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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 811 records · Page 45
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

APOGEE-2S Mg–Al anti-correlation of the metal-poor globular cluster NGC 2298

We present detailed elemental abundances and radial velocities of stars in the metal-poor globular cluster (GC) NGC 2298, based on near-infrared high-resolution ($R$ ~ 22 500) spectra of 12 members obtained during the second phase of the Apache Point Observatory Galactic Evolution Experiment (APOGEE-2) at Las Campanas Observatory as part of the seventeenth Data Release (DR 17) of the Sloan Digital Sky Survey IV (SDSS-IV). We employed the Brussels Automatic Code for Characterizing High accuracy Spectra (BACCHUS) software to investigate abundances for a variety of species including α elements (Mg, Si, and Ca), the odd-Z element Al, and iron-peak elements (Fe and Ni) located in the innermost regions of NGC 2298. We find a mean and median metallicity [Fe/H] = -1.76 and -1.75, respectively, with a star-to-star spread of 0.14 dex, which is compatible with the internal measurement errors. Thus, we find no evidence for an intrinsic [Fe/H] abundance spread in NGC 2298. The typical $α$-element enrichment in NGC 2298 is overabundant relative to the Sun, and it follows the trend of other metal-poor GCs. We confirm the existence of an Al-enhanced population in this cluster, which is clearly anti-correlated with Mg, indicating the prevalence of the multiple-population phenomenon in NGC 2298.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2020

Symmetry tuning and high energy coupling for an Al capsule in a Au rugby hohlraum on NIF

Experiments on imploding an Al capsule in a Au rugby hohlraum with up to a 1.5 MJ laser drive were performed on the National Ignition Facility (NIF). The capsule diameter was 3.0 mm with ∼1 MJ drive and 3.4 mm with ∼1.5 MJ drive. Effective symmetry tuning by modifying the rugby hohlraum shape was demonstrated, and good shell symmetry was achieved for 3.4 mm capsules at a convergence of ∼10. The nuclear bang time and the shell velocity from simulations agree with experimental data, indicating ∼500 kJ coupling with 1.5 MJ drive or ∼30% efficiency. The peak velocity reached above 300 km/s for a 120 μm-thick Al capsule. The laser backscatter inside the low-gas-filled rugby hohlraum was very low (<4%) at both scales. The high energy coupling allows implosion designs with increased adiabat, which, in turn, increases the tolerance to detrimental effects of instabilities and asymmetries. These encouraging experimental results open new opportunities for both the mainline single-shell scheme and the double-shell design toward ignition.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Polyamorphism in a solute-lean Al–Ce metallic glass

Polyamorphism discovered in lanthanide-rich metallic glasses (MGs) has been attributed to the electronic transition of the lanthanide element as a solvent element. In this work, we report that pressure-induced polyamorphism still exists in a Ce-poor Al 93 Ce 7 binary MG where the 4f electron element serves as a solute and solute–solute avoidance is expected. The polyamorphic transition, observed by in situ high-pressure synchrotron x-ray diffraction, is accompanied by a volume collapse of ~0.78% and occurs over a narrow pressure range from ~0.8 to ~1.8 GPa. Further synchrotron Ce L 3 -edge x-ray absorption spectroscopy measurements reveal that pressure-induced 4f electron delocalization underlies the polyamorphic transition. Molecular dynamics simulations confirm that the Ce atoms in the MG are completely isolated by the solvent Al atoms. This result demonstrates that 4f element-bearing alloys with extremely dilute concentrations can also exhibit polyamorphic states originating from electronic transitions, extending the compositional space of polyamorphism of MGs into very dilute regions. Our work suggests that tunable properties under compressive stress could be achieved in MGs by even minor doping of elements prone to electronic transitions.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Breakdown characteristics of deep-ultraviolet Al 0.6 Ga 0.4 N p-i-n avalanche photodiodes

A top-illuminated deep-ultraviolet Al 0.6 Ga 0.4 N p-i-n avalanche photodiode (APD) structure was designed and grown by metalorganic chemical vapor deposition on an AlN bulk substrate and on two different quality AlN/sapphire templates, and APDs were fabricated and tested. The APD devices with a circular diameter of 20 μm have demonstrated a distinctive reverse-bias breakdown behavior. The reverse breakdown voltage of the APDs is approximately -140 V, which corresponds to a breakdown electric field of 6–6.2 MV/cm for the Al 0.6 Ga 0.4 N material as estimated by Silvaco TCAD simulation. The APDs grown on the AlN bulk substrate show the lowest leakage current density of < 1 × 10 -8 A/cm 2 (at low reverse bias) compared to that of the devices grown on the AlN templates. From the photocurrent measurement, a maximum gain (current limited) of 1.2 × 10 4 is calculated. The average temperature coefficients of the breakdown voltage are negative for APD devices fabricated from both the AlN bulk substrate and the AlN templates, but these data show that the coefficient is the least negative for the APD devices grown on the low-dislocation-density AlN bulk substrate.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Thermal stability of antiferroelectric-like Al:HfO 2 thin films with TiN or Pt electrodes

HfO 2 -based antiferroelectric-like thin films are increasingly being considered for commercial devices. However, even with initial promise, the temperature sensitivity of electrical properties such as loss tangent and leakage current remains unreported. 50 nm thick, 4 at. % Al-doped HfO 2 thin films were synthesized via atomic layer deposition with both top and bottom electrodes being TiN or Pt. A study of their capacitance vs temperature showed that the Pt/Al:HfO 2 /Pt had a relative dielectric permittivity of 23.30 ± 0.06 at room temperature with a temperature coefficient of capacitance (TCC) of 78 ± 86 ppm/°C, while the TiN/Al:HfO 2 /TiN had a relative dielectric permittivity of 32.28 ± 0.14 at room temperature with a TCC of 322 ± 41 ppm/°C. The capacitance of both devices varied less than 6% over 1 to 1000 kHz from –125 to 125 °C. Both capacitors maintained loss tangents under 0.03 and leakage current densities of 10 –9 –10 –7 A/cm 2 between –125 and 125 °C. The TiN/Al:HfO 2 /TiN capacitor maintained an energy storage density (ESD) of 18.17 ± 0.79 J/cm 3 at an efficiency of 51.79% ± 2.75% over the –125 to 125 °C range. The Pt/Al:HfO 2 /Pt capacitor also maintained a stable ESD of 9.83 ± 0.26 J/cm 3 with an efficiency of 62.87% ± 3.00% over the same temperature range. Finally, such low losses in both capacitors along with their thermal stability make antiferroelectric-like, Al-doped HfO 2 thin films a promising material for temperature-stable microelectronics.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Micro-strains, local stresses, and coherently diffracting domain size in shock compressed Al(100) single crystals

In situ x-ray diffraction (XRD) measurements and their analysis in Al single crystals shock compressed along the [100]-direction were utilized to examine shock wave induced microstructural heterogeneities. High-resolution XRD line profiles for the 200, 400, and 600 Al peaks were measured in uniaxial strain compression states to either 5.6 or 11.7 GPa and partial stress release to 3.5 or 6.6 GPa, respectively. Broadening of the XRD line profiles was analyzed to determine the magnitude of the longitudinal micro-strain distribution (0.195% and 0.28% full width at half maximum for 3.5 and 6.6 GPa stresses, respectively) and the size of coherently diffracting domains (CDDs) (0.125 and 0.07 μm for 3.5 and 6.6 GPa stresses, respectively). From the longitudinal micro-strain distributions, the distribution of local stress differences (or stress deviators) was obtained in the shocked state. The full width at half maximum of this distribution, a measure of the local stress inhomogeneities, is greater than half of the macroscopic stress difference for both 3.5 and 6.6 GPa peak stresses, suggesting considerable variation in local stress deviators. The CDD sizes determined here are comparable to characteristic length scales for defect-free regions determined from defect density measurements in post-shock recovery experiments. As a result, the present work represents an important step in understanding material microstructure and inhomogeneities in the shock-compressed state.

36 MATERIALS SCIENCE↗
DOE OSTI2022

A Landau–Devonshire analysis of strain effects on ferroelectric Al 1-x Sc x N

We present a thermodynamic analysis of the recently discovered nitride ferroelectric materials using the classic Landau–Devonshire approach. Electrostrictive and dielectric stiffness coefficients of Al 1-x Sc x N with a wurtzite structure (6 mm) are determined using a free energy density function assuming a hexagonal parent phase (6/mmm), with the first-order phase transition based on the dielectric stiffness relationships. The results of this analysis show that the strain sensitivity of the energy barrier is one order of magnitude larger than that of the spontaneous polarization in these wurtzite ferroelectrics, yet both are less sensitive to strain compared to classic perovskite ferroelectrics. These analysis results reported here explain experimentally reported sensitivity of the coercive field to elastic strain/stress in Al 1-x Sc x N films and would enable further thermodynamic analysis via phase field simulation and related methods.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Atomic isotropic hyperfine properties for second row elements (Al–Cl)

Isotropic hyperfine properties have been obtained for the second row elements Al–Cl using a systematic composite approach consisting of a sequence of core/valence correlation consistent basis sets, up through aug-cc-pCV7Z, along with configuration interaction and coupled cluster methods. The best nonrelativistic final values for the atomic ground states (in MHz) are -1.80 27 Al ( 2 P o 1/2 ), -24.31 29 Si ( 3 P 0 ), 63.70 31 P ( 4 So 3/2 ), 20.77 33 S ( 3 P 2 ), and 35.42 35 Cl ( 2 P o 3/2 ). We find a large K shell contribution to the spin density at the nucleus that is almost canceled by the L and M shell contributions. The spin density in atomic units is approximately linear with respect to the atomic number.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

ET-AL: Entropy-targeted active learning for bias mitigation in materials data

Growing materials data and data-driven informatics drastically promote the discovery and design of materials. While there are significant advancements in data-driven models, the quality of data resources is less studied despite its huge impact on model performance. In this work, we focus on data bias arising from uneven coverage of materials families in existing knowledge. Observing different diversities among crystal systems in common materials databases, we propose an information entropy-based metric for measuring this bias. To mitigate the bias, we develop an entropy-targeted active learning (ET-AL) framework, which guides the acquisition of new data to improve the diversity of underrepresented crystal systems. We demonstrate the capability of ET-AL for bias mitigation and the resulting improvement in downstream machine learning models. This approach is broadly applicable to data-driven materials discovery, including autonomous data acquisition and dataset trimming to reduce bias, as well as data-driven informatics in other scientific domains.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Mg and Al-induced phase transformation and stabilization of Ga 2 O 3 -based $\gamma$-phase spinels

Ga 2 O 3 films were deposited on (100) MgAl 2 O 4 spinel substrates at 550, 650, 750, and 850 °C using metal-organic chemical vapor deposition and investigated using x-ray diffraction and transmission electron microscopy. A phase-pure γ-Ga 2 O 3 -based material having an inverse spinel structure was formed at 850 °C; a mixture of the γ-phase and β-Ga 2 O 3 was detected in films grown at 750 °C. Only β-Ga 2 O 3 was determined in the films deposited at 650 and 550 °C. A β- to γ-phase transition occurred from the substrate/film interface during growth at 750 °C. The growth and stabilization of the γ-phase at the outset of film growth at 850 °C was affected by the substantial Mg and Al chemical interdiffusion from the MgAl 2 O 4 substrate observed in the energy-dispersive x-ray spectrum. Further, atomic-scale investigations via scanning transmission electron microscopy of the films grown at 750 and 850 °C revealed a strong tetrahedral site preference for Ga and an octahedral site preference for Mg and Al. It is postulated that the occupation of these atoms in these particular sites drives the β-Ga 2 O 3 to γ-phase transition and markedly enhances the thermal stability of the latter phase at elevated temperatures.

42 ENGINEERING↗
DOE OSTI2023

Plasma-assisted deposition and characterization of Al 2 O 3 dielectric layers on (001) β -Ga 2 O 3

In this work, we have investigated plasma-assisted deposition of Al 2 O 3 on HVPE (001) β-Ga 2 O 3 and evaluated the dielectric quality from electrical measurements on fabricated metal-oxide-semiconductor (MOS) capacitors. The interface structure and crystallinity of the films were investigated as a function of the growth temperature. The dielectric/semiconductor interfaces were found to have reverse breakdown electric fields up to 5.3 MV/cm in the β-Ga 2 O 3 , with relatively low hysteresis in capacitance–voltage and low leakage current. We determined a negative fixed interface charge density at the interface from analysis of thickness-dependent capacitance voltage data. In conclusion, this study shows the advantage of using plasma-assisted deposition to achieve high breakdown strength Al 2 O 3 /β-Ga 2 O 3 MOS structures for device application purposes.

42 ENGINEERING↗
DOE OSTI2023

An electron paramagnetic resonance study of the electron transport in heavily Si-doped high Al content AlxGa1−xN

High Al mole fraction AlGaN is an ultrawide bandgap semiconductor with potential applications in power electronics and deep UV detectors. Although n-type material is achievable with Si-doping, the role of Si is controversial, particularly for AlxGa1−xN with x > 0.8. For this paper, AlGaN films were grown by plasma-assisted molecular beam epitaxy onto bulk AlN substrates and doped with 1018–1020 cm−3 Si. We examine electron transport in heavily Si-doped AlxGa1−xN with x ≥ 0.65 using magnetic resonance, which allows us to probe the neutral donors directly rather than the free carriers and avoids complications due to electrical contacts. Transport was studied through the temperature-dependent linewidth of the electron paramagnetic resonance (EPR) signature for the neutral donor. Analysis shows evidence of hopping conductivity in the most lightly doped samples and impurity band formation in the most heavily doped ones. The EPR results, which are consistent with Hall measurements performed on the same samples, are promising for the development of highly conducting high Al content AlGaN.

Materials Science↗
DOE OSTI2024

Defect control strategies for Al 1- x Gd x N alloys

Tetrahedrally bonded III-N and related alloys are useful for a wide range of applications from optoelectronics to dielectric electromechanics. Heterostructural AlN-based alloys offer unique properties for piezoelectrics, ferroelectrics, and other emerging applications. Atomic-scale point defects and impurities can strongly affect the functional properties of materials, and therefore, it is crucial to understand the nature of these defects and the mechanisms through which their concentrations may be controlled in AlN-based alloys. In this study, we employ density functional theory with alloy modeling and point defect calculations to investigate native point defects and unintentional impurities in Al 1-x Gd x N alloys. Among the native defects that introduce deep midgap states, nitrogen vacancies (V N ⁠) are predicted to be in the highest concentration, especially under N-poor growth conditions. We predict and experimentally demonstrate that V N formation can be suppressed in thin films through growth in N-rich environments. We also find that Al 1-x Gd x N alloys are prone to high levels of unintentional O incorporation, which indirectly leads to even higher concentrations of deep defects. Growth under N-rich/reducing conditions is predicted to minimize and partially alleviate the effects of O incorporation. The results of this study provide valuable insights into the defect behavior in wurtzite nitride-based alloys, which can guide their design and optimization for various applications.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Increased thermal conductivity and decreased electron–phonon coupling factor of the aluminum scandium intermetallic phase (Al 3 Sc) compared to solid solutions

Aluminum scandium alloys and their intermetallic phases have arisen as potential candidates for the next generation of electrical interconnects. Here, in this work, we measure the in-plane thermal conductivity and electron–phonon coupling factor of aluminum scandium alloy thin films deposited at different temperatures, where the temperature is used to control the grain size and volume fraction of the Al 3 Sc intermetallic phase. As the Al 3 Sc intermetallic formation increases with higher deposition temperature, we measure increasing in-plane thermal conductivity and a decrease in the electron–phonon coupling factor, which corresponds to an increase in grain size. Our findings demonstrate the role that chemical ordering from the formation of the intermetallic phase has on thermal transport.

Chemical elements↗
DOE OSTI2025

Structural characterization of highly alloyed (Al,Gd)N thin films

Highly alloyed (Al,Gd)N is of potential interest in a variety of applications, including neutron detection and in devices such as non-volatile memory. Gd has been shown to have very low equilibrium solubility in AlN at room temperature; however, non-equilibrium deposition techniques such as sputtering are able to deposit thin films, which incorporate large amounts of Gd. Here, we characterize a highly-alloyed (Al,Gd)N combinatorial thin film grown by RF sputtering on a GaN substrate, looking for any evidence of chemical or phase segregation or structural disorder in the films. Compositions with between 13% and 32% Gd (on a cation basis) were studied. No evidence was found for chemical or phase segregation in any studied composition. Higher degrees of Gd incorporation led to greater structural disorder in the film and a tendency toward amorphization; however, electron diffraction shows that the film does not become fully amorphous at any of the studied compositions, instead retaining textured local order even at 32% Gd. Electron energy loss spectra suggest that the material retains a locally wurtzite-like tetrahedral bonding environment at all studied compositions.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Reduced thermal resistance of Al-rich AlGaN HEMTs via top-side diamond integration

We report back-end-of-line growth of nanocrystalline diamond (NCD) on ultrawide bandgap (UWBG) high Al content aluminum gallium nitride (AlGaN) channel high electron mobility transistors for thermal management. A thin (∼15 nm) silicon nitride (SiN x ) interlayer was deposited to protect the device surface before performing a low temperature (500 °C) NCD growth process in an attempt to protect the gates on these fully fabricated devices. Notably, atomic force microscopy showed that the maximum lateral grain size exceeded 300 nm even though the film thickness was ∼250 nm. Comparing electrical (DC) performance before and after NCD growth, the gate leakage increased by ∼10 2 after NCD growth. Despite the lower NCD growth temperature, intermixing of the Ni and Au was observed in the Schottky gate metal stack; however, we believe there is another mechanism, possibly hydrogen-related, that is responsible for the measured increase in gate leakage. Regarding thermal management, the device-level thermal resistance (quantified using the average gate temperature rise measured by thermoreflectance imaging) was reduced by 29% through the incorporation of the top-side diamond film. Using time-domain thermoreflectance, the thermal conductivity of the ≈250 nm thick NCD film was measured to be 45 ± 25 W m −1 K −1 . This is expected to be at least 5× greater than the thermal conductivity of the thin disordered AlGaN alloy. There could also be a coupled electrothermal component contributing to the reduced temperature rise from electric field spreading and consequent heat spreading. This study demonstrates a promising first step toward device-level thermal management of high power UWBG Al-rich AlGaN devices.

Lundh, James Spencer [U.S. Naval Research Laborato↗
DOE OSTI2026

Investigating shock-induced chemical reactions in Ni+Al multilayers: A continuum-based mesoscale approach with Arrhenius kinetics and artificial thermal conduction

A new continuum-based mesoscale modeling approach for shock-induced chemical reactions (SICRs) in Ni+Al multilayers is demonstrated in Sandia’s shock physics hydrocode, CTH. The approach utilizes Arrhenius-type kinetics and artificial thermal conduction. Our work builds upon previous efforts to parameterize equations of state for Ni x Al y [J. Appl. Phys. 137, 075102 (2025)], as well as simulations of inert shocks in realistic 2D microstructures [J. Appl. Phys. 137, 225301 (2025)]. To calibrate the reaction kinetics, pairs of the reaction coordinate, R′, vs time are extracted from the molecular dynamics (MD) literature. Here, the MD-informed kinetics are used to simulate the dynamic evolution of pressure and temperature in 2D mesoscale simulations. Overall, the MD-informed kinetics obtained for planar interfaces are too slow, as initial reaction is not observed on a nanosecond time scale. Even with quasi-periodic shock focusing leading to the formation of so-called “hot-spots,” the hot spots are unable to grow and coalesce using the fitted Arrhenius rate constants. However, by increasing the rate constants by two orders of magnitude, SICRs are observed at a shock pressure near 30 GPa, which is supported by experiments. Consequently, these mesoscale simulations suggest that unresolved shear-based mechanical mixing might possibly account for the discrepancies in kinetic rates, with shock-generated intense perturbations, interfacial vortical flows, and elevated temperatures serving as favorable reaction conditions. Future work will calibrate a shear-dependent reaction rate from the MD simulations with realistic interfaces that are wavy, diffuse, and disordered.

Kittell, David E. [Sandia National Laboratories (S↗
DOE OSTI2020

Ultrahigh strength and plasticity in laser rapid solidified Al–Si nanoscale eutectics

As-cast Al–20wt.% Si alloys were processed via laser rapid solidification (LRS) techniques to create eutectic microstructures with nanoscale interconnected, nanotwinned Si fibers. LRS morphologies exhibit higher flow stress, exceeding 800 MPa and uniform plastic deformation above 20% compared to as-cast alloy that fractures at strains below 8% at flow strength of approximately 200 MPa. The strengthening mechanisms of LRS morphologies are interpreted in terms of the interfacial constraints: increase in yield strength as well as strain hardening rate due to nanoscale confined slip in fibrous Al–Si eutectic, and load transfer and eventual plasticity in the nanoscale Si fibers.

36 MATERIALS SCIENCE↗