Factors in designing printed circuits for space
Guide for designing printed circuits and circuit boards
HANDBOOK↗
SEARCH · Engineering Papers
Results for “Circuits”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Synthesis of current-switching circuits with cell matching using p-n-p and n-p-n transistors
Logical circuit for analysis of switching circuits with cell matching using p-n-p and n-p-n transistors
TRANSISTOR↗
Modeling from Local to Subsystem Level Effects in Analog and Digital Circuits Due to Space Induced Single Event Transients
Single Event Transients in analog and digital electronics from space generated high energetic nuclear particles can disrupt either temporarily and sometimes permanently the functionality and performance of electronics in space vehicles. This work first provides some insights into the modeling of SET in electronic circuits that can be used in SPICE-like simulators. The work is then directed to present methodologies, one of which was developed by this author, for the assessment of SET at different levels of integration in electronics, from the circuit level to the subsystem level.
State Transistion Model.↗
Venus Surface Environmental Chamber Test of SiC JFET-R Multi-Chip Circuit Board
This poster describes a first attempt to demonstrate a multi-chip prototype lander control and sensor signal digitization electronics circuit board comprised of ten NASA Glenn IC Generation 11 SiC JFET-R IC chips in 460 °C, 9.4 MPa harsh Venus surface conditions. The lander circuit ceased electrical operation prematurely at 107 °C as the Venus chamber heated up. Optical and SEM post-test inspections indicate fatal dielectric cracks occurred on only one of the ten SiC chips.
silicon carbide↗
Design and Simulation of Greatly Improved Future Generation 4H-SiC JFET-R Integrated Circuits for Prolonged 500 °C Operation
This work compares design layouts and circuit simulations of the next two prototype NASA Glenn SiC JFET-R IC fabrication runs designated “IC Gen. 12” and “IC Gen. 13”. Even though both generations employ the same physical JFET gate length and chip size, SPICE simulations predict drastic improvements to IC capabilities and performance metrics for Gen. 13 over Gen. 12. The main factors behind simulated performance differences are thinner n-channel layer leading to reduced operating voltages and switch to stepper-based photolithography that enables roughly 4-fold layout area reductions for functionally identical circuit blocks.
Silicon Carbide↗
Developing 300°C Ceramic Circuit Boards
This paper covers the development of a geothermal ceramic circuit board technology using 3D traces in a machinable ceramic. Test results showing the circuit board to be operational to at least 550°C. Discussion on producing this type of board is outlined along with areas needing improvement.
15 GEOTHERMAL ENERGY↗
NREL/NASA Internal Short-Circuit Instigator in Lithium Ion Cells
Lithium-ion cells provide the highest specific energy (>280 Wh/kg) and energy density (>600 Wh/L) rechargeable battery building block to date with the longest life. Electrode/electrolyte thermal instability and flammability of the electrolyte of Li-ion cells make them prone to catastrophic thermal runaway under some rare internal short circuit conditions. Despite extensive QC/QA, standardized industry safety testing, and over 18 years of manufacturing experience, major recalls have taken place and incidents still occur. Many safety incidents that take place in the field originate due to an internal short that was not detectable or predictable at the point of manufacture. The Internal Short-Circuit Instigator can be used to study types of separators, non-flammable electrolytes, electrolyte additives, fusible tabs, propagation studies, and gas generation within a cell.
30 DIRECT ENERGY CONVERSION↗
Relay Protection and Automation Systems Based on Programmable Logic Integrated Circuits
One of the most promising forms of developing the apparatus part of relay protection and automation devices is considered. The advantages of choosing programmable logic integrated circuits to obtain adaptive technological algorithms in power system protection and control systems are pointed out. The technical difficulties in the problems which today stand in the way of using relay protection and automation systems are indicated and a new technology for solving these problems is presented. Particular attention is devoted to the possibility of reconfiguring the logic of these devices, using programmable logic integrated circuits.
42 ENGINEERING↗
Designing low power and high contrast ratio all-optical NOT logic gate for using in optical integrated circuits
In this paper, a new design of all-optical NOT logic gate is proposed. In this structure, a photonic crystal nano-resonator and three waveguides are used. The nano-resonator is formed by removing two dielectric rods. The contrast ratio for the proposed NOT logic gate is 20.75 dB. The maximum response time and the rate of sending information equal to 0.466 ps and 2.145 Tbit/s, respectively. In addition, very low power consumption, small size, and simple design are the main features of this logic gate. These features allow the designed structure to be used in all-optical switches. To accomplish this, two types of logic gates placement alongside each other in the optical integrated circuits are proposed and investigated. In both types, the logic gates are tested for single use and simultaneous use, and the accuracy of the performance and effect of each on the other is measured. The results clearly show that the two logic gates, along with each other, have acceptable performance and can easily be used in the optical integrated circuit.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Design of a readout circuit incorporating a 12-bit analog-to-digital converter for cooled infrared focal plane array
The infrared focal plane array (IRFPA) is gradually becoming more systematic. In order to enhance the signal processing capabilities, analog-to-digital converters (ADC) integrated into the readout integrated circuit (ROIC) is an important development trend. However, the cryogenic effects of MOSFET devices will affect the conversion accuracy of the ADC at 77 K. In this paper, the main parameters of MOSFET are extracted at 77 K in 0.18 μm CMOS process, and a cryogenic model is established. Based on this, a digital ROIC is designed, which integrates a 12-bit single-slope integral ADC in pixel unit. By applying continuous integral ramp generator and mixed-voltage comparator, a high-linearity and low-power consumption single-slope ADC is realized for the cooled readout circuit. The measured dynamic effective number of bits of the ADC at 77 K is 10.92 bits, the static no-missing code resolution reaches 11.99 bits, the maximum differential nonlinear |DNL| < 1LSB and maximum integral nonlinear |INL| < 1LSB. This paper realizes the design of a digital ROIC for IRFPA and improves the simulation accuracy at 77 K.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Numerical approach of the quantum circuit theory
In this paper we develop a numerical method based on the quantum circuit theory to approach the coherent electronic transport in a network of quantum dots connected with arbitrary topology. The algorithm was employed in a circuit formed by quantum dots connected each other in a shape of a linear chain (associations in series), and of a ring (associations in series, and in parallel). For both systems we compute two current observables: conductance and shot noise power. We find an excellent agreement between our numerical results and the ones found in the literature. Moreover, we analyze the algorithm efficiency for a chain of quantum dots, where the mean processing time exhibits a linear dependence with the number of quantum dots in the array.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Evaluation of gold and silver leaching from printed circuit board of cellphones
Highlights: • Printed circuit boards (PCB) of mobile phones have large amounts of metals with high economic value such as gold and silver. • Dissolution of gold was done with a cyanide-based reagent and silver with nitric acid. • Leaching of PCB with Na{sub 2}S{sub 2}O{sub 3} and (NH{sub 4}){sub 2}S{sub 2}O{sub 3} to examine the feasibility of using these reagents was done. - Abstract: Electronic waste has been increasing proportionally with the technology. So, nowadays, it is necessary to consider the useful life, recycling, and final disposal of these equipment. Metals, such as Au, Ag, Cu, Sn and Ni can be found in the printed circuit boards (PCB). According to this, the aims of this work is to characterize the PCBs of mobile phones with aqua regia; obtaining “reference” values of leaching, to gold and silver, with cyanide and nitric acid, respectively; and study the process of leaching of these metals in alternative leaching with sodium thiosulfate and ammonium thiosulfate. The metals were characterized by digesting the sample with aqua regia for 1 and 2 h at 60 °C and 80 °C. The leaching of Au with a commercial reagent (cyanide) and the Ag with HNO{sub 3}were made. The leaching of Au and Ag with alternative reagents: Na{sub 2}S{sub 2}O{sub 3,} and (NH{sub 4}){sub 2}S{sub 2}O{sub 3} in 0.1 M concentration with the addition of CuSO{sub 4}, NH{sub 4}OH, and H{sub 2}O{sub 2}, was also studied. The results show that the digestion with aqua regia was efficient to characterize the metals present in the PCBs of mobile phones. However, the best method to solubilize silver was by digesting the sample with nitric acid. The leaching process using sodium thiosulfate was more efficient when an additional concentration of 0.015 and 0.030 M of the CuSO{sub 4} was added.
12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
New technology for recovering residual metals from nonmetallic fractions of waste printed circuit boards
Highlights: • Vibrated gas-solid fluidized bed can recycle residual metals from WPCBs. • Glass fibers have bad effect on vibrated gas-solid fluidized bed segregation. • Each size fraction has its own optimum segregation parameters. • Fine size fraction has the worst segregation efficiency. - Abstract: Recycling of waste printed circuit boards is important for environmental protection and sustainable resource utilization. Corona electrostatic separation has been widely used to recycle metals from waste printed circuit boards, but it has poor separation efficiency for finer sized fractions. In this study, a new process of vibrated gas-solid fluidized bed was used to recycle residual metals from nonmetallic fractions, which were treated using the corona electrostatic separation technology. The effects of three main parameters, i.e., vibration frequency, superficial air flow velocity, and fluidizing time on gravity segregation, were investigated using a vibrating gas-solid fluidized bed. Each size fraction had its own optimum parameters. Corresponding to their optimal segregation performance, the products from each experiment were analyzed using an X-ray fluorescence (XRF) and a scanning electron microscope (SEM) equipped with an energy dispersive spectrometer (EDS). From the results, it can be seen that the metal recoveries of −1 + 0.5 mm, −0.5 + 0.25 mm, and −0.25 mm size fractions were 86.39%, 82.22% and 76.63%, respectively. After separation, each metal content in the −1 + 0.5 or −0.5 + 0.25 mm size fraction reduced to 1% or less, while the Fe and Cu contents are up to 2.57% and 1.50%, respectively, in the −0.25 mm size fraction. Images of the nonmetallic fractions with a size of −0.25 mm indicated that a considerable amount of clavate glass fibers existed in these nonmetallic fractions, which may explain why fine particles had the poorest segregation performance.
12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
Delamination mechanism study of large size waste printed circuit boards by using dimethylacetamide
Highlights: • Dimethylacetamide (DMA) dissolved the epoxy resin of printed circuit boards (WPCB). • PCBs of 1, 4, 9 and 16 cm{sup 2} were delaminated in 150, 180, 300 and 420 min, respectively. • Peaks of epoxy resin and DMA were evident in the NMR spectra. • Shift in C=O, OH peaks of DMA & resin, respectively was registered w.r.t. time. • Hydrogen bonding between C=O of DMA and OH of resin results in the dissolution. - Abstract: Present work investigates the recycling of waste printed circuit boards (PCBs) by cracking of its multi-layered structure by using dimethylacetamide (DMA). The study shows that cracking and separation of layers of PCBs increases as the temperature increases; and decreases as the surface area of PCBs increases. After separation of layers, the used solvent was analyzed by proton and carbon nuclear magnetic resonance spectroscopy (NMR) to understand the dissolution phenomenon of resin. Further, NMR and Fourier transform infrared spectroscopy analysis of DMA sample after 1 h, 2 h, 3 h, 4 h and 8 h of reaction with PCBs at 433 K and PCB:DMA ratio (wt/vol) of 3:10 has been carried out to investigate the mechanism of dissolution of resin. These studies revealed that hydroxyl group of PCBs polymeric chain participates in hydrogen bonding with parent carbonyl group of DMA molecule that results in the solvation of resin. Possible chemical reaction based on the above finding has been discussed. Using this technique, separation of the metallic fraction without application of any energy intensive mechanical pre-processing is possible.
12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
Soldering mask laser removal from printed circuit boards aiming copper recycling
Highlights: • Use of laser as a tool for recycling of electronic waste is proposed. • Laser stripping removes varnishes from circuit boards exposing the copper underneath allowing electrochemical copper recover. •Good removal is achieved with nanosecond pulsed irradiation at 1064 nm. • Waste generated by the process is mainly solid, macroscopic and easy to handle. - Abstract: Management of waste of electric and electronic equipment (WEEE) is a key issue for modern societies; furthermore, it contains valuable materials that can be recycled, especially in printed circuit boards (PCB), which have approximately one-third of their weight in copper. In this study we demonstrated the use of laser to strip the covering soldering mask on PCB’s, thus exposing the copper underneath so that extraction techniques may take place. Using a Q-Switched Nd:YAG laser operating at 1064 nm and 532 nm we tested the procedure under different energy conditions. The laser stripping of the soldering mask was achieved with satisfactory results by irradiation with 225 mJ at 1064 nm. However, when using similar parameters at 532 nm the process of the coating ejection was not promoted properly, leading to a faulty detachment. Infrared laser PCB stripping presents itself to be technically viable and environmental friendly, since it uses no chemicals inputs, offering one more option to WEEE treatment and recycling.
12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
All 2D Material Printed Diodes and Circuits on Paper for Sustainable Electronics
Sustainable electronics aim to reduce environmental impact by using ecofriendly materials, energy-efficient manufacturing, and recyclable components. However, existing approaches rely on complex, resource-intensive methods, rare metals, or nanomaterials with limited stability as well as plastic substrates, raising sustainability issues. Solution-processed two-dimensional (2D) materials offer a promising alternative: water-based and biocompatible conductive, semiconductive, and insulating 2D material inks can be produced with scalable techniques and are suitable for the fabrication of fully printed devices on low-cost and biodegradable paper substrates. However, 2D material only and fully printed diodes on paper have not yet been reported. Here, we demonstrate fully inkjet-printed 2D material-based diodes on paper using metal-insulator-semiconductor and metal-insulator-metal-semiconductor architectures. Water-based graphene and MoS2 inks, prepared by liquid-phase exfoliation, are used for the metallic and insulating films, while electrochemical exfoliation is used to produce the semiconducting MoS2 ink. The highest forward-to-reverse current ratio obtained is 330 (at ±2 V), while the forward current density is 1 mA/cm2 (at 1 V), making the diode performance comparable to the best solution-processed diodes reported so far. However, in contrast to previous works, fabrication occurs entirely at room temperature and ambient pressure, without using high-pressure sputtering, thermal evaporation, and any precious metal ink. The devices maintain stable performance under bending up to strain of 4% over 10,000 cycles. Finally, the diodes are successfully integrated with other 2D-material based electrical components to realize fully printed RC circuits, differentiators, integrators, and AC-to-DC converters onto paper, hence demonstrating the suitability of our approach for sustainable and disposable integrated circuits.
2D materials↗
Air-Stable CuInSe 2 Nanocrystal Transistors and Circuits via Post-Deposition Cation Exchange
Colloidal semiconductor nanocrystals (NCs) are a promising materials class for solution-processable, next-generation electronic devices. However, most high-performance devices and circuits have been achieved using NCs containing toxic elements, which may limit their further device development. In this work, we fabricate high mobility CuInSe 2 NC field-effect transistors (FETs) using a solution-based, post-deposition, sequential cation exchange process that starts with electronically coupled, thiocyanate (SCN)-capped CdSe NC thin films. First Cu + is substituted for Cd 2+ transforming CdSe NCs to Cu-rich Cu 2 Se NC films. Next, Cu 2 Se NC films are dipped into a Na 2 Se solution to Se-enrich the NCs, thus compensating the Cu-rich surface, promoting fusion of the Cu 2 Se NCs, and providing sites for subsequent In-dopants. The liquid-coordination-complex trioctylphosphine–indium chloride (TOP–InCl 3 ) is used as a source of In 3+ to partially exchange and n -dope CuInSe 2 NC films. We demonstrate Al 2 O 3 -encapsulated, air-stable CuInSe 2 NC FETs with linear (saturation) electron mobilities of 8.2 ± 1.8 cm 2 /(V s) (10.5 ± 2.4 cm2/(V s)) and with current modulation of 10 5 , comparable to that for high-performance Cd-, Pb-, and As-based NC FETs. The CuInSe 2 NC FETs are used as building blocks of integrated inverters to demonstrate their promise for low-cost, low-toxicity NC circuits.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Analysis of single-event upset of magnetic tunnel junction used in spintronic circuits caused by radiation-induced current
This paper describes the possibility of a switching upset of a magnetic tunnel junction (MTJ) caused by a terrestrial radiation-induced single-event-upset (SEU) current in spintronic integrated circuits. The current waveforms were simulated by using a 3-D device simulator in a basic circuit including MTJs designed using 90-nm CMOS parameters and design rules. The waveforms have a 400 -μA peak and a 200-ps elapsed time when neutron particles with a linear energy transfer value of 14 MeV cm{sup 2}/mg enter the silicon surface. The authors also found that the SEU current may cause soft errors with a probability of more than 10{sup −12} per event, which was obtained by approximate solution of the ordinary differential equation of switching probability when the intrinsic critical current (I{sub C0}) became less than 30 μA.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗