Effect of nitrogen passivation on interface composition and physical stress in SiO 2 /SiC(4H) structures
Here, the electron density and physical stress at the thermally oxidized SiC/SiO 2 interface, and their change with nitrogen incorporation, were observed using x-ray reflectivity, Raman scattering, and a novel stress determination technique. There is no evidence for residual carbon species at the SiO 2 /SiC. Instead, a ~1 nm thick low electron density layer is formed at this interface, consistent with interfacial suboxides (SiO x , 0.3 < x < 2), along with high interfacial stress. Nitrogen passivation, a known process to improve the interface state density and electronic properties, eliminates the low density component and simultaneously releases the interface stress. On the basis of these findings, a new chemical interaction model is proposed to explain the effect of the nitrogen, and a guideline, stress managing together with elemental control of the dielectric/SiC interface, is suggested to achieve high quality gate stack on SiC.