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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 793 records · Page 44
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Spin-exchange carrier multiplication in manganese-doped colloidal quantum dots

Abstract Carrier multiplication is a process whereby a kinetic energy of a carrier relaxes via generation of additional electron–hole pairs (excitons). This effect has been extensively studied in the context of advanced photoconversion as it could boost the yield of generated excitons. Carrier multiplication is driven by carrier–carrier interactions that lead to excitation of a valence-band electron to the conduction band. Normally, the rate of phonon-assisted relaxation exceeds that of Coulombic collisions, which limits the carrier multiplication yield. Here we show that this limitation can be overcome by exploiting not ‘direct’ but ‘spin-exchange’ Coulomb interactions in manganese-doped core/shell PbSe/CdSe quantum dots. In these structures, carrier multiplication occurs via two spin-exchange steps. First, an exciton generated in the CdSe shell is rapidly transferred to a Mn dopant. Then, the excited Mn ion undergoes spin-flip relaxation via a spin-conserving pathway, which creates two excitons in the PbSe core. Due to the extremely fast, subpicosecond timescales of spin-exchange interactions, the Mn-doped quantum dots exhibit an up-to-threefold enhancement of the multiexciton yield versus the undoped samples, which points towards the considerable potential of spin-exchange carrier multiplication in advanced photoconversion.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Artificial dynamical effects in quantum field theory

In Newtonian mechanics, studying a system in a non-Galilean reference frame can lead to inertial pseudoforces appearing, such as the centrifugal force that seems to arise in dynamics analysed in a rotating frame. Likewise, artificial effects may arise in relativistic quantum field theory (QFT) if a system is studied in a framework that violates Poincaré invariance. Here, we highlight how such issues complicate the traditional canonical quantization of QFTs and can lead to a subjective description of natural phenomena. By contrast, the treatment of the same problem using light-front quantization is free from spurious pseudoeffects because Poincaré invariance is effectively preserved for all practical intents and purposes. We illustrate these statements using several examples: the Gerasimov-Drell-Hearn (GDH) relation, a fundamental feature of QFT; the absence of any measurable impact of Lorentz contraction in high-energy collisions; and the fictitious character of vacuum fluctuation contributions to the cosmological constant.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Electronic structure of cobalt doped CdSe quantum dots using soft X-ray spectroscopy

Here, the electronic structure and magnetic properties of cobalt doped CdSe quantum dots (QDs) are studied using electron microscopy, soft X-ray spectroscopy, and magnetometry. Magnetometry measurements suggest these QDs are superparamagnetic, contrary to a spin-glass state observed in the bulk analogue. Electron microscopy shows well formed QDs, but with cobalt existing as doped into the QD and as unreacted species not contained in the QD. X-ray absorption measurements at the Co L3-edge suggest that changes in spectra features as a function of particle size can be described considering combination of a cobalt ion in a tetrahedral crystal field and an octahedrally coordinated (impurity) phase. With decreasing particle sizes, the impurity phase increases, suggesting that small QDs can be difficult to dope.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Internal Field Shielding and the Quantum Confined Stark Effect in a Single In{sub x}Ga{sub 1-x}N Quantum Disk

Time-integrated and time-resolved microphotoluminescence studies were carried out on In{sub x}Ga{sub 1-x}N quantum disks embedded in GaN nanocolumns grown by molecular beam epitaxy. Emission at {approx}3.33 eV from confined states was detected and observed to blueshift with excitation power; a result of charge screening and the quantum confined Stark effect. The lifetime of the emission was measured to decrease with increasing excitation power, attributed to reduced band bending and resulting increased overlap of the confined electron and hole wave functions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Quantum size effects and transport phenomena in PbSe quantum wells and PbSe/EuS superlattices

It is established that the room-temperature dependences of transport properties on the total thickness of PbSe layers d in PbSe/EuS superlattices exhibit an oscillatory behavior. It is shown that the oscillation period Δd practically coincides with the period of the thickness oscillations observed earlier in single PbSe/EuS quantum well. The non-monotonic character of these dependences is attributed to quantum size effects. The theoretically estimated and experimentally determined Δd values are in good agreement.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Bias voltage dependence of the electron spin depolarization in quantum wires in the quantum Hall regime detected by the resistively detected NMR

We performed the resistively-detected nuclear magnetic resonance (RDNMR) to study the electron spin polarization in the non-equilibrium quantum Hall regime. By measuring the Knight shift, we derive source-drain bias voltage dependence of the electron spin polarization in quantum wires. The electron spin polarization shows minimum value around the threshold voltage of the dynamic nuclear polarization.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Synthesis of CdSe quantum dots for quantum dot sensitized solar cell

CdSe Quantum Dots (QDs) of size 0.85 nm were synthesized using chemical route. ZnO based Quantum Dot Sensitized Solar Cell (QDSSC) was fabricated using CdSe QDs as sensitizer. The Pre-synthesized QDs were found to be successfully adsorbed on front ZnO electrode and had potential to replace organic dyes in Dye Sensitized Solar Cells (DSSCs). The efficiency of QDSSC was obtained to be 2.06 % at AM 1.5.

14 SOLAR ENERGY↗
DOE OSTI2014

Green synthesis of highly efficient CdSe quantum dots for quantum-dots-sensitized solar cells

Green synthesis of CdSe quantum dots for application in the quantum-dots-sensitized solar cells (QDSCs) is investigated in this work. The CdSe QDs were prepared with glycerol as the solvent, with sharp emission peak, full width at half maximum around 30 nm, and absorption peak from 475 nm to 510 nm. The reaction is environmental friendly and energy saving. What's more, the green synthesized CdSe QDs are coherence to the maximum remittance region of the solar spectrum and suitable as sensitizers to assemble onto TiO{sub 2} electrodes for cell devices application. What's more, the dynamic procedure of the carriers' excitation, transportation, and recombination in the QDSCs are discussed. Because the recombination of the electrons from the conduction band of TiO{sub 2}'s to the electrolyte affects the efficiency of the solar cells greatly, 3-Mercaptopropionic acid capped water-dispersible QDs were used to cover the surface of TiO{sub 2}. The resulting green synthesized CdSe QDSCs with Cu{sub 2}S as the electrode show a photovoltaic performance with a conversion efficiency of 3.39%.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Electrically tunable spin filtering for electron tunneling between spin-resolved quantum Hall edge states and a quantum dot

Spin filtering with electrically tunable efficiency is achieved for electron tunneling between a quantum dot and spin-resolved quantum Hall edge states by locally gating the two-dimensional electron gas (2DEG) leads near the tunnel junction to the dot. The local gating can change the potential gradient in the 2DEG and consequently the edge state separation. We use this technique to electrically control the ratio of the dot–edge state tunnel coupling between opposite spins and finally increase spin filtering efficiency up to 91%, the highest ever reported, by optimizing the local gating.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Enhanced performance of quantum dot solar cells based on type II quantum dots

The characteristics of quantum dot solar cells (QDSCs) based on type II QDs are investigated theoretically. Based on a drift-diffusion model, we obtained a much higher open circuit voltage (V{sub oc}) as well as conversion efficiency in a type II QDSC, compared to type I QDSCs. The improved V{sub oc} and efficiency are mainly attributed to the much longer Auger recombination lifetime in type II QDs. Moreover, the influence of the carrier lifetime on devices' performance is discussed and clarified. In addition, an explicit criterion to determine the role of quantum dots in solar cells is put forward.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Homogeneous and inhomogeneous sources of optical transition broadening in room temperature CdSe/ZnS nanocrystal quantum dots

We perform photoluminescence excitation measurements on individual CdSe/ZnS nanocrystal quantum dots (NCQDs) at room temperature to study optical transition energies and broadening. The observed features in the spectra are identified and compared to calculated transition energies using an effective mass model. The observed broadening is attributed to phonon broadening, spectral diffusion, and size and shape inhomogeneity. The former two contribute to the broadening transitions in individual QDs, while the latter contributes to the QD-to-QD variation. We find that phonon broadening is often not the dominant contribution to transition line widths, even at room temperature, and that broadening does not necessarily increase with transition energy. This may be explained by differing magnitude of spectral diffusion for different quantum-confined states.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Coupling capacitance between double quantum dots tunable by the number of electrons in Si quantum dots

Tunability of capacitive coupling in the Si double-quantum-dot system is discussed by changing the number of electrons in quantum dots (QDs), in which the QDs are fabricated using pattern-dependent oxidation (PADOX) of a Si nanowire and multi-fine-gate structure. A single QD formed by PADOX is divided into multiple QDs by additional oxidation through the gap between the fine gates. When the number of electrons occupying the QDs is large, the coupling capacitance increases gradually and almost monotonically with the number of electrons. This phenomenon is attributed to the gradual growth in the effective QD size due to the increase in the number of electrons in the QDs. On the other hand, when the number of electrons changes in the few-electron regime, the coupling capacitance irregularly changes. This irregularity can be observed even up to 40 electrons. This behavior is attributable the rough structure of Si nano-dots made by PADOX. This roughness is thought to induce complicated change in the electron wave function when an electron is added to or subtracted from a QD.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Coherent quantum transport in disordered systems: A unified polaron treatment of hopping and band-like transport

Quantum transport in disordered systems is studied using a polaron-based master equation. The polaron approach is capable of bridging the results from the coherent band-like transport regime governed by the Redfield equation to incoherent hopping transport in the classical regime. A non-monotonic dependence of the diffusion coefficient is observed both as a function of temperature and system-phonon coupling strength. In the band-like transport regime, the diffusion coefficient is shown to be linearly proportional to the system-phonon coupling strength and vanishes at zero coupling due to Anderson localization. In the opposite classical hopping regime, we correctly recover the dynamics described by the Fermi’s Golden Rule and establish that the scaling of the diffusion coefficient depends on the phonon bath relaxation time. In both the hopping and band-like transport regimes, it is demonstrated that at low temperature, the zero-point fluctuations of the bath lead to non-zero transport rates and hence a finite diffusion constant. Application to rubrene and other organic semiconductor materials shows a good agreement with experimental mobility data.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Structural stability and defect energetics of ZnO from diffusion quantum Monte Carlo

We have applied the many-body ab initio diffusion quantum Monte Carlo (DMC) method to study Zn and ZnO crystals under pressure and the energetics of the oxygen vacancy, zinc interstitial, and hydrogen impurities in ZnO. We show that DMC is an accurate and practical method that can be used to characterize multiple properties of materials that are challenging for density functional theory (DFT) approximations. DMC agrees with experimental measurements to within 0.3 eV, including the band-gap of ZnO, the ionization potential of O and Zn, and the atomization energy of O{sub 2}, ZnO dimer, and wurtzite ZnO. DMC predicts the oxygen vacancy as a deep donor with a formation energy of 5.0(2) eV under O-rich conditions and thermodynamic transition levels located between 1.8 and 2.5 eV from the valence band maximum. Our DMC results indicate that the concentration of zinc interstitial and hydrogen impurities in ZnO should be low under n-type and Zn- and H-rich conditions because these defects have formation energies above 1.4 eV under these conditions. Comparison of DMC and hybrid functionals shows that these DFT approximations can be parameterized to yield a general correct qualitative description of ZnO. However, the formation energy of defects in ZnO evaluated with DMC and hybrid functionals can differ by more than 0.5 eV.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Profiling the local carrier concentration across a semiconductor quantum dot

We profile the local carrier concentration, n, across epitaxial InAs/GaAs quantum dots (QDs) consisting of 3D islands on top of a 2D alloy layer. We use scanning thermoelectric microscopy to measure a profile of the temperature gradient-induced voltage, which is converted to a profile of the local Seebeck coefficient, S. The S profile is then converted to a conduction band-edge profile and compared with Poisson-Schrodinger band-edge simulations. Our combined computational-experimental approach suggests a reduced carrier concentration in the QD center in comparison to that of the 2D alloy layer. The relative roles of free carrier trapping and/or dopant expulsion are discussed.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Measurement of the tradeoff between intrinsic emittance and quantum efficiency from a NaKSb photocathode near threshold

We measure the tradeoff between the quantum efficiency and intrinsic emittance from a NaKSb photocathode at three increasing wavelengths (635, 650, and 690 nm) at or below the energy of the bandgap plus the electron affinity, hν≤E{sub g}+E{sub a}. These measurements were performed using a high voltage dc gun for varied photocathode surface fields of 1.4−4.4 MV/m. Measurements of intrinsic emittance are performed using two different methods and were found to agree. At the longest wavelength available, 690 nm, the intrinsic emittance was 0.26 μm/mm-rms with a quantum efficiency of ∼10{sup −4}. The suitability of NaKSb emitting at threshold for various low emittance applications is discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Control of optical bistability and third-order nonlinearity via tunneling induced quantum interference in triangular quantum dot molecules

The optical bistability of a triangular quantum dot molecules embedded inside a unidirectional ring cavity is studied. The type, the threshold and the hysteresis loop of the optical bistability curves can be modified by the tunneling parameters, as well as the probe laser field. The linear and nonlinear susceptibilities of the medium are also studied to interpret the corresponding results. The physical interpretation is that the tunneling can induce the quantum interference, which modifies the linear and the nonlinear response of the medium. As a consequence, the characteristics of the optical bistability are changed. The scheme proposed here can be utilized for optimizing and controlling the optical switching process.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Mode specific dynamics of the H{sub 2} + CH{sub 3} → H + CH{sub 4} reaction studied using quasi-classical trajectory and eight-dimensional quantum dynamics methods

An eight-dimensional quantum dynamical model is proposed and applied to the title reaction. The reaction probabilities and integral cross sections have been determined for both the ground and excited vibrational states of the two reactants. The results indicate that the H{sub 2} stretching and CH{sub 3} umbrella modes, along with the translational energy, strongly promote the reactivity, while the CH{sub 3} symmetric stretching mode has a negligible effect. The observed mode specificity is confirmed by full-dimensional quasi-classical trajectory calculations. The mode specificity can be interpreted by the recently proposed sudden vector projection model, which attributes the enhancement effects of the reactant modes to their strong couplings with the reaction coordinate at the transition state.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗