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At least 793 records · Page 44
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

DECAF Cross-device characterization of tokamak disruptions indicated by abnormalities in plasma vertical position and current

Abnormal (deviating from target) variations in the plasma vertical position Z and current I p (such as vertical displacements, transient I p 'spikes' and quenches) constitute common elements of a disruption, a phenomenon that is to be mitigated, or ultimately avoided in future reactor-relevant tokamaks. While those abnormalities are generally recognized cross-shot and cross-device, details in terms of appearance (or not) and order of those abnormalities in disruption event chains is bound with the plasma state at the time of the chain initiation. Detection of those abnormalities is thus indicative not only of the onset of the plasma collapse itself, but also of the disruption driving cause that is promoted at the particular plasma state. Here, occurrence of disruptions, explored via detection of a Ip quench, and analysis of disruption event chains constituted by Ip and Z abnormalities, is reported for in total 7 full years of operation of 3 devices (KSTAR, MAST-U and NSTX-U) using the DECAFTM code expanded tools and capabilities. It is shown that the disruption occurrence depends not only on details of the plasma state, but also on (device-dependent) technical elements of the shot exit scenario. A year-to-year change in main disruption causes and a reduction of the disruptivity rate, bound with device and operation upgrades, are reported. Particular trigger instances of disruption event chains (and the full chains, when applicable) are shown to occupy different parts of the operation space diagrams, in accordance with prior expectation. Plasma elongation is identified as an important factor influencing details of the chains and its role will be further explored.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Roles of non-axisymmetric perturbations in free drift vertical displacement events on EAST

Abstract The safe operation of most tokamaks, especially the large ones, relies on the feedback control of vertical displacement events (VDEs). However, most of these feedback control systems are based on axisymmetric VDE models. In this study, we use NIMROD simulations to study the role of non-axisymmetric perturbations in free drift vertical displacement events on EAST. The high- n modes in the non-axisymmetric VDE grow first, which drives the formation of high- n magnetic island chains. Subsequently, the magnetic island chains grow and overlap with each other, leading to the destruction of the magnetic flux surface, which induces a minor disruption and accelerates the start of the following major disruption. The magnetic island and the stochastic magnetic field allow the toroidally non-axisymmetric poloidal plasma current to jet towards the hoop force direction, forming finger-like and filamentary structures. Such a plasma current non-axisymmetry strongly depends on the anisotropy in the thermal transport coefficients.

Physics↗
DOE OSTI2015

Design and testing of the first 2D Prototype Vertically Integrated Pattern Recognition Associative Memory

An associative memory-based track finding approach has been proposed for a Level 1 tracking trigger to cope with increasing luminosities at the LHC. The associative memory uses a massively parallel architecture to tackle the intrinsically complex combinatorics of track finding algorithms, thus avoiding the typical power law dependence of execution time on occupancy and solving the pattern recognition in times roughly proportional to the number of hits. This is of crucial importance given the large occupancies typical of hadronic collisions. The design of an associative memory system capable of dealing with the complexity of HL-LHC collisions and with the short latency required by Level 1 triggering poses significant, as yet unsolved, technical challenges. For this reason, an aggressive R&D program has been launched at Fermilab to advance state of-the-art associative memory technology, the so called VIPRAM (Vertically Integrated Pattern Recognition Associative Memory) project. The VIPRAM leverages emerging 3D vertical integration technology to build faster and denser Associative Memory devices. The first step is to implement in conventional VLSI the associative memory building blocks that can be used in 3D stacking, in other words, the building blocks are laid out as if it is a 3D design. In this paper, we report on the first successful implementation of a 2D VIPRAM demonstrator chip (protoVIPRAM00). The results show that these building blocks are ready for 3D stacking.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

VERTICAL KINK OSCILLATION OF A MAGNETIC FLUX ROPE STRUCTURE IN THE SOLAR CORONA

Vertical transverse oscillations of a coronal magnetic rope, observed simultaneously in the 171 Å and 304 Å bandpasses of the Atmospheric Imaging Assembly on board the Solar Dynamics Observatory (SDO), are detected. The oscillation period is about 700 s and the displacement amplitude is about 1 Mm. The oscillation amplitude remains constant during the observation. Simultaneous observation of the rope in the bandpasses corresponding to the coronal and chromospheric temperatures suggests that it has a multi-thermal structure. Oscillatory patterns in 171 Å and 304 Å are coherent, which indicates that the observed kink oscillation is collective, in which the rope moves as a single entity. We interpret the oscillation as a fundamental standing vertically polarized kink mode of the rope, while the interpretation in terms of a perpendicular fast wave could not be entirely ruled out. In addition, the arcade situated above the rope and seen in the 171 Å bandpass shows an oscillatory motion with the period of about 1000 s.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2015

EFFECTS OF NITROGEN PHOTOABSORPTION CROSS SECTION RESOLUTION ON MINOR SPECIES VERTICAL PROFILES IN TITAN’S UPPER ATMOSPHERE

The significant variations in both measured and modeled densities of minor species in Titan’s atmosphere call for the evaluation of possible influencing factors in photochemical modeling. The effect of nitrogen photoabsorption cross section selection on the modeled vertical profiles of minor species is analyzed here, with particular focus on C{sub 2}H{sub 6} and HCN. Our results show a clear impact of cross sections used on all neutral and ion species studied. Affected species include neutrals and ions that are not primary photochemical products, including species that do not even contain nitrogen. The results indicate that photochemical models that employ low-resolution cross sections may significantly miscalculate the vertical profiles of minor species. Such differences are expected to have important implications for Titan’s overall atmospheric structure and chemistry.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2021

Layer and material-type dependent photoresponse in Se 2 /WS 2 vertical heterostructures

Transition metal dichalcogenide (TMD) heterostructures are promising for a variety of applications in photovoltaics and photosensing. Successfully exploiting these heterostructures will require an understanding of their layer-dependent electronic structures. However, there is no experimental data demonstrating the layer-number dependence of photovoltaic effects (PVEs) in vertical TMD heterojunctions. Here, by combining scanning electrochemical cell microscopy (SECCM) with optical probes, we report the first layer-dependence of photocurrents in WSe 2 /WS 2 vertical heterostructures as well as in pristine WS 2 and WSe 2 layers. For WS 2 , we find that photocurrents increase with increasing layer thickness, whereas for WSe 2 the layer dependence is more complex and depends on both the layer number and applied bias (V b ). Further, we find that photocurrents in the WSe 2 /WS 2 heterostructures exhibit anomalous layer and material-type dependent behaviors. Our results advance the understanding of photoresponse in atomically thin WSe 2 /WS 2 heterostructures and pave the way to novel nanoelectronic and optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Characterization of the Vertical Evolution of the Three-Dimensional Turbulence for Fatigue Design of Tidal Turbines

A system of two coupled four-beam acoustic Doppler current profilers was used to collect turbulence measurements over a 36-h period at a highly energetic tidal energy site in Alderney Race. This system enables the evaluation of the six components of the Reynolds stress tensor throughout a large proportion of the water column. The present study provides mean vertical profiles of the velocity, the turbulence intensity and the integral lengthscale along the streamwise, spanwise and vertical direction of the tidal current.

Alderney Race↗
DOE OSTI2022

Improved Vertical Carrier Transport for Green III-Nitride LEDs Using ( In , Ga ) N Alloy Quantum Barriers

We report on experimental and simulation-based results using ( In , Ga ) N alloy quantum barriers in c -plane green light-emitting diode (LED) structures as a means to improve vertical carrier transport and reduce forward voltage ( V F ) . Three-dimensional device simulations that include random alloy fluctuations are used to understand carrier behavior in a disordered potential. The simulated current density–voltage ( J - V ) characteristics and modified electron-hole overlap | F mod | 2 indicate that increasing the indium fraction in the ( In , Ga ) N quantum barriers leads to a reduced polarization discontinuity at the interface between the quantum barrier and quantum well, thereby reducing V F and improving | F mod | 2 . Maps of electron and hole current through the device show a relatively homogenous distribution in the X Y plane for structures using Ga N quantum barriers; in contrast, preferential pathways for vertical transport are identified in structures with ( In , Ga ) N barriers as regions of high and low current. A positive correlation between hole (electron) current in the p -side ( n -side) barrier and indium fraction reveals that preferential pathways exist in regions of high indium content. Furthermore, a negative correlation between the strain ε z z and indium fraction shows that high indium content regions have reduced strain-induced piezoelectric polarization in the Z direction due to the mechanical constraint of the surrounding lower indium content regions. Experimentally, multiple quantum well green LEDs with ( In , Ga ) N quantum barriers exhibit lower V F and blue-shifted wavelengths relative to LEDs with Ga N quantum barriers, consistent with simulation data. These results can be used to inform heterostructure design of low V F , long-wavelength LEDs and provide important insight into the nature of carrier transport in III-nitride alloy materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Search for long-lived particles decaying to jets with displaced vertices in proton-proton collisions at √ s = 13 TeV

A search is presented for long-lived particles produced in pairs in proton-proton collisions at the LHC operating at a center-of-mass energy of 13 TeV . The data were collected with the CMS detector during the period from 2015 through 2018, and correspond to a total integrated luminosity of 140 fb –1 . This search targets pairs of long-lived particles with mean proper decay lengths between 0.1 and 100 mm , each of which decays into at least two quarks that hadronize to jets, resulting in a final state with two displaced vertices. No significant excess of events with two displaced vertices is observed. In the context of R-parity violating supersymmetry models, the pair production of long-lived neutralinos, gluinos, and top squarks is excluded at 95% confidence level for cross sections larger than 0.08 fb, masses between 800 and 3000 GeV, and mean proper decay lengths between 1 and 25 mm.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2018

Search for long-lived particles with displaced vertices in multijet events in proton-proton collisions at s = 13 TeV

Results are reported from a search for long-lived particles in proton-proton collisions at √s=13 TeV delivered by the CERN LHC and collected by the CMS experiment. The data sample, which was recorded during 2015 and 2016, corresponds to an integrated luminosity of 38.5 fb -1 . This search uses benchmark signal models in which long-lived particles are pair-produced and each decays into two or more quarks, leading to a signal with multiple jets and two displaced vertices composed of many tracks. No events with two well-separated high-track-multiplicity vertices are observed. Upper limits are placed on models of R-parity violating supersymmetry in which the long-lived particles are neutralinos or gluinos decaying solely into multijet final states or top squarks decaying solely into dijet final states. For neutralino, gluino, or top squark masses between 800 and 2600 GeV and mean proper decay lengths between 1 and 40 mm, the analysis excludes cross sections above 0.3 fb at 95% confidence level. Gluino and top squark masses are excluded below 2200 and 1400 GeV, respectively, for mean proper decay lengths between 0.6 and 80 mm. A method is provided for extending the results to other models with pair-produced long-lived particles.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2018

Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned L a 2 / 3 S r 1 / 3 Mn O 3 : ZnO nanopillar composites

Magnetoresistive random-access memory (MRAM) is poised to become a next-generation information storage device. Yet, many materials challenges remain unsolved before it can become a widely used memory storage solution. Among them, an urgent need is to identify a material system that is suitable for downscaling and is compatible with low-power logic applications. Self-assembled, vertically aligned La 2/3 Sr 1/3 MnO 3 : ZnO nanocomposites, in which La 2/3 Sr 1/3 MnO 3 (LSMO) matrix and ZnO nanopillars form an intertwined structure with coincident-site-matched growth occurring between the LSMO and ZnO vertical interfaces, may offer new MRAM applications by combining their superior electric, magnetic ( B ), and optical properties. Here, in this Rapid Communication, we show the results of electrical current induced magnetic hysteresis in magnetoresistance measurements in these nanopillar composites. We observe that when the current level is low, for example, 1 µA, the magnetoresistance displays a linear, negative, nonhysteretic B field dependence. Surprisingly, when a large current is used, I > 10 µA, a hysteretic behavior is observed when the B field is swept in the up and down directions. This hysteresis weakens as the sample temperature is increased. Finally, a possible spin-valve mechanism related to this electrical current induced magnetic hysteresis is proposed and discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Supervised Learning-Based Spatial Position Estimation with Vertical Displacement for Hovering UAV Wireless Power Transfer

This study presents a supervised learning-based spatial position estimation approach for wireless power transfer (WPT) systems supporting hovering unmanned aerial vehicle (UAV) charging. Unlike stationary charging scenarios, hovering UAVs introduce continuous lateral misalignment and vertical displacement, leading to variations in magnetic coupling and reduced power transfer efficiency. To address this challenge, the proposed method estimates the relative spatial position of the receiver coil using only electrical measurements obtained at the secondary side. A supervised learning model is trained to map output voltage and current features to spatial coordinates, enabling position awareness without requiring external sensors, vision systems, or communication links. The sensing functionality is inherently integrated into the WPT system, allowing simultaneous power transfer and localization through the same magnetic interface. Experimental validation is conducted on a laboratory-scale prototype under varying lateral offsets and air-gap conditions. In addition, spline-based interpolation is employed to increase spatial data density for training. The results demonstrate that the proposed framework can capture spatial variations associated with both lateral and vertical displacement, providing reliable position estimation under hovering conditions. This work establishes a hardware-efficient, sensorless solution for UAV wireless charging and serves as a baseline for advanced data-driven position estimation methods in dynamic WPT systems.

Asa, Erdem [ORNL] (ORCID:0000000190884812)↗
DOE OSTI2023

1 kV Self-Aligned Vertical GaN Superjunction Diode

This work demonstrates vertical GaN superjunction (SJ) diodes fabricated via a novel self-aligned process. The SJ comprises n-GaN pillars wrapped by the charge-balanced p-type nickel oxide (NiO). After the NiO sputtering around GaN pillars, the self-aligned process exposes the top pillar surfaces without the need for additional lithography or a patterned NiO etching which is usually difficult. The GaN SJ diode shows a breakdown voltage (B V) of 1100 V, a specific on-resistance (R ON ) of 0.4 mΩ· cm2, and a SJ drift-region resistance ( R dr ) of 0.13 mΩ· cm2. Further, the device also exhibits good thermal stability with B V retained over 1 kV and R ON dropped to 0.3 mΩ· cm2 at 125°C. The trade-off between B V and R dr is superior to the 1D GaN limit. These results show the promise of vertical GaN SJ power devices. The self-aligned process is applicable for fabricating the heterogeneous SJ based on various wide- and ultra-wide bandgap semiconductors.

42 ENGINEERING↗
DOE OSTI2025

Robust Avalanche (1.5 kV, 2 kA/cm²) in Vertical GaN Diodes on Patterned Sapphire Substrate

The lack of avalanche capability is a key limitation of current lateral GaN devices. Despite the report of avalanche in vertical GaN-on-GaN devices, the high wafer cost hinders device commercialization. Here, in this work, we demonstrate a circuit-level avalanche in vertical GaN diodes on low-cost patterned sapphire substrate (PSS), with the avalanche voltage (1.57 kV) and avalanche current density (>2 kA/cm 2 ) both being the highest reported in GaN devices on foreign substrates. The PSS enables a lower dislocation density than conventional sapphire substrate and is employed in high-voltage GaN devices for the first time. The avalanche voltage in the circuit test reaches 98% of the parallel-plane limit, further affirming that near-ideal avalanche breakdown can be realized on GaN devices on foreign substrates. These results show the promise of the GaN-on-PSS platform for low-cost, robust power devices.

42 ENGINEERING↗
DOE OSTI2013

Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

Power conversion losses are endemic in all areas of electricity consumption, including motion control, lighting, air conditioning, and information technology. Si, the workhorse of the industry, has reached its material limits. Increasingly, the lateral AlGaN/GaN HEMT based on gallium nitride (GaN-on-Si) is becoming the device of choice for medium power electronics as it enables high-power conversion efficiency and reduced form factor at attractive pricing for wide market penetration. The reduced form factor enabled by high-efficiency operation at high frequency further enables significant system price reduction because of savings in bulky extensive passive elements and heat sink costs. The high-power market, however, still remains unaddressed by lateral GaN devices. The current and voltage demand for high power conversion application makes the chip area in a lateral topology so large that it becomes more difficult to manufacture. Vertical GaN devices would play a big role alongside of silicon carbide (SiC) to address the high power conversion needs. In this paper, the development, performance, and status of lateral and vertical GaN devices are discussed.

Chowdhury, S↗
DOE OSTI2023

Implanted Guard Ring Edge Termination With Avalanche Capability for Vertical GaN Devices

Edge termination is the key building block in power devices to enable near-ideal, avalanche breakdown voltage (BV). Here, this work presents the design, fabrication, and physics of a GaN guard ring (GR) edge termination formed by selective-area nitrogen implantation through an epitaxial p-GaN layer. The fabrication of this termination only includes a single implantation step that does not require precise control of implant depth, rendering a large process latitude. The selective-area implantation produces p-GaN rings that are separated by the implanted, semi-insulating regions. The number and spacing of the p-type rings are found to determine the BV of the vertical GaN p-n diode. The 16-ring structure enables a BV of 1800 V, being 88% of the theoretical 1-D parallel-plane limit. Avalanche characteristics are observed in devices with a large variety of GR designs. Finally, we present a comprehensive survey on the efficiency, fabrication complexity, real estate, and avalanche capability of various edge termination techniques that have been reported in vertical GaN devices. The high efficiency (among the highest reported in avalanche-capable GaN terminations), simple and robust fabrication process, and uniform avalanche capability make this implanted GR a promising edge termination for high-voltage GaN devices.

42 ENGINEERING↗
DOE OSTI2014

Influence of seed layers on the vertical growth of ZnO nanowires by low-temperature wet chemical bath deposition on ITO-coated glass substrate

Aligned ZnO nanowires (NWs) were synthesized by low-temperature wet chemical bath deposition (CBD) technique on indium tin oxide (ITO)-coated glass substrates using c-axis orientated ZnO and AZO (Al-doped ZnO) seed layers through the RF sputtering deposition process under different conditions. The growth direction of ZnO NW was controlled by using the two different seed layers. Results showed single-crystalline structure of the ZnO NWs with the highest peak intensity in (002) crystalline direction. In addition, NWs seeding form AZO layer, grown on ITO coated glass, were vertically aligned and uniformly distributed on the substrate. The effects of precursor concentration, growth temperature, and seed layer on NW morphology were investigated in two different seed layers systematically. The intensity of broad emissions at 500–600 nm emission was observed in room temperature photoluminescence (PL) spectra for samples prepared under optimized parameters. In addition, the green emission intensity of ZnO NWs growth on the ZnO seed layer was much weaker than that of AZO seed layer. The experimental results indicate that the selection of seed layers, precursor concentration, and the growth temperature are key parameters to vertical growth of NWs for the application of nanoscale devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

Optimization of a chlorine-based deep vertical etch of GaN demonstrating low damage and low roughness

The dry etching of GaN to form deep vertical structures is a critical step in many power device processes. To accomplish this, a chlorine and argon etch is investigated in detail to satisfy several criteria simultaneously such as surface roughness, crystal damage, and etch angle. Etch depths from 2 to 3.4 μm are shown in this paper. The authors investigate the formation of etch pits and its contributing factors. In addition, a nickel hard mask process is presented, with an investigation into the causes of micromasking and a pre-etch to prevent it. The authors show the results of optimized etch conditions resulting in a 2 μm deep, 0.831 nm rms roughness etch, with a 7.6° angle from vertical and low surface damage as measured by photoluminescence.

Tahhan, Maher↗