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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 793 records · Page 44
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Phenyl radical + propene: a prototypical reaction surface for aromatic-catalyzed 1,2-hydrogen-migration and subsequent resonance-stabilized radical formation

The C 9 H 11 potential energy surface (PES) was experimentally and theoretically explored because it is a relatively simple, prototypical alkylaromatic radical system. Although the C 9 H 11 PES has already been extensively studied both experimentally (under single-collision and thermal conditions) and theoretically, new insights were made in this work by taking a new experimental approach: flash photolysis combined with time-resolved molecular beam mass spectrometry (MBMS) and visible laser absorbance. The C 9 H 11 PES was experimentally accessed by photolytic generation of the phenyl radical and subsequent reaction with excess propene (C 6 H 5 + C 3 H 6 ). The overall kinetics of C 6 H 5 + C 3 H 6 was measured using laser absorbance with high time-resolution from 300 to 700 K and was found to be in agreement with earlier measurements over a lower temperature range. Five major product channels of C 6 H 5 + C 3 H 6 were observed with MBMS at 600 and 700 K, four of which were expected: hydrogen (H)-abstraction (measured by the stable benzene, C 6 H 6 , product), methyl radical (CH 3 )-loss (styrene detected), H-loss (phenylpropene isomers detected) and radical adduct stabilization.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Ligand-triplet migration in iridium( iii ) cyclometalates featuring π-conjugated isocyanide ligands

The manipulation of the triplet excited state manifold leads to large differences in the photophysical properties within a given class of metal–organic chromophores. By the appropriate choice of ancillary ligand, large changes can be made both to the order and nature of the lowest excited states and therefore to the resulting photophysical properties. Herein, a series of four bis-2-phenylpyridine (ppy) cyclometalated Ir(III) compounds bearing two arylisocyanide ligands were synthesized and photophysically characterized to understand the effects of using ancillary ligands featuring systematic changes in π-conjugation. By varying the arylisocyanide ligands, the photoluminescence quantum yield ranged from 5% to 49% and the excited state lifetime ranged between 24 μs and 2 ms. These variations in photophysical response are consistent with lowering the triplet ligand-centered ( 3 LC) state of the arylisocyanide ligand as the π system was extended, confirmed by 77 K photoluminescence emission spectra and ultrafast transient absorption experiments. Here, the latter analysis gleaned detailed insight into the importance of the interplay of the 3 LC state of the phenylpyridine and arylisocyanide ligands in these polychromophic Ir(III) molecules.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

Molecular dynamics simulation of the solid-liquid interface migration in terbium

In this work, we developed a Tb embedded atom method potential which properly reproduces the liquid structure obtained from the ab initio molecular dynamics simulation, the hexagonal close packed (hcp)-body-centered cubic (bcc) phase transformation, and melting temperatures. At least three crystal phases [hcp, face-centered cubic (fcc), and bcc] described by this potential can coexist with the liquid phase. Thus, the developed potential provides an excellent test bed for studies of the completive phase nucleation and growth in a single component system. The molecular dynamics simulation showed that all crystal phases can grow from the liquid phase close to their melting temperatures. However, in the cases of the hcp and fcc growth from the liquid phase at very large supercoolings, the bcc phase forms at the solid-liquid interface in the close packed orientations in spite of the fact that both hcp and fcc phases are more stable than the bcc phase at these temperatures. Finally, this bcc phase closes the hcp and fcc phase from the liquid such that the remaining liquid solidifies into the bcc phase. The initial hcp phase then slowly continues growing in expense of the bcc phase.

36 MATERIALS SCIENCE↗
DOE OSTI2018

The symmetrical quasi-classical approach to electronically nonadiabatic dynamics applied to ultrafast exciton migration processes in semiconducting polymers

In the last several years, a symmetrical quasi-classical (SQC) windowing model applied to the classical Meyer-Miller (MM) vibronic Hamiltonian has been shown to be a simple, efficient, general, and quite-accurate method for treating electronically nonadiabatic processes at the totally classical level. Here, the SQC/MM methodology is applied to ultrafast exciton dynamics in a Frenkel/site-exciton model of oligothiophene (OT) as a model of organic semiconductor polymers. In order to keep the electronic representation as compact and efficient as possible, the adiabatic version of the MM Hamiltonian was employed, with dynamical calculations carried out in the recently developed “kinematic momentum” representation, from which site/monomer-specific (diabatic) excitation probabilities were extracted using a new procedure developed in this work. The SQC/MM simulation results are seen to describe coherent exciton transport driven by planarization of a central torsion defect in the OT oligomer as well as to capture exciton self-trapping effects in good agreement with benchmark quantum calculations using the multi-layer multiconfiguration time-dependent Hartree approach. The SQC/MM calculations are also seen to significantly outperform the standard Ehrenfest approach, which shows serious discrepancies. Furthermore, these results are encouraging, not only because they illustrate a significant further application of the SQC/MM approach and its utility, but because they strongly suggest that classical mechanical simulations (with the potential for linear scaling efficiency) can be used to capture, quantitatively, important dynamical features of electronic excitation energy transfer in semiconducting polymers.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

ERO modeling and analysis of tungsten erosion and migration from a toroidally symmetric source in the DIII-D divertor

A toroidally symmetric tungsten ring inserted in the lower outer divertor of DIII-D was exposed to 25 repeated, attached L-mode shots in reverse- B t configuration. Radial profiles of the W gross erosion flux inferred in situ from spectroscopic measurements of the WI line (400.9 nm) during these experiments are well reproduced by ERO-D3D simulations of carbon and tungsten impurity erosion, transport and redeposition in the outer divertor region. Tungsten gross erosion is mainly induced by physical sputtering of tungsten by carbon impurities. The outward radial transport of carbon impurities in the outer divertor is shown to be mainly governed by E × B drifts in the sheath region. In addition, the erosion and redeposition of carbon on tungsten, induced by the implantation of carbon into tungsten modeled with the homogeneous mixed material model, increases the effective flux of carbon impurities onto the tungsten ring (carbon recycling on tungsten). The dynamics of carbon implantation in tungsten is shown to be consistent with the plasma shot duration in DIII-D. Moreover, it is shown that the localized deposition of tungsten measured experimentally in the outboard region away from the tungsten ring is caused by the long-range radial transport of tungsten impurities in the outer divertor region induced by the interplay between poloidal and radial E × B drifts. Such experimental measurements might provide direct quantitative estimations of tungsten net erosion. In conclusion, the modeling and analysis of carbon and tungsten erosion and redeposition presented in this paper demonstrates that various physical mechanisms and their synergistic effects need to be taken into account to accurately describe erosion, transport and redeposition of impurities in tokamak divertors.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Material migration in W and Mo during bubble growth and fuzz formation

Growth of helium (He) induced bubbles and fuzz in tungsten (W) and molybdenum (Mo) is investigated using samples of W films on Mo substrates and Mo films on W substrates exposed to He-containing plasma in the temperature range of 340 to 1075 K, fluence range of 1.0–14 × 10 25 He·m -2 , and incident ion energy of <50 eV. No fuzz (only up to 2 nm diameter bubbles) and no material transport occur in W films at ≤750 K, while precursors-of or fully-developed fuzz and material mixing occur in W and Mo films at ≥800 K. This suggests that fuzz forms in multi-material systems as long as one material meets the conditions for fuzz formation, namely T s / T m ~ 0.27–0.5 where T s and T m are the sample exposure and material melting temperatures, respectively. Larger He bubbles, more material mixing, and further-developed fuzz occur at higher temperature due to increased mobility of He atoms and small He clusters. Accumulation of substrate material at the surface of fuzzy W and Mo thin-film (<80 nm) samples suggests fuzz growth by material transport from the bubble layer in the bulk up to the fiber tip, likely by a two-step process: (i) diffusion of punched dislocation loops in the bulk toward the fuzz base and (ii) diffusion of adatoms along the fuzz base and fiber surface (with effective transport of adatoms upwards due to trapping of adatoms at curved surfaces of fiber tips and/or due to the continuous generation of adatoms at the fuzz base). While the bubble size and fuzz thickness increase with reduced W concentration in Mo thin-film samples at 838 K likely due to an increase in trap mutation and dislocation loop punching in Mo compared to W, the fuzz thickness decreases with reduced W concentration at 1075 K despite an increase in the bubble size likely due to slower diffusion of interstitial loops in Mo.

Physics↗