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At least 793 records · Page 44
All sourcesNASA NTRSDOE OSTI
NASA NTRS1975

Silicon ions below 100 km - A case for SiO2/+/

An investigation regarding the occurrence of Si ions is conducted, taking into account an unusual metal ion structure observed during a meteor shower event. Loss processes involving silicon oxides are considered in connection with a study of the reasons for the unique Si(+) distribution found. It is suggested that below 100 km Si(+) is rapidly depleted by two- and three-body reactions with molecular oxygen, forming SiO2(+) which then recombines.

Goldberg, R. A.↗
NASA NTRS1975

On the nature of the intercloud medium

Previous analyses of Copernicus observations of interstellar absorption in the spectra of unreddened stars are reviewed in the framework of steady-state ionization models for the intercloud (low-density) component of the interstellar medium. A simple homogeneous model is described which accounts for the H, C, N, S, and Si interstellar lines in the spectrum of lambda Sco in terms of an extensive low-density medium photoionized by Lyman continuum radiation from the II Sco OB association. Quantitative constraints are placed on the maximum permissible flux of diffuse soft X-rays, and the model is generalized to interpret the observed ion, electron, and hydrogen column densities in the low-density medium. Severe constraints are found to be imposed on ionization models by the ratios Si III/Si, Si IV/Si, and S IV/S. It is concluded that the observations may be explained if 10 to 30% of a representative line of sight passes through a photoionized medium of density 0.1 to 0.2/cu cm, if H I constitutes the bulk of the gas along the line of site, and if the gas is at a similar density or is in the form of shielded clumps or clouds.

Hill, J. K.↗
NASA NTRS1976

Chemical vapor deposition growth

A chemical vapor deposition (CVD) reactor system with a vertical deposition chamber was used for the growth of Si films on glass, glass-ceramic, and polycrystalline ceramic substrates. Silicon vapor was produced by pyrolysis of SiH4 in a H2 or He carrier gas. Preliminary deposition experiments with two of the available glasses were not encouraging. Moderately encouraging results, however, were obtained with fired polycrystalline alumina substrates, which were used for Si deposition at temperatures above 1,000 C. The surfaces of both the substrates and the films were characterized by X-ray diffraction, reflection electron diffraction, scanning electron microscopy optical microscopy, and surface profilometric techniques. Several experiments were conducted to establish baseline performance data for the reactor system, including temperature distributions on the sample pedestal, effects of carrier gas flow rate on temperature and film thickness, and Si film growth rate as a function of temperature.

Ruth, R. P.↗
NASA NTRS1976

Chemical vapor deposition growth

A laboratory type CVD reactor system with a vertical deposition chamber and sample pedestal heated by an external RF coil has been extensively modified by installation of mass flow controllers, automatic process sequence timers, and special bellows-sealed air-operated valves for overall improved performance. Various film characterization procedures, including classical metallography, SEM analyses, X ray diffraction analyses, surface profilometry, and electrical measurements (resistivity, carrier concentration, mobility, spreading resistance profiles, and minority-carrier lifetime by the C-V-t method) area used to correlate Si sheet properties with CVD parameters and substrate properties. Evaluation procedures and measurements are given. Experimental solar cell structures were made both in epitaxial Si sheet (on sapphire substrates) and in polycrystalline material on alumina substrates, the former to provide an indication of what might be an upper limit on performance of the latter. Preliminary results are given, as obtained in cell structures not specially designed to allow for the unique properties of the sheet material, and fabricated in material known to be far from optimum for photovoltaic performance. Low power conversion efficiencies have been obtained in the epitaxial as well as the polycrystalline Si sheet.

Ruth, R. P.↗
NASA NTRS1977

Germanium-silicon solid solutions

An experiment on melting and directional crystallization of an antimony (Sb) doped germanium silicon (GeSi) solid solution was designed for the Apollo-Soyuz Test Project (ASTP) to study the possibility of using zero-g conditions for obtaining solid-solution monocrystals with uniformly distributed components. Crystallization in the zero-g environment did not occur under ideal stationary growth and segregation conditions. Crystallization under zero-g conditions revealed the heterogeneous nature of Si and Sb distribution in the cross sections of crystals. The presence of the radial thermal gradient in the multipurpose furnace could be one of the reasons for such Si and Sb distribution. The structure of space-grown crystals correlates with the nature of heterogeneities of Si and Sb distribution in crystals. The type of surface morphology and the contour observed in space-grown crystals were never observed in ground-based crystals and indicate the absence of wetting of the graphitized walls of the ampoule by the melt during melting and crystallization.

Zemskov, V. S.↗
NASA NTRS1977

Solar silicon via improved and expanded metallurgical silicon technology

A completed preliminary survey of silica sources indicates that sufficient quantities of high-purity quartz are available in the U.S. and Canada to meet goals. Supply can easily meet demand for this little-sought commodity. Charcoal, as a reductant for silica, can be purified to a sufficient level by high-temperature fluorocarbon treatment and vacuum processing. High-temperature treatment causes partial graphitization which can lead to difficulty in smelting. Smelting of Arkansas quartz and purified charcoal produced kilogram quantities of silicon having impurity levels generally much lower than in MG-Si. Half of the goal was met of increasing the boron resistivity from 0.03 ohm-cm in metallurgical silicon to 0.3 ohm-cm in solar silicon. A cost analysis of the solidification process indicate $3.50-7.25/kg Si for the Czochralski-type process and $1.50-4.25/kg Si for the Bridgman-type technique.

Hunt, L. P.↗
NASA NTRS1977

Instantaneous relationship between solar inertial and local vertical local horizontal attitudes

The instantaneous relationship between the Solar Inertial (SI) and Local Vertical Local Horizontal (LVLH) coordinate systems is derived. A method is presented for computation of the LVLH to SI rotational transformation matrix as a function of an input LVLH attitude and the corresponding look angles to the sun. Logic is provided for conversion between LVLH and SI attitudes expressed in terms of a pitch, yaw, roll Euler sequence. Documentation is included for a program which implements the logic on the Hewlett-Packard 97 programmable calculator.

Vickery, S. A.↗
NASA NTRS1976

Silicon monoxide in the 4 micron infrared spectrum of long-period variables

The first-overtone sequence of vibration-rotation transitions of the free radical silicon monoxide are shown to have extreme phase-dependent variations in the spectra of two M-type long-period variables, Omicron Ceti and R Leonis, and the mild S-type long-period variable, Chi Cygni. At maximum light, the SiO band heads are not detectable. Near minimum light, the band heads of (Si-25)O are detected in the 4-micron spectra of all three stars. The band heads of the terrestrially less abundant isotopic species, (Si-29)O and (Si-30)O, are detected in Chi Cygni. Possible explanations of the phase-dependent behavior are discussed, and the role of the stellar chromosphere is considered.

Hinkle, K. H.↗
NASA NTRS1977

Abundance variations in high-velocity interstellar gas

Based on line-of-sight models and profile fitting, abundance variations of Ca, Si, Fe, and Na in high-velocity interstellar clouds toward Mu Columbae, HD 28497, and HD 50896 are discussed. The correlation of larger ratios N(Ca II)/N(Na I) with increasing radial velocity in clouds with absolute values of radial velocity from 20 to 100 km/s, is shown to quite likely be due to abundance variations in Ca rather than an ionization effect. Copernicus UV data show that the ratios N(Fe II)/N(S II) and N(Si II)/N(S II) have the same velocity correlation as Ca II, and the ambiguity concerning the relative abundance of Na I to hydrogen is removed. Theories of grain disruption are discussed as they relate to the observed Ca, Si, and Fe enhancements and their correlation with cloud velocity.

Shull, J. M.↗
NASA NTRS1977

Chromospheric limb spectra from Skylab - 2000 to 3200 A

Chromospheric limb spectra of a quiet-sun region between 2000 and 3200 A recorded by the normal-incidence spectrograph on Skylab are discussed. The spectral resolution is 0.12 A, and the projected slit area on the sun is 2 by 60 arcsec. A list of lines with wavelengths, identifications, and absolute intensities is given for the spectrum recorded at +4 arcsec outside the white-light limb. The intensity behavior outside the limb is shown for lines of the ions C II, Si II, Cr II, Mn II, Fe II, Fe III, Co II, and Ni II. The widths of the intersystem lines of Si II and C II increase monotonically with height above the limb. The full width at half-maximum of the Si II lines increases from 0.034 A at the limb to 0.27 A at +12 arcsec above the limb. The widths of the C II lines increase from 0.17 A at +2 arcsec to 0.31 A at +12 arcsec.

Doschek, G. A.↗
NASA NTRS1977

Optical detection of blade flutter

The paper examines the capabilities of photoelectric scanning (PES) and stroboscopic imagery (SI) as optical monitoring tools for detection of the onset of flutter in the fan blades of an aircraft gas turbine engine. Both optical techniques give visual data in real time as well as video-tape records. PES is shown to be an ideal flutter monitor, since a single cathode ray tube displays the behavior of all the blades in a stage simultaneously. Operation of the SI system continuously while searching for a flutter condition imposes severe demands on the flash tube and affects its reliability, thus limiting its use as a flutter monitor. A better method of operation is to search for flutter with the PES and limit the use of SI to those times when the PES indicates interesting blade activity.

Nieberding, W. C.↗
NASA NTRS1978

Silicon crystals: Process for manufacturing wafer-like silicon crystals with a columnar structure

Wafer-like crystals suitable for making solar cells are formed by pouring molten Si containing suitable dopants into a mold of the desired shape and allowing it to solidify in a temperature gradient, whereby the large surface of the melt in contact with the mold is kept at less than 200 D and the free surface is kept at a temperature of 200-1000 D higher, but below the melting point of Si. The mold can also be made in the form of a slit, whereby the 2 sides of the mold are kept at different temperatures. A mold was milled in the surface of a cylindrical graphite block 200 mm in diameter. The granite block was induction heated and the bottom of the mold was cooled by means of a water-cooled Cu plate, so that the surface of the mold in contact with one of the largest surfaces of the melt was held at approximately 800 D. The free surface of the melt was subjected to thermal radiation from a graphite plate located 2 mm from the surface and heated to 1500 D. The Si crystal formed after slow cooling to room temperature had a columnar structure and was cut with a diamond saw into wafers approximately 500 mm thick. Solar cells prepared from these wafers had efficiencies of 10 to 11%.

Authier, B.↗
NASA NTRS1978

Photocapacitive MIS infrared detectors

A new class of room-temperature infrared detectors has been developed through use of metal-insulator-semiconductor (MIS) or metal-insulator-semiconductor-insulator-metal (MISIM) slabs. The detectors, which have been fabricated from Si, Ge and GaAs, rely for operation on the electrical capacitance variations induced by modulated incident radiation. The peak detectivity for a 1000-A Si MISIM detector is comparable to that of a conventional Si detector functioning in the photovoltaic mode. Optimization of the photocapacitive-mode detection sensitivity is discussed.

Sher, A.↗
NASA NTRS1978

Solar electric propulsion and interorbital transportation

In-house MSFC and contracted systems studies have evaluated the requirements associated with candidate SEP missions and the results point to a standard system approach for both program flexibility and economy. The prospects for economical space transportation in the 1980s have already provided a stimulus for Space Industrialization (SI) planning. Two SI initiatives that are used as examples for interorbital transportation requirements are discussed - Public Service Platforms and Satellite Power System. The interorbital requirements for SI range from support of manned geosynchronous missions to transfers of bulk cargo and large-delicate space structures from low earth orbit to geosynchronous orbit.

Austin, R. E.↗
NASA NTRS1978

Chemical vapor deposition growth

The objective was to investigate and develop chemical vapor deposition (CVD) techniques for the growth of large areas of Si sheet on inexpensive substrate materials, with resulting sheet properties suitable for fabricating solar cells that would meet the technical goals of the Low Cost Silicon Solar Array Project. The program involved six main technical tasks: (1) modification and test of an existing vertical-chamber CVD reactor system; (2) identification and/or development of suitable inexpensive substrate materials; (3) experimental investigation of CVD process parameters using various candidate substrate materials; (4) preparation of Si sheet samples for various special studies, including solar cell fabrication; (5) evaluation of the properties of the Si sheet material produced by the CVD process; and (6) fabrication and evaluation of experimental solar cell structures, using impurity diffusion and other standard and near-standard processing techniques supplemented late in the program by the in situ CVD growth of n(+)/p/p(+) sheet structures subsequently processed into experimental cells.

Ruth, R. P.↗
NASA NTRS1979

Laser Techniques in Photovoltaic Research

High-power laser pulses were used to replace the conventional high temperature furnace processing for the p-n junction formation step in high speed, low cost solar cell fabrication. Three different approaches to junction formation were tested: (1) laser annealing of ion-implanted Si in which laser radiation is used to remove the radiation damage and to recover the electrical activity in the implanted layer; (2) a process in which a thin film of dopant is first deposited on the substrate and then incorporated into the near-surface region by laser-induced diffusion; and (3) a process in which a heavily doped amorphous silicon layer is deposited on the Si substrate and epitaxially regrown from the melted substrate layer by laser radiation. All three methods were found to provide suitable candidates for high efficiency Si solar cells.

Young, R. T.↗
NASA NTRS1979

Interstellar absorption lines in the spectrum of Gamma Velorum

Copernicus scans of selected interstellar absorption lines in the UV spectrum of Gamma Vel are analyzed, together with ground-based data, to obtain column densities for various ion states of C, N, O, Na, Mg, Al, Si, P, S, Cl, Ar, Ca, Mn, Fe, and CO. N I and O I are fitted to a single empirical curve of growth with a velocity parameter (b) of 8 km/s; Mg II, Si II, P II, S II, Mn II, and Fe II are fitted to another curve with b between 3 and 9 km/s. Abundance determinations relative to H I show that: (1) C, N, P, S, and Ar are probably close to their solar values; (2) O may be depleted by about a factor of 2; (3) Mg, Al, Si, Cl, Mn, and Fe are depleted by a factor of 4 or more: (4) Al is depleted by at least a factor of 10 in the H II region; and (5) both N V and O VI are present, but not C IV. The N V/O VI ratio implies that the electron temperature in the H II region is about 275,000 K.

Morton, D. C.↗
NASA NTRS1979

Tests of low background photo conductors

In support of two infrared astronomy space projects, the IRAS satellite and the IRT on Spacelab 2, low-background tests were carried out on the performance and characterization of Si:Ga, Si:As, Si:Sb and Ge:Ga photoconductive detectors. These test results represent a useful appraisal of this family of detectors when operated at 1.8-4.2 K and at background power levels of 10 to the -14th to 10 to the -13th W. In addition to detector performance data, results are also presented on cryogenically cooled MOSFET amplifiers operated in the source follower and in the balanced-dc-TIA configurations.

Young, E. T.↗