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At least 793 records · Page 44
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Unraveling the Nature of Lasing Emission from Hybrid Silicon Nitride and Colloidal Nanocrystal Photonic Crystals with Low Refractive Index Contrast

Silicon nitride is used for its low optical loss and high thermal stability, making it a suitable platform for visible-light applications in integrated photonic devices. However, its application has been limited due to inefficient light emission, a problem addressed by integrating various types of light emitters onto the platform. In particular, the integration of solution-processable colloidal nanocrystals (NCs) as optical gain materials onto the silicon nitride platform is a promising route but requires a more solid theoretical footing. By leveraging 2D surface-emitting photonic crystal structures combined with NCs, we effectively confine and manipulate light to achieve lasing from green to red. Building on this, we model the light–matter interactions of the low index contrast NC/nitride platform, validated by extensive experimental validations through Fourier imaging techniques, revealing the full photonic band structure and showing clear mode congestion. Finally, these comprehensive studies confirm the potential of hybrid NC-based structures for fully integrated on-chip laser applications and indicate routes for further improvement.

BIC Lasing↗
DOE OSTI2014

Controlling the size and optical properties of ZnO nanoparticles by capping with SiO{sub 2}

Graphical abstract: - Highlights: • Small and uniform sized ZnO nanoparticles were obtained with SiO{sub 2} coating. • ZnO and ZnO–SiO{sub 2} nanocomposite exhibited excitation wavelength dependent PL. • Maximum UV emission intensity was obtained with 353 nm excitation wavelength. • Excitation processes in SiO{sub 2} were also contributed to the UV intensity. • It was found that oxygen vacancies and interstitials enhanced with SiO{sub 2} coating. - Abstract: The size and shape of the ZnO nanoparticles synthesized through sol–gel method were controlled by capping with SiO{sub 2}. X-ray diffraction (XRD) and field emission scanning electron microscope (FE-SEM) and High Resolution Transmission Electron Microscope (HR-TEM) results demonstrated that the particle growth of the ZnO nanoparticles has been restricted to 5 nm with SiO{sub 2} capping. As a result, the absorption spectra of ZnO nanoparticles capped with SiO{sub 2} got blue shifted (toward lower wavelength side) due to strong quantum confinement effects. BET (Brunauer–Emmet–Teller) surface area pore size analyzer results showed that surface area of samples increased monotonously with increase of SiO{sub 2} concentration. It was observed that the absorption spectra of ZnO capped with SiO{sub 2} broadened with increase of SiO{sub 2} concentration. Absorption and photoluminescence excitation results (PLE) confirmed that this broadening is due to the absorption of non-bridging oxygen hole centers (NBOHC) of SiO{sub 2}. These results also indicated that ZnO nanoparticles capped with SiO{sub 2} are insensitive to Raman scattering. Maximum UV emission intensity was achieved with 353 nm excitation wavelength compared to 320 nm in ZnO as well as in SiO{sub 2} capped ZnO nanoparticles. Furthermore, there is an enhancement in the intensities of emission peaks related to oxygen vacancies and interstitials with SiO{sub 2} capping. The enhancement in the UV intensity is attributed to the surface passivation of ZnO nanoparticles and excitation processes in SiO{sub 2}.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Type I clathrates as novel silicon anodes: An electrochemical and structural investigation

In this study, silicon clathrates contain cage-like structures that can encapsulate various guest atoms or molecules. Here we present an electrochemical evaluation of type I silicon clathrates based on Ba 8 Al y Si 46-y for the anode material in lithium-ion batteries. Post-cycling characterization with NMR and XRD show no discernible structural or volume changes even after electrochemical insertion of 44 Li into the clathrate structure. The observed properties are in stark contrast with lithiation of other silicon anodes, which become amorphous and suffer from larger volume changes. The lithiation/delithiation processes are proposed to occur in single phase reactions at approximately 0.2 and 0.4 V vs. Li/Li + , respectively, distinct from other diamond cubic or amorphous silicon anodes. Reversible capacities as high as 499 mAh g -1 at a 5 mA g -1 rate were observed for silicon clathrate with composition Ba 8 Al 8.54 S i37.46 , corresponding to Li:Si of 1.18:1. The results show that silicon clathrates could be promising durable anodes for lithium-ion batteries.

36 MATERIALS SCIENCE↗
DOE OSTI2025

A Preferences Corpus and Annotation Scheme for Human-Guided Alignment of Time-Series GPTs

The process of time-series forecasting such as predicting trajectories of silicon content in blast furnaces is a difficult task. Most time-series approaches today focus on scalar-type MSE loss optimization. This optimization approach, while widely common, could benefit from the use of human expert or process-level preferences. In this paper, we introduce a novel alignment and fine-tuning approach that involves learning from a corpus of preferred and dis-preferred time-series prediction trajectories. Our contributions include (1) a preference annotation pipeline for time-series forecasts, (2) the application of Score-based Preference Optimization (SPO) to train decoder-only transformers from preferences, and (3) results showing improvements in forecast quality. The approach is validated on both proprietary blast furnace data and the UCI Appliances Energy dataset. The proposed preference corpus and training strategy offer a new option for fine-tuning sequence models in industrial settings.

DPO↗
DOE OSTI2016

Proton Reduction Using a Hydrogenase-Modified Nanoporous Black Silicon Photoelectrode

Metalloenzymes featuring earth-abundant metal-based cores exhibit rates for catalytic processes such as hydrogen evolution comparable to those of noble metals. Realizing these superb catalytic properties in artificial systems is challenging owing to the difficulty of effectively interfacing metalloenzymes with an electrode surface in a manner that supports efficient charge-transfer. Here, we demonstrate that a nanoporous 'black' silicon (b-Si) photocathode provides a unique interface for binding an adsorbed [FeFe]-hydrogenase enzyme ([FeFe]-H2ase). The resulting [FeFe]-H2ase/b-Si photoelectrode displays a 280 mV more positive onset potential for hydrogen generation than bare b-Si without hydrogenase, similar to that observed for a b-Si/Pt photoelectrode at the same light intensity. Additionally, we show that this H2ase/b-Si electrode exhibits a turnover frequency of >/=1300 s-1 and a turnover number above 107 and sustains current densities of at least 1 mA/cm2 based on the actual surface area of the electrode (not the smaller projected geometric area), orders of magnitude greater than that observed for previous enzyme-catalyzed electrodes. While the long-term stability of hydrogenase on the b-Si surface remains too low for practical applications, this work extends the proof-of-concept that biologically derived metalloenzymes can be interfaced with inorganic substrates to support technologically relevant current densities.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Fabrication and characterization of large arrays of mesoscopic gold rings on large-aspect-ratio cantilevers

We have fabricated large arrays of mesoscopic metal rings on ultrasensitive cantilevers. The arrays are defined by electron beam lithography and contain up to 10{sup 5} rings. The rings have a circumference of 1 μm, and are made of ultrapure (6N) Au that is deposited onto a silicon-on-insulator wafer without an adhesion layer. Subsequent processing of the SOI wafer results in each array being supported at the end of a free-standing cantilever. To accommodate the large arrays while maintaining a low spring constant, the cantilevers are nearly 1 mm in both lateral dimensions and 100 nm thick. The extreme aspect ratio of the cantilevers, the large array size, and the absence of a sticking layer are intended to enable measurements of the rings' average persistent current in the presence of relatively small magnetic fields. We describe the motivation for these measurements, the fabrication of the devices, and the characterization of the cantilevers' mechanical properties. We also discuss the devices' expected performance in measurements of .

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2011

Micromachined cutting blade formed from {211}-oriented silicon

A cutting blade is disclosed fabricated of micromachined silicon. The cutting blade utilizes a monocrystalline silicon substrate having a {211} crystalline orientation to form one or more cutting edges that are defined by the intersection of {211} crystalline planes of silicon with {111} crystalline planes of silicon. This results in a cutting blade which has a shallow cutting-edge angle .theta. of 19.5.degree.. The micromachined cutting blade can be formed using an anisotropic wet etching process which substantially terminates etching upon reaching the {111} crystalline planes of silicon. This allows multiple blades to be batch fabricated on a common substrate and separated for packaging and use. The micromachined cutting blade, which can be mounted to a handle in tension and optionally coated for increased wear resistance and biocompatibility, has multiple applications including eye surgery (LASIK procedure).

36 MATERIALS SCIENCE↗
DOE OSTI2016

Bench Scale Process for Low Cost CO2 Capture Using a Phase-Changing Absorbent: Topical Report EH&S Risk Assessment

GE Global Research was contracted by the Department of Energy to design and build a bench-scale process for a novel phase-changing aminosilicone-based CO2 capture solvent (award number DEFE0013687). As part of this program, a technology EH&S assessment (Subtask 5.1) has been completed for a CO2 capture system for a 550 MW coal-fired power plant. The assessment focuses on two chemicals used in the process, the aminosilicone solvent, GAP-0, and dodecylbenzenesulfonic acid (DDBSA), the GAP-0 carbamate formed upon reaction of the GAP-0 with CO2, and two potential byproducts formed in the process, GAP-0/SOx salts and amine-terminated, urea-containing silicone (also referred to as “ureas” in this report). The EH&S assessment identifies and estimates the magnitude of the potential air and water emissions and solid waste generated by the process and reviews the toxicological profiles of the chemicals associated with the process. Details regarding regulatory requirements, engineering controls, and storage and handling procedures are also provided in the following sections.

20 FOSSIL-FUELED POWER PLANTS↗
DOE OSTI2014

Behavior of microwave-heated silicon carbide particles at frequencies of 2.0–13.5 GHz

Silicon carbide is a key material in microwave (MW) processing and is used widely as a thermal insulator and catalytic agent. In this study, we experimentally investigated the temperature dependence of the MW-absorption properties of SiC particles at frequencies of 2.0–13.5 GHz. We heated SiC particles of different sizes using MW radiation. The heating behaviors of the particles were then compared with their MW-absorption properties. The heating behavior of the particles was dependent on their radii; this result was in keeping with theoretical predictions. Furthermore, the β-SiC particles exhibited anomalous behaviors when subjected to microwave heating at temperatures of 1100 °C and higher. These behaviors were attributable to the transformation of β-SiC into the α-phase. The underlying mechanism for this transformation is discussed on the basis of the results of X-ray diffraction analysis.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Hydrogen enhances the radiation resistance of amorphous silicon oxycarbides

Here, we use first principles molecular dynamics to investigate unit displacement processes in amorphoussilicon oxycarbides (SiOC) and demonstrate that the introduction of hydrogen (H) into these materialsenhances their radiation resistance. Our simulations show that 100 eV knock-ons in H-free SiOC redistribute C through the formation of CeO and CeC bonds. H counteracts this trend by passivating dangling O bonds and preventing C from coming out of solution. This effect arises from the exceptionally high mobility of H, which leads to the saturation of radiation-induced O and C radicals even before the thermal-spike induced by a high-energy knock-on dies down. Our work suggests that fully hydrogenated SiOC is a promising radiation-resistant material for future nuclear energy applications.

08 HYDROGEN↗
DOE OSTI2015

Pre-strain effect on frequency-based impact energy dissipation through a silicone foam pad for shock mitigation [Pre-strain effect on the frequency response of shock mitigation through a silicone foam pad]

Silicone foams have been used in a variety of applications from gaskets to cushioning pads over a wide range of environments. Particularly, silicone foams are used as a shock mitigation material for shock and vibration applications. Understanding the shock mitigation response, particularly in the frequency domain, is critical for optimal designs to protect internal devices and components more effectively and efficiently. The silicone foams may be subjected to pre-strains during the assembly process which may consequently influence the frequency response with respect to shock mitigation performance. A Kolsky compression bar was modified with pre-compression capabilities to characterize the shock mitigation response of silicone foam in the frequency domain to determine the effect of pre-strain. Lastly, a silicone sample was also intentionally subjected to repeated pre-strain and dynamic loadings to explore the effect of repeated loading on the frequency response of shock mitigation.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Hybrid Metrology and 3D-AFM Enhancement for CD Metrology Dedicated to 28 nm Node and Below Requirements

The measurement accuracy is becoming one of the major components that have to be controlled in order to guarantee sufficient production yield. Already at the R and D level, we have to come up with the accurate measurements of sub-40 nm dense trenches and contact holes coming from 193 immersion lithography or E-Beam lithography. Current production CD (Critical Dimension) metrology techniques such as CD-SEM (CD-Scanning Electron Microscope) and OCD (Optical Critical Dimension) are limited in relative accuracy for various reasons (i.e electron proximity effect, outputs parameters correlation, stack influence, electron interaction with materials...). Therefore, time for R and D is increasing, process windows degrade and finally production yield can decrease because you cannot manufactured correctly if you are unable to measure correctly. A new high volume manufacturing (HVM) CD metrology solution has to be found in order to improve the relative accuracy of production environment otherwise current CD Metrology solution will very soon get out of steam.In this paper, we will present a potential Hybrid CD metrology solution that smartly tuned 3D-AFM (3D-Atomic Force Microscope) and CD-SEM data in order to add accuracy both in R and D and production. The final goal for 'chip makers' is to improve yield and save R and D and production costs through real-time feedback loop implement on CD metrology routines. Such solution can be implemented and extended to any kind of CD metrology solution. In a 2{sup nd} part we will discuss and present results regarding a new AFM3D probes breakthrough with the introduction of full carbon tips made will E-Beam Deposition process. The goal is to overcome the current limitations of conventional flared silicon tips which are definitely not suitable for sub-32 nm nodes production.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Flexible Thin-Film Silicon Solar Cells

High fuel costs, environmental concerns and issues of national energy security have brought increasing attention to a distributed generation program for electricity based on solar technology. Rooftop photovoltaic (PV) systems provide distributed generation since the power is consumed at the point of production, thus eliminating the need for costly additional transmission lines. However, most current photovoltaic modules are heavy and require a significant amount of labor and accessory hardware such as mounting frames for installation on rooftops. This makes rooftop systems impractical or cost prohibitive in many instances. Under this project, Xunlight has advanced its manufacturing process for the production of lightweight, flexible thin-film silicon based photovoltaic modules, and has enhanced the reliability and performance of Xunlight’s products. These modules are easily unrolled and adhered directly to standard commercial roofs without mounting structures or integrated directly into roofing membrane materials for the lowest possible installation costs on the market. Importantly, Xunlight has now established strategic alliances with roofing material manufacturers and other OEMs for the development of building integrated photovoltaic roofing and other PV-enabled products, and has deployed its products in a number of commercial installations with these business partners.

14 SOLAR ENERGY↗
DOE OSTI2021

Organic Solvent Free Process to Fabricate High Performance Silicon/Graphite Composite Anode

Cycling stability is a key challenge for application of silicon (Si)-based composite anodes as the severe volume fluctuation of Si readily leads to fast capacity fading. The binder is a crucial component of the composite electrodes. Although only occupying a small amount of the total composite mass, the binder has major impact on the long-term electrochemical performance of Si-based anodes. In recent years, water-based binders including styrene-butadiene rubber (SBR) and carboxymethyl cellulose (CMC) have attracted wide research interest as eco-friendly and low-cost alternatives for the conventional poly(vinylidene difluoride) (PVDF) binder in Si anodes. In this study, Si-based composite anodes are fabricated by simple solid mixing of the active materials with subsequent addition of SBR and CMC binders. This approach bypasses the use of toxic and expansive organic solvents. The factors of binder, silicon, and graphite materials have been systematically investigated. It is found that the retained capacities of the anodes are more than 440 mAh/g after 400 cycles. These results indicate that organic solvent free process is a facile strategy for producing high performance silicon/graphite composite anodes.

Fang, Chen (ORCID:0000000321011991)↗
DOE OSTI2016

Effect of layer thickness on device response of silicon heavily supersaturated with sulfur

We report on a simple experiment in which the thickness of a hyperdoped silicon layer, supersaturated with sulfur by ion implantation followed by pulsed laser melting and rapid solidification, is systematically varied at constant average sulfur concentration, by varying the implantation energy, dose, and laser fluence. Contacts are deposited and the external quantum efficiency (EQE) is measured for visible wavelengths. We posit that the sulfur layer primarily absorbs light but contributes negligible photocurrent, and we seek to support this by analyzing the EQE data for the different layer thicknesses in two interlocking ways. In the first, we use the measured concentration depth profiles to obtain the approximate layer thicknesses, and, for each wavelength, fit the EQE vs. layer thickness curve to obtain the absorption coefficient of hyperdoped silicon for that wavelength. Comparison to literature values for the hyperdoped silicon absorption coefficients [S.H. Pan et al. Applied Physics Letters 98, 121913 (2011)] shows good agreement. Next, we essentially run this process in reverse; we fit with Beer’s law the curves of EQE vs. hyperdoped silicon absorption coefficient for those wavelengths that are primarily absorbed in the hyperdoped silicon layer, and find that the layer thicknesses obtained from the fit are in good agreement with the original values obtained from the depth profiles. We conclude that the data support our interpretation of the hyperdoped silicon layer as providing negligible photocurrent at high S concentrations. This work validates the absorption data of Pan et al. [Applied Physics Letters 98, 121913 (2011)], and is consistent with reports of short mobility-lifetime products in hyperdoped layers. It suggests that for optoelectronic devices containing hyperdoped layers, the most important contribution to the above band gap photoresponse may be due to photons absorbed below the hyperdoped layer.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Processing Parameter Control of Lifetime-Limiting Failure Mechanisms in Al-Si Cast Alloys at Room and Elevated Temperatures

Aluminum-silicon cast alloys widely used throughout the transportation sector, A356, 319, and A390, have been studied with respect to chemical compositions and processing parameters that control the resultant mechanical behavior. First, the development of strengthening mechanisms is discussed in terms of the role that alloying elements, solidification behavior, and thermal treatments play. Based on this understanding, an extensive matrix of material conditions was developed and characterized in order to provide practical guidelines for alloy development. In order to provide an understanding of lifetime-limiting failure mechanisms, fatigue crack growth and hot compressive dwell behaviors were further investigated. Fatigue crack growth tests were conducted for all alloys at R = 0.1 and room temperature, and creep–fatigue of 319 was studied at R = − 1.5 and 250 °C. The role of processing parameters in controlling the mechanical properties is identified and discussed, and recommendations for optimized design are made.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Wide-Gap Perovskite via Synergetic Surface Passivation and Its Application toward Efficient Stacked Tandem Photovoltaics

Superior bandgap tunability enables solution-processed halide perovskite a promising candidate for multi-junction photovoltaics (PVs). Particularly, optically coupling wide-gap perovskite by stacking with commercially available PVs such as silicon and CIGS (also known as 4-terminal tandem) simplifies the technology transfer process, and further advances the commercialization potential of perovskite technology. However, compared with matured PV materials and the phase-pure FAPbI 3 , wide-gap perovskite still suffers from huge voltage deficits. Here, the authors take advantage of the synergetic effect behind a sequential fluoride and organic ammonium salt surface passivation strategy to control non-radiative energy losses, and obtained a 17.7% efficiency in infrared-transparent wide-gap perovskite solar cells (21.1% for opaque device), and achieved efficiencies of over 25% when stacked with commercial Si and CIGS products with original PCEs of 18–20% under a 4-terminal working condition.

36 MATERIALS SCIENCE↗
DOE OSTI2015

High performance InAs quantum dot lasers on silicon substrates by low temperature Pd-GaAs wafer bonding

InAs quantum dot (QD) laser heterostructures have been grown by molecular beam epitaxy system on GaAs substrates, and then transferred to silicon substrates by a low temperature (250 °C) Pd-mediated wafer bonding process. A low interfacial resistivity of only 0.2 Ω cm{sup 2} formed during the bonding process is characterized by the current-voltage measurements. The InAs QD lasers on Si exhibit comparable characteristics to state-of-the-art QD lasers on silicon substrates, where the threshold current density J{sub th} and differential quantum efficiency η{sub d} of 240 A/cm{sup 2} and 23.9%, respectively, at room temperature are obtained with laser bars of cavity length and waveguide ridge of 1.5 mm and 5 μm, respectively. The InAs QD lasers also show operation up to 100 °C with a threshold current density J{sub th} and differential quantum efficiency η{sub d} of 950 A/cm{sup 2} and 9.3%, respectively. The temperature coefficient T{sub 0} of 69 K from 60 to 100 °C is characterized from the temperature dependent J{sub th} measurements.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗