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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 793 records · Page 44
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

ARPA-E PNDIODES "PN Junctions by Ion Implantation" Project (Final Report)

Electricity accounts for nearly 40% of the energy generated in the United States, of which 65% is lost to electrical system inefficiency before reaching end-use sectors. Power electronics will play a growing role in this distribution and end-use, with up to 80% of electricity estimated to pass through power electronics from generation to consumption by 2030. This gives technical improvements in power electronics enormous potential to drive efficiency gains throughout the U.S. economy. Current Si-based power architectures including MOSFETs and IGBTs are limited by high losses, low switching frequency, and poor high-temperature performance. Given the material properties of GaN, devices can exhibit a given turn-on resistance and breakdown voltage with a minute fraction of the area of a Si device—all with higher switching speeds. While n-type doping of III-nitrides has reached a high level of maturity and integration into commercialized products, p-type doping presents distinct challenges that requires continued research. The success of the next generation of GaN-based power devices depends in large part on the ability to form selective-area p-type regions, which can be accomplished by ion implantation of the prevailing acceptor dopant, Mg. This approach is relatively inexpensive and is a fab-ready processing step for creation of current-generation power electronic devices including BJTs, IGBTs, and diode rectifiers. However, ion implantation induces lattice damage and creates point defects within the material, which negatively impacts dopant activation annealing. These forms of damage may be removed by high-temperature annealing, however short annealing time and higher pressures are required to prevent decomposition of the material. We approach this challenge through an innovative combination of approaches toward obtaining high-conductivity p-type GaN. By the novel employment of a gyrotron, a microwave source that can be shaped into a highly localized beam to dissipate very high power in a semiconductor target, a wafer of GaN can be annealed in short (<2 s) ‘pulses’ at temperatures of 1450 °C (2640 °F) to achieve p-type activation without appreciable surface degradation. The p-type activation of Mg-implanted GaN can be further aided by co-implantation with N, believed to enhance the removal of point defects that compensate the acceptors dopant. Elevation to such high temperatures for even a short time induces degradation of GaN-to overcome, we have implemented additional measures to retain high-quality crystalline GaN while removing implant damage and activating Mg dopant. A bilayer cap of AlN is deposited by a combination of chemical and physical vapor deposition to protect the GaN surface. To prevent decomposition of GaN loss of N during annealing, a custom vessel—to contain pressurized N while allowing injection of microwave energy—is employed. By detailed study of the interaction of various measures that are implemented to protect the sample surface (GaN), activate the implanted dopants, and mitigate damage of the lattice heating damage during annealing, we are able to achieve p-type GaN and observe recovery of the crystal and removal of substantial density of defects created during the implantation process.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2022

Thermal Energy Grid Storage (TEGS) Using Multi-Junction Photovoltaics (MPV) (Final Technical Report)

The project aimed to develop a thermal energy storage battery that converts electricity to heat and stores heat at ultra-high temperatures (>2000°C) in graphite blocks. The thermal battery discharge uses TPV cells that directly convert thermal energy to electrical energy without any moving parts. All components of this technology were successfully demonstrated at the laboratory scale in this project. Development of extremely low cost (< $20/kWh) grid level energy storage is a crucial necessity to reach high penetrations of renewables. The thermal battery technology developed in this project is expected to meet the cost targets that would enable full renewable penetration. The project focused on four key aspects of this technology: Converting electricity to ultra-high temperature heat: This was done through development of graphite Joule heaters. Major issues related to arcing, heater evaporation and deterioration due to long term oxidation were addressed to ensure lifetime exceeding the service lifetime of the battery. Converting ultra-high temperature heat back to electricity: This was done through development of beyond state-of-the-art TPV cells. We demonstrated energy conversion efficiency of >40% that is a world record and exceeds the average energy conversion efficiency of turbines in the USA. The findings are peer-reviewed and published in Nature, and received a wide media attention globally. Protecting the TPV cells to ensure lifetime: Deposition of volatilized material, such as sublimated material or particles, on the TPV cell could greatly reduce the efficiency and lifetime of the TPV cells by blocking their view to the heat source and causing cell overheating. In this project we developed and demonstrated an approach that reduces the deposition rate, ensuring long > 30 year life. Technoeconomic feasibility and commercialization: In collaboration with the project’s technical advisory board, we developed a technoeconomic model. The model shows that, at large scales (> 1GWh) the thermal battery technology is projected to reach a cost of energy stored below $10/kWh-e, with a cost per unit power < $0.5/W-e and a roundtrip efficiency of 50%. These results, along with the technical achievements in the project led to the creation of a startup company (i.e., Fourth Power) that is pursuing commercialization of the technology.

25 ENERGY STORAGE↗