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At least 793 records · Page 44

Simulation of cosmic irradiation conditions in thick target arrangements

One approach to simulate 2-pi irradiation conditions of planetary surfaces which has been widely applied in the past are bombardments of so called thick targets. A very large thick target was exposed recently to 2.1 GeV protons at the Bevatron-Bevalac in Berkeley. In a 100x100x180 cm steel-surrounded granodiorite target radioactive medium and high energy spallation products of the incident primary and of secondary particles were analyzed along the beam axis down to depths of 140 g/cm(2) in targets such as Cu, Ni, Co, Fe, T, Si, SiO2 and Al. Activities of these nuclides were exclusively determined via instrumental gamma-ray spectroscopy. Relative yields of neutron capture and spallation products induced in Co and Cu targets during the thick target bombardment are shown as a function of depth. The majority of the medium energy products such as Co-58 from Co targets exhibit a maximum at shallow depths of 40-60 g/cm(2) and then decrease exponentially. In a comparable 600 MeV proton bombarded thick target such a slight maximum for medium energy products was not observed. Rather, Co-58 activities in Co decreased steadily with the highest activity at the surface. The activities of the n-capture product Co-60 increase steadily starting at the surface. This indicates the rapidly growing flux of low energy neutrons within the target.

Theis, S.↗

Calculation of recoil implantation profiles using known range statistics

A method has been developed to calculate the depth distribution of recoil atoms that result from ion implantation onto a substrate covered with a thin surface layer. The calculation includes first order recoils considering projected range straggles, and lateral straggles of recoils but neglecting lateral straggles of projectiles. Projectile range distributions at intermediate energies in the surface layer are deduced from look-up tables of known range statistics. A great saving of computing time and human effort is thus attained in comparison with existing procedures. The method is used to calculate recoil profiles of oxygen from implantation of arsenic through SiO2 and of nitrogen from implantation of phosphorus through Si3N4 films on silicon. The calculated recoil profiles are in good agreement with results obtained by other investigators using the Boltzmann transport equation and they also compare very well with available experimental results in the literature. The deviation between calculated and experimental results is discussed in relation to lateral straggles. From this discussion, a range of surface layer thickness for which the method applies is recommended.

Fung, C. D.↗

Distribution of nitrogen and defects in SiO(x)N(y)/Si structures formed by the thermal nitridation of SiO2/Si

Previously reported nitrogen distributions in SiO2 films on Si which have been thermally nitrided at 1000 C have been explained by a kinetic model of the nitridation process which rests upon the effects of interfacial strain. A critical test of this kinetic model is the validity of the predictions regarding nitrogen distributions obtained at other nitridation temperatures. In this work, nitrogen distributions determined via X-ray photoelectron spectroscopy are reported for samples nitrided at 800 and 1150 C, and are shown to be consistent with the kinetic model. In addition, the intensity of a fluorine marker is found to correlate with the nitrogen distribution, and is postulated to be related to kinetically generated defects in the dielectric film, consistent with the strain-dependent energy of formation of defects proposed recently to explain electrical data.

Vasquez, R. P.↗

Effect of grain-boundary crystallization on the high-temperature strength of silicon nitride

Si3N4 specimens having the composition 88.7 wt pct Si3N4-4.9 wt pct SiO2-6.4 wt pct Y2O3 were sintered at 2140 C under 25 atm N2 for 1 h and then subjected to a 5 h anneal at 1500 C. Crystallization of an amorphous grain-boundary phase resulted in the formation of Y2Si2O7. The short-time 1370 C strength of this material was compared with that of material of the same composition having no annealing treatment. No change in strength was noted. This is attributed to the refractory nature of the yttrium-rich grain-boundary phase (apparently identical in both glassy and crystalline phases) and the subsequent domination of the failure process by common processing flaws.

Pierce, L. A.↗

Roedderite in the Qingzhen (EH3) chondrite

The rare mineral roedderite, (Na1.09 K0.89 Ca0.02)2.00 (Mg4.71 Fe0.27)4.98 (Si11.80 Al0.09)11.89 O30 has been found in accessory amounts in the highly unequilibrated enstatite chondrite, Qingzhen. It occurs in association with minor amounts of albite and SiO2 as inclusions within the metal or sulfide phases of metal-sulfide assemblages. The roedderite crystals are connected through oxide and silicate veins to the surrounding matrix. The presence of glass coated vesicles on the surface of the assemblages strongly suggests that roedderite originated in the presence of a fluid phase, presumably during post-accretional planetary processes.

Rambaldi, E. R.↗

Effect of oxygen barrier coatings on oxidation and embrittlement of Ti-6Al-2Sn-4Zr-2Mo foil in heat shield applications

Because of the loss of ductility with exposure to oxidizing conditions, long time applications of titanium alloys have been limited to temperatures below 700 K and short time applications have been limited to temperatures below 815 K. Oxygen barrier coatings for shielding Ti-6Al-2Sn-4Zr-2Mo alloy from oxidation during exposure to high temperatures were studied using foil gage specimens. The coatings included micrometer-thick sputtered SiO2 and chemical-vapor-deposited silicate layers both with and without an aluminum basecoat. The oxidation rates and resistance to embrittlement of the coated specimens were significantly better than those of the uncoated specimens.

Clark, R. K.↗

Design, fabrication, and performance of a whiskerless Schottky diode for millimeter and submillimeter wave applications

Design considerations, fabrication techniques, and performance predictions are presented for a planar whiskerless Schottky diode to be used (in radio astronomy applications) at 100-300 GHz. The anode and ohmic contacts are on the same side of the device, and proton bombardment is used to establish the divided surface (by making some regions of the GaAs wafer semiinsulating) prior to definition of a B-doped SiO2 finger, ohmic contacting, anode formation, and anode contact metallization (all using photolithographic techniques). The contributions of parasitic elements are calculated for a device with a 3.5-micron-deep n(+) layer doped at 2 x 10 to the 18th/cu cm, a 250-nm-thick epitaxial layer doped at 5 x 10 to the 16th/cu cm, and a 1-micron-radius anode (providing zero-bias junction capacitance 7 fE). It is predicted that such a device would have total series resistance 12.58 ohm and total shunt capacitance 1.37 fF, compared with 14.27 ohm and 0.93 fF for the corresponding whiskered device.

Mckinney, K.↗

An X-ray photoelectron spectroscopy study of the thermal nitridation of SiO2/Si

The dependence of the nitrogen distribution in thermally nitrided SiO2 films on the nitridation time and temperature has been studied by means of X-ray photoelectron spectroscopy (XPS). The photoelectron peak intensities were measured by fitting Voigt profiles to the XPS spectra and were used to calculate the film composition as a function of film depth, applying an analytical method described in detail. The times of appearance of the maxima in interfacial nitrogen concentration are shown for 800, 1000, and 1150 C, and the data are related to a kinetic model of Vasquez and Madhukar (1985), which considers the effect of interfacial strain on the nitridation kinetics. In addition, the intensity of a fluorine marker (from the HF used in the etching step) was found to correlate with the nitrogen concentration. It is postulated that the F bonds preferentially to defects. This hypothesis and the measured F intensities are consistent with the proposed strain-dependent energy of defect formation.

Vasquez, R. P.↗

The parental magma of the Nakhla achondrite - Ultrabasic volcanism on the shergottite parent body

An examination of chemical and mineral chemical data available for the cumulate and the intercumulus magma of the Nakhla meteorite is presented. The composition of the intercumulus magma, calculated by mass balance, is found to be ultrabasic (SiO2 is less than 45 percent), and the magma is enriched in incompatible elements (La/Lu=6 x Cl). The cumulus augite and intercumulus magma are in chemical equilibrium, implying that the intercumulus magma is a sample of Nakhla's parental magma. The possibility of Nakhla's Martian origin is discussed.

Treiman, A. H.↗

Correlation of processing and sintering variables with the strength and radiography of silicon nitride

A sintered Si3N4-SiO2-Y2O3 composition, NASA 6Y, was developed that reached four-point flexural average strength/standard deviation values of 857/36, 544/33, and 462/59 MPa at room temperature, 1200 and 1370 C, respectively. These strengths represented improvements of 56, 38, and 21 percent over baseline properties at the three test temperatures. At room temperature the standard deviation was reduced by over a factor of three. These accomplishments were realized by the iterative utilization of conventional X-radiography to characterize structural (density) uniformity as affected by systematic changes in powder processing and sintering parameters. Accompanying the improvement in mechanical properties was a change in the type of flaw causing failure from a pore to a large columnar beta-Si3N4 grain typically 40-80 micron long, 10-30 micron wide, and with an aspect ratio of 5:1.

Sanders, W. A.↗

Characterization of the heavily doped emitter and junction regions of silicon solar cells using an electron beam

Heavily doped emitter and junction regions of silicon solar cells are investigated by means of the electron-beam-induced-current (EBIC) technique. Although the experimental EBIC data are collected under three-dimensional conditions, it is analytically demonstrated with two numerical examples that the solutions obtained with one-dimensional numerical modeling are adequate. EBIC data for bare and oxide-covered emitter surfaces are compared with theory. The improvement in collection efficiency when an emitter surface is covered with a 100-A SiO2 film varies with beam energy; for a cell with a junction depth of 0.35 microns, the improvement is about 54 percent at 2 keV.

Luke, K. L.↗

The localization and crystallographic dependence of Si suboxide species at the SiO2/Si interface

X-ray photoemission spectroscopy has been used to examine the localization and crystallographic dependence of Si(+), Si(2+), and Si(3+) suboxide states at the SiO2/Si interface for (100)and (111)-oriented substrates with gate oxide quality thermal oxides. The Si(+) and Si(2+) states are localized within 6-10 A of the interface while the Si(3+) state extends about 30 A into the bulk SiO2. The distribution of Si(+) and Si(2+) states shows a strong crystallographic dependence with Si(2+) dominating on (100) substrates and Si(+) dominating on (111) substrates. This crystallographic dependence is anticipated from consideration of ideal unreconstructed (100) and (111) Si surfaces, suggesting that (1) the Si(+) and Si(2+) states are localized immediately within the first monolayer at the interface and (2) the first few monolayers of substrate Si atoms are not significantly displaced from the bulk. The total number of suboxide states observed at the SiO2/Si interface corresponds to 94 and 83 percent of a monolayer for these (100) and (111) substrates, respectively.

Grunthaner, P. J.↗

Shallow n(+) diffusion into InP by an open-tube diffusion technique

Very shallow n(+) layers have been obtained in InP by using gallium sulfide as a source for sulfur diffusion, and chemically vapor-deposited SiO2 as a cap. Diffusions were carried out from 585 to 725 C in an open-tube system with a nitrogen ambient. The doping profile of sulfur in InP is estimated to be of the complementary error function type with a surface concentration of 5.6 x 10 to the 18th/cc and a diffusion constant of 1.1 x 10 to the -14th sq cm/s at 670 C. Diodes made on n(+)-p junctions obtained by this diffusion technique show ideality factors close to unity and saturation current densities as low as 3.4 x 10 to the -15th A/sq cm, signifying the presence of a defect-free junction. These diffusions, with junction depths in the 400-700 A range, are ideal for solar cell applications.

Ghandhi, Sorab K.↗

Mantle heterogeneity and crustal recycling in Archean granite-greenstone belts - Evidence from Nd isotopes and trace elements in the Rainy Lake area, Superior Province, Ontario, Canada

Crustal evolution in the Rainy Lake area, Ontario is studied in terms of geochemical characteristics. The Nd isotope data are examined for heterogeneity of the Archean mantle, and the Sm/Nd depletion of the mantle is analyzed. The Nd isotope systematics of individual rock suites is investigated in order to understand the difference between crust and mantle sources; the precursors and petrogenetic processes are discussed. The correlation between SiO2 content and Nd values is considered. Rapid recycling of crustal components, which were previously derived from depleted mantle sources, is suggested based on the similarity of the initial Nd isotopic composition for both mantle-derived and crustally-derived rocks.

Shirey, Steven B.↗

Barred olivine chondrules in ordinary chondrites

The characteristics of 125 barred olivine chondrules identified in polished thin sections of 26 H-L-LL3-6 chondrites were studied, using an electron microprobe for determining mineral abundances and a broad-beam electron microprobe for determining bulk compositions. Compared with all chondrule types in the H-L-LL3 ordinary chondrites, the barred olivine chondrules were found to be enriched in FeO, Al2O3, Na2O, and K2O and depleted in SiO2 and MgO; they were also found to be enriched in the feldspathic component. It is concluded that the precursor components of barred olivine chondrules consisted of a mixture of an olivine-rich component, a refractory-rich component containing Al2O3, TiO2, and CaO, and a volatile-rich alkalic component. This unusual combination implies high temperatures of melting for the refractory component and low temperatures for the volatile component, supporting the hypothesis of Grossman and Wasson (1983) that the alkalies condensed on the alumina already available.

Weisberg, Michael K.↗

Tektite-like bodies at Lonar Crater, India - Implications for the origin of tektites

Homogeneous dense glass bodies (both irregular and splash form) with high silica contents (about 67 pct SiO2) occur in the vicinity of Lonar Crater, India. Their lack of microlites and mineral remnants and their uniform chemical composition virtually preclude a volcanic origin. They are similar to tektites reported in the literature. While such a close association of tektite-like bodies with impact craters is already known (Aouelloul Crater, Mauritania; Zhamanshin Crater, U.S.S.R.), the tektite-like bodies at Lonar Crater are unique in that they occur in an essentially basaltic terrain. Present geochemical data are consistent with these high silica glass bodies being impact melt products of two-thirds basalt and one-third local intertrappean sediment (chert). The tektite-like bodies of the impact craters Lonar, Zhamanshin, and Aouelloul are generally similar. Strong terrestrial geochemical signatures reflect the target rock REE patterns and abundance ratios and demonstrate their terrestrial origin resulting from meteorite impact, as has been suggested by earlier workers.

Murali, A. V.↗

Oxygen measurements in thin ribbon silicon

The oxygen content of thin silicon ribbons grown by the dendritic web technique was measured using a modification of the ASTM method based on Fourier transform infrared spectroscopy. Web silicon was found to have a high oxygen content, ranging from 13 to 19 ppma, calculated from the absorption peak associated with interstitial oxygen and using the new ASTM conversion coefficient. The oxygen concentration changed by about 10 percent along the growth direction of the ribbon. In some samples, a shoulder was detected on the absorption peak. A similar shoulder in Czochralski grown material has been variously interpreted in the literature as due to a complex of silicon, oxygen, and vacancies, or to a phase of SiO2 developed along dislocations in the material. In the case of web silicon, it is not clear which is the correct interpretation.

Hyland, S. L.↗

Rb-Sr and Sm-Nd systematics of cherts and other siliceous deposits

An analysis of marine and lacustrine cherts demonstrates that Rb-Sr and Sm-Nd systems may be used in elucidating the origin and evolution of cherts, and that the Rb-Sr system may be used for dating. All samples have high Rb/Sr ratios, and though the site of these elements in cherts was not established, they appear to be correlated with Al content. Sm/Nd ratios were typical of continental sources, and the results show the Rb-Sr system in cherts to be isolated from the associated carbonate, with little Sr exchange. Data suggest that in many cases cherts are formed by dissolved SiO2 nucleating on clay-like material which preserves the isotropic characteristics of the detrital source, while in some cases it is possible that cherts were formed from silica-saturated waters from a nonmarine source.

Weis, D.↗