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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 793 records · Page 44
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Engineering the fracture resistance of 2H-transition metal dichalcogenides using vacancies: An in-silico investigation based on HRTEM images

Vacancy engineering of 2H-transition metal dichalcogenides (2H-TMDs) has recently attracted great attention due to its potential to fine-tune the phonon and opto-electric properties of these materials. From a mechanical perspective, this symmetry-breaking process typically reduces the overall crack resistance of the material and adversely affects its reliability. However, vacancies can trigger the formation of heterogeneous phases that synergistically improve fracture properties. In this study, using MoSe2 as an example, we characterize the types and density of vacancies that can emerge under electron irradiation and quantify their effect on fracture. Molecular dynamic (MD) simulations, employing a re-parameterized Tersoff potential capable of accurately capturing bond dissociation and structural phase changes, reveal that isolated transition metal monovacancies or chalcogenide divacancies tend to arrest the crack tip and hence enhance the monolayer toughness. In contrast, isolated chalcogenide monovacancies do not significantly affect toughness. The investigation further reveals that selenium vacancy lines, formed by high electron dose rates, alter the crack propagating direction and lead to multiple crack kinking. Using atomic displacements and virial stresses together with a continuum mapping, displacement, strain, and stress fields are computed to extract mechanistic information, e.g., conditions for crack kinking and size effects in fracture events. The study also reveals the potential of specific defect patterns, “vacancy engineering,” to improve the toughness of 2H-TMDs materials.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Inversion of downhole electrical measurements for proppant mapping using very fast simulated annealing

Proppant mapping is critical for optimizing fracture treatment design and improving wells’ productivity. An electrode-based resistivity tool concept was developed earlier for proppant mapping in cased-hole wells. An array of insulating gaps is installed and cemented in place as a permanent part of the casing string. The electrical measurements are performed by imposing a voltage across each insulating gap, one at a time, before and after hydraulic fracture operations. The voltages across other insulating gaps near the transmitter gap are recorded. The method relies on direct excitation of the casing, which is expected to overcome the severe limitations of induction tools in cased-hole wells. A forward model based on a finite volume method has been developed to simulate the tool’s response to one or multiple fractures. To enable the implementation of such a practical system in multistage fractured horizontal wells, a fast and robust inversion approach is required. To that end, we have developed a divide-and-conquer approach based on a global optimization algorithm very fast simulated annealing (VFSA). Specifically, the original inverse problem is divided into subproblems and each subproblem can be solved separately using VFSA. The results indicate that our approach can invert the data and output widths and radii of multiple fractures without requiring a large number of forward simulations. The robustness of the inverse solver is also tested by adding Gaussian noise to the synthetic data. We tested example cases that demonstrate that when up to 5% noise is introduced, VFSA still provides very accurate inversion results with moderate uncertainties. Inversion results with some more realistic conditions, e.g., tilted fractures, complex fractures, and so on, are also presented.

Geochemistry & Geophysics↗
DOE OSTI2022

Modelling of electrostatic ion-scale turbulence in divertor tokamaks with the gyrokinetic code $\mathrm{COGENT}$

Here, continuum gyrokinetic simulations of electrostatic ion scale turbulence are presented for the case of a diverted (single-null) tokamak geometry. The simulation model, implemented in the finite-volume code COGENT, solves the long-wavelength limit of the full-F gyrokinetic equation for ion species coupled to a vorticity equation for electrostatic potential variations, where a fluid model is used for an electron response. The model describes the ion scale ion temperature gradient (ITG) and resistive drift modes as well as neoclassical ion physics effects. Different turbulence regimes are observed depending on the plasma profiles, and the roles of a self-consistent background electric field and an X-point geometry are explored. In particular, increasing the pedestal density gradient and the corresponding radial electric field is demonstrated to suppress the ITG turbulence, whereas the same edge plasma background can still be destabilized by the resistive modes when the plasma resistivity is increased. The effects of X-point geometry are assessed by comparing cross-separatrix simulations with counterpart calculations performed for a toroidal annulus geometry. For the simulation parameters considered, similar global behaviour is observed in both cases, whereas strong local suppression of turbulence fluctuations is demonstrated near the X-point for the case of a single-null geometry.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Direct extracellular electron transfer for high electricity production by a new type of marine microalgae Nannochloropsis sp. HDY2

A growing number of autotrophic microalgae have been found to have extracellular electron transfer (EET) capabilities. However, the mechanism and function of EET pathway in microalgae have not thoroughly investigated. This study presents evidence of direct extracellular electron transfer (DEET) for impressive electricity production by a new type of marine microalgae Nannochloropsis sp. HDY2 in the single and double-chamber photosynthetic microbial fuel cells (PFMCs). The electricity generation of Nannochloropsis sp. is strongly inhibited by photosynthetic inhibitors, suggesting that electrons involved in the extracellular electron transfer (EET) of Nannochloropsis sp. are derived from photosynthesis. The results of dialysis bag and supernatant experiments suggest that Nannochloropsis sp. produce electricity by DEET. The lack of typical redox peaks in cyclic voltammetry (CV) analysis and the appearance of extracellular filamentous component (EFC) around cells support this finding. Under high light conditions, the chlorophyll a and carotenoid content of Nannochloropsis sp. rapidly decreased while the fatty acid synthesis and electricity generation increased, suggesting that the DEET pathway play an active role in the resistance to photooxidation of Nannochloropsis sp. In conclusion, this study provides the first evidence that Nannochloropsis has the capability of performing EET and sheds new light on the positive role of DEET on the environmental adaptation of Nannochloropsis.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

The Effect of Dopant Concentration and Annealing Treatments on N-Type Iodine Doped CdTe

We report properties of highly conducting n-type cadmium telluride single crystals doped with iodine (CdTe:I). These crystals were grown with dopant concentrations in the range of 10^17 cm-3 to 10^19 cm-3 by Modified Vertical Bridgman (MVB) melt growth. Post-growth dopant activation, including Cd annealing, Te annealing, and rapid thermal annealing (RTA), was applied to improve free carrier density. The structural, optical, and electrical properties were analyzed by Glow Discharge Mass Spectroscopy (GDMS), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), Photoluminescence Spectroscopy (PL), optical absorption, Hall measurements, Capacitance-Voltage (CV) measurements, and time-resolved photoluminescence (TRPL). The results indicate that Cd annealing is the most effective activation method to get 100% donor activation (n is approximately 2 x 10^18 cm-3), which is close to the room temperature solubility limit of iodine. This leads to the lowest resistivity and the highest mobility. Moreover, this data suggests a potential role of Cd vacancy-related defects on electrical self-compensation.

annealing↗
DOE OSTI2022

Enhancing Coking Tolerance and Stability of SOFC Anodes Using Atomic Layer Deposition (ALD) of Oxide Thin Films

The overall objective of this project was to use atomic layer deposition (ALD) to add modifiers to the surfaces of conventional Ni-YSZ cermet, solid oxide fuel cell (SOFC) anodes to enhance both their tolerance to hydrocarbon fuels by decreasing their propensity to form coke deposits, and to increase redox stability. Studies of the use of ALD to modify analogous supported metal powder catalysts were also added to the scope of the project in response to our industrial partner, Atrex going out of business. The initial portion of the program focused on designing and building the ALD reactor required for deposition of the oxide modifier films. Studies of the oxide modifier films on the coking tolerance and of redox properties of Ni-cermet anodes were then carried out. These studies demonstrated that while surface oxide modifiers were able to impart some coking resistance this only occurred for a relatively small range of operating conditions (e.g., temperature, steam-to-fuel ratio, etc.) and not at the level that would be required for operating in methane fuel at low steam-to-methane ratios. In light of this observation, we focused on assessing another approach to enhance anode coking resistance which eliminated bulk Ni from the anode. This approach made use of electronically conducting perovskite films to provide electrical conductivity in the anode, while using small amounts of Ni or other metals, such as Pt, deposited using ALD as the anode oxidation catalyst. This approach proved to be quite promising at both imparting coking resistance and redox stability.

03 NATURAL GAS↗
DOE OSTI2020

Comparison of Thermal Management Approaches for Integrated Traction Drives in Electric Vehicles

The continuous push to increase power densities of electric vehicle (EV) traction drive systems necessitates combining electric motor and power electronics into one unit. A single, compact traction drive unit with fewer interconnecting components also facilitates fast, automated assembly of electric vehicles, driving production costs down and enabling wider adoption of EVs. There are a number of challenges associated with the integration of power electronics with the electric machine, including thermal management of the combined traction drive system. However, one important benefit of integration from the thermal management system perspective is the potential for using a single fluid loop instead of two separate cooling systems for the electric machine and the power electronics/inverter. This paper reviews several integration approaches and, employing finite element analysis (FEA), compares thermal management solutions for the combined electric machine and power electronics systems. Namely, three different scenarios are modeled: (1) independent component (motor and power electronics) cooling, which is compared to the combined cooling system approach for (2) radially and (3) axially integrated power electronics modules into the motor enclosure. Temperature distributions for selected thermal loads and thermal resistances from the key heat-generating components to the cooling fluid are compared for each scenario.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

Origins of anisotropic transport in the electrically switchable antiferromagnet Fe 1/3 NbS 2

Recent experiments on the antiferromagnetic intercalated transition metal dichalcogenide Fe 1/3 NbS 2 have demonstrated reversible resistivity switching by application of orthogonal current pulses below its magnetic ordering temperature, making Fe 1/3 NbS 2 promising for spintronics applications. Here, we perform density functional theory calculations with Hubbard U corrections of the magnetic order, electronic structure, and transport properties of crystalline Fe 1/3 NbS 2 , clarifying the origin of the different resistance states. The two experimentally proposed antiferromagnetic ground states, corresponding to in-plane stripe and zigzag ordering, are computed to be nearly degenerate. In-plane cross sections of the calculated Fermi surfaces are anisotropic for both magnetic orderings, with the degree of anisotropy sensitive to the Hubbard U value. The in-plane resistance, computed within the Kubo linear response formalism using a constant relaxation time approximation, is also anisotropic, supporting a hypothesis that the current-induced resistance changes are due to a repopulating of antiferromagnetic domains. Our calculations indicate that the transport anisotropy of Fe 1/3 NbS 2 in the zigzag phase is reduced relative to stripe, consistent with the relative magnitudes of resistivity changes in experiment. Finally, our calculations reveal the likely directionality of the current-domain response, specifically, which domains are energetically stabilized for a given current direction.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Electrical Analysis of Pulsed Laser Annealed Poly-Si:Ga/SiOx Passivating Contacts

High-efficiency single crystalline silicon (c-Si) solar cells require precise control of dopant diffusion profiles and highly active doping concentrations through thermal annealing. Conventional furnace annealing has been successfully employed for dopant diffusion in aluminum back-surface field (Al-BSF), passivated emitter and rear contact (PERC), and Topcon cells. However, furnace annealing limits some next-generation polycrystalline silicon (poly-Si) on SiOx passivating contacts. This limitation largely affects p-type passivating contacts by not being able to: 1) control the dopant diffusion accurately to prevent B segregation at the SiOx and c-Si interface; and 2) provide highly activated doping concentrations for low contact resistivity. In this contribution, we use a nanosecond excimer laser to examine the passivation quality and electrical performance of both B- and Ga-doped poly-Si/SiOx passivating contacts. The core of this method is to take advantage of the nonequilibrium nature of the anneal through rapid melting and recrystallizing the poly-Si in a short timescale and to achieve doping concentrations above the solid solubility limit. Simulations were performed on polished surfaces to visualize the doping diffusion profiles under different laser conditions, and secondary ion mass spectrometry (SIMS) was used to verify the experimental diffusion profiles post pulsed laser melting (PLM). The results show the dopant diffusion profiles can be tuned precisely through PLM. The electrical analysis using VdP-Hall measurements reveals that the active doping concentration reached 10^21 cm-3 for B and ~2×10^21 cm-3 for Ga in poly-Si, far exceeding their solid solubility limit in Si, with a nearly 100% dopant activation achieved for B, and 20% for Ga. This highly activated dopant profile results in a low contact resistivity of <15 mO·cm^2 for B-doped contacts and <40 mO·cm^2 for Ga-doped contacts. We demonstrate that the passivation quality of the laser annealed contacts shows a linear dependency with the laser energy density and the number of pulses. PLM was also performed on random pyramid textured samples, and we found that preferential melting exists for the tips of pyramids, which can be pursued further for selective pinhole opening. Additionally, we perform thermal stability tests of these hyperdoped passivating contacts and show that under certain laser conditions, the B-doped samples exhibit good thermal stability with near full activation for temperatures up to 800°C. Lastly, we transfer this technique to a larger area by overlapping laser spots and show uniform passivation quality and electrical performance. We are currently implementing this PLM annealed p-type passivating contacts into double-side back-junction poly-Si/SiOx passivating contact devices. Our results show that PLM can not only enable the next generation of high-efficiency c-Si photovoltaics technology but can also benefit the c-Si integrated circuit industry through hyperdoping other semiconductors with atoms that may otherwise have a low solubility.

doping diffusion profile↗
DOE OSTI2024

Porous ceramic supports for resistively heated hybrid gas sorbents

A porous sorbent ceramic product includes a three-dimensional structure having an electrically conductive ceramic material, wherein the conductive ceramic material has an open cell structure with a plurality of intra-material pores, a sorbent additive primarily present in the intra-material pores of the conductive ceramic material for adsorption of a gas, and at least two electrodes in electrical communication with the conductive ceramic material.

Ellebracht, Nathan C.↗
DOE OSTI2021

Boost of the Bio-memristor Performance for Artificial Electronic Synapses by Surface Reconstruction

Biomaterial-based memristors (bio-memristors) are often adopted to emulate biological synapse functions and applied to construct neural computing networks in brain-inspired chip systems. However, the randomness of conductive filament formation in bio-memristors inhibits their switching performance by causing the dispersion of the device-switching parameters. In this case, a facile porous silk fibroin (p-SF) memristor was obtained through a protein surface reconstruction strategy, in which the size of the hole can be adjusted by the density of hybrid nanoseeds. Here, the porous SF memristors exhibit greatly enhanced electrical characteristics, including uniform I-V cycles, centralized distribution of the switching voltages, and both high and low resistances, compared to devices without pores. The results of three-dimensional (3D) simulations based on classical density functional theory (cDFT) suggest that the reconstructed pores in the SF layers guide the formation and fracture of Ag filaments under an electric field and enhance the overall conductivity by separating Ag + ion and electron diffusion pathways. Ag + ions are predicted to preferentially diffuse through pores, whereas electrons diffuse through the SF network. Interestingly, the device conductance can be bidirectionally modulated gradually by positive and negative voltages, can faithfully simulate short-term and long-term plasticity, and can even realize the triplet-spike-timing-dependent plasticity (triplet-STDP) rule, which can be used for pattern recognition in biological systems. The simulation results reveal that a memristor network of this type has an accuracy of ~95.78% in memory learning and the capability of pattern learning. This work provides a facile technology route to improve the performance of bionic-material memristors.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Performance and durability of electrically conductive tape for shingled Si heterojunction technology cells

We report electrically conductive tape (ECT) was characterized and used to assemble shingled cell strings at low temperature to achieve high reliability Pb- and Ag-free interconnections. The volume resistivity for two considered ECTs are 0.13 ± 0.06 mΩ·cm and 0.47 ± 0.20 mΩ·cm and specific contact resistances, 6.85± 2.00 mΩ·cm 2 and 6.30 ± 0.37 mΩ·cm 2 using the emerging IEC 62788-8-1 Technical Specification for assessment of electrically conductive adhesives (ECA). Durability and performance of the technology in glass–glass mini modules were evaluated with temperature cycling, damp heat testing, and combined-accelerated stress testing (CAST). Through temperature cycling (-40°C to 85°C) applying five times the mini module short-circuit current in forward bias and in the multi climate CAST protocol, there was negligible degradation of fill factor after replacing connectors at the modules' cable leads; however, CAST resulted in short circuit current loss attributed to degradation in light collection by the cells, not the ECT. The IEC 61215-2 85°C, 85% relative humidity damp heat testing showed susceptibility of the HJT cells to effects of humidity in the electroluminescence intensity around the module perimeter that degraded power performance by 4% (relative). Contrasting the IEC 61215-2 qualification testing-based damp heat testing with CAST, factors such as the optical stress of CAST may precipitate the degradation of the modules whereas the humidity levels and duration of IEC 61215-2 damp heat testing may lead to excessive levels of humidity diffused into the modules, potentially resulting in degradation that is unrepresentative of the field.

14 SOLAR ENERGY↗
DOE OSTI2021

Long-Term Thermal Aging Effect Evaluation for Grade 92 and 316L at The LWR Relevant Temperature

Life extension of the existing nuclear reactors imposes accumulated damages, such as higher fluences and longer periods of corrosion, to structural materials, which would result in significant challenges to the traditional reactor materials such as type 304 and 316 stainless steels. Advanced alloys with superior radiation resistance will increase safety margins, design flexibility, and economics for not only the life extension of the existing fleet but also new builds with advanced reactor designs. The Electric Power Research Institute (EPRI) initiated a collaboration with the Department of Energy (DOE) Light Water Reactor Sustainability (LWRS) Program on the Advanced Radiation Resistant Materials (ARRM) program, focused on developing and test degradation resistant alloys for light water reactor (LWR)- relevant environments. Based on a comprehensive microstructure and property screening, the ARRM program selected a total of five alloys (i.e., Grade 92, 310, 690, 718A, and 725), together with 316L and X-750 as references, for further investigations.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
DOE OSTI2023

Integrated Micro‐Scale Concentrating Photovoltaics: A Scalable Path Toward High‐Efficiency, Low‐Cost Solar Power

The global energy market is seeing increases in the electricity demand of a couple of percentage points annually. The photovoltaic (PV) industry is also growing rapidly every year. One of the PV technologies is concentrator photovoltaics (CPV). CPV uses high‐efficiency multijunction solar cells and optics to concentrate sunlight, thereby significantly reducing the amount of semiconductor material needed. Yet, due to the high upfont manufacturing cost of CPV, it currently does not offer a competitive price against silicon PV. With this a new branch is introduced to the industry, micro‐CPV, which can be broadly explained as the miniaturization of the solar cells and optical components. The motivation for micro‐CPV is lowering the cost by decreasing the material volume and enabling new system architectures and high‐throughput manufacturing methods, while still maintaining high electrical efficiencies, taking advantage of a lower thermal load, shorter optical paths, lower resistive losses, and lower material volumes. Herein, a comprehensive review of the technological advances is presented, key synergies between micro‐CPV and other industries sharing similar challenges are identified, exemplified by micro‐light emitting diodes display manufacturing. New assembly process development in these industries will facilitate commercial adoption of micro‐CPV with continued miniaturization while driving down the cost.

Jost, Norman↗
DOE OSTI2022

Scalable membrane-less microbial electrolysis cell with multiple compact electrode assemblies for high performance hydrogen production

Bioelectrochemical hydrogen production via microbial electrolysis cells (MECs) is a promising method for sustainable energy production and decarbonization of energy systems. However, the application of MECs is limited by the electrochemical performance, scalability, and the cost associated with expensive materials. Here, in this study, a scalable MEC (500 mL) with novel compact electrode assemblies and high electrode surface area to volume ratio (160 m 2 /m 3 ) was designed and constructed. The use of membranes, precious metal catalyst, and current collectors with high costs was avoided. A high current density at the steady state of 49.5 ± 5.3 A/m 2 was achieved using acetate as the substrate with phosphate buffer under the applied voltage of 1.01 V. The corresponding volumetric current density was 3948 ± 422 A/m 3 . The compact electrode assembly design limited methane production rate to 3.9 ± 0.2 L/L/D, while achieving a hydrogen production rate of 33.7 ± 1.7 L/L/D. With the suppression of microbial hydrogen consumption, the hydrogen production rate was 39.8 ± 1.9 L/L/D, higher by almost one order of magnitude than those of MECs with scaling up attempts. The compact electrode configuration reduced internal resistance to 88.5 ± 4.4 Ω cm 2 . The energy efficiency based on input electricity was 146 ± 7 % to 189 ± 9 % within the applied voltage range of 0.71 to 1.05 V. The results in this study demonstrated successful scaling up of high performance small MECs and offered a new possible approach of scaling up MECs by stacking high-performance subunits, with no trade-offs on electrochemical performance.

08 HYDROGEN↗
DOE OSTI2023

Loss Analysis and Performance Optimization Pathways of 729-mV Voc Si Solar Cells with Poly-Si on Locally-Etched Dielectric Passivating Contacts

In this article, the loss analysis of silicon solar cells with polysilicon on locally-etched dielectric passivating contacts with Voc=729.0 mV and efficiency=22.6% has been presented. Experimentally, nano-pinholes were introduced in SiO x (2.2 nm) and SiO x /SiN y (2.2 nm/8nm) stack using metal-assisted chemical etching (MACE). SunSolve and Quokka3 were used to simulate the experimental solar cell and investigate the optical and electrical power losses. Simulations suggest maximum power loss occurs due to recombination and resistive losses in the bulk (~0.76 mW/cm2) followed by power loss due to rear contact recombination (~0.35 mW/cm2). Recombination at the front surface also contributes to 0.24 mW/cm2. The effect of improving the bulk lifetime and lowering the recombination current density at the rear side on Voc, FF and hence, efficiency has been investigated. Further, advanced structures have been proposed to minimize recombination and parasitic absorption to achieve higher Voc and Jsc of the solar cells with locally-etched dielectric passivating contacts.

contacts↗