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At least 811 records · Page 45
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Advanced manufacturing of 3D custom boron-carbide collimators designed for complex environments for neutron scattering

Scattered-beam collimation is a very useful method to reduce unwanted backgrounds and to boost the desired sample signal instead. This approach is of particular interest for samples contained within a complex environment that gives rise to much unwanted parasitic scatter. As neutron scattering instrument and techniques advances, small samples are becoming of more and more interest, which necessitates optimized collimation. Here, in this work, we describe a concept for the design and fabrication of advanced scattered-beam collimation 3D printed from B 4 C specifically tailored for samples contained within a complex environment. This concept is demonstrated through the use of a diamond anvil cell for high pressure experimentation, a technique that very typically requires small samples. The collimators here are designed through a modeling procedure via Monte Carlo neutron ray tracing that encompasses the entire system: the instrument, the complex environment and the collimator. Since the first approach of simply scaling up of the print-size was not successful, a novel concept of a multi-part alternate-blade collimator was developed. This approach addresses printing constraints but gives greater flexibility in design. Its performance is computationally compared against an unprintable progressively tighter blade collimator to assess the effect of alternating blades. No strong difference was observed. Its performance was validated through experimentation at the Spallation Neutron Source. The results emphasize the critical importance of ultra-high precision alignment while showing good overall agreement between simulation and experiment and underscore the feasibility of the method and its real-world application.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

Hexagonal boron nitride: Epitaxial growth and device applications

As a newest family member of the III-nitrides, BN is considered amongst the remaining frontiers in wide energy bandgap semiconductors with potentials for technologically significant applications in deep UV (DUV) optoelectronics, solid-state neutron detectors, electron emitters, single photon emitters, switching/memory devices, and super-capacitors. It was shown that it is possible to produce h-BN epilayers with high hexagonal phase purity, UV transparency, and film stoichiometry by employing nitrogen-rich growth conditions. The quasi-2D nature of h-BN supports unusually strong optical transitions near the band edge and a large exciton binding energy on the order of 0.7 eV. Since the isotope of B-10 has a large capture cross-section for thermal neutrons, h-BN is an ideal material for the fabrication of solid-state neutron detectors for special nuclear materials detection, well and geothermal logging, and medical imaging applications. Freestanding B-10 enriched h-BN (h- 10 BN) epilayers with varying thicknesses up to 200 μm have been successfully synthesized by metal organic chemical vapor deposition (MOCVD) as of this writing. By utilizing the conductivity anisotropy nature of h-BN, 1 cm 2 lateral detectors fabricated from 100 μm thick h-10BN epilayers have demonstrated a detection efficiency of 59% for thermal neutrons, which is the highest on record among all solid-state neutron detectors as of today. It was noted that high growth temperatures, long growth times and the use of sapphire substrate tend to incorporate oxygen related impurities into h- 10 BN epilayers, which strongly impacted the carrier mobility-lifetime (μτ) products and charge collection efficiencies of h- 10 BN neutron detectors. As the h-BN material technology further develops, improved carrier mobilities and μτ products will allow the fabrication of h-BN devices with enhanced performance.

42 ENGINEERING↗