Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “low voltage”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 793 records · Page 44
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

A New Search for Low-mass Dark Matter and an Examination and Reduction of the Uncertainty due to the Photoelectric Absorption Cross Section using a Cryogenic Silicon Detector with Single-charge Sensitivity

Many astrophysical observations point to the abundant existence of dark matter (DM) in the universe composed of particles beyond the Standard Model. However despite numerous experiments using different techniques, DM particles have yet to be directly observed. The Super Cryogenic Dark Matter Search (SuperCDMS) SNOLAB experiment will employ silicon and germanium crystal detectors operated at temperatures as low as 15~mK to probe DM interactions using phonon and ionization signals. Recently, R\&D; facilities have developed gram-sized high-voltage eV-scale (HVeV) silicon detectors that achieve single-electron-hole-pair resolution. By probing effective DM-electron interactions, these devices can be used for searches of low-mass DM candidates.This dissertation presents a DM search experiment known as HVeV Run~2 that employs a second-generation HVeV detector operated in an above-ground laboratory at Northwestern University (IL, USA). Energy spectra are obtained from a blind analysis with 0.39 and 1.2\,g-days of exposure with the detector biased at 60 and 100\,V, respectively. The 0.93~gram detector achieves a 3\,eV phonon energy resolution, corresponding to a world-leading charge resolution of 3\,\% of a single electron-hole pair for a detector bias of 100\,V. With charge carrier trapping and impact ionization effects incorporated into the DM signal models, the resulting exclusion limits are reported for inelastic DM-electron scattering for DM masses from 0.5--$10^{4}$\,MeV$/c^{2}$; in the mass range from 1.2--50\,eV$/c^{2}$ the limits for dark photon and axion-like particle absorption are reported.Several DM search experiments, including HVeV Run~2, are sensitive to low-mass DM candidates that rely on the temperature-dependent photoelectric absorption cross section of silicon. However discrepancies in the underlying literature data result in dominating systematic uncertainties on the DM exclusion limits. In order to reduce these systematic uncertainties, this dissertation presents a novel method of making a direct, low-temperature measurement of the photoelectric absorption cross section of silicon at energies near the band gap (1.2--2.8\,eV).

Wilson, Matthew James↗
DOE OSTI2024

Low temperature sodium battery comprising an electrochemically active molten inorganic catholyte

A high-performance electrochemically active sodium molten salt catholyte enables a dramatic reduction in molten sodium battery operating temperature from near 300° C. to less than 120° C. As an example, stable electrochemical cycling was demonstrated in a high voltage (3.65 V) sodium battery comprising a sodium iodide-gallium chloride (NaI—GaCl 3 ) molten salt catholyte for over 8 months at 110° C. The combination of high voltage, stable cycling behavior, and practical current densities supported by a molten catholyte enables a new generation of transformative high performance, low temperature molten sodium batteries.

Spoerke, Erik D.↗
DOE OSTI2026

Feasibility of Passive MOSFET Paralleling for Photovoltaic Current-Voltage Curves

Current-voltage curves are an important method of characterizing Photovoltaic (PV) Modules. NREL has developed several low-cost MOSFET-based devices that can characterize PV cells and modules. The size of PV modules that can be measured is limited by the power limitations of a single MOSFET. By using multiple MOSFET devices, each can operate at a lower current, paralleled on resistance is also decreased allowing for higher power loads. Operating multiple devices in parallel can cause an imbalance in current, thus causing some devices to conduct more, pushing them into a thermal runaway condition. To investigate this, an active feedback circuit was tested with paralleled devices using a PV module load. The efficacy, limitations, and design considerations of using parallel MOSFET loads for PV characterization are explored. This work is not new, but the implementation of a paralleled architecture in a low cost characterization tool is novel.

14 SOLAR ENERGY↗
DOE OSTI2022

Understanding the Role of Order in Y‐Series Non‐Fullerene Solar Cells to Realize High Open‐Circuit Voltages

Abstract Non‐fullerene acceptors (NFAs) as used in state‐of‐the‐art organic solar cells feature highly crystalline layers that go along with low energetic disorder. Here, the crucial role of energetic disorder in blends of the donor polymer PM6 with two Y‐series NFAs, Y6, and N4 is studied. By performing temperature‐dependent charge transport and recombination studies, a consistent picture of the shape of the density of state distributions for free charges in the two blends is developed, allowing an analytical description of the dependence of the open‐circuit voltage V OC on temperature and illumination intensity. Disorder is found to influence the value of the V OC at room temperature, but also its progression with temperature. Here, the PM6:Y6 blend benefits substantially from its narrower state distributions. The analysis also shows that the energy of the equilibrated free charge population is well below the energy of the NFA singlet excitons for both blends and possibly below the energy of the populated charge transfer manifold, indicating a down‐hill driving force for free charge formation. It is concluded that energetic disorder of charge‐separated states has to be considered in the analysis of the photovoltaic properties, even for the more ordered PM6:Y6 blend.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Material Design Strategy for Halide Solid Electrolytes Li 3 MX 6 (X = Cl, Br, and I) for All-Solid-State High-Voltage Li-Ion Batteries

Although several solid electrolyte (SE) candidates have been explored, achieving the necessary combination of performance, stability, and processability has been challenging. Recently, several lithium ternary halides have attracted increasing attention for SEs because of their favorable combination of high ionic conductivity and wide electrochemical window. This study aims to provide a material design strategy for lithium halides Li 3 MX 6 (X = Cl, Br, and I) for high-voltage all-solid-state Li-ion batteries, achieved by the systematic investigation of crystal structures, phase and electrochemical stabilities, electronic and mechanical properties, and ionic conductivities. Calculation results reveal that the electronegativity difference between M and X affects structural properties and stabilities. Weak Coulomb interactions in Li 3 MX 6 result in the preference of the monoclinic phase, and the oxidation potential and chemical stability against the cathode materials of Li 3 MX 6 increase for relatively small X. Chlorides exhibit the highest oxidation potential (~4.3 V) among Li 3 MX 6 , suggesting that chlorides are appropriate SEs for high-voltage cathodes. The band gap and elastic moduli increase for relatively small X, suggesting the relatively low electronic conductivity and elastic deformability of chlorides. Chlorides with transition metals typically exhibit trigonal phases, a wider electrochemical stability window, a larger band gap, and higher elastic moduli compared to other types of halides. Additionally, chloride Li 3 MCl 6 is expected to have relatively high ionic conductivities with the aliovalent substitution of M 3+ to Zr 4+ and the anion mixing of Cl with Br. The findings of this study will provide fundamental guidelines for the development of lithium halide SEs for high-voltage all-solid-state Li-ion batteries.

25 ENERGY STORAGE↗
DOE OSTI2021

AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) using plasma deposited BN as gate dielectric

AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) were fabricated on Si substrates with a 10 nm boron nitride (BN) layer as a gate dielectric deposited by electron cyclotron resonance microwave plasma chemical vapor deposition. The material characterization of the BN/GaN interface was investigated by X-ray photoelectric spectroscopy (XPS) and UV photoelectron spectroscopy. The BN bandgap from the B1s XPS energy loss is ~5 eV consistent with sp2 bonding. The MISHEMTs exhibit a low off-state current of 1 × 10 –8 mA/mm, a high on/off current ratio of 10 9 , a threshold voltage of –2.76 V, a maximum transconductance of 32 mS/mm at a gate voltage of –2.1 V and a drain voltage of 1 V, a subthreshold swing of 69.1 mV/dec, and an on-resistance of 12.75 Ω·mm. The interface state density (D it ) is estimated to be less than 8.49 × 10 11 cm –2 eV –1 . Gate leakage current mechanisms were investigated by temperature-dependent current–voltage measurements from 300 K to 500 K. The maximum breakdown electric field is no less than 8.4 MV/cm. Poole–Frenkel emission and Fowler–Nordheim tunneling are indicated as the dominant mechanisms of the gate leakage through the BN gate dielectric at low and high electric fields, respectively.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Electrolyzer energy dominates separation costs in state-of-the-art CO 2 electrolyzers: Implications for single-pass CO 2 utilization

In low-temperature CO 2 electrolysis, a fundamental trade-off exists between maximizing electrolyzer performance and minimizing downstream CO 2 recovery. Here, by coupling a down-the-gas-channel electrolyzer model with a techno-economic analysis, we find that the optimal single-pass CO 2 conversion for ethylene production is typically low—on the order of 5%–10%—although larger optima are found if the H 2 faradic efficiency is very low. Similarly, strategies for eliminating carbonate crossover require more energy than downstream gas separation if they increase the cell potential by ~0.2 V; however, when CAPEX are accounted for, this “break-even” voltage increases to ~ 0.4 to 0.8 V for electricity prices varying from 6c/kWh to 1.5c/kWh. These findings are a consequence of the low energy requirements of industrial gas separation relative to electrochemical CO 2 reduction. Under most circumstances, maintaining near-optimal electrolyzer performance is more important than reducing or eliminating downstream gas separations.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Single-event burnout in homojunction GaN vertical PiN diodes with hybrid edge termination design

GaN devices play a major role in modern electronics, providing high-power handling, efficient high-frequency operation, and resilience in harsh environments. However, electric field crowding at the edge of the anode often limits its full potential, leading to single-event effects (SEEs) at lower bias voltages under heavy ion radiation. Here, in this work, we report on the performance of homojunction GaN vertical PiN diodes with a hybrid edge termination design under heavy ion irradiation, specifically, oxygen ions, chlorine ions, Cf-252 fission fragments, and alpha particles from an Am-241 source. The unique hybrid edge termination (HET) design provides better electric field management, preventing breakdown from occurring at the edge of the anode at lower voltages. The results of this study reveal that these devices exhibit excellent tolerance to 12-MeV oxygen and 16-MeV chlorine ions, owing to their low linear energy transfer (LET) and range in GaN. However, single-event burnout (SEB) is observed during the Cf-252 exposure at about 50% of the diodes' electrical breakdown voltage due to the presence of higher LET and longer-range ions. Optical and scanning electron microscopy (SEM) reveal that the damage that caused by SEB lies close to the center of these devices rather than the anode edge. Devices with junction termination extension (JTE) instead of HET edge termination also show similar SEB when irradiated with Cf-252 fission fragments. Physical damage due to SEB occurs at the edge of the anode for these devices. These comparative results show the benefits of HET for enhancing the resistance of GaN-based PiN diodes to heavy ion irradiation.

42 ENGINEERING↗
DOE OSTI2020

High Capacity for Mg 2+ Deintercalation in Spinel Vanadium Oxide Nanocrystals

Nonaqueous Mg batteries can theoretically reach high energy density with cost-effective materials, yet no such device to date has performance competitive with Li-ion technologies. A major barrier is the need for oxide cathodes that combine high capacity and voltage. Very few oxides have shown intrinsic ability for Mg 2+ intercalation in electrolytes with acceptably low content of H2O. Herein, we demonstrate that nanocrystals of MgV 2 O 4 can reach high capacity for Mg 2+ deintercalation with a mechanism that preserves their spinel framework, validated through measurements with different chemical and structural sensitivity. The structural stability contrasts with other phases where reaching high capacity required distortions that introduce undesirable mechanical strain. The favorable properties of the oxide allowed cycling in a full cell with Mg metal. This work reveals new insights into the viability of multivalent intercalation in oxides, meeting a milestone toward the feasibility of high-voltage batteries with either Mg metal or Mg-ion anodes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Reverse-Bias Resilience of Monolithic Perovskite/Silicon Tandem Solar Cells

Metal halide perovskites have rapidly enabled a range of high-performance photovoltaic technologies. However, catastrophic failure under reverse voltage bias poses a roadblock for their commercialization. In this work, we conduct a series of stress tests to compare the reverse-bias stability of perovskite single-junction, silicon single-junction, and monolithic perovskite/silicon tandem solar cells. We demonstrate that the tested perovskite/silicon tandem devices are considerably more resilient against reverse bias compared with perovskite single-junction devices. The origin of such improved stability stems from the low reverse-bias diode current of the silicon subcell. This translates to dropping most of the voltage over the silicon subcell, where such a favorable voltage distribution protects the perovskite subcell from reverse-bias-induced degradation. These results highlight that, compared with other perovskite technologies, monolithic perovskite/silicon tandems are at a higher technology readiness level in terms of tackling the reverse bias and partial shading challenges, which is a considerable advantage toward commercialization.

halide perovskite↗
DOE OSTI2019

Comparing smoothing techniques for extracting MOSFET threshold voltage

Measurement noise acts as a barrier to the accurate calculation of threshold voltage by derivative-based extraction methods. We examined several smoothing techniques and their effects on measurement noise in threshold voltage extracted by the linear extrapolation method and the g m /I d method. We applied these techniques on a set of SiC power MOSFET devices before and after they had undergone accelerated thermal testing. The smoothing methods examined are least-squares polynomial fitting, low-pass filtering using Butterworth and Chebyshev fillers, and differential smoothing. These methods are compared by their shift in threshold voltage compared to unsmoothed data and their standard deviation among the measurements of each device. All methods performed poorly at smoothing when extracting via the g m /I d due to the large amounts of high-magnitude subthreshold noise, mostly tending to extract threshold voltages far below the expected value. Differential smoothing provided results closest to the expected value with an absolute shift of 1.2 V on average. The smoothing methods performed better with the LE method. On a failed device, all smoothing methods except polynomial smoothing preserved the large threshold voltage anomaly for four out of five measurements. These results show that choice of smoothing method, if used must be evaluated based on the device and extraction method.

42 ENGINEERING↗
DOE OSTI2023

Nonvolatile Memristive Effect in Few-Layer CrI 3 Driven by Electrostatic Gating

The potential of memristive devices for applications in nonvolatile memory and neuromorphic computing has sparked considerable interest, particularly in exploring memristive effects in two-dimensional (2D) magnetic materials. However, the progress in developing nonvolatile, magnetic field-free memristive devices using 2D magnets has been limited. In this work, we report an electrostatic-gating-induced nonvolatile memristive effect in CrI 3 -based tunnel junctions. The few-layer CrI 3 -based tunnel junction manifests notable hysteresis in its tunneling resistance as a function of gate voltage. We further engineered a nonvolatile memristor using the CrI 3 tunneling junction with low writing power and at zero magnetic field. We show that the hysteretic transport observed is not a result of trivial effects or inherent magnetic properties of CrI 3 . We propose a potential association between the memristive effect and the newly predicted ferroelectricity in CrI 3 via gating-induced Jahn–Teller distortion. Furthermore, our work illuminates the potential of 2D magnets in developing next-generation advanced computing technologies.

2D magnet↗
DOE OSTI2021

MX Anti-MXenes from Non-van der Waals Bulks for Electrochemical Applications: The Merit of Metallicity and Active Basal Plane

Two-dimensional transition-metal compounds (2DTMCs) are promising materials for electrochemical applications, but 2DTMCs with metallicity and active basal planes are rare. In this work, we proposed a simple and effective strategy to extract 2DTMCs from non-van der Waals bulk materials and established a material library of 79 2DTMCs, which we named as anti-MXenes since they are composed of one M atomic layer sandwiched by two X atomic layers. By means of density functional theory computations, 24 anti-MXenes were confirmed to be thermodynamically, dynamically, mechanically, and thermally stable. The metallicity and active basal plane endow these anti-MXenes with potential as excellent electrode materials, for example, as electrocatalysts for hydrogen evolution reactions (HER). Among the noble-metal free anti-MXenes with favorable H-binding, CuS can boost HER at the whole range of H coverages, while CoSi, FeB, CoB, and CoP show promise for HER at some specific H coverages. The active sites are the tetra-coordinating nonmetal atoms at the basal planes, thus rendering a very high density of active sites for these materials. CoB is also a promising anode material for lithium-ion batteries, showing low Li diffusion energy barriers, a very high capacity, and a suitable open circuit voltage. Overall, this work promotes the “computational exfoliation” of 2D materials from non-van der Waals bulks and exemplifies the applications of anti-MXenes in various electrochemical processes.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Role of deep levels and barrier height lowering in current-flow mechanism in 150 μ m thick epitaxial n-type 4H–SiC Schottky barrier radiation detectors

Schottky barrier detectors (SBDs) require larger surface areas than conventional electronics to increase the detection efficiency although such SBDs manifest large diode ideality factors due to inhomogeneous areal distribution of surface barrier height (SBH). Inhomogeneous SBH distributions lead to various current flow mechanisms in SBDs, which need to be identified to optimize detector performance. In this Letter, we identify the current flow mechanism in large area Schottky barrier diodes for radiation detection fabricated on 150 μm thick n-4H–SiC epitaxial layers. The analysis of temperature-dependent forward current–voltage (I–V–T) characteristics of SBDs revealed two linear regions in current–voltage curves up to 450 K, one corresponding to the current flow through a low barrier patch, while the other corresponds to that of average barrier distribution. Applying a SBH distribution model to the reverse I–V–T characteristics, an activation energy of 0.76 eV for the current flow over the Schottky barrier was calculated. Additionally, the activation energy did not directly correspond to any of the defect levels observed from the deep level transient spectroscopy (DLTS). Above 450 K, a Schottky type barrier lowering suggested a current flow through a low barrier patch of ≈ 0.8 eV. The absence of any SBH lowering below 450 K indicated that the current corresponded to a neutrally charged trap level at ≈ 0.6 eV below the conduction band edge, which was consistent with DLTS measurements revealing the presence of an electron trap level Z1/2 at 0.59 eV below the conduction band edge.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Perovskite on Silicon Tandem Solar Cells

Since installing solar panels costs more than the panels themselves, it is critically important to improve the efficiency of the panels so that fewer panels need to be installed. More than 90% of all panels being manufactured are made with silicon solar cells. The most promising approach to reach 27% is to upgrade the panels by adding a second set of cells with a larger band gap that can harvest the higher energy photons in the visible spectrum and generate a higher voltage than silicon is capable of generating. Perovskite semiconductors are very promising for low-cost tandems because they have high band gaps, can be rapidly printed from solutions and have been used to make 25% efficient cells by themselves. If we show that it is possible to make stable tandems with 30% efficiency using materials that could be deposited at low cost and that the energy yield will not be compromised, then private companies would be able to raise the capital needed to manufacture this technology. The main metrics for this project are the power conversion efficiency of a lab-scale perovskite/silicon tandem and the ability to maintain a high power conversion efficiency in perovskite solar cells after accelerated operational stability testing under maximum power point at elevated temperature and 1 sun illumination. In short, this project demonstrates improvements to the perovskite absorber layer, contacts for the perovskite solar cell, and transparent oxide layers for window electrodes to achieve tandem efficiencies of 25% after one year and 27% after two years. By the end of the project, we identify strategies to further improve light management in the tandem devices and outline a pathway to reach 30%.In parallel, stability testing is conducted to evaluate said absorber and contact layers in the perovskite top cell, demonstrating 1000 hours of operation with less than 10% degradation at 1 sun. Our work on this project has made a leading impact on the development of perovskite/silicon tandems. The triple halide perovskite that we developed using iodide, bromide, and chloride and published in Science in March 2020 has received significant interest from other experts in the field at conferences. We took a silicon bottom cell with 21% efficiency, a technology that is responsible for a $30 billion market, and improved it by 30% relative. In addition, we have demonstrated impressive stability of our perovskite semitransparent top cells used in the tandems, showing for the first time packaged devices that pass a variety of IEC stability tests including damp heat, temperature cycling, and UV exposure tests.

14 SOLAR ENERGY↗
DOE OSTI2023

Time-domain simulation of the crab cavity/beam interaction

The Electron-Ion Collider (EIC) will employ crab cavities to maximize luminosity. A time-domain simulation is developed to study the interaction between the particle beam and the crab cavities in the EIC, including the Low-Level RF (LLRF) feedback loops. The simulation is validated through power and induced voltage estimates. We then use the simulation tool to study the beam loading effects on the crabbing voltage and thus on the beam transverse position and tilt. We also study the crabbing voltage regulation and transmitter power transients as a function of the LLRF design.

43 PARTICLE ACCELERATORS↗
DOE OSTI2024

Segmented wall-less hall thruster

Disclosed is a miniaturized plasma propulsion device with minimized surface area of the thruster walls exposed to the plasma and, as a result, reduced plasma-surface interactions including a set of segmented electrodes to facilitate the following improvements compared to relevant existing technologies: 1) control of the plasma flow including focusing of the plasma plume 2) increase of the thrust 2) reduction of inefficiencies associated with the electron cross field current, and 3) mitigation of low frequency oscillations. The electrodes affect all these actions when a DC or modulated voltage is applied to one or all of them with the same or different amplitudes, with the same or different frequencies or phases which are all optimized to realize the best performance through changes in the acceleration and/or ionization regions. In addition, the applied voltage to the main electrodes may also be modulated.

Simmonds, Jacob↗