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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 793 records · Page 44
All sourcesNASA NTRSDOE OSTI
DOE OSTI2012

Efficient energy transfer in light-harvesting systems: Quantum-classical comparison, flux network, and robustness analysis

Following the calculation of optimal energy transfer in thermal environment in our first paper [J. L. Wu, F. Liu, Y. Shen, J. S. Cao, and R. J. Silbey, New J. Phys. 12, 105012 (2010)], full quantum dynamics and leading-order 'classical' hopping kinetics are compared in the seven-site Fenna-Matthews-Olson (FMO) protein complex. The difference between these two dynamic descriptions is due to higher-order quantum corrections. Two thermal bath models, classical white noise (the Haken-Strobl-Reineker (HSR) model) and quantum Debye model, are considered. In the seven-site FMO model, we observe that higher-order corrections lead to negligible changes in the trapping time or in energy transfer efficiency around the optimal and physiological conditions (2% in the HSR model and 0.1% in the quantum Debye model for the initial site at BChl 1). However, using the concept of integrated flux, we can identify significant differences in branching probabilities of the energy transfer network between hopping kinetics and quantum dynamics (26% in the HSR model and 32% in the quantum Debye model for the initial site at BChl 1). This observation indicates that the quantum coherence can significantly change the distribution of energy transfer pathways in the flux network with the efficiency nearly the same. The quantum-classical comparison of the average trapping time with the removal of the bottleneck site, BChl 4, demonstrates the robustness of the efficient energy transfer by the mechanism of multi-site quantum coherence. To reconcile with the latest eight-site FMO model which is also investigated in the third paper [J. Moix, J. L. Wu, P. F. Huo, D. F. Coker, and J. S. Cao, J. Phys. Chem. Lett. 2, 3045 (2011)], the quantum-classical comparison with the flux network analysis is summarized in Appendix C. The eight-site FMO model yields similar trapping time and network structure as the seven-site FMO model but leads to a more disperse distribution of energy transfer pathways.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2010

Role of strain in polarization switching in semipolar InGaN/GaN quantum wells

The effect of strain on the valence-band structure of (112¯2) semipolar InGaN grown on GaN substrates is studied. A k·p analysis reveals that anisotropic strain in the c -plane and shear strain are crucial for deciding the ordering of the two topmost valence bands. The shear-strain deformation potential D 6 is calculated for GaN and InN using density functional theory with the Heyd–Scuseria–Ernzerhof hybrid functional [J. Heyd, G. E. Scuseria, and M. Ernzerhof, J. Chem. Phys.124, 219906 (2006)]. Using our deformation potentials and assuming a pseudomorphically strained structure, no polarization switching is observed. We investigate the role of partial strain relaxation in the observed polarization switching.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Enhancing the thermoelectric figure of merit through the reduction of bipolar thermal conductivity with heterostructure barriers

In this paper, we present theoretically that the thermoelectric figure of merit for a semiconductor material with a small band gap can be significantly enhanced near the intrinsic doping regime at high temperatures via the suppression of bipolar thermal conductivity when the minority carriers are selectively blocked by heterostructure barriers. This scheme is particularly effective in nanostructured materials where the lattice thermal conductivity is lowered by increased phonon scatterings at the boundaries, so that the electronic thermal conductivity including the bipolar term is limiting the figure of merit $zT$. We show that $zT$ can be enhanced to above 3 for p-type PbTe, and above 2 for n-type PbTe at 900 K with minority carrier blocking, when the lattice thermal conductivity is as low as 0.3 W/m K.

36 MATERIALS SCIENCE↗