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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 793 records · Page 44
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Autonomous Synthesis of Thin Film Materials with Pulsed Laser Deposition Enabled by In Situ Spectroscopy and Automation

Autonomous systems that combine synthesis, characterization, and artificial intelligence can greatly accelerate the discovery and optimization of materials, however platforms for growth of macroscale thin films by physical vapor deposition techniques have lagged far behind others. Here this study demonstrates autonomous synthesis by pulsed laser deposition (PLD), a highly versatile synthesis technique, in the growth of ultrathin WSe 2 films. Further, by combing the automation of PLD synthesis and in situ diagnostic feedback with a high-throughput methodology, this study demonstrates a workflow and platform which uses Gaussian process regression and Bayesian optimization to autonomously identify growth regimes for WSe 2 films based on Raman spectral criteria by efficiently sampling 0.25% of the chosen 4D parameter space. With throughputs at least 10x faster than traditional PLD workflows, this platform and workflow enables the accelerated discovery and autonomous optimization of the vast number of materials that can be synthesized by PLD.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Dynamic substrate reactions during room temperature heavy ion irradiation of CoCrCuFeNi high entropy alloy thin films

Abstract High entropy alloys (HEAs) are promising materials for various applications including nuclear reactor environments. Thus, understanding their behavior under irradiation and exposure to different environments is important. Here, two sets of near-equiatomic CoCrCuFeNi thin films grown on either SiO 2 /Si or Si substrates were irradiated at room temperature with 11.5 MeV Au ions, providing similar behavior to exposure to inert versus corrosion environments. The film grown on SiO 2 had relatively minimal change up to peak damage levels above 500 dpa, while the film grown on Si began intermixing at the substrate–film interface at peak doses of 0.1 dpa before transforming into a multi-silicide film at higher doses, all at room temperature with minimal thermal diffusion. The primary mechanism is radiation-enhanced diffusion via the inverse Kirkendall and solute drag effects. The results highlight how composition and environmental exposure affect the stability of HEAs under radiation and give insights into controlling these behaviors.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Highly Permeable Rubbery Thin Film Composite Membranes for CO2 Capture from Steel Mills

For presentation at the 2024 AIChE Annual Meeting, San Diego, CA, October 27-31, 2024. High-permeance and CO2-selective membranes are needed to make membrane technology economically viable for large-scale deployment of carbon capture from various industrial point sources such as steel mills. Thin film composite (TFC) membranes are necessary for this practical implementation because they can provide high permeance by forming a thin selective layer on top of a porous support layer. This presentation reports the rational design and fabrication of National Energy Technology Laboratory’s highly permeable non-aging TFC membranes achieved by: (1) synthesizing a high-performance rubbery selective material; (2) developing a high-porosity membrane support; (3) optimizing coating methods to assemble the two materials into scalable membranes; and (4) scaling up membrane supports and TFCs via a roll-to-roll process. This talk will also cover the design, computational fluid dynamic simulation, 3D printing, construction, and permeation testing of plate-and-frame membrane modules for an upcoming field demonstration at U. S. Steel’s Edgar Thomson Plant in Braddock, PA.

Zhu, Lingxiang↗
DOE OSTI2025

Synthesis and characterization of electron beam irradiation-induced damage in polycrystalline metal thin films

High-energy physics research, industrial sterilizing, and material processing depend extensively on electron beam accelerators. Exit windows are crucial components of such electron accelerator systems, maintaining vacuum integrity inside the machine while providing mechanical strength, thermal stability, and radiation resistance at the beam-target interface. In this study, thin metallic films of Ni, Ti, Cr, and V were explored for use in electron beam exit windows, and their properties were compared with the properties of their bulk counterparts. Simulation results of metal foils predicted Ti to exhibit less beam power dissipation compared to Ni. However, Ni possesses superior mechanical and structural properties compared to Ti. The performance of these films under electron beam irradiation was examined by depositing thin layers of these films on silicon and metallic substrates using magnetron sputtering and exposing them to e-beam irradiation in a controlled setup. The deposited films were subjected to a dose of approximately 66 kGy at a beam energy of 10 MeV and characterized prior to and postexposure to the beam using field emission scanning electron microscopy, atomic force microscopy, x-ray diffraction (XRD), and nanoindentation. Particular emphasis was given to characteristics like the grain structure, surface morphology, dislocation density, and hardness. XRD patterns revealed irradiation-induced changes in peak intensities, while the crystallinity remained largely unchanged. Nanoindentation results showed that the pristine and irradiated Ti and Ni films were twice as hard when compared to bulk Ti and Ni samples, regardless of the substrate type used (Si or bulk Ti, or Ni). These results emphasize the superior mechanical properties of thin metal films compared to their bulk counterparts. In conclusion, this study advances the optimization of thin film materials for robust and efficient e-beam applications, ensuring improved durability and operational reliability.

AFM↗
DOE OSTI2025

Synthesis and electronic characterization of Nd2−xSrxNiO4 thin films (0≤x≤1.4)

Layered nickelates have been studied extensively over the last three decades due to their structural similarities to the high-Tc superconducting cuprates. Using reactive oxide molecular beam epitaxy (MBE), we synthesize Nd2−xSrxNiO4 thin films for x=0−1.4 to probe the properties and electronic structure as a function of hole doping. The samples with lower doping show semiconducting behavior across the temperatures probed with an onset of metallic conductivity at x=1.4. We also present polarization-dependent O K and Ni L2,3 x-ray absorption spectra to track the evolution of the oxygen-nickel hybridization, distribution of holes between O 2p and Ni 3d states and the nickel oxidation state across the series. Angle-resolved photoemission spectroscopy (ARPES) measurements reveal a Fermi surface that comprises a cupratelike hole pocket of dx2−y2 character with an additional electron pocket of d3z2−r2 character at Γ. The emergence of a quasiparticle peak at the Fermi vector for x=1.4 corroborates the insulator-to-metal transition at x∼1. Finally, observe a fully two-dimensional Fermi surface with no momentum-dependent pseudogap, in contrast to measurements of the related bulk compound, Eu0.9Sr1.1NiO4.

Taylor, Nicole K↗
DOE OSTI2024

Boosting Thermoelectric Performance in Nanocrystalline Ternary Skutterudite Thin Films through Metallic CoTe 2 Integration

Metal–semiconductor nanocomposites have emerged as a viable strategy for concurrently tailoring both thermal and electronic transport properties of established thermoelectric materials, ultimately achieving synergistic performance. In this investigation, a series of nanocomposite thin films were synthesized, embedding metallic cobalt telluride (CoTe 2 ) nanophase within the nanocrystalline ternary skutterudite (Co(Ge 1.22 Sb 0.22 )Te 1.58 or CGST) matrix. Our approach harnessed composition fluctuation-induced phase separation and in situ growth during thermal annealing to seamlessly integrate the metallic phase. The distinctive band structures of both materials have developed an ohmic-type contact characteristic at the interface, which raised carrier density considerably yet negligibly affected the mobility counterpart, leading to a substantial improvement in electrical conductivity. The intricate balance in transport properties is further influenced by the metallic CoTe 2 phase’s role in diminishing lattice thermal conductivity. The presence of the metallic phase instigates enhanced phonon scattering at the interface boundaries. Consequently, a 2-fold enhancement in the thermoelectric figure of merit (zT ~ 1.30) is attained with CGST-7 wt. % CoTe 2 nanocomposite film at 655 K compared to that of pristine CGST.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Geometric and doping effects on radiative recombination in thin-film near-field energy converters

Modeling radiative recombination is crucial to the analysis of radiative energy converters. In this work, a local radiative recombination coefficient is defined and derived based on fluctuational electrodynamics that is applicable to thin-film cells in both the near field and far field. The predicted radiative recombination coefficient of an InAs cell deviates from the van Roosbroeck–Shockley relation when the thickness is less than 10 µm, and the difference exceeds fourfold with a 10 nm film. The local radiative recombination coefficient is orders of magnitude higher when an InAs cell is configured in the near field. The local radiative recombination coefficient reduces as the doping level approaches that of a degenerate semiconductor. The maximum output power and efficiency of a thermoradiative cell would be apparently overpredicted if the electroluminescence coefficient defined in this paper were taken as unity for heavily doped semiconductors.

Feng, Dudong↗
DOE OSTI2026

Mechanism of H 2 plasma-enabled reduction of hematite thin films

Hydrogen plasma is gaining significant interest as a promising pathway for direct iron ore reduction and for lowering process temperatures but the reduction mechanism remains poorly understood. In this work we analyzed the plasma and thermal reduction of thin-film hematite (Fe 2 O 3 ) at temperatures below 340 °C using X-ray diffraction and scanning electron microscopy with energy-dispersive X-ray spectroscopy. Plasma reduced the incubation period by an order of magnitude and increased the reduction rate by a factor of 2.6 compared to thermal reduction. Plasma-produced H-atoms facilitate the formation of numerous iron nucleation sites, bypassing the energetically unfavorable dissociative adsorption of H 2 on iron oxide. These iron nuclei can autocatalyze the reduction of the surrounding hematite via a hydrogen spillover mechanism. Our results demonstrate that plasma-derived H-atoms primarily impact the initial nucleation-limited stage. These new insights provide a mechanistic framework that can aid the implementation and optimization of hydrogen plasma-assisted iron oxide reduction at reduced temperatures.

08 HYDROGEN↗
DOE OSTI2023

Kerr, Faraday, and magnetoelectric effects in MnBi 2 Te 4 thin films

The topological magnetoelectric effect (TME) is a characteristic property of topological insulators. In this paper, we use a simplified coupled-Dirac-cone electronic structure model to theoretically evaluate the THz and far infrared Kerr and Faraday responses of thin films of MnBi 2 ⁢Te 4 with up to N = 10 septuple layers with the goal of clarifying the relationship between these convenient magnetooptical observables and the TME. Here we find that for even N, the linear Kerr and Faraday responses to an electric field vanish in the low-frequency limit, even though the magnetoelectric response is large and approximately quantized.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Monolayer organic thin films as particle-contamination–resistant coatings

Abstract Three organic monolayers coatings were developed and tested for their effectiveness to increase cleaning efficiency of attached microscale particles by air flows. The experiments were performed using silica substrates coated with these organic thin films and subsequently exposed to stainless-steel and silica microparticles as a model of contamination. Laser-induced–damage tests confirmed that the coatings do not affect the laser-induced–damage threshold values. The particle exposure results suggest that although the accumulation of particles is not significantly affected under the experimental conditions used in this work, the coated substrates exhibit significantly improved cleaning efficiency with a gas flow. A size-distribution analysis was conducted to study the adsorption and cleaning efficiency of particles of different sizes. It was observed that larger size (> 5-μm) particles can be removed from coated substrates with almost 100% efficiency. It was also determined that the coatings improve the cleaning efficiency of the smaller particles (≤ 5 μm) by 17% to 30% for the stainless steel metal and 19% to 38% for the silica particles.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Spin dynamics and relaxation in 7.6 nm thin film of La 0.7 Sr 0.3 MnO 3 /SrTiO 3 : ac magnetic susceptibility and magnetic viscosity investigations

Analysis of the results from our investigations of the temperature dependence of ac susceptibilities (χ' and χ'') and magnetic viscosity in a 7.6 nm thin film of La 0.7 Sr 0.3 MnO 3 grown on SrTiO 3 (001) substrate is presented. The Curie temperature (T C ) of this film is magnetic field (H) dependent, varying as [T C (H) - T C (0)] ~ H n with T C (0) = 270 K and n = 0.15. Temperature dependence of χ' and χ'' measured at ac frequencies f m in the range of 0.1–10 kHz shows a broad peak near 230 K associated with the blocking temperature (T B ) of spin clusters present in the 1.4 nm surface layer and a frequency dependent peak near 270 K associated with T C . The mean relaxation time τ determined from the Cole–Cole analysis of the temperature dependent χ' and χ'' is shown to fit the Vogel–Fulcher law: τ = τ 0 exp[ΔE/k B (T - T 0 )] with T 0 = 245 K, ΔE/k B = 270 K = T C and τ 0 = 1.2 x 10 -9 s. Magnetic viscosity S (measured in H = 0 for a sample cooled in H = 50 Oe) determined from the fit to the magnetization: M (t)= M (0) – S ln t, with time t up to 2 h, shows a peak at 230 K above which M (2 h) switches to negative values for temperatures up to T C (0). It is argued that this negative magnetization results from an interaction between the superparamagnetic spin clusters and the ferromagnetic phase, both being present in the temperature range of T B < T < T C .

36 MATERIALS SCIENCE↗
DOE OSTI2024

Atomic Electron Tomography of Thin Films

In the past decade, the development of atomic electron tomography (AET) [1] has allowed for the 3D characterization of atomic positions in nanoparticle [2], monolayer [3], and needle [4] geometries. Furthermore, many technologically important systems are synthesized and utilized as thin films. Several challenges in sample preparation and data analysis have been overcome to expand the scope of AET to these systems. Polycrystalline yttrium-doped hafnium dioxide (HfO 2 ) was chosen as a model system, because it is technologically relevant as a high capacitance dielectric and ferroelectric.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2025

Shear Band Formation in Thin-Film Multilayer Columns Under Compressive Loading: A Mechanistic Study

Micro-pillar compression is a popular experimental technique used for characterizing the mechanical behavior of nano- and micro-laminates. The compressive stress–strain response of the column-shaped thin-film composite can be measured, and the deformation and damage features can be revealed by post-test cross-section microscopy. The development of plastic instability in the form of localized strain concentration (shear bands), leading to eventual failure, is frequently observed. In the present study, a computational approach is used to illustrate the commonality of shear band formation from a continuum standpoint. Systematic finite element analyses are conducted, showing that the strain field tends to become localized once plastic yielding commences. Distinct shear offsets of the layered structure can be revealed from the numerical model, which is similar to those observed in experiments. The actual appearance of shear bands depends on the materials’ constitutive behavior and precise geometries. Post-yield strain hardening reduces the propensity of shear band formation, while strain softening enhances it. Imperfections such as the undulated layer geometry, as well as the frictional characteristics between the specimen and test apparatus, can also influence the shear band morphology and overall stress–strain response.

finite element modeling↗
DOE OSTI2020

The effect of annealing on optical transmittance and structure of ZLANI fluorozirconate glass thin films

In this work, we report the effect of thermal annealing on structure, composition, optical transmittance and thickness of a novel fluorozirconate glass (ZLANI) containing Zr, La, Al, Na and In fluorides. In this work, pulsed laser depo- sition was used to grow thin films of ZLANI, and thermal annealing at different temperatures was performed on the films. Annealing did not change the composition, but a clear structural evolution of the ZLANI glass was observed by transmission electron microscopy (TEM), showing that we can control microstructure independent of composition. An increase in transmittance after the film was subject to a 100 °C thermal anneal was ascribed to the removal of defects and structural relaxation in the amorphous state. Following an anneal of 200 °C, the transmittance decreases due to heterogeneous formation of crystalline nuclei and changes in the local bonding. After the final annealing at 300 °C, a wider-scale crystallization occurred, with some major crystal phases formed as Zr 2 F 8 (H 2 O) 6 and ZrO 2 , which alters the shape of the transmittance curve. The crystalline content of the crystal phases that form in the annealed films was quantified using hollow cone dark field TEM imaging. The 100 °C or 200 °C annealing decreases the film thickness by inducing structural relaxation and densification of the amorphous films, while the thickness increase of the 300 °C annealed film resulted from the formed large crystals. These results provide insights for the design of multilayer nanocomposites with a ZLANI glass matrix, which have potential applications as up-/down-conversion luminescent materials and X-ray storage phosphors.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Two-step spin-coating of vacancy-ordered double perovskites enables growth of thin films for electronic devices

Vacancy-ordered double perovskites (VODPs), such as Cs 2 TeX 6 (X = Cl, Br, I), are lead-free alternatives to conventional metal-halide perovskites (MHPs). One limitation of VODPs is the lack of processes to form thin films relevant for physical characterization and electronic devices. A two-step spin-coating method was developed for synthesizing high-quality films of Cs 2 TeBr 6 . Independently depositing CsBr and TeBr 4 enables high precursor concentrations and control over crystallization kinetics. By optimizing the spin-coating parameters, conversion of precursors to phase pure films was observed using structural and surface characterization methods. The growth of mixed-halide systems was investigated using alternative salts including CsCl and CsI. The formation of halide alloys was found to depend on the existence of routes to byproducts. Lastly, single carrier diodes of Cs2TeBr6 were designed following valence band characterization with photoelectron spectroscopy. Temperature-dependent space-charge-limited current measurements revealed that transport occurs by hopping and the hole mobility is 3.2 × 10 −5 cm 2 V −1 s −1 near room temperature. As a result, the insights from the 2-step procedure provide a pathway towards making semiconducting devices from VODPs.

Kuklinski, Owen [University of California, Santa B↗
DOE OSTI2021

Growth, sintering, and chemical states of Co supported on reducible CeO 2 (111) thin films: The effects of the metal coverage and the nature of the support

The growth, sintering, and interaction of cobalt with ceria were studied under ultrahigh vacuum conditions by vapor-deposition of Co onto well-defined CeOx(111) (1.5 < x < 2) thin films grown on Ru(0001). Charge transfer from Co to ceria occurs upon deposition of Co on CeO 1.96 and partially reduced CeO 1.83 at 300 K. X-ray photoelectron spectroscopy studies show that Co is oxidized to Co 2+ species at the cost of the reduction of Ce 4+ to Ce 3+ , at a lesser extent on reduced ceria. Co 2+ is the predominant species on CeO 1.96 at low Co coverages (e.g., ≤0.20 ML). The ratio of metallic Co/Co 2+ increases with the increase in the Co coverage. However, both metallic Co and Co 2+ species are present on CeO 1.83 even at low Co coverages with metallic Co as the major species. Scanning tunneling microscopy results demonstrate that Co tends to wet the CeO 1.96 surface at very low Co coverages at room temperature forming one-atomic layer high structures of Co–O–Ce. The increase in the Co coverage can cause the particle growth into three-dimensional structures. The formation of slightly flatter Co particles was observed on reduced CeO 1.83 . In comparison with other transition metals including Ni, Rh, Pt, and Au, our studies demonstrate that Co on ceria exhibits a smaller particle size and higher thermal stability, likely arising from strong metal–support interactions. The formed particles upon Co deposition at 300 K are present on the ceria surface after heating to 1000 K. The Co–ceria interface can be tuned by varying the Co metal coverage, the annealing temperature, and the nature of the ceria surface.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Quantum Fluctuations and Multifractally enhanced Superconductivity in Disordered Thin Films

The interplay between electron–electron interactions and weak localization (or anti-localization) phenomena in two-dimensional systems can significantly enhance the superconducting transition temperature. For this work, we develop the theory of quantum fluctuations within such multifractally enhanced superconducting states in thin films. In conditions of weak disorder, we employ the Finkel’stein nonlinear sigma model to derive an effective action for the superconducting order parameter and the quasiclassical Green’s function, meticulously accounting for the influence of quantum fluctuations. This effective action, applicable for interactions of any strength, reveals the critical role of well-known collective modes in a dirty superconductor, and its saddle-point analysis leads to modified Usadel and gap equations. These equations comprehensively incorporate the renormalizations stemming from the interplay between interactions and disorder, resulting in the non-trivial energy dependence of the gap function. Notably, our analysis establishes a direct relation between the self-consistent gap equation at the superconducting transition temperature and the known renormalization group equations for interaction parameters in the normal state.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Shallow-etched thin-film lithium niobate waveguides for highly-efficient second-harmonic generation

High-fidelity periodic poling over long lengths is required for robust, quasi-phase-matched second-harmonic generation using the fundamental, quasi-TE polarized waveguide modes in a thin-film lithium niobate (TFLN) waveguide. Here, a shallow-etched ridge waveguide is fabricated in x-cut magnesium oxide doped TFLN and is poled accurately over 5 mm. The high fidelity of the poling is demonstrated over long lengths using a non-destructive technique of confocal scanning second-harmonic microscopy. We report a second-harmonic conversion efficiency of up to 939 %.W −1 (length-normalized conversion efficiency 3757 %.W −1 .cm −2 ), measured at telecommunications wavelengths. The device demonstrates a narrow spectral linewidth (1 nm) and can be tuned precisely with a tuning characteristic of 0.1 nm/°C, over at least 40 °C without measurable loss of efficiency.

Zhao, Jie (ORCID:0000000306230125)↗