Analysis of temperature-dependent dark current transport mechanism for GaAs-based blocked-impurity-band (BIB) detectors
Temperature-dependent dark current transport mechanism has been analyzed for GaAs-based blocked-impurity-band detectors. Device structure, processing steps and physical models are described in detail. In this work, the analysis of dark current transport mechanism has been greatly simplified by electron drift current related discussion based on the assumption that the diffusion current and the generation–recombination current as two dominating components of dark current in the absorbing layer can be equivalent to the electron drift current in the blocking layer. After confirming this assumption, our discussion focuses on why dark current is a monotonically increasing function of operation temperature for a fixed anode bias. Our results reveal that from dark current suppression point of view, low donor doping level and low operation temperature are preferred.