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At least 793 records · Page 44
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Methods, systems, and devices relating to surgical end effectors

The embodiments disclosed herein relate to various medical device components, including components that can be incorporated into robotic and/or in vivo medical devices, and more specifically including end effectors that can be incorporated into such devices. Certain end effector embodiments include various vessel cautery devices that have rotational movement as well as cautery and cutting functions while maintaining a relatively compact structure. Other end effector embodiments include various end effector devices that have more than one end effector.

42 ENGINEERING↗
DOE OSTI2024

Tailoring coherent charge transport in graphene by deterministic defect generation

Harnessing the wave-nature of charge carriers in solid state devices, electron optics investigates and exploits coherent phenomena, in analogy with optics and photonics. Typically, this requires complex electronic devices leveraging macroscopically coherent charge transport in two-dimensional electron gases and superconductors. Here, collective coherent effects are induced in a simple counterintuitive architecture by defect engineering. Deterministically introduced lattice defects in graphene enable the phase coherent charge transport by playing the role of potential barriers, instead of scattering centres as conventionally considered. Thus, graphene preserves its quasi-ballistic quantum transport and can support phase-matched charge carrier waves. Based on this approach, multiple electronic Fabry-Pèrot cavities are formed by creating periodically alternating defective and pristine nano-stripes through low energy electron-beam irradiation. Indeed, defective stripes behave as partially reflecting mirrors and resonantly confine the charge carrier waves within the pristine areas, giving rise to Fabry-Pèrot resonant modes. These modes experimentally manifest as sheet resistance oscillations, as also confirmed by Landauer-Büttiker simulations. Moreover, these coherent phenomena survive up to 30 K for both polarities of charge carriers, contrarily to traditional monopolar electrostatically created Fabry-Pèrot interferometers. Our study positions defective graphene as an innovative platform for coherent electronic devices, with potential applications in nano and quantum technologies.

Melchioni, Nicola↗
DOE OSTI2025

Modulating Oxide‐Based Quantum Materials by Ion Implantation

Ion implantation has emerged as a powerful tool for manipulating and investigating oxide quantum materials, where strong electron correlations give rise to exotic phases and functionalities. This Review examines how controlled ion bombardment enables targeted modulation of structural, electronic, and magnetic properties in complex oxides. Recent advances in ion beam techniques is analyzed that provide unprecedented control over defect profiles, from point defects to extended damage cascades. In application, ion irradiation has demonstrated the ability to tune quantum phenomena including metal‐insulator transitions, magnetism, and superconductivity through selective doping, defect creation, and lattice strain. The ability to write quantum states with nanoscale precision using focused ion beams is opening new paths for quantum device fabrication. Challenges in understanding radiation damage mechanisms in strongly correlated systems is discussed, and identify opportunities for designing quantum functionality through defect‐engineering approaches. The technique's demonstrated capability to write quantum states with nanoscale precision, combined with its compatibility with existing semiconductor processing infrastructure, suggests a clear pathway for translating fundamental discoveries in quantum materials into practical technological applications.

defect engineering↗
DOE OSTI2022

High Velocity, Low‐Voltage Collective In‐Plane Switching in (100) BaTiO 3 Thin Films

Abstract Ferroelectrics are being increasingly called upon for electronic devices in extreme environments. Device performance and energy efficiency is highly correlated to clock frequency, operational voltage, and resistive loss. To increase performance it is common to engineer ferroelectric domain structure with highly‐correlated electrical and elastic coupling that elicit fast and efficient collective switching. Designing domain structures with advantageous properties is difficult because the mechanisms involved in collective switching are poorly understood and difficult to investigate. Collective switching is a hierarchical process where the nano‐ and mesoscale responses control the macroscopic properties. Using chemical solution synthesis, epitaxially nearly‐relaxed (100) BaTiO 3 films are synthesized. Thermal strain induces a strongly‐correlated domain structure with alternating domains of polarization along the [010] and [001] in‐plane axes and 90° domain walls along the [011] or [01] directions. Simultaneous capacitance–voltage measurements and band‐excitation piezoresponse force microscopy revealed strong collective switching behavior. Using a deep convolutional autoencoder, hierarchical switching is automatically tracked and the switching pathway is identified. The collective switching velocities are calculated to be ≈500 cm s −1 at 5 V (7 kV cm −1 ), orders‐of‐magnitude faster than expected. These combinations of properties are promising for high‐speed tunable dielectrics and low‐voltage ferroelectric memories and logic.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Layer-Dependent Magnetism and Spin Fluctuations in Atomically Thin van der Waals Magnet CrPS 4

van der Waals (vdW) magnets, an emerging family of two-dimensional (2D) materials, have received tremendous attention due to their rich fundamental physics and significant potential for cutting-edge technological applications. In contrast to the conventional bulk counterparts, vdW magnets exhibit significant tunability of local material properties, such as stacking engineered interlayer coupling and layer-number dependent magnetic and electronic interactions, which promise to deliver previously unavailable merits to develop multifunctional microelectronic devices. As a further ingredient of this emerging topic, here we report nanoscale quantum sensing and imaging of atomically thin vdW magnet chromium thiophosphate CrPS 4 , revealing its characteristic layer-dependent 2D static magnetism and dynamic spin fluctuations. We also show a large tunneling magnetoresistance in CrPS 4 -based spin filter vdW heterostructures. Here, the excellent material stability, robust strategy against environmental degradation, in combination with tailored magnetic properties highlight the potential of CrPS 4 in developing state-of-the-art 2D spintronic devices for next-generation information technologies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Knowledge gaps for neuromorphic ionic computing

BACKGROUND Neuromorphic computing, inspired by the human brain’s ability to process information efficiently, represents a transformative approach to computation. In this Review, we explore the emerging field of neuromorphic ionic computing, which leverages ionic conduction and coupling to mimic neural processes, and identify critical knowledge gaps that must be addressed to realize its full potential. A central theme of the discussion is energy efficiency, a challenge that is both a limitation and an opportunity for this technology. Although complementary metal-oxide semiconductor (CMOS)–based neuromorphic technologies have made strides in scaling to billions of neurons and are increasingly applied in artificial intelligence and numerical computing, they remain orders of magnitude behind the human brain in terms of connectivity and energy efficiency. Neuromorphic ionic computing promises to overcome these limitations by leveraging the distinct architectural and operational principles of the brain. Our brains achieve this energy efficiency by combining several key features: using the same network elements to store and process information; using an incredibly complex and massively interconnected three-dimensional (3D) network of locally active elements that enables sparsity, robustness in the presence of noise, adaptation, and life-long learning; computing at comparatively low voltage and frequency; and last, taking advantage of a plethora of ions and small molecules as information carriers. Here, we propose that ionic computing systems can take advantage of similar features to achieve substantial gains in energy efficiency. ADVANCES Since the first reports of neuromorphic ionic behavior in nanofluidic channels, we have witnessed an explosion of reports that used ionic devices to produce synaptomimetic behaviors. However, achieving the goals of ionic computing requires not only implementation of much more sophisticated device functionality but also overcoming fundamental barriers in materials science, device architecture, and system integration. Current ionic devices, even those incorporating state-of-the-art materials, still suffer from limited functionality and stability, which restrict their performance and increase energy demands. Developing new materials with enhanced ionic properties is essential to overcome these limitations. Similarly, the design of neuromorphic devices must evolve to leverage the particular advantages of ionic processes. Existing architectures often follow a single-information-carrier logic of conventional electronics or are constructed of mesoscale fluidics, failing to capitalize on the energy-efficient mechanisms inherent to ionic systems or implement the multiple-information-carrier paradigm. Current neuromorphic chips focus on large-scale networks of analog memory elements based on mechanisms such as charge trap (flash), filamentary, phase change, or spin, which are built on top of a network of artificial CMOS neurons. Although such prototype networks have achieved impressive performance, it is difficult to envision how they can implement the key features such as massive connectivity, sophisticated plasticity, adaptability, sparsity, and “multichromatic” computing. Although small-scale devices have demonstrated promising results, integrating them, maintaining energy efficiency, and implementing temperature control as systems grow in complexity and size to computationally relevant scale remain major hurdles. Furthermore, interfacing neuromorphic ionic devices with existing computing technologies presents technical and conceptual challenges that will require innovative approaches that combine insights from neuroscience, materials science, and engineering. OUTLOOK Despite these challenges, the potential impact of neuromorphic ionic computing is profound with potential applications ranging from artificial intelligence to robotics and beyond. We also argue that neuromorphic ionic computing systems should not, at least in the beginning, compete with CMOS technologies but rather should focus on applications that require extreme energy efficiency with chemical and/or biological compatibility, such as biomedical applications (for example, brain-computer interfaces), environmental monitoring, and agricultural and food applications. Ultimately, this Review highlights the crucial role of interdisciplinary collaboration in advancing the field. Neuromorphic ionic computing is not merely a technological innovation; it represents a substantial step toward sustainable computation, aligning with the growing demand for energy-conscious solutions in a world that is increasingly reliant on data and computation.

Neuromorphic↗
DOE OSTI2020

Technology Development and Field Monitoring in nZEB - US Country report IEA HPT Annex 49 Task 3

The International Energy Agency (IEA) Heat Pumping Technologies (HPT) Annex 49, “Design and Integration of Heat Pumps for Nearly Zero Energy Buildings,” deals with the application of heat pumps (HPs) as a core component of the HVAC system for nearly or net-zero energy buildings. This report covers the Task 3 activities of the US team. Three institutions are involved on the US team and have worked on the following projects. 1) Oak Ridge National Laboratory (ORNL) summarized development activities since the conclusion of IEA HPT Annex 40 for several integrated HP (IHP) systems - electric ground-source IHP and air-source IHP versions and engine-driven AS-IHP version. 2) The University of Maryland partnered with ORNL and Blue Bear Management to develop a personal cooling device called RoCo that can provide personalized conditioned air to occupants in inadequately or unconditioned environments. With RoCo, building facility management can elevate the HVAC thermostat settings without compromising occupants’ thermal comfort. Researchers have found that a 4°F increase in thermostat settings can save 12–30% energy savings. Therefore, RoCo is a promising technology that can help reduce building energy consumption and facilitate achievement of net-zero energy building performance. 3) The National Institute of Standards and Technology (NIST) is working on a field study effort on the NIST Net-Zero Energy Residential Test Facility. Two air-source split-system HPs were installed in a residential, net-zero energy home that was constructed as a laboratory on the NIST campus in Gaithersburg, Maryland. The first HP was a two-stage, 7 kW (2 ton), 15.8 seasonal energy efficiency ratio (SEER), 9.05 heating seasonal performance factor (HSPF) conventionally ducted system; the second HP was a variable-speed, 10.6 kW (3 ton), 14 SEER, 8.35 HSPF, high-velocity ducted system. These two systems operated side by side, using separate supply ducts and a common return duct, on a weekly alternating schedule to condition the home that was operated with very consistent simulated thermal loads. The team wanted to determine whether the high-velocity system could provide comparable energy-use efficiency to the conventional system. The results of this study showed that it did meet the required loads and had slightly greater efficiency; the average cooling coefficient of performance (COP) was (0.40 ± 0.11) higher, and the average heating COP was statistically equal. A new firmware was provided at the end of the heating season that greatly improved the performance of the high-velocity system; its average heating COP went from (1.8 ± 0.9) to (2.5 ± 1.1) at a 95% confidence level. The new firmware heating COP averaged (1.05 ± 0.23) higher than the old firmware over the same outdoor temperatures. The defrost performance is very different for these two systems, yet they consumed equivalent energy per HDD. The conventional system uses a timed-initiate, temperature-terminate algorithm with auxiliary electric resistive heating, whereas the high-velocity system uses calculated evaporator parameters with a hot-gas bypass before a full reverse-cycle defrost with no supplementary resistive heat.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2020

Improved Performance of Cu(InGa)(SeS) 2 PV Modules Using the Reaction of Metal Precursors. Final Report

This project “Improved Performance of Cu(InGa)(SeS) 2 PV Modules using the Reaction of Metal Precursors” was a partnership led by the Institute of Energy Conversion (IEC) at the University of Delaware with Columbia University and the Molecular Foundry at the Lawrence Berkeley National Laboratory. The aim was to develop pathways to improve Cu(InGa)(SeS) 2 (CIGSS) thin film photovoltaic modules using processes compatible with low manufacturing cost. The CIGSS approach investigated was a two-step process including deposition of metal precursor films following by reaction in hydride gases utilizing IEC’s novel reactor. The process was similar to that under commercial development by the project’s industry partner Stion. When Stion went out of business mid-project the focus changed to a rapid thermal process considered more commercially viable. Approaches to improve the performance of solar cells using the reacted films focused on two material innovations. First, the overall Ga content was increased to increase the operating voltage, which is desirable for scale-up to commercial modules. Second, the processing and performance advantages arising from Ag alloying were investigated. Advanced characterization guided process and material development including control of relative composition gradients. Research on the formation of Cu-Ga-In metal precursors utilized sputtering deposition which is normally used in commercial applications. The work resulted in processes for deposition of precursor stacks with increased relative Ga content and effects of deposition parameters on morphology and phase composition were established. It was shown that the metal precursor films have comparable phase composition and morphology so subsequent reaction follows from the same starting point. The addition of Ag to the metal precursors gave more uniform morphology and improved adhesion of reacted films which enable higher reaction temperature for faster processing. A novel outcome was the discovery of a previously undocumented material phase in sputter-deposited and evaporated Ag-Cu-In-Ga thin films. Hydride gas reaction processes including time-temperature-concentration profiles were developed for different precursor compositions. This enables control of composition profiles to engineer through-film gradients for solar cell optimization with characterization and simulations used to correlate measured film composition profiles to measurements of devices. In particular, the gradient of sulfur at the front of the CIGSS film was found to be critical. The simulations guided process development leading to improved reproducibility of devices improved performance with higher Ga content and higher voltage. With Ag-alloyed precursors, the reaction pathways leading were determined. A significant finding was that Ag-alloying increases the reaction rate to completely convert precursor films to the final chalcopyrite which could enable reduced reaction time to benefit manufacturability. To maintain potential commercial viability, the process under investigation was refocused to a rapid thermal process that could potentially be incorporated into an in-line process for manufacturing. Precursors with different composition were capped with an extra selenium layer and reacted in hydrogen sulfide 5-15 minutes, compared to typically 2 hours in the previous multi-step batch process. Critical RTP parameters were identified to control the reaction. Further optimization would be needed for high efficiency solar cells but pathways to high quality devices with further optimization and improved heating uniformity were developed. The project also developed new optoelectronic characterization approaches with a focus on development and application of spatial- and time-resolved photoluminescence and a custom mapping photoluminescence microscope built. It was shown how critical electronic transport properties strongly depend on the chemical composition of the material and that a wide range of samples show inhomogeneity on a length scale larger than the grains in the films. Additionally, two-photon excitation capability was developed to distinguish bulk vs surface losses. The project advances the state-of-the -art for precursor reaction processes in several ways that could impact manufacturing. This includes validation of approaches to increase voltage and establishment of model-guided control to form optimal composition profiles. The application of process control approaches with knowledge of phase formation and reaction pathways can be critically valuable in designing a large-scale process.

14 SOLAR ENERGY↗
DOE OSTI2023

Magnetoelectronic phenomena due to quantum magnetization fluctuations

The goal of the project was to identify techniques to study magnetoelectronic phenomena such as spin transfer (ST) that stem from the quantum-mechanical nature of magnetization, and utilize them to characterize these quantum phenomena. The first such technique, electronic measurements based on the dependence of resistance on the population of spin-wave quanta (magnons) in a magnetic nanostructure, was shown by detailed measurements to be significantly influenced by the current-driven generation of a highly nonequilibrium phonon distribution by electrical current. This previously unrecognized phenomenon adds to the understanding of current-induced heating phenomena, qualitatively changes the methodology of analysis of current-induced heating common in scientific studies and engineering of current-carrying nanostructures. It benefits the public by providing a new direction for mitigation of Joule heating effects in electronic devices. The project also included quantum simulations of current-induced effects in magnetic nanostructures, which revealed that linear momentum and energy conservation are important for ST. Only angular momentum conservation was previously believed to be important. This finding is important for the fundamental understanding of ST, and for the design of efficient magnetoelectronic devices taking advantage of these conservation laws. Simulations also showed that non-classical ST is dominant in antiferromagnets, which will transform the understanding of ST in these systems. Finally, experimental studies of spin-transfer in ultrathin transition metal films revealed very large non-classical effects which were traced to the quantum origins of magnetism associated in the studied systems with the formation of an orbital liquid state. These findings i) transform the understanding of "conventional" transition-metal magnetism, ii) open a new field of studies in magnetism and a new method for the electronic control of magnetic properties and magnetism itself, and iii) provide a new approach to the development of efficient magnetoelectronic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Testing Instrument Extremes in the TREAT Facility

TREAT is a transient power-shaping reactor whose primary mission is to enhance safety performance by testing nuclear fuels and materials under thermodynamic and neutronic conditions ranging from off-normal to extreme. Transient testing of nuclear fuels is analogous to car crash testing, in that the dramatic changes commonly seen when comparing the test specimens' initial and final state points necessitate in-situ measuring in order to interpret and understand the evolution of the experiment. TREAT’s experiment design strategy utilizes a highly reconfigurable and accessible reactor core that affords flexibility when installing experiment devices, thanks to the lack of a primary coolant boundary and the inclusion of multiple access points in the reactor bioshield. Within the experiment devices, the test specimens (which are integrated with their test environments), desired instrumentation diagnostics, and safety considerations are all contained in a single engineered package. The experiments encompass various types of environments (e.g., water, sodium, and gas at temperature and pressure), as well as a range of control options (e.g., static or flowing coolants). The experimental conditions are uniquely representative of advanced reactors, providing challenges to sensor performance but also affording a unique opportunity for development and qualification of sensors suited to these environments.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Engineering Li/Na selectivity in 12-Crown-4–functionalized polymer membranes

Significance Lithium is a key ingredient in batteries, which are integral components of next-generation automobiles, airplanes, grid energy storage, and electronic devices. Unfortunately, lithium extraction from natural sources is laborious, slow, and costly, motivating the search for more efficient isolation techniques. While polymeric membranes could reduce the cost of lithium recovery, current membrane materials lack sufficient lithium-ion selectivity. To address this challenge, we introduce a class of polymeric membranes that incorporate ion binding sites, which significantly increases the transport selectivity of LiCl over NaCl. These studies provide guidelines and practical considerations for incorporating specific interactants into polymers that mediate selective ion transport.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Demonstrating magnetic field robustness and reducing temporal T1 noise in transmon qubits through magnetic field engineering

The coherence of superconducting transmon qubits is often disrupted by fluctuations in the energy relaxation time (T1), limiting their performance for quantum computing. While background magnetic fields can be harmful to superconducting devices, we demonstrate that both trapped magnetic flux and externally applied static magnetic fields can suppress temporal fluctuations in T1 without significantly degrading its average value or qubit frequency. Using a three-axis Helmholtz coil system, we applied calibrated magnetic fields perpendicular to the qubit plane during cooldown and operation. Remarkably, transmon qubits based on tantalum-capped niobium (Nb/Ta) capacitive pads and aluminum-based Josephson junctions (JJs) maintained T1 lifetimes near 300 μs even when cooled in fields as high as 600 mG. Both trapped flux up to 600 mG and applied fields up to 400 mG reduced T1 fluctuations by more than a factor of two, while higher field strengths caused rapid coherence degradation. We attribute this stabilization to the polarization of paramagnetic impurities, the role of trapped flux as a sink for non-equilibrium quasiparticles (QPs), and partial saturation of fluctuating two-level systems (TLSs). These findings challenge the conventional view that magnetic fields are inherently detrimental and introduce a strategy for mitigating noise in superconducting qubits, offering a practical path toward more stable and scalable quantum systems.

Abdisatarov, Bektur [Fermilab; Jefferson Lab]↗
DOE OSTI2026

Roadmap on advanced and / real-time characterisation of solid state materials and devices for energy applications

A strong societal and political drive is motivating the development and optimization of novel energy conversion and storage systems for decarbonization. The successful implementation of solid state devices such as fuel cells and secondary batteries depends, however, on achieving ambitious targets in terms of performance, reliability and cost competitiveness. Research and technology are addressing these needs through a holistic approach including exploration of new materials and nanoarchitectures, as well as system engineering. These significant efforts require the support of appropriate characterization tools capable of assessing nanometer-scale phenomena such as concentration profiles of ionic and electronic charges, local chemical compositions and their evolution over time across interfaces. This roadmap provides an overview of selected advanced characterization techniques for energy materials and devices. Specific focus is put on in situ/operando methods for probing electrochemical phenomena in real-time under realistic working conditions. Experts in the field provide an extensive review of the current state of the art in 2025 and the current and future challenges for the characterization of local chemistry and kinetics in the bulk of the material, in nanoarchitectures (e.g. thin films) and at the interfaces (e.g. grain boundaries, phase contacts, solid/liquid and solid/gas interfaces) . The aim is to provide a detailed guide to the techniques, describing opportunities and bottlenecks for their practical deployment and examples of successful applications.

25 ENERGY STORAGE↗
DOE OSTI2023

Proton radiation effects on electronic defect states in MOCVD-grown (010) β -Ga 2 O 3

The impact of 1.8 MeV proton irradiation on metalorganic chemical vapor deposition grown (010) β-Ga 2 O 3 Schottky diodes is presented. It is found that after a 10.8 × 10 13 cm –2 proton fluence the Schottky barrier height of (1.40 ± 0.05 eV) and the ideality factor of (1.05 ± 0.05 ) are unaffected. Capacitance–voltage extracted net ionized doping curves indicate a carrier removal rate of 268 ± 10 cm –1 . The defect states responsible for the observed carrier removal are studied through a combination of deep level transient and optical spectroscopies (DLTS/DLOS) as well as lighted capacitance–voltage (LCV) measurements. The dominating effect on the defect spectrum is due to the E c -2.0 eV defect state observed in DLOS and LCV. This state accounts for ~75 % of the total trap introduction rate and is the primary source of carrier removal from proton irradiation. Of the DLTS detected states, the E c -0.72 eV state dominated but had a comparably smaller contribution to the trap introduction. These two traps have previously been correlated with acceptor-like gallium vacancy-related defects. Several other trap states at E C -0.36, E C -0.63, and E C -1.09 eV were newly detected after proton irradiation, and two pre-existing states at E C -1.2 and E C -4.4 eV showed a slight increase in concentration after irradiation, together accounting for the remainder of trap introduction. However, a pre-existing trap at E c -0.40 eV was found to be insensitive to proton irradiation and, therefore, is likely of extrinsic origin. Furthermore, the comprehensive defect characterization of 1.8 MeV proton irradiation damage can aid the modeling and design for a range of radiation tolerant devices.

42 ENGINEERING↗
DOE OSTI2022

Engineering Magnetic Anisotropy and Emergent Multidirectional Soft Ferromagnetism in Ultrathin Freestanding LaMnO 3 Films

We report the combination of small coercive fields and weak magnetic anisotropy makes soft ferromagnetic films extremely useful for nanoscale devices that need to easily switch spin directions. However, soft ferromagnets are relatively rare, particularly in ultrathin films with thicknesses of a few nanometers or less. We have synthesized large-area, high-quality, ultrathin freestanding LaMnO 3 films on Si and found unexpected soft ferromagnetism along both the in-plane and out-of-plane directions when the film thickness was reduced to 4 nm. We argue that the vanishing magnetic anisotropy between the two directions is a consequence of two coexisting magnetic easy axes in different atomic layers of the LaMnO 3 film. Spectroscopy measurements reveal a change in Mn valence from 3+ in the film interior to approximately 2+ at the surfaces where considerable hydrogen infiltration occurs due to the water dissolving process. First-principles calculations show that protonation of LaMnO 3 decreases valence and Our the Mn switches the magnetic easy axis from in-plane to out-of-plane as the Mn valence approaches 2+ from its 3+ bulk value. Our work demonstrates that ultrathin freestanding films can exhibit functional properties that are absent in homogeneous materials, concomitant with their convenient compatibility with Si-based devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Engineering local strain for single-atom nuclear acoustic resonance in silicon

Mechanical strain plays a key role in the physics and operation of nanoscale semiconductor systems, including quantum dots and single-dopant devices. In this report we describe the design of a nanoelectronic device, where a single nuclear spin is coherently controlled via nuclear acoustic resonance (NAR) through the local application of dynamical strain. The strain drives spin transitions by modulating the nuclear quadrupole interaction. We adopt an AlN piezoelectric actuator compatible with standard silicon metal–oxide–semiconductor processing and optimize the device layout to maximize the NAR drive. We predict NAR Rabi frequencies of order 200 Hz for a single 123Sb nucleus in a wide region of the device. Spin transitions driven directly by electric fields are suppressed in the center of the device, allowing the observation of pure NAR. Using electric field gradient-elastic tensors calculated by the density-functional theory, we extend our predictions to other high-spin group-V donors in silicon and to the isoelectronic 73Ge atom.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Tailoring SnO 2 , (Mg,Zn)O, and Ga:(Mg,Zn)O electro-optical properties and stability for solar cells

The electron density, mobility, bandgap, and band alignment of transparent conducting oxides (TCOs) can be tailored by adjusting composition and stoichiometry, thereby enabling interface engineering for diverse semiconductor applications. For example, solar cell efficiency can change enormously by adjusting TCO properties. At the same time, these TCO properties can shift during the deposition of other layers, anneals, and device operation. An ideal TCO should have tunable but stable electro-optical properties. Here, we deposit SnO 2 , (Mg,Zn)O (MZO), and Ga:(Mg,Zn)O (GMZO) films on glass and measure electro-optical characteristics before and after reducing, inert, oxidizing, and CdCl2 anneals over a range of temperatures. Electron density generally increases in the progression from oxidizing to inert and reducing ambients. SnO 2 is relatively stable compared to MZO but has less flexibility for interface engineering. We investigate GMZO as a similar but more stable alternative to MZO.The addition of Ga to MZO has significant effects on electron density and improves electro-optical stability, which can be advantageous for semiconductor applications. Furthermore, we demonstrate that GMZO can be readily incorporated into solar cells.

14 SOLAR ENERGY↗