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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 793 records · Page 44
All sourcesNASA NTRSDOE OSTI
NASA NTRS1981

Single photon X-ray imaging with charge-coupled devices /CCDs/

The paper describes a CCD camera facility designed and built for testing and characterization of CCDs in response to single X-ray photons in the 1-10 keV energy range. Results from the frontside-illuminated Fairchild 211 and 221 area imagers are presented; high quantum efficiency over the 3-6 keV range was verified. In order to avoid the problem of charge spreading at the higher energies, deep-depleted CCDs for soft X-ray imaging have been constructed, and good response was obtained at 6 keV. The present results are a first step toward the demonstration of the CCD as an appropriate device for at least the central part of the focal plane of a large X-ray telescope, e.g., the proposed Advanced X-ray Astrophysics Facility.

Griffiths, R. E.↗
DOE OSTI2022

Design Considerations for Developing 1.2 kV 4H-SiC BiDFET-enabled Power Conversion Systems

Bidirectional switches are essential for cycloconverter and matrix converter applications to facilitate single-stage AC-AC conversion without intermediate energy storage elements. The 1.2 kV 4H-SiC BiDFET was developed as the first monolithic bidirectional SiC power transistor. This paper describes the design considerations taken into account while creating the BiDFET device and developing custom packages for housing the switch in discrete form for low power applications and in module form for high-power applications. The realized switches are characterized for their on-state and switching performance. The versatility of the BiDFET device is demonstrated by operating a single BiDFET H-bridge in voltage-source-inverter and current-source-inverter topologies only by varying the gate bias on the individual BiDFETs and reversing the input-output connections.

Bidirectional, Silicon Carbide, Half-Bridge Module↗
NASA NTRS2007

Performance Measurement of a Multi-Level/Analog Ferroelectric Memory Device Design

Increasing the memory density and utilizing the unique characteristics of ferroelectric devices is important in making ferroelectric memory devices more desirable to the consumer. This paper describes the characterization of a design that allows multiple levels to be stored in a ferroelectric based memory cell. It can be used to store multiple bits or analog values in a high speed nonvolatile memory. The design utilizes the hysteresis characteristic of ferroelectric transistors to store an analog value in the memory cell. The design also compensates for the decay of the polarization of the ferroelectric material over time. This is done by utilizing a pair of ferroelectric transistors to store the data. One transistor is used a reference to determinethe amount of decay that has occurred since the pair was programmed. The second transistor stores the analog value as a polarization value between zero and saturated. The design allows digital data to be stored as multiple bits in each memory cell. The number of bits per cell that can be stored will vary with the decay rate of the ferroelectric transistors and the repeatability of polarization between transistors. This paper presents measurements of an actual prototype memory cell. This prototype is not a complete implementation of a device, but instead, a prototype of the storage and retrieval portion of an actual device. The performance of this prototype is presented with the projected performance of the overall device. This memory design will be useful because it allows higher memory density, compensates for the environmental and ferroelectric aging processes, allows analog values to be directly stored in memory, compensates for the thermal and radiation environments associated with space operations, and relies only on existing technologies.

MacLeod, Todd C.↗
DOE OSTI2022

High‐Efficiency Solar Cells Grown on Spalled Germanium for Substrate Reuse without Polishing

Abstract Radical reduction of III–V device costs requires a multifaceted approach attacking both growth and substrate costs. Implementing device removal and substrate reuse provides an opportunity for substrate cost reduction. Controlled spalling allows removal of thin devices from the expensive substrate; however, the fracture‐based process currently generates surfaces with significant morphological changes compared to polished wafers. 49 single junction devices are fabricated across the spalled surface of full 50 mm germanium wafers without chemo‐mechanical polishing before epitaxial growth. Device defects are identified and related to morphological spalling defects—arrest lines, gull wings, and river lines—and their impact on cell performance using physical and functional characterization techniques. River line defects have the most consistent and detrimental effect on cell performance. Devices achieve a single junction efficiency above 23% and open‐circuit voltage of 1.01 V, demonstrating that spalled germanium does not need to be returned to a pristine, polished state to achieve high‐quality device performance.

14 SOLAR ENERGY↗
NASA NTRS2005

Ferroelectric Devices Emit Charged Particles and Radiation

Devices called solid-state ferroelectric- based sources (SSFBSs) are under development as sources of electrons, ions, ultraviolet light, and x-rays for diverse applications in characterization and processing of materials. Whereas heretofore it has been necessary to use a different device to generate each of the aforementioned species of charged particles or radiation, a single SSFBS can be configured and operated to selectively generate any of the species as needed using a single source. Relative to comparable prior sources based, variously, on field emission, thermionic emission, and gaseous discharge plasmas, SSFBSs demand less power, and are compact and lightweight. An SSFBS exploits the unique physical characteristics of a ferroelectric material in the presence of a high-frequency pulsed electric field. The basic building block of an SSFBS is a ferroelectric cathode -- a ferroelectric wafer with a solid electrode covering its rear face and a grid electrode on its front face (see figure). The application of a voltage pulse -- typically having amplitude of several kilovolts and duration of several nanoseconds -- causes dense surface plasma to form near the grid wires on the front surface.

Bar-Cohen, Yoseph↗
DOE OSTI2020

Scalable quantum processor noise characterization

Measurement fidelity matrices (MFMs) (also called error kernels) are a natural way to characterize state preparation and measurement errors in near-term quantum hardware. They can be employed in post processing to mitigate errors and substantially increase the effective accuracy of quantum hardware. However, the feasibility of using MFMs is currently limited as the experimental cost of determining the MFM for a device grows exponentially with the number of qubits. In this work we present a scalable way to construct approximate MFMs for many-qubit devices based on cumulant expansions. Our method can also be used to characterize various types of correlation error.

Hamilton, Kathleen↗
DOE OSTI2022

Third harmonic characterization of antiferromagnetic heterostructures

Abstract Electrical switching of antiferromagnets is an exciting recent development in spintronics, which promises active antiferromagnetic devices with high speed and low energy cost. In this emerging field, there is an active debate about the mechanisms of current-driven switching of antiferromagnets. For heavy-metal/ferromagnet systems, harmonic characterization is a powerful tool to quantify current-induced spin-orbit torques and spin Seebeck effect and elucidate current-induced switching. However, harmonic measurement of spin-orbit torques has never been verified in antiferromagnetic heterostructures. Here, we report harmonic measurements in Pt/ α -Fe 2 O 3 bilayers, which are explained by our modeling of higher-order harmonic voltages. As compared with ferromagnetic heterostructures where all current-induced effects appear in the second harmonic signals, the damping-like torque and thermally-induced magnetoelastic effect contributions in Pt/ α -Fe 2 O 3 emerge in the third harmonic voltage. Our results provide a new path to probe the current-induced magnetization dynamics in antiferromagnets, promoting the application of antiferromagnetic spintronic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Diagnosing and Destroying Non-Markovian Noise

Nearly every protocol used to analyze the performance of quantum information processors is based on an assumption that the errors experienced by the device during logical operations are constant in time and are insensitive to external contexts. This assumption is pervasive, rarely stated, and almost always wrong. Quantum devices that do behave this way are termed "Markovian:' but nearly every system we have ever probed has displayed drift or crosstalk or memory effects they are all non-Markovian. Strong non-Markovianity introduces spurious effects in characterization protocols and violates assumptions of the fault-tolerance threshold theorems. This SAND report details a three year laboratory-directed research and development (LDRD) project entitled, "Diagnosing and Destroying non-Markovian Noise in Quantum Information Processors." This program was initiated to build tools to study non-Markovian dynamics and quantum systems and develop robust methodologies for eliminating it. The program achieved a number of notable successes, including the first statistically rigorous protocol for identifying and characterizing drift in quantum systems, a formalism for modeling memory effects in quantum devices, and the successful suppression of drift in a Sandia trapped-ion quantum processor.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2026

Sapphire Substrate Trenching to Advance Superconducting High-Coherence Quantum Devices

Achieving longer coherence times in superconducting qubits is essential for advancing quantum information processing and enabling scalable quantum computing. This work presents an innovative fabrication strategy focused on sapphire trenching of the substrate of superconducting high-coherence quantum devices, developed by the SQMS Nanofabrication Taskforce in collaboration with the materials characterization team. In this talk, we present a method to efficiently and consistently trench into the sapphire substrate, without compromising the surface roughness or profile of the etched sapphire. In the literature, trenching in the substrate has been shown to decrease losses, unwanted coupling and thermal stress. Sapphire’s strong covalent bonds make it harder to etch compared to silicon, yet it is more favorable for high-coherence quantum devices due to its lower dielectric losses. This innovative technique opens new possibilities for superconducting qubit fabrication: we fabricated high coherence qubit chips on sapphire substrates with trenching, to demonstrate that it will help pushing towards higher coherence times. By integrating this work with ongoing junction process optimization, design innovation, materials characterization and exploration, we outline a clear pathway toward transmon coherence times reaching millisecond scales and beyond.

Garattoni, S. [Fermilab]↗
DOE OSTI2026

Sapphire Substrate Trenching to Advance Superconducting High-Coherence Quantum Devices

Achieving longer coherence times in superconducting qubits is essential for advancing quantum information processing and enabling scalable quantum computing. This work presents an innovative fabrication strategy focused on sapphire trenching of the substrate of superconducting high-coherence quantum devices, developed by the SQMS Nanofabrication Taskforce in collaboration with the materials characterization team. In this talk, we present a method to efficiently and consistently trench into the sapphire substrate, without compromising the surface roughness or profile of the etched sapphire. In the literature, trenching in the substrate has been shown to decrease losses, unwanted coupling and thermal stress. Sapphire’s strong covalent bonds make it harder to etch compared to silicon, yet it is more favorable for high-coherence quantum devices due to its lower dielectric losses. This innovative technique opens new possibilities for superconducting qubit fabrication: we fabricated high coherence qubit chips on sapphire substrates with trenching, to demonstrate that it will help pushing towards higher coherence times. By integrating this work with ongoing junction process optimization, design innovation, materials characterization and exploration, we outline a clear pathway toward transmon coherence times reaching millisecond scales and beyond.

Garattoni, S. [Fermilab]↗
NASA NTRS2013

Temperature and Strain Coefficient of Velocity for Langasite SAW Devices

Surface Acoustic Wave sensors on Langasite substrates are being investigated for aerospace applications. Characterization of the Langasite material properties must be performed before sensors can be installed in research vehicles. The coefficients of velocity for both strain and temperature have been determined. These values have also been used to perform temperature compensation of the strain measurements.

Wilson, W. C.↗
DOE OSTI2022

Predicting Solar Cell Performance from Terahertz and Microwave Spectroscopy

Abstract Mobilities and lifetimes of photogenerated charge carriers are core properties of photovoltaic materials and can both be characterized by contactless terahertz or microwave measurements. Here, the expertise from fifteen laboratories is combined to quantitatively model the current‐voltage characteristics of a solar cell from such measurements. To this end, the impact of measurement conditions, alternate interpretations, and experimental inter‐laboratory variations are discussed using a (Cs,FA,MA)Pb(I,Br) 3 halide perovskite thin‐film as a case study. At 1 sun equivalent excitation, neither transport nor recombination is significantly affected by exciton formation or trapping. Terahertz, microwave, and photoluminescence transients for the neat material yield consistent effective lifetimes implying a resistance‐free JV‐curve with a potential power conversion efficiency of 24.6 %. For grainsizes above ≈20 nm, intra‐grain charge transport is characterized by terahertz sum mobilities of ≈32 cm 2 V −1 s −1 . Drift‐diffusion simulations indicate that these intra‐grain mobilities can slightly reduce the fill factor of perovskite solar cells to 0.82, in accordance with the best‐realized devices in the literature. Beyond perovskites, this work can guide a highly predictive characterization of any emerging semiconductor for photovoltaic or photoelectrochemical energy conversion. A best practice for the interpretation of terahertz and microwave measurements on photovoltaic materials is presented.

14 SOLAR ENERGY↗
DOE OSTI2020

Helpful Engineering's Universal Citizen Protection Device (UCPD)

The Universal Citizen Protection Device (UCPD) is a UV-based, filterless PPE concept developed by Helpful Engineering that aims to keep viral particles out of eyes, nose and mouth with a 99%+ reliability. The heart of the device is a concealed UV chamber that decontaminates all air going in and out of the PPE. The objective of this project was to provide measurements as evidence of proof of function of a representative prototype. Sandia utilized its aerosol characterization facility to measure the amount of virus that is inactivated by the device at representative flow rates and concentrations, using MS2 bacteriophage as the BSL-1 viral surrogate.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2023

Self-Driving Laboratory for Polymer Electronics

Owing to the chemical pluripotency and viscoelastic nature of electronic polymers, polymer electronics have shown unique advances in many emerging applications such as skin-like electronics, large-area printed energy devices, and neuromorphic computing devices, but their development period is years-long. Recent advancements in automation, robotics, and learning algorithms have led to a growing number of self-driving (autonomous) laboratories that have begun to revolutionize the development and accelerated discovery of materials. In this perspective, we first introduce the current state of autonomous laboratories. Then we analyze why it is challenging to conduct polymer electronics research by an autonomous laboratory and highlight the needs. Here, we further discuss our efforts in building an autonomous laboratory, namely Polybot, for the automated synthesis and characterization of electronic polymers and their processing and fabrication into electronic devices. Finally, we share our vision in using a self-driving laboratory for different types of polymer electronics research.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Mechanical Characterization of Electrolyzer Membranes and Components Under Compression

Proton-exchange membrane (PEM) water electrolysis is a promising technology for producing clean hydrogen by electrochemically splitting water when paired with renewable energy sources. A major roadblock to improving electrolyzer durability is the mechanical degradation of the cell components, which requires an understanding of their mechanical response under device-relevant conditions. However, there is a lack of studies on the mechanical characterization of the PEM and other components, as well as and their interactions. This study aims to address this gap by using a custom-designed testing apparatus to investigate the mechanics of electrolyzer components in uniaxial compression at 25 and 80 °C. Findings show stress-strain response of components have a varying degree of nonlinearity owing to their distinct deformation mechanisms and morphologies, from porous structures to polymers. These results are used to develop an expression for compressive stress-strain response of Nafion membranes and then analyze the deformation of components under applied pressure by using a 1-D spring network model of cell assembly. This work provides a new understanding of mechanical responses of the electrolyzer membrane and cell components, which can help assess material design and cell assembly strategies for improved electrolyzer durability.

08 HYDROGEN↗
NASA NTRS2010

Focal Plane Geometry Characterization of the Kepler Mission

The Kepler Mission focal plane contains 42 charge-coupled device (CCD) photodetectors. Each CCD is composed of 2.2 million square pixels, 27 micrometers on a side, arranged in a grid of 2,200 columns by 1,044 rows. The science goals of the Kepler Mission require that the position of each CCD be determined with an accuracy of 0.1 pixels, corresponding to 2.7 micrometers or 0.4 seconds of arc, a level which is not achievable through pre-flight metrology. We describe a technique for determining the CCD positioning using images of the Kepler field of view (FOV) obtained in flight. The technique uses the fitted centroid row and column positions of 400 pre-selected stars on each CCD to obtain empirical polynomials which relate sky coordinates (right ascension and declination) to chip coordinates (row and column). The polynomials are in turn evaluated to produce constraints for a nonlinear model fit which directly determines the model parameters describing the location and orientation of each CCD. The focal plane geometry characterization algorithm is itself embedded in an iterative process which determines the focal plane geometry and the Pixel Response Function for each CCD in a self-consistent manner. In addition to the fully automated calculation, a person-in-the-loop implementation was developed to allow an initial determination of the geometry in the event of large misalignments, achieving a much looser capture tolerance for more modest accuracy and reduced automation.

ccd↗
DOE OSTI2025

Evaluating switch lifetime in soft-switched single-stage differential-mode SST

The reliability of semiconductor switches in single-stage differential-mode solid-state transformers (DM-SSTs) has not been systematically evaluated under soft-switching operation and realistic grid conditions. This paper presents a switch-level reliability analysis for soft-switched and hard-switched DM-SST configurations by integrating converter-specific power loss modeling with empirical lifetime prediction. Analytical derivation of device current profiles specific to the DM-SST is used to characterize electrothermal stress, which is then mapped to lifetime using degradation models obtained from power cycling tests (PCTs). Applied to realistic SST load profiles and grid voltage variations, this approach provides a probabilistic prediction of switch lifetime for the DM-SST. Lifetime estimates for both SiC MOSFETs and Si IGBTs are presented, offering insight into device degradation under converter operating conditions. The results quantify the reliability benefits of soft switching in single-stage SSTs, highlighting how switching dynamics influence long-term switch degradation.

14 SOLAR ENERGY↗
DOE OSTI2019

Additively Manufactured Intensified Device for Enhanced Carbon Capture

Additively manufactured packed bed devices for the enhancement of carbon capture were successfully developed, built, characterized, and tested in this project. The objective was to demonstrate that in situ cooling of chemical absorption could have beneficial effects on the absorption rate of CO 2 . This was achieved in two stages, divided between FY 2018 and FY 2019. First, the feasibility of printing conventional packing elements was investigated, and the core hydrodynamic metrics were experimentally validated. The data obtained in those studies informed the operating conditions set for the next stage, which was to validate the efficacy of in situ cooling provided by an additively manufactured packed bed element, referred to as the intensified device. The intensified device is designed to enable heat exchange between an internally flowing coolant and the gas-liquid system flowing on the external corrugated surface of the packing. Polymer and metal were both considered as the base materials for the device, and comparative studies on hydrodynamic properties were performed. These considerations, as well as thermal properties and leak tests led to aluminum being chosen as the base material for experimental validation of capture enhancement. The experimental validation was first conducted under non-reactive conditions, and after establishing heat-exchange capabilities, was subsequently conducted under reactive conditions. These studies demonstrated that in situ cooling can benefit absorption given the appropriate operating conditions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗