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At least 793 records · Page 44
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

Fabrication of Single Crystal Gallium Phosphide Thin Films on Glass

Due to its high refractive index and low absorption coefficient, gallium phosphide is an ideal material for photonic structures targeted at the visible wavelengths. However, these properties are only realized with high quality epitaxial growth, which limits substrate choice and thus possible photonic applications. In this work, we report the fabrication of single crystal gallium phosphide thin films on transparent glass substrates via transfer bonding. GaP thin films on Si (001) and (112) grown by MOCVD are bonded to glass, and then the growth substrate is removed with a XeF 2 vapor etch. The resulting GaP films have surface roughnesses below 1 nm RMS and exhibit room temperature band edge photoluminescence. Magnesium doping yielded p-type films with a carrier density of 1.6 × 10 17 cm -3 that exhibited mobilities as high as 16 cm 2 V -1 s -1 . Therefore, due to their unique optical properties, these films hold much promise for use in advanced optical devices.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Measurement of minority-carrier diffusion lengths using wedge-shaped semiconductor photoelectrodes

Measurement of the photocurrent as a function of the thickness of a light absorber has been shown herein both theoretically and experimentally to provide a method for determination of the minority-carrier diffusion length of a sample. To perform the measurement, an illuminated spot of photons with an energy well above the band gap of the material was scanned along the thickness gradient of a wedge-shaped, rear-illuminated semiconducting light absorber. Photogenerated majority carriers were collected through a back-side transparent ohmic contact, and a front-side liquid or Schottky junction collected the photogenerated minority carriers. Calculations showed that the diffusion length could be evaluated from the exponential variation in photocurrent as a function of the thickness of the sample. Good agreement was observed between experiment and theory for a solid-state silicon Schottky junction measured using this method. As an example for the application of the technique to semiconductor/liquid-junction photoelectrodes, the minority-carrier diffusion length was determined for graded thickness, sputtered tungsten trioxide and polished bismuth vanadate films under back-illumination in contact with an aqueous electrolyte. Furthermore, this wedge technique does not require knowledge of the spectral absorption coefficient, doping, or surface recombination velocity of the sample.

42 ENGINEERING↗
DOE OSTI2018

A DFT analysis of the ground and charge-transfer excited states of Sc 3 N@I h –C 80 fullerene coupled with metal-free and zinc-phthalocyanine

Endohedral metallofullerenes and phthalocyanine derivatives are recognized as excellent active materials in organic photovoltaics (OPVs). The tri-metallic nitride endohedral C 80 fullerenes have greater absorption coefficients in the visible region and electron-accepting abilities similar to C 60 , which can allow for higher efficiencies in OPV devices. Here, we have investigated the ground and charge transfer excited states of two co-facial donor–acceptor (D–A) molecular conjugates formed by the non-covalent coupling of trimetallic nitride endohedral fullerene (Sc 3 N@I h –C 80 ) with metal-free (H 2 Pc) and zinc-phthalocyanine (ZnPc) chromophores using DFT calculations. The charge transfer (CT) excitation energies are calculated using the perturbative delta-SCF method that enforces orthogonality between the ground and excited states. The binding energies calculated using the PBE and DFT-D3 methods indicate that the dispersion effects play an important role in the stabilization of these complexes. The ground state dipole moment of the Sc 3 N@C 80 –H 2 Pc dyad is much larger than that of Sc 3 N@C 80 –ZnPc, but this is reversed in the excited state where the dipole moment of Sc 3 N@C 80 –ZnPc increases significantly. The lowest few excitation energies in the gas phase for the two complexes are very close, in the range of 1.51–2.66 eV for Sc 3 N@C 80 –ZnPc and 1.51–2.71 eV for the Sc 3 N@C 80 –H 2 Pc complex. However, the lower ionization potential and lower exciton binding energy make the Sc 3 N@C 80 –ZnPc dyad a better candidate for OPVs as compared to the Sc 3 N@C 80 –H 2 Pc dyad.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

Multimodal characterization of solution-processed Cu3SbS4 absorbers for thin film solar cells

The most efficient inorganic thin film chalcogenide-based solar cells use CdTe or CuInGaSe2 (CIGS) as absorber layers, which rely on toxic (Cd) and/or scarce elements (In, Te). The desire for more sustainable solar cells has led to the development of Earth abundant and non-hazardous chalcogenide absorbers. Cu3SbS4 (famatinite) is a promising Earth abundant p-type semiconductor that has a low direct band gap (0.9–1.05 eV), is a superabsorber (absorption coefficient 104–105 cm1), and has potential in low-cost, thin-film solar cells. Although these properties make the Cu3SbS4 phase stand out as a promising material for photovoltaics, to date Cu3SbS4 solar cells have only achieved low efficiencies. In this study, we demonstrate a method for synthesizing Cu3SbS4 nanocrystals and formation of thin-films by coating nanocrystal precursors onto substrates. Optical, structural, and chemical state characterization were performed before and after thermal processing of the Cu3SbS4 films. A detailed experimental analysis of the bulk and surfaces of the Cu3SbS4 absorber films indicate that phase stability and preferential copper oxidation at the surface may limit device performance for Cu3SbS4 based solar cells. These findings may provide significant insight on how to improve Cu3SbS4 based solar cell performance by controlling processing conditions. This research was funded by the United States National Science Foundation – Scalable Nanomanufacturing program (Grant CBET-1449383). A portion of this research was performed at the Northwest Nanotechnology Infrastructure, a member of the National Nanotechnology Coordinated Infrastructure, which is supported by the National Science Foundation (Grant ECCS- 1542101). The acquisition of the OSU Titan TEM was supported by the National Science Foundation via the Major Research Instrumentation (MRI) program under Grant No. 1040588, the Murdock Charitable Trust, and the Oregon Nanoscience and Microtechnologies Institute (ONAMI). XANES spectra were obtained through an approved program user proposal at the Advanced Light Source, which is a DOE Office of Science User Facility under contract no. DE-AC02-05CH11231. The ALS approved program user proposal beam time was obtained through the chemical imaging initiative, an LDRD program at PNNL. We acknowledge Trey Diulus and Dr Igor Lyubinetsky for their assistance with the XPS experiments.

Albuquerque, Gustavo H.↗
DOE OSTI2020

Influence of Hydrogen and Oxygen on the Structure and Properties of Sputtered Magnesium Zirconium Oxynitride Thin Films

Nitride materials with mixed ionic and covalent bonding character and resulting good charge transport properties are attractive for optoelectronic devices. Recently, Mg-based ternary nitride materials were found to have large dielectric constants and high absorption coefficients with bandgaps appropriate for photovoltaic applications. However, their degenerate carrier concentrations still hinder their possible applications in solar cells and related optoelectronic devices. Therefore, further understanding and engineering of the parameters controlling the material properties of these ternary nitrides is highly desirable. In this paper we report that the structural, optical and electrical properties of magnesium zirconium oxynitride (MZNO) thin films synthesized by combinatorial sputtering with a wide range of cation compositions can be affected by incorporation of oxygen and hydrogen. Excess oxygen improved the crystallinity of MZNO thin films whereas hydrogen attracted oxygen and formed Mg-rich oxide layers at the grain boundaries which in turn reduced the conductivity. On the other hand, optical properties are more sensitive to the composition – both cation and anion ratios – rather than the presence of hydrogen. Compared to cation-stoichiometric MZNO (10 19 –10 20 cm -3 ), substantial reduction of carrier concentration down to ~10 14 cm -3 was achieved under Mg-rich conditions by supplying hydrogen during growth. Photoluminescence measurements showed that the films prepared with hydrogen were optoelectronically active. Overall, this study demonstrates that the material properties of MZN thin films can be significantly influenced by incorporation of oxygen and hydrogen.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Bandgap engineering of SrZrS 3 chalcogenide perovskite via substitutional doping for photovoltaic applications: a first-principles DFT study

Strontium zirconium sulfide (SrZrS 3 ) has garnered significant attention for photovoltaic (PV) applications due to its excellent optoelectronic properties, high chemical and moisture stability, and non-toxicity. However, the bandgaps of both the α- and β-phases lie outside the optimum ranges for both single-junction solar cells (SJSCs) and tandem solar cells (TSCs), thereby limiting their applications in PV technologies. In this study, we employed hybrid density functional theory to engineer the band gaps of α- and β-SrZrS 3 through substitutional doping. We considered three dopants (Hf, Sn, and Ti) at the Zr site of SrZrS 3 with varying doping concentrations and investigated their effects on the structural, electronic, and optical properties of the materials. We found that Sn and Ti doping effectively lowers the band gaps of both α- and β-SrZrS 3 , whereas Hf doping increases them. For x values up to 0.25, the band gaps of the α-SrZr 1−x Sn x S 3 and α-SrZr 1−x Ti x S 3 are within the optimum range for SJSCs, and those of β-SrZr 1−x Sn x S 3 and β-SrZr 1−x Ti x S 3 lie within the optimum range for Si/perovskite as well as perovskite/perovskite TSCs. The three dopants exhibited significant effects on the optical properties of both α- and β-SrZrS 3 , including the absorption coefficient, energy-loss functions, reflectivity, and refractivity spectra. Thermodynamic stability analysis revealed that for both phases, SrZr 1−x Hf x S 3 can be synthesized via exothermic processes, whereas the formation of SrZr 1−x Ti x S 3 and SrZr1−xSn x S 3 is endothermic and hence, not thermodynamically favorable. Further analysis showed that SrZr 1−x Ti x S 3 in both α- and β-phases are stable under thermodynamic equilibrium conditions, whereas SrZr 1−x Sn x S 3 is prone to dissociation into ternary phases (SrZrS 3 and SrSnS 3 ), especially at higher doping concentrations. These results show that Ti doping is effective in tuning the band gaps of α- and β-SrZrS 3 toward the optimal values for PV applications.

14 SOLAR ENERGY↗
DOE OSTI2026

Recent efforts of vapour-phase strategies for EUV resist toward high- and hyper-NA extreme ultraviolet lithography

Extreme ultraviolet lithography (EUVL, λ = 13.5 nm) is critical for sub-1 nm technology nodes but remains constrained by inherent trade-offs among resolution, line-edge roughness (LER), and sensitivity. Stochastic effects originating from photon shot noise, low-energy secondary electron blur, and the random distribution of resist components further limit its advancement toward high numerical-aperture (NA, NA = 0.55) and hyper-NA (NA ≥0.75) EUVL. While the optimization of spin-on chemically amplified resists (CARs) continues, metal-oxide resists (MORs) have emerged as strong candidates for next-generation EUVL by incorporating metals with high EUV absorption coefficients, which enhances both resist sensitivity and etch resistance during pattern transfer. Besides spin-coating, recent advances in vapour-phase techniques, such as vapour-phase infiltration (VPI), chemical vapour deposition (CVD), and molecular atomic layer deposition (MALD), offer promising pathways to achieve new resist platforms, such as dry resists, that satisfy the stringent thickness and uniformity requirements of next-generation EUVL. These methods enable the direct incorporation of metal species into existing resist matrices or the formation of hybrid inorganic–organic resist platforms, thereby improving film uniformity, etch durability, and pattern fidelity while mitigating stochastic defects. This review highlights the latest advancements in vapour-phase-synthesized EUV resists, emphasizing material design, lithographic performance, and the underlying exposure mechanisms. Although still emerging, vapour-phase strategies are paving the way for an all-dry integration framework that could improve EUV patterning workflows and meet the demands of future technology nodes.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Ab-initio calculation of ZnGeAs{sub 2} semiconductor

The structural, electronic, optical and elastic properties of ZnGeAs{sub 2} semiconductor have been investigated using pseudopotential plane wave method within the density functional theory (DFT). The optimized lattice constants, energy gap and crystal field splitting parameter are calculated. The optical properties such as dielectric function, optical reflectivity,, extinction coefficient, absorption spectra, refractive index and electron energy loss spectrum have been studied. The values of bulk modulus (B), elastic constants (C{sub ij}), Young’s modulus (Y), Zener anisotropic factor (A), Poisson’s ratio (ν) and Debye temperature (Θ{sub D}) have been calculated. The calculated values of all these parameters are compared with the available experimental values and the values reported by different workers. A fairly good agreement has been found between them.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Distinct optical properties of relativistically degenerate matter

In this paper, we use the collisional quantum magnetohydrodynamic (CQMHD) model to derive the transverse dielectric function of a relativistically degenerate electron fluid and investigate various optical parameters, such as the complex refractive index, the reflection and absorption coefficients, the skin-depth and optical conductivity. In this model we take into accounts effects of many parameters such as the atomic-number of the constituent ions, the electron exchange, electron diffraction effect and the electron-ion collisions. Study of the optical parameters in the solid-density, the warm-dense-matter, the big-planetary core, and the compact star number-density regimes reveals that there are distinct differences between optical characteristics of the latter and the former cases due to the fundamental effects of the relativistic degeneracy and other quantum mechanisms. It is found that in the relativistic degeneracy plasma regime, such as found in white-dwarfs and neutron star crusts, matter possess a much sharper and well-defined step-like reflection edge beyond the x-ray electromagnetic spectrum, including some part of gamma-ray frequencies. It is also remarked that the magnetic field intensity only significantly affects the plasma reflectivity in the lower number-density regime, rather than the high density limit. Current investigation confirms the profound effect of relativistic degeneracy on optical characteristics of matter and can provide an important plasma diagnostic tool for studying the physical processes within the wide scope of quantum plasma regimes be it the solid-density, inertial-confined, or astrophysical compact stars.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2014

Influence of sputtering power on the optical properties of ITO thin films

Tin doped indium oxide films are widely used in transparent conducting coatings such as flat panel displays, crystal displays and in optical devices such as solar cells and organic light emitting diodes due to the high electrical resistivity and optical transparency in the visible region of solar spectrum. The deposition parameters have a commendable influence on the optical and electrical properties of the thin films. In this study, ITO thin films were prepared by RF magnetron sputtering. The properties of the films prepared under varying sputtering power were compared using UV- visible spectrophotometry. Effect of sputtering power on the energy band gap, absorption coefficient and refractive index are investigated.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Nonlinear optical characterization of ZnS thin film synthesized by chemical spray pyrolysis method

ZnS thin film was prepared by Chemical Spray Pyrolysis (CSP) method. The sample was characterized by X-ray diffraction method and Z scan technique. XRD pattern showed that ZnS thin film has hexagonal structure with an average size of about 5.6nm. The nonlinear optical properties of ZnS thin film was studied by open aperture Z-Scan technique using Q-switched Nd-Yag Laser at 532nm. The Z-scan plot showed that the investigated ZnS thin film has saturable absorption behavior. The nonlinear absorption coefficient and saturation intensity were also estimated.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Calcium manganate: A promising candidate as buffer layer for hybrid halide perovskite photovoltaic-thermoelectric systems

We have systematically studied the feasibility of CaMnO{sub 3} thin film, an n-type perovskite, to be utilized as the buffer layer for hybrid halide perovskite photovoltaic-thermoelectric device. Locations of the conduction band and the valence band, spontaneous polarization performance, and optical properties were investigated. Results indicate the energy band of CaMnO{sub 3} can match up well with that of CH{sub 3}NH{sub 3}PbI{sub 3} on separating electron-hole pairs. In addition, the consistent polarization angle helps enlarge the open circuit voltage of the composite system. Besides, CaMnO{sub 3} film shows large absorption coefficient and low extinction coefficient under visible irradiation, demonstrating high carrier concentration, which is beneficial to the current density. More importantly, benign thermoelectric properties enable CaMnO{sub 3} film to assimilate phonon vibration from CH{sub 3}NH3PbI{sub 3}. All the above features lead to a bright future of CaMnO{sub 3} film, which can be a promising candidate as a buffer layer for hybrid halide perovskite photovoltaic-thermoelectric systems.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Single crystalline Er{sub 2}O{sub 3}:sapphire films as potentially high-gain amplifiers at telecommunication wavelength

Single crystalline thin films of Er{sub 2}O{sub 3}, demonstrating efficient 1.5 μm luminescence of Er{sup 3+} at room temperature were grown on Al{sub 2}O{sub 3} substrate by molecular beam epitaxy. The absorption coefficient at 1.536 μm was found to reach 270 cm{sup −1} translating in a maximal possible gain of 1390 dBcm{sup −1}. In conjunction with the 10% higher refractive index as compared to Al{sub 2}O{sub 3}, this opens the possibility to use Er{sub 2}O{sub 3}:sapphire films as short-length waveguide amplifiers in telecommunication.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Positron accumulation effect in particles embedded in a low-density matrix

Systematic studies of the so-called positron accumulation effect for samples with particles embedded in a matrix are reported. This effect is related to energetic positrons which penetrate inhomogeneous medium. Due to differences in the linear absorption coefficient, different amounts of positrons are accumulated and annihilate in the identical volume of both materials. Positron lifetime spectroscopy and Doppler broadening of the annihilation line using Na-22 positrons were applied to the studies of the epoxy resin samples with embedded micro-sized particles of transition metals, i.e., Ni, Sn, Mo, W, and nonmetal particles, i.e., Si and NaF. The significant difference between the determined fraction of positrons annihilating in the particles and the particle volume fraction indicates the positron accumulation effect. The simple phenomenological model and Monte Carlo simulations are able to describe the main features of the obtained dependencies. The aluminum alloy with embedded Sn nanoparticles is also considered for demonstration differences between the accumulation and another related effect, i.e., the positron affinity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Ablation and cone formation mechanism on CR-39 by ArF laser irradiation

In this work, chemical properties, surface modification, and micro structures formation on ablated polyallyl di-glycol carbonate (CR-39) polymer by ArF laser irradiation (λ = 193 nm) at various fluences and pulse number were investigated. CR-39 samples have been irradiated with an ArF laser (193 nm) at a repetition rate of 1 Hz. Threshold fluence of ablation and effective absorption coefficient of CR-39 were determined. Conical microstructures (Taylor cone) formed on laser-ablated CR-39 exhibit: smooth, Taylor cone shape walls and sharp tips together with interference and well defined fringe-structure with a period of 230 nm, around cone base. Mechanism of cone formation and cone evolution of CR-39 ablated surface were investigated by change of fluences (at a given pulse number) and pulse number (at a given fluence). Cone height, cone base, and region of interface were increased in micrometer steps by increasing the total fluence. Depression on the base of the cone and the circular fringe were simulated. FTIR spectra were measured and energy dispersive x-ray analysis of irradiated and un-irradiated samples was performed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Image segmentation of nanoscale Zernike phase contrast X-ray computed tomography images

Zernike phase contrast is a useful technique for nanoscale X-ray computed tomography (CT) imaging of materials with a low X-ray absorption coefficient. It enhances the image contrast by phase shifting X-ray waves to create changes in amplitude. However, it creates artifacts that hinder the use of traditional image segmentation techniques. We propose an image restoration method that models the X-ray phase contrast optics and the three-dimensional image reconstruction method. We generate artifact-free images through an optimization problem that inverts this model. Though similar approaches have been used for Zernike phase contrast in visible light microscopy, this optimization employs an effective edge detection method tailored to handle Zernike phase contrast artifacts. We characterize this optics-based restoration method by removing the artifacts in and thresholding multiple Zernike phase contrast X-ray CT images to produce segmented results that are consistent with the physical specimens. We quantitatively evaluate and compare our method to other segmentation techniques to demonstrate its high accuracy.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Optical properties of amorphous and crystalline Sb-doped SnO{sub 2} thin films studied with spectroscopic ellipsometry: Optical gap energy and effective mass

We investigated the optical properties of amorphous and crystalline antimony (Sb)-doped tin dioxide (SnO{sub 2}) thin films grown using the co-sputtering deposition method at room temperature. We used undoped and Sb-doped (8 wt. %) SnO{sub 2} targets. Varying the relative power ratio of the two targets, we controlled the Sb-composition of the SnO{sub 2}:Sb thin films up to 2.3 at. % of Sb contents. Through annealing, the as-grown amorphous SnO{sub 2}:Sb thin films were transformed to crystalline thin films. Dielectric functions were obtained from the measured ellipsometry angles, Ψ and Δ, using the Drude and parametric optical constant models. We determined the absorption coefficients and optical gap energies of the SnO{sub 2}:Sb thin films from the dielectric functions. We found increasing optical gap energy with increasing Sb composition. Increases in the Drude tail amplitudes, a signature of free carrier concentrations, were found in annealed, crystalline thin films with increasing Sb composition. The increase in the optical gap energy with increasing Sb composition was mainly attributed to the Burstein-Moss effect. Using Hall effect measurements, we obtained Hall carrier concentrations (N{sub Hall}) and electron Hall mobilities (μ{sub Hall}). The carrier concentrations and mobilities increased from 2.6 × 10{sup 19 }cm{sup −3} and 1.0 cm{sup 2}/(V s) to 2.0 × 10{sup 20 }cm{sup −1} and 7.2 cm{sup 2}/(V s), respectively, with increasing Sb contents. This result suggests that the nominally undoped SnO{sub 2} films are unintentionally n-type doped. Assuming that the N{sub Hall} and optical carrier concentrations (N{sub opt}) were the same, we obtained the effective masses of the SnO{sub 2}:Sb thin films with increasing Sb compositions. The effective masses of the SnO{sub 2}:Sb thin films increased from 0.245 m{sub 0} to 0.4 m{sub 0} with increasing Sb doping contents, and the nonparabolicity of the conduction band was estimated. We discussed the relation between the optical (μ{sub opt}) and Hall (μ{sub Hall}) mobilities as a function of Sb contents and grain sizes.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Ambient CdCl{sub 2} treatment on CdS buffer layer for improved performance of Sb{sub 2}Se{sub 3} thin film photovoltaics

Antimony selenide (Sb{sub 2}Se{sub 3}) is appealing as a promising light absorber because of its intrinsically benign grain boundaries, suitable band gap (∼1.1 eV), strong absorption coefficient, and relatively environmentally friendly constituents. Recently, we achieved a certified 5.6% efficiency Sb{sub 2}Se{sub 3} thin film solar cell with the assistance of ambient CdCl{sub 2} treatment on the CdS buffer layer. Here, we focused on investigating the underlying mechanism from a combined materials and device physics perspective applying current density-voltage (J-V) fitting analysis, atomic force microscope, X-ray photoelectron spectroscopy, fluorescence, and UV–Vis transmission spectroscopy. Our results indicated that ambient CdCl{sub 2} treatment on CdS film not only improved CdS grain size and quality, but also incorporated Cl and more O into the film, both of which can significantly improve the heterojunction quality and device performance of CdS/Sb{sub 2}Se{sub 3} solar cells.

36 MATERIALS SCIENCE↗