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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 793 records · Page 44
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

Large-area thin-film modules

The low cost potential of thin film solar cells can only be fully realized if large area modules can be made economically with good production yields. This paper deals with two of the critical challenges. A scheme is presented which allows the simple, economical realization of the long recognized, preferred module structure of monolithic integration. Another scheme reduces the impact of shorting defects and, as a result, increases the production yields. Analytical results demonstrating the utilization and advantages of such schemes are discussed.

Tyan, Y. S.↗
NASA NTRS1988

Planar thin film SQUID with integral flux concentrator

A thin film SQUID is disclosed having improved flux concentration combined with simplicity of design and fabrication. The SQUID starts with a wafer like substrate having simple planar geometry. A large area of superconducting film is coated on the substrate, with a small open or uncoated area remaining at its center to define a SQUID loop, and a gap in the film formed, beginning at the outer circumferential edge of the substrate and extending radially inward to the open area. A Josephson junction is formed across the gap near the open area to interrupt the electrical continuity of the SQUID loop. A coil is attached to the surface of the substrate, electrically insulated from the superconducting film, and is energized to induce flux within the SQUID which is concentrated within the open area.

Peters, Palmer N.↗
NASA NTRS1989

Making A Superconductive Thin Film

Experimental fabrication process results in superconductive thin film of YBa2Cu3O7 ("123" phase of Y/Ba/Cu/O) on substrate of green semiconducting Y2BaCuO5 (the "211" phase). Film becomes superconductive below transition temperature (Tc) of 93 K. Superconducting material to be deposited on substrate. Material then annealed in oxygen at 950 degree C for 6 h, followed by slow cooling in furnace. At this point, material had a Tc of 96 K. Transition to superconductivity at 93 K very sharp. Estimated critical current density 350 A/cm2.

Wu, Maw-Kuen↗
NASA NTRS1992

Spatiotemporal chaos near the onset of cellular growth during thin-film solidification of a binary alloy

Thin-film solidification experiments with a succinonitrile-acetone alloy are used to observe the long time-scale dynamics of cellular crystal growth at growth rates only slightly above the critical value VC = Vc(lambda sub c) for the onset of morphological instability. Under these conditions only very small amplitude cells are observed with wavelengths near the value predicted by linear stability theory lambda = lambda sub c. At long times, microstructures with wavelengths significantly finer than lambda suc c form by nucleation at defects across the interface. These interfaces do not have a unique microstructure, but seem to exhibit spatiotemporal chaos on a long time scale caused by the continual birth and death of cells by tip splitting and cell annihilation in grooves.

Lee, J. T. C.↗
NASA NTRS1995

Thin-Film Power Transformers

Transformer core made of thin layers of insulating material interspersed with thin layers of ferromagnetic material. Flux-linking conductors made of thinner nonferromagnetic-conductor/insulator multilayers wrapped around core. Transformers have geometric features finer than those of transformers made in customary way by machining and mechanical pressing. In addition, some thin-film materials exhibit magnetic-flux-carrying capabilities superior to those of customary bulk transformer materials. Suitable for low-cost, high-yield mass production.

Katti, Romney R.↗
NASA NTRS2006

Aerosol-Assisted Chemical Vapor Deposited Thin Films for Space Photovoltaics

Copper indium disulfide thin films were deposited via aerosol-assisted chemical vapor deposition using single source precursors. Processing and post-processing parameters were varied in order to modify morphology, stoichiometry, crystallography, electrical properties, and optical properties in order to optimize device-quality material. Growth at atmospheric pressure in a horizontal hot-wall reactor at 395 C yielded best device films. Placing the susceptor closer to the evaporation zone and flowing a more precursor-rich carrier gas through the reactor yielded shinier, smoother, denser-looking films. Growth of (112)-oriented films yielded more Cu-rich films with fewer secondary phases than growth of (204)/(220)-oriented films. Post-deposition sulfur-vapor annealing enhanced stoichiometry and crystallinity of the films. Photoluminescence studies revealed four major emission bands (1.45, 1.43, 1.37, and 1.32 eV) and a broad band associated with deep defects. The highest device efficiency for an aerosol-assisted chemical vapor deposited cell was 1.03 percent.

Hepp, Aloysius F.↗
NASA NTRS2013

Thin Film Heat Flux Sensors: Design and Methodology

Thin Film Heat Flux Sensors: Design and Methodology: (1) Heat flux is one of a number of parameters, together with pressure, temperature, flow, etc. of interest to engine designers and fluid dynamists, (2) The measurement of heat flux is of interest in directly determining the cooling requirements of hot section blades and vanes, and (3)In addition, if the surface and gas temperatures are known, the measurement of heat flux provides a value for the convective heat transfer coefficient that can be compared with the value provided by CFD codes.

Fralick, Gustave C.↗
DOE OSTI2023

Thin film design of amorphous hafnium oxide nanocomposites enabling strong interfacial resistive switching uniformity

A design concept of phase-separated amorphous nanocomposite thin films is presented that realizes interfacial resistive switching (RS) in hafnium-oxide-based devices. The films are formed by incorporating an average of 7% Ba into hafnium oxide during pulsed laser deposition at temperatures ≤400°C. The added Ba prevents the films from crystallizing and leads to ~20-nm-thin films consisting of an amorphous HfO x host matrix interspersed with ~2-nm-wide, ~5-to-10-nm-pitch Ba-rich amorphous nanocolumns penetrating approximately two-thirds through the films. This restricts the RS to an interfacial Schottky-like energy barrier whose magnitude is tuned by ionic migration under an applied electric field. Resulting devices achieve stable cycle-to-cycle, device-to-device, and sample-to-sample reproducibility with a measured switching endurance of ≥10 4 cycles for a memory window ≥10 at switching voltages of ±2 V. Each device can be set to multiple intermediate resistance states, which enables synaptic spike-timing–dependent plasticity. The presented concept unlocks additional design variables for RS devices.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Influence of Hydrogen and Oxygen on the Structure and Properties of Sputtered Magnesium Zirconium Oxynitride Thin Films

Nitride materials with mixed ionic and covalent bonding character and resulting good charge transport properties are attractive for optoelectronic devices. Recently, Mg-based ternary nitride materials were found to have large dielectric constants and high absorption coefficients with bandgaps appropriate for photovoltaic applications. However, their degenerate carrier concentrations still hinder their possible applications in solar cells and related optoelectronic devices. Therefore, further understanding and engineering of the parameters controlling the material properties of these ternary nitrides is highly desirable. In this paper we report that the structural, optical and electrical properties of magnesium zirconium oxynitride (MZNO) thin films synthesized by combinatorial sputtering with a wide range of cation compositions can be affected by incorporation of oxygen and hydrogen. Excess oxygen improved the crystallinity of MZNO thin films whereas hydrogen attracted oxygen and formed Mg-rich oxide layers at the grain boundaries which in turn reduced the conductivity. On the other hand, optical properties are more sensitive to the composition – both cation and anion ratios – rather than the presence of hydrogen. Compared to cation-stoichiometric MZNO (10 19 –10 20 cm -3 ), substantial reduction of carrier concentration down to ~10 14 cm -3 was achieved under Mg-rich conditions by supplying hydrogen during growth. Photoluminescence measurements showed that the films prepared with hydrogen were optoelectronically active. Overall, this study demonstrates that the material properties of MZN thin films can be significantly influenced by incorporation of oxygen and hydrogen.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Preface for the special topic collection honoring Dr. Scott Chambers’ 70th birthday and his leadership in the science and technology of oxide thin films

It is an honor to dedicate this special issue to Dr. Scott A. Chambers, who has had a rewarding and impactful career in surface science, spectroscopy, and thin film synthesis. His research career, spanning from his graduate work in the 1970’s to the present day, was built upon pioneering early work in precision thin film synthesis and spectroscopic characterization that occurred beginning in the 1960’s. Notably, this includes the contributions of both Art Gossard to precision film synthesis by molecular beam epitaxy (MBE) and Chuck Fadley to photoelectron spectroscopy; both Art and Chuck were recently honored with JVSTA commemorative issues of their own. Yet Scott is no mere copycat; he extended and expanded their contributions to further advance the field of surface science, and he applied the same scientific rigor to the emerging field of precision epitaxial oxide synthesis. This rigor was perhaps not always appreciated by the more “enthusiastic” members of the community who tended to draw exciting conclusions from limited data. He was once referred to, fondly, by a collaborator as a “spoilsport” for his penchant for using careful, defensible synthesis and characterization to prove that popular models and assumptions of the day did not stand up to scrutiny.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Atomic layer deposition of nickel sulfide thin films and their thermal and electrochemical stability

Nickel sulfides (NiS x ) show promise for a range of energy and other applications, but their (in)stability under processing and operating conditions is scarcely studied. Herein, we have developed a new NiS x atomic layer deposition process using an easily synthesized NiCl 2 (TMPDA) precursor (TMPDA = N,N,N′,N′-tetramethyl-1,3-propanediamine) with H 2 S. Thin films deposited at 165–225 °C consist mostly of the β-NiS phase and display low resistivity (∼40–120 μΩ cm), high purity (<3 at% impurities), and a rough morphology. The thermal stability of the NiS x thin films is studied using high-temperature X-ray diffraction, revealing that structural and compositional changes occur in reducing, inert, and oxidizing atmospheres at approximately 300–400 °C. Under electrochemical water splitting conditions, the films are unstable in acid due to dissolution, especially at oxidizing potentials. In an alkaline electrolyte, we do not observe Ni dissolution, but β-NiS transforms to Ni 3 S 2 under HER conditions, possibly supplemented with Ni and/or Ni(OH) 2 species. Under alkaline OER, all sulfur is lost and NiOOH is formed. In addition to offering an attractive, scalable route to the synthesis of NiS x thin films, our work highlights the importance of thermal and electrochemical (in)stability of sulfides as a crucial step for understanding and engineering materials for energy and other applications.

Mattinen, Miika [Univ. of Helsinki (Finland); Stan↗
DOE OSTI2021

Templating Functional Materials Using Self-Assembled Block Copolymer Thin-Film for Nanodevices

The nanomorphologies and nanoarchitectures that can be synthesized using block copolymer (BCP) thin-film self-assembly have inspired a variety of new applications, which offer various advantages, such as, small device footprint, low operational power and enhanced device performance. Imperative for these applications, however, is the ability to transform these small polymeric patterns into useful inorganic structures. BCP-templated inorganic nanostructures have shown the potential for use as active materials in various electronic device applications, including, field-effect transistors, photodetectors, gas sensors and many more. This article reviews various strategies that have been implemented in the past decade to fabricate devices at nanoscale using block copolymer thin films.

Subramanian, Ashwanth↗
DOE OSTI2022

Layer-by-Layer Nanoarchitectonics of Electrochemically Active Thin Films Comprised of Radical-Containing Polymers

Electroactive coatings based on non-conjugated redox-active polymers have increased in popularity with the development of thin film organic batteries. Here, control over coating deposition, redox-activity, and ion transport are key to improving their energy storage performance. In this work, the synthesis, solution state electrochemical characterization, and layer-by-layer (LbL) assembly of a nitroxide-based polycation and polyanion are presented. Solution state electrochemical characterization indicates that the rate of electron transfer for the nitroxide polyanion is much higher as compared to the nitroxide polycation. LbL thin films of the nitroxide polyanion and nitroxide polycation are assembled, demonstrating linear growth and tunable thickness (28 nm/layer pair). This work confirms that the ion transport mechanism of the LbL films during the redox reaction is influenced depending on the charge of the terminating layer, where the nitroxide polyanion can participate in self-doping, which leads to a contribution from cation transport. The nitroxide polyanion-terminated film also exhibits a higher capacity and a slightly reduced charge transfer resistance. However, it was also observed that a more pronounced capacity fade occurred for the polyanion-terminated film than the polycation-terminated film. Taken together, this highlights how oppositely charged radical-containing polyelectrolytes can form electroactive coatings for possible applications in energy storage or sensing.

25 ENERGY STORAGE↗
DOE OSTI2021

Solution-phase p-type doping of highly enriched semiconducting single-walled carbon nanotubes for thermoelectric thin films

Single-walled carbon nanotubes (SWCNTs) are attractive materials for next-generation energy-harvesting technologies, including thermoelectric generators, due to their tunable opto-electronic properties and high charge carrier mobilities. Controlling the Fermi level within these unique 1D nanomaterials is often afforded by charge transfer interactions between SWCNTs and electron or hole accepting species. Conventional methods to dope SWCNT networks typically involve the diffusion of molecular redox dopant species into solid-state thin films, but solution-phase doping could potentially provide routes and/or benefits for charge carrier transport, scalability, and stability. Here, we develop a methodology for solution-phase doping of polymer-wrapped, highly enriched semiconducting SWCNTs using a p-type charge transfer dopant, F4TCNQ. This allows doped SWCNT inks to be cast into thin films without the need for additional post-deposition doping treatments. We demonstrate that the introduction of the dopant at varying stages of the SWCNT dispersion process impacts the ultimate thermoelectric performance and observe that the dopant alters the polymer selectivity for semiconducting vs metallic SWCNTs. In contrast to dense semiconducting polymer films, where solution-phase doping typically leads to disrupted morphologies and poorer TE performance than solid-state doping, thin films of solution-doped s-SWCNTs perform similarly to their solid-state doped counterparts. Interestingly, our results also suggest that solution-phase F4TCNQ doping leads to fully ionized and dimerized F4TCNQ anions in solid-state films that are not observed in films doped with F4TCNQ after deposition. Our results provide a framework for the application of solution-phase doping to a broad array of high-performance SWCNT-based thermoelectric materials and devices that may require high-throughput deposition techniques.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1978

Progress towards high efficiency polycrystalline thin-film GaAs AMOS solar cells

Results of Ge film recrystallization using focused laser beams and GaAs film growth on such layers in the making of high efficiency thin-film AMOS solar cells are discussed. Since a conversion efficiency of 14% was obtained for an AMOS cell fabricated on sliced bulk polycrystalline GaAs, high efficiency cells are being developed by chemically vapor-depositing GaAs films on previously recrystallized evaporated Ge films to minimize the grain boundary (GB) effects. Schottky barrier solar cells made on sliced polycrystalline GaAs wafers were studied to investigate the effects of grain boundaries on cell properties and the potential efficiency of GaAs thin-film cells. Ge film recrystallization and the chemical vapor deposition (CVD) of the 2 to 3 micron thick GaAs films are described. AMOS solar cells with 100 Angstrom thick Ag metallization were made on CVD GaAs/recrystallized Ge/W substrates with an energy conversion efficiency of 8%.

Yeh, Y. C. M.↗
NASA NTRS1972

Superconducting properties of annealed Nb-Al-Ge thin films.

Discussion of the superconducting transition temperature and other superconducting properties of annealed Nb-Al-Ge thin films which were prepared by sputtering from a 3Nb-0.8Al-0.2Ge cathode. Annealing was performed in a high-vacuum environment maintained at 10 to the minus 9th torr or less, for times and temperatures near the optimum conditions for bulk Nb-Al-Ge. Films with transition temperatures from 12 to 16 K were annealed and in all cases a rise in transition temperature was observed, with the maximum value obtained thus far being 17.5 K. The current carrying capacity values, already substantially higher for unannealed thin films than for the bulk, were raised even further in the annealed samples, indicating that annealing has no detrimental effects on the flux pinning in these films.

Janocko, M. A.↗
DOE OSTI2021

Strain-Induced Nanocavitation in Block Copolymer Thin Films for High Performance Filtration Membranes

A new pore formation process was investigated for the manufacture of composite ultrafiltration membranes. Phase-separated block copolymer (BCP) thin films supported on a compliant macroporous poly(ether sulfone) (PES) support craze under tensile strain, leaving behind pores of predictable size based on the self-assembled nanoscopic domains. The high aspect ratio pores formed in this process were used to create membranes that were highly permeable (959 L/(m 2 h bar) with near complete rejection of 40 nm diameter gold nanoparticles (AuNP). By use of BCP’s inherent ability to cavitate under strain, tedious block removal steps are avoided. Membranes can thus be prepared in a simple, roll-to-roll ready, one-step process. In this initial study, BCP craze formation and filtration performance were characterized for various polymer types, molecular weights, and thicknesses. Furthermore, all these factors influenced the BCP’s thin film morphology, mechanical performance, deformation mechanism, and ultimately filtration performance. This work demonstrates a possible new path toward achieving scalable, BCP-based ultrafiltration membranes.

36 MATERIALS SCIENCE↗