Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “CARRIER MODULATION”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 811 records · Page 45
All sourcesNASA NTRSDOE OSTI
DOE OSTI2011

Solitary and freak waves in a dusty plasma with negative ions

It is shown that solitary and freak waves can propagate in a dusty plasma composed of positive and negative ions, as well as nonextensive electrons. The evolution of the solitary waves is described by the Korteweg-de Vries (KdV) equation. However, when the frequency of the carrier wave is much smaller than the ion plasma frequency then the KdV equation is also used to study the nonlinear evolution of modulationally unstable modified ion-acoustic wavepackets through the derivation of the nonlinear Schroedinger (NLS) equation. In order to show that the characteristics of the solitary and freak waves are influenced by the plasma parameters, the relevant numerical analysis of the appropriate nonlinear solutions is presented. The relevance of the present investigation to nonlinear waves in astrophysical plasma environments is discussed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2016

Quantum interference of biphotons with a Doppler frequency shift

We report a theoretical study of transformation of a biphoton state of light under Bragg diffraction on a travelling sound wave in an acousto-optic modulator (AOM). It is shown that the diffraction of AOM biphotons emitted during the collinear parametric scattering of light leads to a shift of the carrier frequency of a biphoton wave packet, which exceeds twice the Doppler frequency shift for the classical field. A method is proposed for measuring the Doppler frequency shift of a biphoton, which is based on interference between independent biphotons. (quantum interferometry)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Damp Heat Induced Degradation of Silicon Heterojunction Solar Cells With Cu-Plated Contacts

Damp heat exposure is one of the most stringent environments for testing the durability of solar cells in packaged modules. Damp heat stresses and induces a variety of degradation modes in solar cells and modules: for example, moisture-induced corrosion of electrodes and interconnections, deterioration of polymeric materials, and/or thermally activated diffusion processes. To screen for these and other potential degradation modes, we subject one-cell modules containing silicon heterojunction (SHJ) solar cells with Cu-plated contacts to extended damp heat tests at 85 °C/85% relative humidity. SHJ cells were laminated with two common encapsulants: ethylene vinyl acetate (EVA) and polyolefin elastomer (POE), and two constructions: glass-backsheet and glass-glass. We observe degradation in all components of solar cell maximum power (PMP): current, voltage, and fill factor, and find evidence of increased carrier recombination and nonideal diode behavior with increasing stress. For glass-backsheet constructions, EVA samples generally degrade more than POE by a factor of approximately 1.5x PMP, and the different encapsulants produce different degradation patterns. Similar trends are observed in glass-glass modules, but to a lesser degree. In a different experiment, we observe a decrease in effective minority carrier lifetime of nonmetallized SHJ precursors measured after damp heat. This implies that some degradation unrelated to the contacts is to be expected and confirms the observation of increasing recombination.

14 SOLAR ENERGY↗
DOE OSTI2023

Toward High Conversion Efficiency of Thermoelectric Modules through Synergistical Optimization of Layered Materials

Abstract Waste‐heat electricity generation using high‐efficiency solid‐state conversion technology can significantly decrease dependence on fossil fuels. Here, a synergistical optimization of layered half‐Heusler (hH) materials and module to improve thermoelectric conversion efficiency is reported. This is realized by manufacturing multiple thermoelectric materials with major compositional variations and temperature‐gradient‐coupled carrier distribution by one‐step spark plasma sintering. This strategy provides a solution to overcome the intrinsic concomitants of the conventional segmented architecture that only considers the matching of the figure of merit ( zT ) with the temperature gradient. The current design is dedicated to temperature‐gradient‐coupled resistivity and compatibility matching, optimum zT matching, and reducing contact resistance sources. By enhancing the quality factor of the materials by Sb‐vapor‐pressure‐induced annealing, a superior zT of 1.47 at 973 K is achieved for (Nb, Hf)FeSb hH alloys. Along with the low‐temperature high‐ zT hH alloys of (Nb, Ta, Ti, V)FeSb, the single stage layered hH modules are developed with efficiencies of ≈15.2% and ≈13.5% for the single‐leg and unicouple thermoelectric modules, respectively, under Δ T of 670 K. Therefore, this work has a transformative impact on the design and development of next‐generation thermoelectric generators for any thermoelectric material families.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2018

Overcoming Carrier Concentration Limits in Polycrystalline CdTe Thin Films with In Situ Doping

Abstract Thin film materials for photovoltaics such as cadmium telluride (CdTe), copper-indium diselenide-based chalcopyrites (CIGS), and lead iodide-based perovskites offer the potential of lower solar module capital costs and improved performance to microcrystalline silicon. However, for decades understanding and controlling hole and electron concentration in these polycrystalline films has been extremely challenging and limiting. Ionic bonding between constituent atoms often leads to tenacious intrinsic compensating defect chemistries that are difficult to control. Device modeling indicates that increasing CdTe hole density while retaining carrier lifetimes of several nanoseconds can increase solar cell efficiency to 25%. This paper describes in-situ Sb, As, and P doping and post-growth annealing that increases hole density from historic 10 14 limits to 10 16 –10 17 cm −3 levels without compromising lifetime in thin polycrystalline CdTe films, which opens paths to advance solar performance and achieve costs below conventional electricity sources.

14 SOLAR ENERGY↗
DOE OSTI2015

Electronic transport characterization of silicon wafers by spatially resolved steady-state photocarrier radiometric imaging

Spatially resolved steady-state photocarrier radiometric (PCR) imaging technique is developed to characterize the electronic transport properties of silicon wafers. Based on a nonlinear PCR theory, simulations are performed to investigate the effects of electronic transport parameters (the carrier lifetime, the carrier diffusion coefficient, and the front surface recombination velocity) on the steady-state PCR intensity profiles. The electronic transport parameters of an n-type silicon wafer are simultaneously determined by fitting the measured steady-state PCR intensity profiles to the three-dimensional nonlinear PCR model. The determined transport parameters are in good agreement with the results obtained by the conventional modulated PCR technique with multiple pump beam radii.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

Ultrafast Silicon Photonics with Visible to Mid-Infrared Pumping of Silicon Nanocrystals

Dynamic optical control of infrared (IR) transparency and refractive index is achieved using boron-doped silicon nanocrystals excited with mid-IR optical pulses. Also, unlike previous silicon-based optical switches, large changes in transmittance are achieved without a fabricated structure by exploiting strong light coupling of the localized surface plasmon resonance (LSPR) produced from free holes of p-type silicon nanocrystals. The choice of optical excitation wavelength allows selectivity between hole heating and carrier generation through intraband or interband photoexcitation, respectively. Mid-IR optical pumping heats the free holes of p-Si nanocrystals to effective temperatures greater than 3500 K. Increases of the hole effective mass at high effective hole temperatures lead to a sub-picosecond change of the dielectric function resulting in a redshift of the LSPR, modulating mid-IR transmission by as much as 27% and increasing the index of refraction by more than 0.1 in the mid-IR. Low hole heat capacity dictates sub-picosecond hole cooling, substantially faster than carrier recombination, and negligible heating of the Si lattice, permitting mid-IR optical switching at terahertz repetition frequencies. Further, the energetic distribution of holes at high effective temperatures partially reverses the Burstein-Moss effect, permitting modulation of transmittance at telecommunications wavelengths. Lastly, the results presented here show that doped silicon, particularly in micro- or nanostructures, is a promising dynamic metamaterial for ultrafast IR photonics.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Study of phase-locking of optoelectronic microwave oscillators considering amplitude perturbation

This paper presents a detailed study of the phase-locking phenomenon in single-loop optoelectronic microwave oscillators considering strong radio frequency (RF) signal injection. The analyses are made in terms of the lock-range, beat frequency and the spectral components of the unlocked-driven oscillator in presence of amplitude perturbation. An approximate expression for the amplitude perturbation of the oscillator is derived and the influence of amplitude perturbation on the phase-locking dynamics is analysed. The influence of external RF signal on the frequency pulling of the unlocked-driven optoelectronic oscillator (OEO) is also studied. It is shown that the unlocked-driven OEO output signal has a very non-symmetrical sideband distribution about the carrier. Also, analytical technique for studying the response characteristics of a phase-locked OEO to pure continuous wave amplitude modulated signal is presented. The simulation findings are also given in partial support of the conclusions of the analysis.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

On quantum-dot lasing at gain peak with linewidth enhancement factor $α$ H = 0

This paper describes an investigation of the linewidth enhancement factor α H in a semiconductor quantum-dot laser. Results are presented for active region parameters and laser configurations important for minimizing α H . In particular, the feasibility of lasing at the gain peak with α H = 0 is explored. The study uses a many-body theory with dephasing effects from carrier scattering treated at the level of quantum-kinetic equations. InAs quantum-dot lasers with different p-modulation doping densities are fabricated and measured to verify the calculated criteria on laser cavity design and epitaxial growth conditions.

42 ENGINEERING↗
NASA NTRS1985

Damping Relaxation Oscillations in Laser Diodes

Proposed semiconductor laser modulated at frequencies up to near its resonant frequency more efficiently than older devices. New laser uses two different effective carrier lifetimes: one for dc and lowfrequency operation and another for operation near resonant frequency. Laser part of bipolar transistor with capacitor that serves as ac short circuit.

Katz, J.↗
NASA NTRS1985

Shuttle derived launch vehicle wind tunnel tests

Studies are being conducted regarding new launch vehicle configurations which may effectively and economically share the delivery of payloads to orbit with the present Space Transportation System (STS). The role envisaged for these launch vehicles is related to the execution of missions whose requirements exceed the STS Shuttle capabilities, taking into account the delivery of much heavier or larger payloads. One class of advanced launch vehicles is configured to take advantage of the existing Shuttle hardware and facilities. Such vehicles are referred to as Shuttle Derived Vehicles (SDV). One version of an SDV consists of two STS elements, including the external tank (ET) and solid rocket boosters, and a cargo carrier. Attention is given to wind tunnel tests, which are being conducted with SDV sidemount configurations incorporating various size payload modules.

Tewell, J. R.↗
NASA NTRS1992

Resolution Of Phase Ambiguities In QPSK

Report discusses several techniques for resolution of phase ambiguities in detection and decoding of radio signals modulated by coherent quadrature phase-shift keying (QPSK) and offset QPSK (OQPSK). Eight ambiguities: four associated with phase of carrier signal in absence of ambiguity in direction of rotation of carrier phase, and another four associated with carrier phase in presence of phase-rotation ambiguity.

Nguyen, Tien M.↗
NASA NTRS1992

The investigation of bandwidth efficient coding and modulation techniques

The New Mexico State University Center for Space Telemetering and Telecommunications systems has been, and is currently, engaged in the investigation of trellis-coded modulation (TCM) communication systems. In particular, TCM utilizing M-ary phase shift keying is being studied. The study of carrier synchronization in a TCM environment, or in MPSK systems in general, has been one of the two main thrusts of this grant. This study has involved both theoretical modelling and software simulation of the carrier synchronization problem.

Source record↗
NASA NTRS1992

Multi-mode modem/codec designs

The design of an integrated modem/codec unit which can receive coded and uncoded BPSK an QPSK using de facto standard coding schemes as well as 8PSK-TCM and 16PSK-TCM is examined. The design is totally compatible with today's modulation schemes and capable of processing tomorrow's TCM codes. This is accomplished in the modem by using quadrature channel carrier recovery processing and a version of the MAP phase detector algorithm. The symbol synchronization is accomplished with a derivative of an early-late gate designed to accommodate multilevel signals.

Osborne, William↗
NASA NTRS1999

The Aviation System Analysis Capability Air Carrier Cost-Benefit Model

To meet its objective of assisting the U.S. aviation industry with the technological challenges of the future, NASA must identify research areas that have the greatest potential for improving the operation of the air transportation system. Therefore, NASA is developing the ability to evaluate the potential impact of various advanced technologies. By thoroughly understanding the economic impact of advanced aviation technologies and by evaluating how the new technologies will be used in the integrated aviation system, NASA aims to balance its aeronautical research program and help speed the introduction of high-leverage technologies. To meet these objectives, NASA is building the Aviation System Analysis Capability (ASAC). NASA envisions ASAC primarily as a process for understanding and evaluating the impact of advanced aviation technologies on the U.S. economy. ASAC consists of a diverse collection of models and databases used by analysts and other individuals from the public and private sectors brought together to work on issues of common interest to organizations in the aviation community. ASAC also will be a resource available to the aviation community to analyze; inform; and assist scientists, engineers, analysts, and program managers in their daily work. The ASAC differs from previous NASA modeling efforts in that the economic behavior of buyers and sellers in the air transportation and aviation industries is central to its conception. Commercial air carriers, in particular, are an important stakeholder in this community. Therefore, to fully evaluate the implications of advanced aviation technologies, ASAC requires a flexible financial analysis tool that credibly links the technology of flight with the financial performance of commercial air carriers. By linking technical and financial information, NASA ensures that its technology programs will continue to benefit the user community. In addition, the analysis tool must be capable of being incorporated into the wide-ranging suite of economic and technical models that comprise ASAC. This report describes an Air Carrier Cost-Benefit Model (CBM) that meets these requirements. The ASAC CBM is distinguished from many of the aviation cost-benefit models by its exclusive focus on commercial air carriers. The model considers such benefit categories as time and fuel savings, utilization opportunities, reliability and capacity enhancements, and safety and security improvements. The model distinguishes between benefits that are predictable and those that occur randomly. By making such a distinction, the model captures the ability of air carriers to reoptimize scheduling and crew assignments for predictable benefits. In addition, the model incorporates a life-cycle cost module for new technology, which applies the costs of nonrecurring acquisitions, recurring maintenance and operation, and training to each aircraft equipment type independently.

Gaier, Eric M.↗
NASA NTRS2008

Combined GMSK Communications and PN Ranging

A document discusses a method by which GMSK (Gaussian minimum shift keying) modulation and a pseudonoise (PN) ranging signal may be combined. By isolating the in-phase and quadrature components after carrier lock, and extracting their low-pass and band-pass filtered components, there is enough information available to both demodulate data and track the PN signal. The proposed combined GMSK communications and PN ranging is one potential approach to address emerging requirements for simultaneous high data rate communications from and tracking of vehicles in deep space or at the Moon.

Orr, Richard↗
DOE OSTI2017

Modular Low-Noise Piezoamplifier Driver for SRF Applications

Controlling the resonant frequency of superconducting cavities can be difficult due to their high sensitvity to mechanical and pressure variations. In addition, the cooling process itself as well as RF heating and deformation leads to resonant frequency shifts that need to be mechanicalyl compensated for. Stepper motors are often used for gross adjustment, but they also introduce significant noise in to the cavity system. Piezo transducers provide a way to perturb the cavity with minimal disruption. For the LCLS-II project, a modular piezoamplifier driver was developed using off-the-shelf components in conjunction with a custom carrier board. This allows for a low-noise system that provides real-time monitoring of piezotransducer health. The modules are designed to be easily serviceable and use audio-style connectors for monitor and drive ports on the chassis.

43 PARTICLE ACCELERATORS↗
NASA NTRS1998

Ultrafast Modulation and Switching of Quantum-Well Lasers using Terahertz Fields

Modulation and switching of semiconductor lasers are important for laser-based information technology. Typically the speed of modulation and switching is limited by interband processes such as stimulated and spontaneous recombinations which occur on a nanosecond time scale. This is why the diode laser modulation has been restricted to tens of GHz. Modulation at higher speed is highly desirable as the information technology enters into the so-called tera-era. In this paper, we study the possibility of utilizing THz-field-induced plasma heating to modulate quantum-well lasers. This is a timely study since, with the advancement of THz solid-state sources and free-electron lasers, THz physics and related technology is currently coming out of its infancy. The investigation of interplaying THz and optical fields is also of intruiging fundamental interest. First, we introduce theoretical plasma heating results for the quantum-well optical amplifier in the presense of an intense half-cycle THz pulse. The heated carrier distributions are then utilized to calculate the THz-pulse-induced change in refractive index and gain profile. Since the electron-hole-plasma is heated using intraband transitions, we circumvent the usual complications due to an overall change in density, and the nonlinear recovery is governed solely by the carrier-LO-phonon interactions, typically 5 ps for a complete recovery. This procedure implies THz and sub-THz switching and recovery rates, respectively; using either gain modulation or index modulation. Plasma heating via steady-state THz fields is also studied. Finally, numerical simulation of a coupled set of equations to investigate the THz modulation based on a simplified model for quantum-well lasers is presented. Our results show that a semiconductor laser can be modulated at up to 1 THz with little distortion with a THz field amplitude at the order of a few kV/cm. Laser responses to a change in THz frequency will be shown. Constraints, practicalities, and applications will be discussed.

Ning, Cun-Zheng↗