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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 793 records · Page 44
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Modelling of the laser amplification process with allowance for the effect of the temperature distribution in an Yb : YAG gain element on the thermophysical and lasing characteristics of the medium

A time-dependent three-dimensional model for the laser amplification process has been constructed with allowance for the effect of the temperature distribution on the thermophysical and lasing characteristics of gain media. We have performed numerical modelling of the laser amplification process in the gain elements of a two-stage subjoule-level cryogenic laser amplifier operating at a pulse repetition rate of up to 1 kHz. It has been shown that taking into account the temperature distribution is of critical importance in calculation of cryogenically cooled laser amplifiers pumped with high-power diodes. We have found optimal diode pump parameters at which the maximum achievable pulse energy at the amplifier output can reach 300 and 570 mJ at pulse repetition rates of 1000 and 500 Hz, respectively. (extreme light fields and their interaction with matter)

42 ENGINEERING↗
DOE OSTI2022

Characterization of Low Gain Avalanche Detector Prototypes’ Response to Gamma Radiation

Motivated by the need for fast timing detectors to withstand up to 2 MGy of ionizing dose at the High Luminosity Large Hadron Collider, prototype low gain avalanche detectors (LGADs) have been fabricated in a single pad configuration, 2 × 2 arrays, and related p-i-n diodes, and exposed to Co-60 sources for study. Devices were fabricated with a range of dopant layer concentrations, and for the arrays, a variety of inter-pad distances and distances from the active area to the edge. Measurements of capacitance versus voltage and leakage current versus voltage have been made to compare pre- and post-irradiation characteristics in gain layer depletion voltage, full bulk depletion voltage, and breakdown voltage. Conclusions are drawn regarding the effects of the gammas on both surface and interface states and on their contribution to acceptor removal through non-ionizing energy loss from Compton electrons or photoelectrons. Comparison of the performances of members of the set of devices can be used to optimize gain layer parameters.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Modeling dislocation-related leakage currents in GaN p-n diodes

Finite element analysis software was used to model and visualize two p-n junction models: one with a single threading dislocation (TD) and a control model without a dislocation. TDs are modeled as a Gaussian distribution of trap states with an FWHM of 5 nm localized around the r=0 line in a cylindrical coordination such that the linear trap state density was 1 trap/c-translation; this model allows the cylindrical symmetry of the c-plane GaN crystal orientation to be utilized to avoid more computationally intensive 3D models. It was discovered that the interaction of the charged dislocation region with the p-n junction had many notable effects. At zero bias, it was observed that the depletion region width (using the Depletion Approximation) and the maximum electric field were markedly reduced near the dislocation line. More significantly, an asymmetric reduction in the diffusion barrier for electrons (Vbieff=3.03eV) and holes (Vbieff=0.81eV) was observed due to the asymmetric nature of the dislocation band bending related to the doping. The asymmetric reductions in diffusion barriers persisted into VA=2.4V leakage case where asymmetric current profiles for electrons and holes were also observed. Lastly, the diffusion barrier reduction resulted in an additional Shockley-Read-Hall nonradiative recombination leakage caused by a high np-product and trap state density near the intersection of the dislocation with the junction.

Robertson, C. A. (ORCID:0000000300122262)↗
DOE OSTI2023

Diffusion of Brønsted acidic dopants in conjugated polymers

Many semiconductor devices (e.g., light emitting diodes and photovoltaics) utilize heterojunctions of doped and undoped layers or depend on gradients of electronic doping to control charge transport. Understanding of the formation and stability of gradients in doping requires an understanding of diffusion of dopants and the complex changes in polymer properties that arise during doping. Conjugated polymers can be electrically doped by strong acids, but the details of the reaction mechanism and subsequent stability are not understood. Here, we show a clear kinetic isotope effect in the doping of thin films of poly(3-hexylthiophene) (P3HT) by bis(trifluoromethane)sulfonimide (HTFSI) from solution indicating that this doping process is limited by proton transfer to the polymer. Complementary X-ray photoelectron spectroscopy and dynamic secondary ion mass spectrometry (DSIMS) depth profiling of dopant concentrations show definitive evidence of dopant enrichment at the P3HT surface. These surface-limited concentration profiles suggest that diffusivity of dopants vary inversely with dopant concentration due to doping-induced changes to the structure of the conjugated polymer.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Numerical simulation of a relativistic magnetron using a fluid electron model

An approach to numerically modeling relativistic magnetrons, in which the electrons are represented with a relativistic fluid, is described. A principal effect in the operation of a magnetron is space-charge-limited (SCL) emission of electrons from the cathode. We have developed an approximate SCL emission boundary condition for the fluid electron model. This boundary condition prescribes the flux of electrons as a function of the normal component of the electric field on the boundary. Here we show the results of a benchmarking activity that applies the fluid SCL boundary condition to the one-dimensional Child–Langmuir diode problem and a canonical two-dimensional diode problem. Simulation results for a two-dimensional A6 magnetron are then presented. Computed bunching of the electron cloud occurs and coincides with significant microwave power generation. Numerical convergence of the solution is considered. Sharp gradients in the solution quantities at the diocotron resonance, spanning an interval of three to four grid cells in the most well-resolved case, are present and likely affect convergence.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS1988

Vehicle antenna for the mobile satellite experiment

A low profile, low cost, printed circuit, electronically steered, right hand circularly polarized phase array antenna system has been developed for the Mobile Satellite Experiment (MSAT-X) Program. The success of this antenna is based upon the development of a crossed-slot element array and detailed trade-off analyses for both the phased array and pointing system design. The optimized system provides higher gain at low elevation angles (20 degrees above the horizon) and broader frequency coverage (approximately 8 1/2 percent bandwidth) than is possible with a patch array. Detailed analysis showed that optimum performance could be achieved with a 19 element array of a triangular lattice geometry of 3.9 inch element spacing. This configuration has the effect of minimizing grating lobes at large scan angles plus it improves the intersatellite isolation. The array has an aperture 20 inches in diameter and is 0.75 inch thick overall, exclusive of the RF and power connector. The pointing system employs a hybrid approach that operates with both an external rate sensor and an internal error signal as a means of fine tuning the beam acquisition and track. Steering the beam is done electronically via 18, 3-bit diode phase shifters. A nineteenth phase shifter is not required as the center element serves as a reference only. Measured patterns and gain show that the array meets the stipulated performance specifications everywhere except at some low elevation angles.

Peng, Sheng Y.↗
NASA NTRS2008

LED Device Illuminates New Path to Healing

Among NASA s research goals is increased understanding of factors affecting plant growth, including the effects of microgravity. Impeding such studies, traditional light sources used to grow plants on Earth are difficult to adapt to space flight, as they require considerable amounts of power and produce relatively large amounts of heat. As such, an optimized experimental system requires much less energy and reduces temperature variance without negatively affecting plant growth results. Ronald W. Ignatius, founder and chairman of the board at Quantum Devices Inc. (QDI), of Barneveld, Wisconsin, proposed using light-emitting diodes (LEDs) as the photon source for plant growth experiments in space. This proposition was made at a meeting held by the Wisconsin Center for Space Automation and Robotics, a NASA-sponsored research center that facilitates the commercialization of robotics, automation, and other advanced technologies. The Wisconsin group teamed with QDI to determine whether an LED system could provide the necessary wavelengths and intensities for photosynthesis, and the resultant system proved successful. The center then produced the Astroculture3, a plant growth chamber that successfully incorporated this LED light source, which has now flown on several space shuttle missions. NASA subsequently identified another need that could be addressed with the use of LEDs: astronaut health. A central concern in astronaut health is maintaining healthy growth of cells, including preventing bone and muscle loss and boosting the body s ability to heal wounds all adversely affected by prolonged weightlessness. Thus, having determined that LEDs can be used to grow plants in space, NASA decided to investigate whether LEDs might be used for photobiomodulation therapy (PBMT).

Source record↗
NASA NTRS2007

Toward a III-V Multijunction Space Cell Technology on Si

High efficiency compound semiconductor solar cells grown on Si substrates are of growing interest in the photovoltaics community for both terrestrial and space applications. As a potential substrate for III-V compound photovoltaics, Si has many advantages over traditional Ge and GaAs substrates that include higher thermal conductivity, lower weight, lower material costs, and the potential to leverage the extensive manufacturing base of the Si industry. Such a technology that would retain high solar conversion efficiency at reduced weight and cost would result in space solar cells that simultaneously possess high specific power (W/kg) and high power density (W/m2). For terrestrial solar cells this would result in high efficiency III-V concentrators with improved thermal conductivity, reduced cost, and via the use of SiGe graded interlayers as active component layers the possibility of integrating low bandgap sub-cells that could provide for extremely high conversion efficiency.1 In addition to photovoltaics, there has been an historical interest in III-V/Si integration to provide optical interconnects in Si electronics, which has become of even greater relevance recently due to impending bottlenecks in CMOS based circuitry. As a result, numerous strategies to integrate GaAs with Si have been explored with the primary issue being the approx.4% lattice mismatch between GaAs and Si. Among these efforts, relaxed, compositionally-graded SiGe buffer layers where the substrate lattice constant is effectively tuned from Si to that of Ge so that a close lattice match to subsequent GaAs overlayers have shown great promise. With this approach, threading dislocation densities (TDDs) of approx.1 x 10(exp 6)/sq cm have been uniformly achieved in relaxed Ge layers on Si,5 leading to GaAs on Si with minority carrier lifetimes greater than 10 ns,6 GaAs single junction solar cells on Si with efficiencies greater than 18%,7 InGaAs CW laser diodes on Si,8 and room temperature GaInP red laser diodes on Si.9 Here we report on the first high performance dual junction GaInP/GaAs solar cells grown on Si using this promising SiGe engineered substrate approach.

Ringel, S. A.↗
DOE OSTI2021

Water-Dispersible CsPbBr 3 Perovskite Nanocrystals with Ultra-Stability and its Application in Electrochemical CO 2 Reduction

Thanks to the excellent optoelectronic properties, lead halide perovskites (LHPs) have been widely employed in high-performance optoelectronic devices such as solar cells and light-emitting diodes. However, overcoming their poor stability against water has been one of the biggest challenges for most applications. Herein, we report a novel hot-injection method in a Pb-poor environment combined with a well-designed purification process to synthesize water-dispersible CsPbBr 3 nanocrystals (NCs). The as-prepared NCs sustain their superior photoluminescence (91% quantum yield in water) for more than 200 days in an aqueous environment, which is attributed to a passivation effect induced by excess CsBr salts. Thanks to the ultra-stability of these LHP NCs, for the first time, we report a new application of LHP NCs, in which they are applied to electrocatalysis of CO 2 reduction reaction. Noticeably, they show significant electrocatalytic activity (faradaic yield: 32% for CH 4 , 40% for CO) and operation stability (> 350 h).

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1993

Plans to improve the experimental limit in the comparison of the east-west and west-east one-way light propagation times on the rotating earth

The preceding paper describes the results so far (interrupted in the Spring of 1989 because of lack of funds) of an experiment comparing the one-way light propagation times on the surface of the rotating Earth. For the 20 Km path length component in the East-West direction the predicted difference between the opposite sense propagation times would be 160 ps, if the approximately 360 Km/s surface speed of the Earth gives effective light speeds of 3 x 10(exp 8) m/s +/- 360 m/s. This could lead to a prediction of the difference between the clock transport and the light pulse synchronization methods described in the preceding paper: delta(T) = 0.5 (160) = 80 ps. The current upper bound of approximately 100 ps for delta(T) is limited by poorly understood systematic errors. The most important seems to be intensity-dependent time delays in the remote light pulse avalanche photo-diode detector. This will be replaced by a continuously operating circular scan streak camera having single photon sensitivity and a time resolution of approximately 5 ps. (This camera has recently been developed by the Xian Institute of Optics and Precision Mechanics in the P.R.C.). Better isolation from shocks and vibration for the Sigma-Tau hydrogen maser during transport will be provided. It is hoped that delta(T) is less than 20 ps can be achieved.

Alley, C. O.↗
NASA NTRS1995

Laser Opto-Electronic Correlator for Robotic Vision Automated Pattern Recognition

A compact laser opto-electronic correlator for pattern recognition has been designed, fabricated, and tested. Specifically it is a translation sensitivity adjustable compact optical correlator (TSACOC) utilizing convergent laser beams for the holographic filter. Its properties and performance, including the location of the correlation peak and the effects of lateral and longitudinal displacements for both filters and input images, are systematically analyzed based on the nonparaxial approximation for the reference beam. The theoretical analyses have been verified in experiments. In applying the TSACOC to important practical problems including fingerprint identification, we have found that the tolerance of the system to the input lateral displacement can be conveniently increased by changing a geometric factor of the system. The system can be compactly packaged using the miniature laser diode sources and can be used in space by the National Aeronautics and Space Administration (NASA) and ground commercial applications which include robotic vision, and industrial inspection of automated quality control operations. The personnel of Standard International will work closely with the Jet Propulsion Laboratory (JPL) to transfer the technology to the commercial market. Prototype systems will be fabricated to test the market and perfect the product. Large production will follow after successful results are achieved.

Laser Opto-Electronic↗
DOE OSTI2024

Optical analysis of III-nitride micro-light-emitting diodes with different sidewall treatments at low current density operation

Here, in this work, the optical efficiency of III-nitride blue micro-LEDs (μLEDs) ranged from 5 × 5 to 60 × 60 μm 2 with different sidewall treatments at low current density range was investigated. The results showed dielectric sidewall passivation using atomic layer deposition (ALD) has superior optical enhancement compared to conventional RF sputtering, where most of the enhancement occurred at low current density range. Additionally, the use of ALD sidewall passivation and chemical treatment offered significant efficiency improvement for different sizes of μLEDs at operating less than 1 A cm −2 and the devices without sidewall treatments did not emit light. The effect of sidewall treatments to the effective Shockley–Read–Hall (SRH) nonradiative recombination coefficient, or the effective A coefficient from the ABC model, was estimated. The effective SRH nonradiative recombination coefficient was suppressed by two orders of magnitude for devices with sidewall treatments compared to devices without sidewall passivation.

Wong, Matthew S.↗
DOE OSTI2022

A discussion on various experimental methods of impact ionization coefficient measurement in GaN

Impact ionization coefficients play a critical role in semiconductors. In addition to silicon, silicon carbide and gallium nitride are important semiconductors that are being seen more as mainstream semiconductor technologies. As a reflection of the maturity of these semiconductors, predictive modeling has become essential to device and circuit designers, and impact ionization coefficients play a key role here. Recently, several studies have measured impact ionization coefficients. We dedicated the first part of our study to comparing three experimental methods to estimate impact ionization coefficients in GaN, which are all based on photomultiplication but feature characteristic differences. The first method inserts an InGaN hole-injection layer, the accuracy of which is challenged by the dominance of ionization in InGaN, leading to possible overestimation of the coefficients. The second method utilizes the Franz–Keldysh effect for hole injection but not for electrons, where the mixed injection of induced carriers would require a margin of error. The third method uses complementary p–n and n–p structures that have been at the basis of this estimation in Si and SiC and leans on the assumption of a constant electric field, and any deviation would require a margin of error. In the second part of our study, we evaluated the models using recent experimental data from diodes demonstrating avalanche breakdown.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1975

Deposition rate and substrate temperature effects on the structure and properties of bulk-sputtered OFHC Cu and Cu-0.15Zr

Bulk-sputtered OFHC Cu and Cu-0.15 Zr used as inner walls of advanced regeneratively cooled thrust chambers are evaluated as to microstructure, surface topography, and fractography. It is found that under conditions of low substrate temperature, crystallite size and openness of the structure increase with increasing deposition rate for both materials. At elevated temperatures, an equiaxed ductile structure of OFHC Cu is produced only at low deposition rates; at higher deposition rate, open structures are observed with recrystallized equiaxed grains within large poorly bonded crystallites. The Cu-0.15 Zr alloy sputtered from the hollow cathode using a diode discharge shows open-type structures for all conditions evaluated. The use of a triode discharge in generating a dense non-voided structure of Cu-0.15 Zr is discussed.

Hecht, R. J.↗
DOE OSTI2020

From physics to fixtures to food: current and potential LED efficacy

Light-emitting diodes (LEDs) have enabled a historic increase in the conversion of electric energy to photons, but this is approaching a physical limit. The theoretical maximum efficiency occurs when all input energy is converted to energy in photosynthetic photons. Blue LEDs can be 93% efficient, phosphor-converted “whites” 76% efficient, and red LEDs 81% efficient. These improvements open new opportunities for horticultural lighting. Here we review (1) fundamental physics and efficiency of LEDs, (2) the current efficacy of LEDs, (3) the effect of spectral quality on crop yield, and (4) the potential efficacy of horticultural fixtures. Advances in the conversion of photons to yield can be achieved by optimization of spectral effects on plant morphology, which vary among species. Conversely, spectral effects on photosynthesis are remarkably similar across species, but the conventional definition of photosynthetic photons (400–700 nm) may need to be modified. The upper limit of LED fixture efficacy is determined by the LED package efficacy multiplied by four factors inherent to all fixtures: current droop, thermal droop, driver (power supply) inefficiencies, and optical losses. With current LED technology, the calculations indicate efficacy limits of 3.4 µmol J- 1 for white + red fixtures, and 4.1 µmol J -1 for blue + red fixtures. Adding optical protection from water and high humidity reduces these values by ~10%. We describe tradeoffs between peak efficacy and cost.

Agriculture↗
NASA NTRS1982

Imaging antenna arrays

Many millimeter and far-infrared imaging systems are limited in sensitivity and speed because they depend on a single scanned element. Because of recent advances in planar detectors such as Schottky diodes, superconducting tunnel junctions, and microbolometers, an attractive approach to this problem is a planar antenna array with integrated detectors. A planar line antenna array and optical system for imaging has been developed. The significant advances are a 'reverse-microscope' optical configuration and a modified bow-tie antenna design. In the 'reverse-microscope' configuration, a lens is attached to the bottom of the substrate containing the antennas. Imaging is done through the substrate. This configuration eliminates the troublesome effects of substrate surface waves. The substrate lens has only a single refracting surface, making possible a virtually aplanatic system, with little spherical aberration or coma. The array is characterized by an optical transfer function that is easily measured. An array with 19 dB crosstalk levels between adjacent antennas has been tested and it was found that the array captured 50 percent of the available power. This imaging system was diffraction limited.

Rutledge, D. B.↗
NASA NTRS1983

FET commutated current-FED inverter

A shunt switch comprised of a field-effect transistor (Q.sub.1) is employed to commutate a current-fed inverter (10) using thyristors (SCR1, SCR2) or bijunction transistors (Q.sub.2, Q.sub.3) in a full bridge (1, 2, 3, 4) or half bridge (5, 6) and transformer (T.sub.1) configuration. In the case of thyristors, a tapped inverter (12) is employed to couple the inverter to a dc source to back bias the thyristors during commutation. Alternatively, a commutation power supply (20) may be employed for that purpse. Diodes (D.sub.1, D.sub.2) in series with some voltage dropping element (resistor R.sub.12 or resistors R.sub.1, R.sub.2 or Zener diodes D.sub.4, D.sub.5) are connected in parallel with the thyristors in the half bridge and transformer configuration to assure sharing the back bias voltage. A clamp circuit comprised of a winding (18) negatively coupled to the inductor and a diode (D.sub.3) return stored energy from the inductor to the power supply for efficient operation with buck or boost mode.

Rippel, Wally E.↗
NASA NTRS2017

Packaging Technology for Dielectric-Coating-Less Heavy Ion Radiation Testing of High-Voltage (HV) Electronic Parts

Testing high voltage (HV) electronic parts (greater than 300 V) for sudden event effects (SEE) caused by cosmic rays in the space environment, consisting of energetic heavy-ions, and neutron radiation in the upper atmosphere is a crucial step towards using these parts in spacecraft and aircraft. Due to the nature of cosmic radiation and neutrons, electronic parts are tested for SEE without any packaging and/or shielding over the top of the device. In the case of commercial HV parts, the top of the packaging is etched off and then a thin dielectric coating is placed over the part in order to avoid electrical arcing between the device surface and wire bonds and other components. Even though the effects of the thin dielectric layer on SEE testing can be accounted for, the dielectric layer significantly hinders post testing failure analysis. Replicating the test capability of state-of-the-art packaging while eliminating the need for post radiation test processing of the die surface (that obscures failure analysis) is the goal. To that end, a new packaging concept for HV parts has been developed that requires no dielectric coating over the part. Testing of prototype packages used with Schottky diodes (rated at 1200V) has shown no electrical arcing during testing and leakage currents during reverse bias testing are within the manufactures specifications.

High Voltage↗