout. This enhancement is particularly evident in the line wings of spectral peaks, facilitating better discrimination of isotopic peaks in the measured spectra. Although PC does not improve the resolution of an optical spectrometer directly, it rectifies the resolution lost caused by signal spreading in conventional ICCD analog measurement. However, similar to other counting techniques, excessive photons compromise detector linearity due to signal pileup. A correction model is proposed to mitigate the pileup effect, resulting in improved linearity and dynamic range in PC measurements. Additionally, the study reveals unexpected periodic structures in the flatfield image of the ICCD, which cause non-uniform detector gain in conventional analog as well as PC measurement modes and must be addressed for high-precision measurements.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

Acoustic focusing of microplastics in microfabricated and steel tube devices: An experimental study on the effects from particle size and medium density

The contamination of aquatic systems with microplastics is becoming a severe threat to living organisms. Microplastics found in the environment consist of a wide range of particle sizes thus give rise to several challenges to current purification methods. Acoustic focusing has been utilized as a particle concentrating method in biological and non-biological applications. In this study, we investigate the feasibility of using acoustic focusing technology to isolate microplastics in aqueous samples and find that a two-stage mechanism is essential to concentrate microplastics of wide size ranges of the same material. We demonstrate for the first time experimentally that when the particle size is comparable to the resonance wavelength, they deviate from typical pressure nodal focusing and show pressure antinodal focusing. Further, we have expanded microplastics isolation beyond microfluidic systems and demonstrate their extraction capabilities relatively at higher flow rates using microplastics of polystyrene, polyethylene, and polymethyl methacrylate ranging from 6 µm to 300 µm diameter and in devices fabricated with cylindrical steel tubes. We could extract 70% of microplastics smaller than 180 µm and 82% of microplastics greater than 180 µm in diameter from an aqueous sample at a flow rate of 12 mL/min. In conclusion, we demonstrate that small microplastics focus on acoustic pressure nodes regardless of the medium density. However, focusing of large microplastics of the same material depends on the medium density.

42 ENGINEERING↗
DOE OSTI2023

Lighting and visual comfort performance of commercially available tubular daylight devices

Tubular daylight devices (TDDs) require a much smaller roof opening than conventional skylights and, because of their highly reflective tube, they can deliver daylight farther away from the building envelope. This can provide lighting energy savings, increasing resilience in new and existing buildings. Different types and configurations are available amongst commercially available TDDs, including domes/diffusers with varying optical properties and the diameter of the TDD. This paper presents a comprehensive experimental evaluation of the lighting and visual comfort performance of multiple configurations of commercially available TDDs, varying dome type (prismatic and clear), diffuser type (Fresnel and prismatic), and diameter (53 and 35 cm), under a range of environmental conditions (different times of day/year, sky cover). Based on illuminance measurements, estimated lighting energy use is also presented. Results indicate that, for clear sky, light levels increase and energy use decreases with solar altitude (e.g., 16 Wh/m 2 daily energy use intensity on a high maximum daily solar altitude (MDSA) day and 34 Wh/m 2 on a low MDSA day) and TDD diameter (e.g., 34 Wh/m 2 and 69 Wh/m 2 for 53 cm and 35 cm TDDs, respectively, for low MDSA). The daily illuminance profile is more rounded for prismatic domes and has higher peaks for clear domes; this translates into a somewhat higher average daily useful daylight illuminance (DUDI) for prismatic domes (86 %) when compared to clear domes (80 %). No clear impact of diffuser type was apparent. In conclusion, measurements indicated no discomfort glare for any of the conditions tested.

14 SOLAR ENERGY↗
DOE OSTI2021

Targeted Writing and Deleting of Magnetic Skyrmions in Two-Terminal Nanowire Devices

Controllable writing and deleting of nanoscale magnetic skyrmions are key requirements for their use as information carriers for next-generation memory and computing technologies. While several schemes have been proposed, they require complex fabrication techniques or precisely tailored electrical inputs, which limits their long-term scalability. In this work, we demonstrate an alternative approach for writing and deleting skyrmions using conventional electrical pulses within a simple, two-terminal wire geometry. X-ray microscopy experiments and micromagnetic simulations establish the observed skyrmion creation and annihilation as arising from Joule heating and Oersted field effects of the current pulses, respectively. The unique characteristics of these writing and deleting schemes, such as spatial and temporal selectivity, together with the simplicity of the two-terminal device architecture, provide a flexible and scalable route to the viable applications of skyrmions.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2022

Electron Doping-Induced Metal–Insulator Transition in LaNiO 3 and Memory Devices

LaNiO 3 (LNO) is the only rare-earth nickelate that does not undergo a temperature-driven insulator-metal transition. Here, we report the successful deposition of epitaxial LNO thin films on LaAlO 3 substrates by a chemical solution deposition method. We report a metal-insulator transition driven by electron doping from hydrogen using catalytic Pd electrodes. A series of in-plane devices with LNO thin films and Pd-Au as the two working terminals were designed and fabricated by photolithography. Further, we report their resistance switching behavior and synaptic multiresistance states under voltage pulses. The results demonstrate the universality of electron doping-driven phase transitions in the rare-earth nickelates and their relevance to emerging memory and computing technologies.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Gaussian-preserved, non-volatile shape morphing in three-dimensional microstructures for dual-functional electronic devices

Motile plant structures such as Mimosa pudica leaves, Impatiens glandulifera seedpods, and Dionaea muscipula leaves exhibit fast nastic movements in a few seconds or less. This motion is stimuli-independent mechanical movement following theorema egregium rules. Artificial analogs of tropistic motion in plants are exemplified by shape-morphing systems, which are characterized by high functional robustness and resilience for creating 3D structures. However, all shape-morphing systems developed so far rely exclusively on continuous external stimuli and result in slow response. Here, we report a Gaussian-preserved shape-morphing system to realize ultrafast shape morphing and non-volatile reconfiguration. Relying on the Gaussian-preserved rules, the transformation can be triggered by mechanical or thermal stimuli within a microsecond. Moreover, as localized energy minima are encountered during shape morphing, non-volatile configuration is preserved by geometrically enhanced rigidity. Using this system, we demonstrate a suite of electronic devices that are reconfigurable, and therefore, expand functional diversification.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Triple ionic–electronic conducting oxides for next-generation electrochemical devices

Triple ionic–electronic conductors (TIECs) are materials that can simultaneously transport electronic species alongside two ionic species. The recent emergence of TIECs provides intriguing opportunities to maximize performance in a variety of electrochemical devices, including fuel cells, membrane reactors and electrolysis cells. However, the potential application of these nascent materials is limited by lack of fundamental knowledge of their transport properties and electrocatalytic activity. The goal of this Review is to summarize and analyse the current understanding of TIEC transport and electrochemistry in single-phase materials, including defect formation and conduction mechanisms. In this work, we particularly focus on the discovery criteria (for example, crystal structure and ion electronegativity), design principles (for example, cation and anion substitution chemistry) and operating conditions (for example, atmosphere) of materials that enable deliberate tuning of the conductivity of each charge carrier. Lastly, we identify important areas for further advances, including higher chemical stability, lower operating temperatures and discovery of n-type TIEC materials.

25 ENERGY STORAGE↗
DOE OSTI2023

An organic device with volatility on demand

We report ion trapping in crystalline domains of electrochemical transistors can be used to create a device capable of both volatile and non-volatile operation.

36 MATERIALS SCIENCE↗
DOE OSTI2021

High frequency impedance characteristics of a tunable microplasma device

Computational studies on high frequency impedance characteristics of a microplasma device are reported. While microplasma is ignited using a primary excitation signal, frequency response of plasma impedance is determined by a secondary high frequency probe signal with significantly lower voltage amplitude such that it does not influence the plasma parameters. Here, the computational model utilizing the drift–diffusion approximation is first validated by comparing with experimental data for microplasmas ignited at pressures ranging from 1 to 5 Torr. In spite of quantitative discrepancies, good overall agreement is obtained between the measured frequency response of impedance of the discharge. Comparisons are also presented for various plasma parameters including mean electron number density, sheath thickness, mean electron temperature, and collision frequency that were inferred from the impedance measurements. The computational model is then used to perform simulations of near-atmospheric pressure microplasmas with the probe signal frequency ranging from 3 to 20 GHz. The simulations demonstrate the presence of a resonance frequency at which the impedance vanishes. More importantly, it is shown that this resonant frequency can be tuned effectively by suitably modifying the operating parameters (gap size, pressure, and excitation voltage). The simulated impedance characteristics are used to determine the effective plasma inductance and capacitance using a non-linear fitting approach, thereby showing the dependence of these electrical parameters on the plasma operating conditions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Ab initio simulations of metal contacts for graphene-based devices

The precise atomic structure of a metal contact significantly affects the performance of nanoscale electronic devices. We use an accurate, DFT-based non-equilibrium Green’s function method to evaluate various metal contacts with graphene or graphene nanoribbons. Furthermore, for surface metal contacts not chemically bound to graphene, Ti contacts have lower resistance than those of Au, Ca, Ir, Pt, and Sr. However, as an edge contact, Ti has larger resistance than Au. Bridging O atoms at Ti and Au edge contacts lowers the transmission by over 30%.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Thomson scattering on the large plasma device

We have developed a non-collective Thomson scattering diagnostic for measurements of electron density and temperature on the Large Plasma Device. A triple grating spectrometer with a tunable notch filter is used to discriminate the faint scattering signal from the stray light. In this paper, we describe the diagnostic and its calibration via Raman scattering and present the first measurements performed with the fully commissioned system. Depending on the discharge conditions, the measured densities and temperatures range from 4.0 × 10 12 to 2.8 × 10 13 cm -3 and from 1.2 to 6.8 eV, respectively. The variation of the measurement error with plasma parameters and discharges averaged is also discussed.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

Solving the Hele–Shaw flow using the Harrow–Hassidim–Lloyd algorithm on superconducting devices: A study of efficiency and challenges

The development of quantum processors for practical fluid flow problems is a promising yet distant goal. Recent advances in quantum linear solvers have highlighted their potential for classical fluid dynamics. In this study, we evaluate the Harrow–Hassidim–Lloyd (HHL) quantum linear systems algorithm (QLSA) for solving the idealized Hele–Shaw flow. Our focus is on the accuracy and computational cost of the HHL solver, which we find to be sensitive to the condition number, scaling exponentially with problem size. This emphasizes the need for preconditioning to enhance the practical use of QLSAs in fluid flow applications. Moreover, we perform shots-based simulations on quantum simulators and test the HHL solver on superconducting quantum devices, where noise, large circuit depths, and gate errors limit performance. Error suppression and mitigation techniques improve accuracy, suggesting that such fluid flow problems can benchmark noise mitigation efforts. Finally, our findings provide a foundation for future, more complex application of QLSAs in fluid flow simulations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Analog-to-digital converter based on voltage-controlled superconducting devices

The increasing demand for cryogenic electronics in superconducting and quantum computing systems calls for ultra-energy-efficient data conversion architectures that remain functional at deep cryogenic temperatures. Here, in this work, we present the first design of a voltage-controlled superconducting flash analog-to-digital converter (ADC) based on a voltage-controlled quantum-enhanced Josephson junction field-effect transistor (JJFET). Exploiting its strong gate tunability and transistor-like behavior, the JJFET offers a scalable alternative to conventional current-controlled superconducting devices while aligning naturally with CMOS-style design methodologies. Building on our previously developed Verilog-A compact model calibrated to experimental data, we design and simulate a three-bit JJFET-based flash ADC targeted for integration within cryogenic control and readout circuitry in quantum computing. The core comparator block is realized through careful bias current selection and augmented with a three-terminal nanocryotron to precisely define reference voltages. Cascaded JJFET comparators ensure robust voltage gain, cascadability, and logic-level restoration across stages. Simulation results demonstrate accurate quantization behavior with ultra-low power dissipation, underscoring the feasibility of voltage-driven superconducting mixed-signal circuits. This work establishes a critical step toward unifying superconducting logic and data conversion, paving the way for scalable cryogenic architectures in quantum–classical co-processors, low-power artificial intelligence accelerators, and next-generation energy-constrained computing platforms.

Analog-to-digital converter↗
DOE OSTI2022

Tuning of strong nonlinearity in radio-frequency superconducting-quantum-interference-device meta-atoms

Strong nonlinearity of a self-resonant radio-frequency (rf) superconducting-quantum-interference-device (SQUID) meta-atom is explored via intermodulation (IM) measurements. Previous work in zero dc magnetic flux showed a sharp onset of IM response as the frequency sweeps through the resonance. A second onset at higher frequency was also observed, creating a prominent gap in the IM response. By extending those measurements to nonzero dc flux, different dynamics are revealed, including dc flux tunability of the aforementioned gaps and enhanced IM response near geometric resonance of the rf SQUID. These features observed experimentally are understood and analyzed theoretically through a combination of a steady-state analytical modeling and a full numerical treatment of the rf SQUID dynamics. The latter in addition predicts the presence of chaos in narrow parameter regimes. Here, the understanding of intermodulation in rf SQUID metamaterials is important for producing low-noise amplification of microwave signals and tunable filters.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

High-Bandwidth Low-Inductance Current Shunt for Wide-Bandgap Devices Dynamic Characterization

High bandwidth sensors are required to measure the wide-bandgap devices' transient behavior because of their fast switching speed. In addition to high bandwidth, the current sensor must introduce little extra parasitic inductance to the switching power loop. The analysis of conventional shunt resistors shows the key to high bandwidth is the coaxial structure and its parasitic inductance is proportional to its transient heat energy rating. Additionally, by combining the structure of coaxial shunt resistor and alumina substrate surface mount thin film resistors, a novel surface mount coaxial shunt resistor is introduced. Experimental measurement verifies its capability of achieving very high bandwidth while introducing very low parasitic inductance. The design can achieve up to 2.23-GHz measurement bandwidth while keeping its parasitic inductance as low as 0.12 nH. Application in gallium nitride heterojunction-field-effect-transistors double pulse test shows it can faithfully capture the transient current waveform while introducing little interference to the switching behavior.

42 ENGINEERING↗
DOE OSTI2021

The Exascale Framework for High Fidelity coupled Simulations (EFFIS): Enabling whole device modeling in fusion science

We present the Exascale Framework for High Fidelity coupled Simulations (EFFIS), a workflow and code coupling framework developed as part of the Whole Device Modeling Application (WDMApp) in the Exascale Computing Project. EFFIS consists of a library, command line utilities, and a collection of run-time daemons. Together, these software products enable users to easily compose and execute workflows that include: strong or weak coupling, in situ (or offline) analysis/visualization/monitoring, command-and-control actions, remote dashboard integration, and more. We describe WDMApp physics coupling cases and computer science requirements that motivate the design of the EFFIS framework. Furthermore, we explain the essential enabling technology that EFFIS leverages: ADIOS for performant data movement, PerfStubs/TAU for performance monitoring, and an advanced COUPLER for transforming coupling data from its native format to the representation needed by another application. Finally, we demonstrate EFFIS using coupled multi-simulation WDMApp workflows and exemplify how the framework supports the project’s needs. We show that EFFIS and its associated services for data movement, visualization, and performance collection does not introduce appreciable overhead to the WDMApp workflow and that the resource-dominant application’s idle time while waiting for data is minimal.

97 MATHEMATICS AND COMPUTING↗