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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 793 records · Page 44
All sourcesNASA NTRSDOE OSTI
NASA NTRS1983

Development and fabrication of a high current, fast recovery power diode

A high voltage (VR = 1200 V), high current (IF = 150 A), fast recovery ( 700 ns) and low forward voltage drop ( 1.5 V) silicon rectifier was designed and the process developed for its fabrication. For maximum purity, uniformity and material characteristic stability, neutron transmutation n-type doped float zone silicon is used. The design features a hexagonal chip for maximum area utilization of space available in the DO-8 diode package, PIN diffused junction structure with deep diffused D(+) anode and a shallow high concentration n(+) cathode. With the high temperature glass passivated positive bevel mesa junction termination, the achieved blocking voltage is close to the theoretical limit of the starting material. Gold diffusion is used to control the lifetime and the resulting effect on switching speed and forward voltage tradeoff. For solder reflow assembly, trimetal (Al-Ti-Ni) contacts are used. The required major device electrical characteristics were achieved. Due to the tradeoff nature of forward voltage drop and reverse recovery time, a compromise was reached for these values.

Berman, A. H.↗
NASA NTRS2017

Design and Fabrication of Electrostatically Actuated Silicon Microshutters Arrays

We have developed a new fabrication process to actuate microshutter arrays (MSA) electrostatically at NASA Goddard Space Flight Center. The microshutters are fabricated on silicon with thin silicon nitride membranes. A pixel size of each microshutter is 100 x 200 micrometers 2. The microshutters rotate 90 degrees on torsion bars. The selected microshutters are actuated, held, and addressed electrostatically by applying voltages on the electrodes the front and back sides of the microshutters. The atomic layer deposition (ALD) of aluminum oxide was used to insulate electrodes on the back side of walls; the insulation can withstand over 100 V. The ALD aluminum oxide is dry etched, and then the microshutters are released in vapor HF.

microshutter arrays↗
NASA NTRS2016

Additive Manufacturing of Silicon Carbide-Based Ceramic Matrix Composites: Technical Challenges and Opportunities

Advanced SiC-based ceramic matrix composites offer significant contributions toward reducing fuel burn and emissions by enabling high overall pressure ratio (OPR) of gas turbine engines and reducing or eliminating cooling air in the hot-section components, such as shrouds, combustor liners, vanes, and blades. Additive manufacturing (AM), which allows high value, custom designed parts layer by layer, has been demonstrated for metals and polymer matrix composites. However, there has been limited activity on additive manufacturing of ceramic matrix composites (CMCs). In this presentation, laminated object manufacturing (LOM), binder jet process, and 3-D printing approaches for developing ceramic composite materials are presented. For the laminated object manufacturing (LOM), fiber prepreg laminates were cut into shape with a laser and stacked to form the desired part followed by high temperature heat treatments. For the binder jet, processing optimization was pursued through silicon carbide powder blending, infiltration with and without SiC nano powder loading, and integration of fibers into the powder bed. Scanning electron microscopy was conducted along with XRD, TGA, and mechanical testing. Various technical challenges and opportunities for additive manufacturing of ceramics and CMCs will be presented.

ceramic matrix composites↗
NASA NTRS1974

Improved toughness of refractory compounds

The concept of grain-boundary-engineering through elimination of the grain-boundary silicate phase in silicon nitride was developed. The process involved removal of the silica from the nitride powder via a thermal treatment coupled with the use of nitride additives to compensate the remaining oxygen. Magnesium and aluminum nitrides are found to be the most effective additive for use as oxygen compensators. Strength decreases at elevated temperatures are not observed in the alumina containing material. The creep rate of a dual additive sialon composition was two orders of magnitude lower at 1400 C than commercial silicon nitride. A cursory analysis of the creep mechanism indicate that grain-boundary sliding is avoided through elimination of the grain-boundary silicate phase.

Wright, T. R.↗
DOE OSTI2024

Unraveling sources of emission heterogeneity in Silicon Vacancy color centers with cryo-cathodoluminescence microscopy

Diamond color centers have proven to be versatile quantum emitters and exquisite sensors of stress, temperature, electric and magnetic fields, and biochemical processes. Among color centers, the silicon-vacancy (SiV - ) defect exhibits high brightness, minimal phonon coupling, narrow optical linewidths, and high degrees of photon indistinguishability. Yet the creation of reliable and scalable SiV - -based color centers has been hampered by heterogeneous emission, theorized to originate from surface imperfections, crystal lattice strain, defect symmetry, or other lattice impurities. Here, we advance high-resolution cryo-electron microscopy combined with cathodolumines cence spectroscopy and 4D scanning transmission electron microscopy (STEM) to elucidate the structural sources of heterogeneity in SiV - emission from nanodiamond with sub-nanometer-scale resolution. Our diamond nanoparticles are grown directly on TEM membranes from molecular-level seedings, representing the natural formation conditions of color centers in diamond. We show that individual subcrystallites within a single nanodiamond exhibit distinct zero-phonon line (ZPL) energies and differences in brightness that can vary by 0.1 meV in energy and over 70% in brightness. These changes are correlated with the atomic-scale lattice structure. We find that ZPL blue shifts result from tensile strain, while ZPL red shifts are due to compressive strain. We also find that distinct crystallites host distinct densities of SiV - emitters and that grain boundaries impact SiV - emission significantly. Finally, we interrogate nanodiamonds as small as 40 nm in diameter and show that these diamonds exhibit no spatial change to their ZPL energy. Our work provides a foundation for atomic-scale structure-emission correlation, e.g., of single atomic defects in a range of quantum and two-dimensional materials.

36 MATERIALS SCIENCE↗
NASA NTRS1979

Slicing of Silicon into Sheet Material. Silicon Sheet Growth Development for the Large Area Silicon Sheet Task of the Low Cost Solar Array Project

The use of multiblade slurry sawing to produce silicon wafers from ingots was investigated. The commercially available state of the art process was improved by 20% in terms of area of silicon wafers produced from an ingot. The process was improved 34% on an experimental basis. Economic analyses presented show that further improvements are necessary to approach the desired wafer costs, mostly reduction in expendable materials costs. Tests which indicate that such reduction is possible are included, although demonstration of such reduction was not completed. A new, large capacity saw was designed and tested. Performance comparable with current equipment (in terms of number of wafers/cm) was demonstrated.

Fleming, J. R.↗
NASA NTRS2003

Challenges and Opportunities in Reactive Processing and Applications of Advanced Ceramic Materials

Recently, there has been a great deal of interest in the research, development, and commercialization of innovative synthesis and processing technologies for advanced ceramics and composite materials. Reactive processing approaches have been actively considered due to their robustness, flexibility, and affordability. A wide variety of silicon carbide-based advanced ceramics and composites are currently being fabricated using the processing approaches involving reactive infiltration of liquid and gaseous species into engineered fibrous or microporous carbon performs. The microporous carbon performs have been fabricated using the temperature induced phase separation and pyrolysis of two phase organic (resin-pore former) mixtures and fiber reinforcement of carbon and ceramic particulate bodies. In addition, pyrolyzed native plant cellulose tissues also provide unique carbon templates for manufacturing of non-oxide and oxide ceramics. In spite of great interest in this technology due to their affordability and robustness, there is a lack of scientific basis for process understanding and many technical challenges still remain. The influence of perform properties and other parameters on the resulting microstructure and properties of final material is not well understood. In this presentation, mechanism of silicon-carbon reaction in various systems and the effect of perform microstructure on the mechanical properties of advanced silicon carbide based materials will be discussed. Various examples of applications of reactively processed advanced silicon carbide ceramics and composite materials will be presented.

Singh, Mrityunjay↗
NASA NTRS1984

An Improved Analysis of the Thermal Buckling of Silicon Sheet

Buckling problems on the production of wide and thin silicon sheet are discussed. Buckling occurs in all of the processes which are investigated for their potential in mass producing wide silicon sheet for use in making solar cells. It is a fact that the processes which produce good ribbon 2 cm in width do not yield the same quality product at 10 cm in width. Buckling develops precisely because the sheets are wide and very very thin. The buckling of very thin cantilever plates due to temperature variations in the axial direction is considered. The temperature variation in the width direction was determined. Axial temperature variations which cause very thin plates to buckle in a torsional mode are demonstrated. It is assumed that the particular variation of the stress function in the width direction and thereafter the analysis is exact.

Dillon, O. W., Jr.↗
NASA NTRS1994

Growth of delta-doped layers on silicon CCD/S for enhanced ultraviolet response

The backside surface potential well of a backside-illuminated CCD is confined to within about half a nanometer of the surface by using molecular beam epitaxy (MBE) to grow a delta-doped silicon layer on the back surface. Delta-doping in an MBE process is achieved by temporarily interrupting the evaporated silicon source during MBE growth without interrupting the evaporated p+ dopant source (e.g., boron). This produces an extremely sharp dopant profile in which the dopant is confined to only a few atomic layers, creating an electric field high enough to confine the backside surface potential well to within half a nanometer of the surface. Because the probability of UV-generated electrons being trapped by such a narrow potential well is low, the internal quantum efficiency of the CCD is nearly 100% throughout the UV wavelength range. Furthermore, the quantum efficiency is quite stable.

Hoenk, Michael E.↗
NASA NTRS1982

Flat-plate collector research area: Silicon material task

Silane decomposition in a fluidized-bed reactor (FBR) process development unit (PDU) to make semiconductor-grade Si is reviewed. The PDU was modified by installation of a new heating system to provide the required temperature profile and better control, and testing was resumed. A process for making trichlorosilane by the hydrochlorination of metallurgical-grade Si and silicon tetrachloride is reported. Fabrication and installation of the test system employing a new 2-in.-dia reactor was completed. A process that converts trichlorosilane to dichlorosilane (DCS), which is reduced by hydrogen to make Si by a chemical vapor deposition step in a Siemens-type reactor is described. Testing of the DCS PDU integraled with Si deposition reactors continued. Experiments in a 2-in.-dia reactor to define the operating window and to investigate the Si deposition kinetics were completed.

Lutwack, R.↗
NASA NTRS2007

Synthesis of Poly-Silicon Thin Films on Glass Substrate Using Laser Initiated Metal Induced Crystallization of Amorphous Silicon for Space Power Application

Poly-silicon thin films on glass substrates are synthesized using laser initiated metal induced crystallization of hydrogenated amorphous silicon films. These films can be used to fabricate solar cells on low cost glass and flexible substrates. The process starts by depositing 200 nm amorphous silicon films on the glass substrates. Following this, 200 nm of sputtered aluminum films were deposited on top of the silicon layers. The samples are irradiated with an argon ion cw laser beam for annealing. Laser power densities ranging from 4 to 9 W/cm2 were used in the annealing process. Each area on the sample is irradiated for a different exposure time. Optical microscopy was used to examine any cracks in the films and loss of adhesion to the substrates. X-Ray diffraction patterns from the initial results indicated the crystallization in the films. Scanning electron microscopy shows dendritic growth. The composition analysis of the crystallized films was conducted using Energy Dispersive x-ray Spectroscopy. The results of poly-silicon films synthesis on space qualified flexible substrates such as Kapton are also presented.

Abu-Safe, Husam H.↗
DOE OSTI2020

Genesis and Propagation of Fractal Structures During Photoelectrochemical Etching of n-Silicon

The genesis, propagation, and dimensions of fractal-etch patterns that form anodically on front- or back-illuminated n-Si(100) photoelectrodes in contact with 11.9 M NH 4 F (aqueous) have been investigated during either a linear potential sweep or a constant potential hold ( E = +6.0 V versus Ag/AgCl). Optical images collected in situ during electrochemical experiments reflected the location and underlying mechanism of initiation and propagation of the structures on the surface. X-ray photoelectron spectroscopic (XPS) data collected for samples emersed from the electrolyte at varied times provided detailed information about the chemistry of the surface during fractal etching. The fractal structure was strongly influenced by the orientation of the crystalline Si sample. Furthermore, the etch patterns were initially generated at points along the circumference of bubbles that formed upon immersion of n-Si(100) samples in the electrolyte, most likely due to the electrochemical and electronic isolation of areas beneath bubbles. XPS data showed the presence of a tensile-stressed silicon surface throughout the etching process as well as the presence of SiO x F y on the surface. The two-dimensional fractal dimension, D f,2D , of the patterns increased with etching time to a maximum observed value of D f,2D = 1.82. Promotion of fractal etching near etch masks that electrochemically and electronically isolated areas of the photoelectrode surface enabled the selective placement of highly branched structures at desired locations on an electrode surface.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Laser Crystallization and Dopant Activation of a-Si:H Carrier-Selective Layer in TOPCon Si Solar Cells

Herein, we present a pulsed-laser processing method for crystallization and dopant activation of a highly n-doped amorphous silicon (a-Si:H) carrier-selective layer in a tunnel oxide passivated contact (TOPCon) Si solar cell structure. Here, the laser method provides enhanced conductivity and implied open circuit voltage while reducing emitter saturation current density and surface heating, as opposed to conventional high-temperature furnace annealing of the bulk Si wafer with a TOPCon structure. We identify an appropriate laser wavelength, fluence, and layer thickness using modeling and simulations. Raman and Hall effect measurements demonstrate increased crystallinity and dopant activation, whereas photoconductive decay shows enhanced surface and interface passivation quality. Additionally, we examine the role of subsequent SiNx deposition on further improving the passivation of laser-processed TOPCon layers to achieve a 5.9 kΩ/sq film sheet resistance, 2 ms effective carrier lifetime, 718 mV implied open-circuit voltage (iVOC), and 8.6 fA/cm 2 one-side recombination current density (J0) with the potential for further passivation improvement via laser process and a-Si layer thickness optimization.

14 SOLAR ENERGY↗
NASA NTRS1980

Anisotropic Tribological Properties of Silicon Carbide

The anisotropic friction, deformation and fracture behavior of single crystal silicon carbide surfaces were investigated in two categories. The categories were called adhesive and abrasive wear processes, respectively. In the adhesive wear process, the adhesion, friction and wear of silicon carbide were markedly dependent on crystallographic orientation. The force to reestablish the shearing fracture of adhesive bond at the interface between silicon carbide and metal was the lowest in the preferred orientation of silicon carbide slip system. The fracturing of silicon carbide occurred near the adhesive bond to metal and it was due to primary cleavages of both prismatic (10(-1)0) and basal (0001) planes.

Miyoshi, K.↗
NASA NTRS1984

Simultaneous junction formation

High-risk, high-payoff improvements to a baseline process sequence of simultaneous junction formation of silicon solar cells are discussed. The feasibility of simultaneously forming front and back junctions of solar cells using liquid dopants on dendritic web silicon was studied. Simultaneous diffusion was compared to sequential diffusion. A belt furnace for the diffusion process was tested.

Campbell, R. B.↗