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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 811 records · Page 45
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Comparative I/O workload characterization of two leadership class storage clusters. In: PDSW '15 Proceedings of the 10th Parallel Data Storage Workshop

The Oak Ridge Leadership Computing Facility (OLCF) is a leader in large-scale parallel file system development, design, deployment and continuous operation. For the last decade, the OLCF has designed and deployed two large center-wide parallel file systems. The first instantiation, Spider 1, served the Jaguar supercomputer and its predecessor, Spider 2, now serves the Titan supercomputer, among many other OLCF computational resources. The OLCF has been rigorously collecting file and storage system statistics from these Spider systems since their transition to production state. In this paper we present the collected I/O workload statistics from the Spider 2 system and compare it to the Spider 1 data. Our analysis show that the Spider 2 workload is more more write-heavy I/O compared to Spider 1 (75% vs. 60%, respectively). The data also show the OLCF storage policies such as periodic purges are effectively managing the capacity resource of Spider 2. Furthermore, due to improvements in tdm_multipath and ib_srp software, we are utilizing the Spider 2 system bandwidth and latency resources more effectively. The Spider 2 bandwidth usage statistics shows that our system is working within the design specifications. However, it is also evident that our scientific applications can be more effectively served by a burst buffer storage layer. All the data has been collected by monitoring tools developed for the Spider ecosystem. We believe the observed data set and insights will help us better design the next-generation Spider file and storage system. It will also be helpful to the larger community for building more effective large-scale file and storage systems.

Gunasekaran, Raghul↗
NASA NTRS1993

Improved Hall-Effect Sensors For Magnetic Memories

High-electron-mobility sensor films deposited on superlattice buffer (strain) layers. Improved Hall-effect sensors offer combination of adequate response and high speed needed for use in micromagnet/Hall-effect random-access memories. Hall-effect material chosen for use in sensors is InAs.

Wu, Jiin-Chuan↗
DOE OSTI2016

Local, global, and nonlinear screening in twisted double-layer graphene

Significance Using scanning tunneling microscopy and numerical simulations we demonstrate that a graphene buffer sheet placed underneath an atomically thin layer is an extremely effective method to increase the quality of 2D electron systems without modifying their electronic structure and without compromising the gating capabilities. We show that owing to its remarkable nonlinear screening capability the graphene buffer layer provides better shielding from substrate-induced perturbations than either increasing the distance to the substrate or doubling the carrier density, or even than using a graphene bilayer.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Co-optimization of SnS absorber and Zn(O,S) buffer materials for improved solar cells: SnS absorber and Zn(O,S) buffer materials for improved solar cells

Thin-film solar cells consisting of earth-abundant and non-toxic materials were created from pulsed chemical vapor deposition (pulsed-CVD) of SnS as the p-type absorber layer and atomic layer deposition (ALD) of Zn(O,S) as the n-type buffer layer. The effects of deposition temperature and annealing conditions of the SnS absorber layer were investigated for solar cells with a structure of Mo/SnS/Zn(O,S)/ZnO/ITO. Solar cells were further optimized by varying the stoichiometry of Zn(O,S) and the annealing conditions of SnS. Post-deposition annealing in pure hydrogen sulfide improved crystallinity and increased the carrier mobility by one order of magnitude, and a power conversion efficiency up to 2.9% was achieved.

14 SOLAR ENERGY↗
DOE OSTI2014

Incorporation of La in epitaxial SrTiO{sub 3} thin films grown by atomic layer deposition on SrTiO{sub 3}-buffered Si (001) substrates

Strontium titanate, SrTiO{sub 3} (STO), thin films incorporated with lanthanum are grown on Si (001) substrates at a thickness range of 5–25 nm. Atomic layer deposition (ALD) is used to grow the La{sub x}Sr{sub 1−x}TiO{sub 3} (La:STO) films after buffering the Si (001) substrate with four-unit-cells of STO deposited by molecular beam epitaxy. The crystalline structure and orientation of the La:STO films are confirmed via reflection high-energy electron diffraction, X-ray diffraction, and cross-sectional transmission electron microscopy. The low temperature ALD growth (∼225 °C) and post-deposition annealing at 550 °C for 5 min maintains an abrupt interface between Si (001) and the crystalline oxide. Higher annealing temperatures (650 °C) show more complete La activation with film resistivities of ∼2.0 × 10{sup −2} Ω cm for 20-nm-thick La:STO (x ∼ 0.15); however, the STO-Si interface is slightly degraded due to the increased annealing temperature. To demonstrate the selective incorporation of lanthanum by ALD, a layered heterostructure is grown with an undoped STO layer sandwiched between two conductive La:STO layers. Based on this work, an epitaxial oxide stack centered on La:STO and BaTiO{sub 3} integrated with Si is envisioned as a material candidate for a ferroelectric field-effect transistor.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Strain relaxation in multilayer III–N structures on Si(111) substrates

X-ray diffractometry and X-ray scattering reciprocal space maps have been used to study strain relaxation in a complex buffer composed of seven intermediate layers of Al{sub x}Ga{sub 1−x}N composition with different values of x, decreasing with an increase in the distance from the substrate. The layers have been grown by hydride metalorganic vapor phase epitaxy on silicon and sapphire substrates. Differences in the structural quality of the first four layers of a multilayer buffer grown on different substrates have been revealed. A gradual smoothing out of these differences in the next three layers with an increase in the layer serial number has been shown. The last grown intermediate Al{sub x}Ga{sub 1−x}N layer and the GaN layer grown on it have identical thicknesses and degrees of mosaicity, regardless of the substrate type. Device structures grown on a complex buffer demonstrate emission in approximately the same wavelength range.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

3D Carbon Coating Enabled High‐capacity and Stable Micro‐sized Silicon Suboxide‐graphite Blended Anodes for Practical Lithium‐ion Batteries

Abstract Silicon oxide (SiO x ) is a promising anode candidate of lithium‐ion batteries (LIBs) owing to its extremely high specific capacity. However, the low initial Coulombic efficiency (ICE) and rapid capacity degradation of SiO x , triggered by the enormous volume variation upon repeated (de)lithiation, gravely hinder its practical use. Herein, two mass‐produced micro‐sized SiO x @C composites with obviously different morphologies for commercial LIBs are reported. Particularly, the SiO x ‐graphite blended anode (SiO x @3D‐G‐Gr) based on SiO x wrapped by three‐dimensional (3D) carbon layers (SiO x @3D‐G) exhibits a capacity of 519 mAh g −1 , an ICE of 90.0 % and a capacity retention of 83.4 % at 0.2 C over 100 cycles. which is far exceeding its counterpart SiO x @C‐H‐Gr (65.7 %). The obtained impressive properties of SiO x @3D‐G originate from the critical contribution of 3D carbon layers, which serves as the effective stress buffer and protective layer as well as the strong networks for electron/Li + transport. Accordingly, the full‐cell based on SiO x @3D‐G‐Gr anode and commercial LiCoO 2 cathode delivers a capacity of 803 mAh and an excellent capacity retention of 95.6 % (616 mAh, 96.6 % for graphite, respectively) at 1 C over 100 cycles with a stabilized CE of nearly 100 %. The micro‐sized SiO x @3D‐G showing a promising prospect in the commercial‐grade anodes in LIBs.

Electrochemistry↗
DOE OSTI2023

Metamorphic two-junction photovoltaic devices with removable graded buffers

The present disclosure relates to a method for manufacturing a device, where the device includes, in order, a metamorphic contact layer, a first metamorphic junction, a metamorphic tunnel junction, and a second metamorphic junction. To produce the device, the manufacturing includes, in order, a first depositing of a buffer layer onto a substrate, a second depositing of the metamorphic contact layer, a third depositing of the first metamorphic junction, a fourth depositing of the metamorphic tunnel junction, a fifth depositing of the second metamorphic junction, and the removing of the buffer layer and the substrate.

Schulte, Kevin Louis↗
DOE OSTI2017

High bandgap III-V alloys for high efficiency optoelectronics

High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al.sub.1-xIn.sub.xP layer, and a step-grade buffer between the substrate and at least one Al.sub.1-xIn.sub.xP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al.sub.1-xIn.sub.xP is reached.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Ferroelectric and ferromagnetic properties of epitaxial BiFeO{sub 3}-BiMnO{sub 3} films on ion-beam-assisted deposited TiN buffered flexible Hastelloy

Growth of multifunctional thin films on flexible substrates is of great technological significance since such a platform is needed for flexible electronics. In this study, we report the growth of biaxially aligned (BiFeO{sub 3}){sub 0.5}:(BiMnO{sub 3}){sub 0.5} [BFO-BMO] films on polycrystalline Hastelloy by using a biaxially aligned TiN as a seed layer deposited by ion-beam-assisted deposited and a La{sub 0.7}Sr{sub 0.3}MnO{sub 3} (LSMO) as a buffer layer deposited by pulsed laser deposition. The LSMO is used not only as a buffer layer but also as the bottom electrode of the BFO-BMO films. X-ray diffraction showed that the BFO-BMO films are biaxially oriented along both in-plane and out-of-plane directions. The BFO-BMO films on flexible metal substrates showed a polarization of 22.9 μC/cm{sup 2}. The magnetization of the BFO-BMO/LSMO is 62 emu/cc at room temperature.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Lattice-engineered Si{sub 1-x}Ge{sub x}-buffer on Si(001) for GaP integration

We report a detailed structure and defect characterization study on gallium phosphide (GaP) layers integrated on silicon (Si) (001) via silicon-germanium (SiGe) buffer layers. The presented approach uses an almost fully relaxed SiGe buffer heterostructure of only 400 nm thickness whose in-plane lattice constant is matched to GaP—not at room but at GaP deposition temperature. Single crystalline, pseudomorphic 270 nm thick GaP is successfully grown by metalorganic chemical vapour deposition on a 400 nm Si{sub 0.85}Ge{sub 0.15}/Si(001) heterosystem, but carries a 0.08% tensile strain after cooling down to room temperature due to the bigger thermal expansion coefficient of GaP with respect to Si. Transmission electron microscopy (TEM) studies confirm the absence of misfit dislocations in the pseudomorphic GaP film but growth defects (e.g., stacking faults, microtwins, etc.) especially at the GaP/SiGe interface region are detected. We interpret these growth defects as a residue of the initial 3D island coalescence phase of the GaP film on the SiGe buffer. TEM-energy-dispersive x-ray spectroscopy studies reveal that these defects are often correlated with stoichiometric inhomogeneities in the GaP film. Time-of-flight Secondary ion mass spectrometry detects sharp heterointerfaces between GaP and SiGe films with a minor level of Ga diffusion into the SiGe buffer.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

AGR-5/6/7 Irradiation Test Predictions using PARFUME

PARFUME, (PARticle FUel ModEl) a fuel performance modeling code used for high temperature gas-cooled reactors (HTGRs), was used to model the Advanced Gas Reactor (AGR)-5/6/7 irradiation test using predicted physics and thermal hydraulics data. The AGR-5/6/7 test consists of the combined fifth, sixth, and seventh planned irradiations of the AGR Fuel Development and Qualification Program. The AGR-5/6/7 test train is a multi-capsule, instrumented experiment that is designed for irradiation in the 133.4-mm diameter north east flux trap (NEFT) position of Advanced Test Reactor (ATR). Each capsule contains compacts filled with uranium oxycarbide (UCO) unaltered fuel particles. This report documents the calculations performed to predict the failure probability of tristructural isotropic (TRISO)-coated fuel particles during the AGR-5/6/7 experiment. In addition, this report documents the calculated source term from the driver fuel. The calculations include modeling of the AGR-5/6/7 irradiation that is scheduled to occur from October 2017 to April 2021 over a total of 13 ATR cycles, including nine normal cycles and four Power Axial Locator Mechanism (PALM) cycle for a total between 500 – 550 effective full power days (EFPD). The irradiation conditions and material properties of the AGR-5/6/7 test predicted zero fuel particle failures in Capsules 1, 2, and 4. Fuel particle failures were predicted in Capsule 3 due to internal particle pressure. These failures were predicted in the highest temperature compacts. Capsule 5 fuel particle failures were due to inner pyrolytic carbon (IPyC) cracking causing localized stresses concentrations in the SiC layer. This capsule predicted the highest particle failures due to the lower irradiation temperature. In addition, shrinkage of the buffer and IPyC layer during irradiation resulted in formation of a buffer-IPyC gap. The two capsules at the two ends of the test train, Capsules 1 and 5 experienced the smallest buffer-IPyC gap formation due to the lower irradiation fluences and temperatures. Capsule 3 experienced the largest buffer-IPyC gap formation of just under 24 µm. The release fraction of fission products Ag, Cs, and Sr silver (Ag), cesium (Cs), and strontium (Sr) vary depending on capsule location and irradiation temperature. The maximum release fraction of Ag occurs in Capsule 3, reaching up to 84.8% for the TRISO fuel particles. The release fraction of the other two fission products, Cs and Sr are much smaller and, in most cases, less than 1%. The notable exception is again in Capsule 3, where the release fraction for Cs and Sr reach up to 9.7% and 19.1%, respectively.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2019

Energy Expenditure Upon the Formation of the Elastically Stressed State in the Layers of a Step-Graded Metamorphic Buffer in a Heterostructure Grown on a (001) GaAs Substrate

On the basis of data on X-ray structural analysis performed by the method of reciprocal-space mapping and investigations using secondary-ion mass spectrometry and transmission electron microscopy, it is shown that vertical compressive stresses also arise in a multilayer epitaxial heterostructure comprised of a step-graded metamorphic buffer along with lateral compressive stresses. The cause of the appearance of vertical stresses is the effect of interlayer hardening, which arises due to the deceleration of fragments of glide dislocations by interphase boundaries. Analysis performed within the framework of the linear theory of elasticity shows that the elastically stressed state of the buffer steps is similar to the state that can be achieved as a result of a two-stage deformation process: bulk and biaxial compression. Bulk compression leads to large energy expenditures in the formation of the structure of the buffer steps, which is reflected, in particular, in violation of the coherence between the dislocation-free and the underlying layers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Influence of Calcite on Uranium(VI) Sorption onto Montmorillonite Clay

Currently, most proposed methods for the long-term storage of nuclear waste include engineered buffer systems (EBS) in underground geologic repositories. The design of EBS typically involves a layer of geological buffer material such as bentonite. Bentonite is an ideal material for these systems, since it largely consists of the swelling smectite clay montmorillonite, which provides two types of surface sites available for the sorption of radionuclides, such as uranium(VI) (U(VI)). However, the presence of calcite, a common accessory mineral in bentonite, may potentially alter the sorption of U(VI) onto montmorillonite in multiple ways. First, calcite provides an additional surface for U(VI) sorption reactions. In addition, calcite dissolution will lead to dissolved calcium in porewater solutions, which may in turn affect U(VI) solution speciation, U(VI) ion exchange reactions, and the stacking and interlayer spacing of smectite layers. Last, a potential formation of U(VI)-Ca-carbonate co-precipitates may remove U(VI) from solution. As a first step, we characterized the sorption of U(VI) onto montmorillonite in the presence and absence of dissolved calcium at various ionic strength conditions in batch sorption envelope experiments. The presence of dissolved calcium resulted in decreased U(VI) sorption onto montmorillonite in acidic environments, but in no apparent changes in U(VI) sorption in near-neutral pH ranges. At higher pH values, there may be a possible decrease in U(VI) sorption, which needs to be further investigated. The observed trends at low pH can be explained by the preferential binding of Ca 2+ cations relative to UO 2 2+ , which resulted in a competition between the two cations for clay surface sites. This hypothesis is further supported by the results of additional sorption experiments, which were performed at various ionic strengths, but in the absence of calcium. In a next step, we will expand our experiments to include mixtures of calcite and montmorillonite as solids.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2024

Micro-tensile Properties of Fueled Irradiated AGR-2 TRISO-coated Particle Buffer, IPyC, and SiC Interlayer Regions

Tristructural isotropic (TRISO) coated nuclear fuel particles are proving to be a versatile fuel form for new reactor designs. Understanding the bounding strength and failure mode of each coating interface is important to both fuel quality evaluation and failure prediction. A mechanism of key significance is failure of the silicon carbide (SiC) layer to retain fission products due to incomplete tearing of the buffer layer. This is a two-step mechanism involving both mechanical failure in the buffer and inner pyrolytic carbon (IPyC) layers and degradation of the SiC layer through palladium silicides at the IPyC-SiC interface. However, the mechanical properties of TRISO particle coating layers have yet to be fully characterized due to the small dimension of TRISO fuel particles and high radioactivity. To investigate this mechanism, in situ micro-tensile properties of the buffer, IPyC, SiC, buffer-IPyC, and IPyC-SiC interlayer regions of fueled TRISO particles have been tested at both as-fabricated and irradiated conditions. Determination of the mechanical properties of these TRISO particle regions will lead to a better understanding of the SiC layer failure mechanism and enable progress towards TRISO fuel qualification.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2014

Epitaxial ferromagnetic oxide thin films on silicon with atomically sharp interfaces

A bottleneck in the integration of functional oxides with silicon, either directly grown or using a buffer, is the usual formation of an amorphous interfacial layer. Here, we demonstrate that ferromagnetic CoFe{sub 2}O{sub 4} films can be grown epitaxially on Si(111) using a Y{sub 2}O{sub 3} buffer layer, and remarkably the Y{sub 2}O{sub 3}/Si(111) interface is stable and remains atomically sharp. CoFe{sub 2}O{sub 4} films present high crystal quality and high saturation magnetization.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Development of “GaSb-on-silicon” metamorphic substrates for optoelectronic device growth

The epitaxial development and characterization of metamorphic “GaSb-on-silicon” buffers as substrates for antimonide devices is presented. The approach involves the growth of a spontaneously and fully relaxed GaSb metamorphic buffer in a primary epitaxial reactor, and use of the resulting “GaSb-on-silicon” wafer to grow subsequent layers in a secondary epitaxial reactor. The buffer growth involves four steps—silicon substrate preparation for oxide removal, nucleation of AlSb on silicon, growth of the GaSb buffer, and finally capping of the buffer to prevent oxidation. This approach on miscut silicon substrates leads to a buffer with negligible antiphase domain density. The growth of this buffer is based on inducing interfacial misfit dislocations between an AlSb nucleation layer and the underlying silicon substrate, which results in a fully relaxed GaSb buffer. A 1 μm thick GaSb layer buffer grown on silicon has ~9.2 × 10 7 dislocations/cm 2 . The complete lack of strain in the epitaxial structure allows subsequent growths to be accurately lattice matched, thus making the approach ideal for use as a substrate. Here we characterize the GaSb-on-silicon wafer using high-resolution x-ray diffraction and transmission electron microscopy. The concept’s feasibility is demonstrated by growing interband cascade light emitting devices on the GaSb-on-silicon wafer. The performance of the resulting LEDs on silicon approaches that of counterparts grown lattice matched on GaSb.

36 MATERIALS SCIENCE↗