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NASA NTRS1984

Investigation of critical surface degradation effects on coatings and solar cells developed in Germany (S1002)

Various coatings developed in the FRG (i.e., second-surface mirrors with interference filters with and without conductive layers, conductive layers on solar-cell covers, and selective absorber coatings) have been qualified by accelerated tests under simulated space environment conditions. Experiments with coatings and solar cells have shown, however, that the thermo-optical behavior can differ considerably when performed on the ground and in space because of the great difficulty in simulating the space environment realistically. The objective of this experiment is to qualify these coatings under realistic space environment conditions. In addition, the experiment will provide design criteria, techniques, and test methods to insure control of the combined space and spacecraft environment effects, such as contamination, electrical conductance, and optical degradation, on the coatings. Data to be measured include the temperature of the samples, the electrical resistance of the conductive layers of the samples, the short circuit current of the solar-cell modules, and the deposition of contaminants on the samples (using quartz crystal microbalances (QCM's)).

Preuss, L.↗

NASA NTRS1983

Process Research On Polycrystalline Silicon Material (PROPSM)

The performance-limiting mechanisms in large-grain (greater than 1 to 2 mm in diameter) polycrystalline silicon solar cells were investigated by fabricating a matrix of 4 sq cm solar cells of various thickness from 10 cm x 10 cm polycrystalline silicon wafers of several bulk resistivities. Analysis of the illuminated I-V characteristics of these cells suggests that bulk recombination is the dominant factor limiting the short-circuit current. The average open-circuit voltage of the polycrystalline solar cells is 30 to 70 mV lower than that of co-processed single-crystal cells; the fill-factor is comparable. Both open-circuit voltage and fill-factor of the polycrystalline cells have substantial scatter that is not related to either thickness or resistivity. This implies that these characteristics are sensitive to an additional mechanism that is probably spatial in nature. A damage-gettering heat-treatment improved the minority-carrier diffusion length in low lifetime polycrystalline silicon, however, extended high temperature heat-treatment degraded the lifetime.

Culik, J. S.↗

NASA NTRS1984

Model of solar cell proton damage

A short circuit current (I sub sc) degradation model for gallium arsenide (GaAs) solar cells irradiated by protons from low energy to 100 MeV was developed. This model was found to be satisfactory in predicting the I sub sc degradation of GaAs cells, but not that of silicon (Si) cells. A modification to the aforementioned model that preserves the optical wavelength dependency in the photogeneration of minority carrier pairs was described herein. Spectral Si and GaAs response and I sub sc for the Si and GaAs solar cells were discussed, and also were presented in graph form. The overall predictability of the modified model was deemed to be satisfactory.

Yaung, J. Y.↗

NASA NTRS1984

Equivalent electron fluence for solar proton damage in GaAs shallow junction cells

The short-circuit current reduction in GaAs shallow junction heteroface solar cells was calculated according to a simplified solar cell damage model in which the nonuniformity of the damage as a function of penetration depth is treated explicitly. Although the equivalent electron fluence was not uniquely defined for low-energy monoenergetic proton exposure, an equivalent electron fluence is found for proton spectra characteristic of the space environment. The equivalent electron fluence ratio was calculated for a typical large solar flare event for which the proton spectrum is PHI(sub p)(E) = A/E(p/sq. cm) where E is in MeV. The equivalent fluence ratio is a function of the cover glass shield thickness or the corresponding cutoff energy E(sub c). In terms of the cutoff energy, the equivalent 1 MeV electron fluence ratio is r(sub p)(E sub c) = 10(9)/E(sub c)(1.8) where E(sub c) is in units of KeV.

Wilson, J. W.↗

NASA NTRS1983

Surface and allied studies in silicon solar cells

Two main results are presented. The first deals with a simple method that determines the minority-carrier lifetime and the effective surface recombination velocity of the quasi-neutral base of silicon solar cells. The method requires the observation of only a single transient, and is amenable to automation for in-process monitoring in manufacturing. This method, which is called short-circuit current decay, avoids distortion in the observed transient and consequent inacccuracies that arise from the presence of mobile holes and electrons stored in the p/n junction spacecharge region at the initial instant of the transient. The second main result consists in a formulation of the relevant boundary-value problems that resembles that used in linear two-port network theory. This formulation enables comparisons to be made among various contending methods for measuring material parameters of p/n junction devices, and enables the option of putting the description in the time domain of the transient studies in the form of an infinite series, although closed-form solutions are also possible.

Lindholm, F. A.↗

NASA NTRS1984

The effects of lithium counterdoping on radiation damage and annealing in n(+)p silicon solar cells

Boron-doped silicon n(+)p solar cells were counterdoped with lithium by ion implantation and the resultant n(+)p cells irradiated by 1 MeV electrons. Performance parameters were determined as a function of fluence and a deep level transient spectroscopy (DLTS) study was conducted. The lithium counterdoped cells exhibited significantly increased radiation resistance when compared to boron doped control cells. Isochronal annealing studies of cell performance indicate that significant annealing occurs at 100 C. Isochronal annealing of the deep level defects showed a correlation between a single defect at E sub v + 0.43 eV and the annealing behavior of short circuit current in the counterdoped cells. The annealing behavior was controlled by dissociation and recombination of this defect. The DLTS studies showed that counterdoping with lithium eliminated three deep level defects and resulted in three new defects. The increased radiation resistance of the counterdoped cells is due to the interaction of lithium with oxygen, single vacancies and divacancies. The lithium-oxygen interaction is the most effective in contributing to the increased radiation resistance.

Weinberg, I.↗

NASA NTRS1984

Definition, analysis and development of an optical data distribution network for integrated avionics and control systems. Part 2: Component development and system integration

Fiber optic transmission is emerging as an attractive concept in data distribution onboard civil aircraft. Development of an Optical Data Distribution Network for Integrated Avionics and Control Systems for commercial aircraft will provide a data distribution network that gives freedom from EMI-RFI and ground loop problems, eliminates crosstalk and short circuits, provides protection and immunity from lightning induced transients and give a large bandwidth data transmission capability. In addition there is a potential for significantly reducing the weight and increasing the reliability over conventional data distribution networks. Wavelength Division Multiplexing (WDM) is a candidate method for data communication between the various avionic subsystems. With WDM all systems could conceptually communicate with each other without time sharing and requiring complicated coding schemes for each computer and subsystem to recognize a message. However, the state of the art of optical technology limits the application of fiber optics in advanced integrated avionics and control systems. Therefore, it is necessary to address the architecture for a fiber optics data distribution system for integrated avionics and control systems as well as develop prototype components and systems.

Yen, H. W.↗

NASA NTRS1984

Radiation effects in silicon and gallium arsenide solar cells using isotropic and normally incident radiation

Several types of silicon and gallium arsenide solar cells were irradiated with protons with energies between 50 keV and 10 MeV at both normal and isotropic incidence. Damage coefficients for maximum power relative to 10 MeV were derived for these cells for both cases of omni-directional and normal incidence. The damage coefficients for the silicon cells were found to be somewhat lower than those quoted in the Solar Cell Radiation Handbook. These values were used to compute omni-directional damage coefficients suitable for solar cells protected by coverglasses of practical thickness, which in turn were used to compute solar cell degradation in two proton-dominated orbits. In spite of the difference in the low energy proton damage coefficients, the difference between the handbook prediction and the prediction using the newly derived values was negligible. Damage coefficients for GaAs solar cells for short circuit current, open circuit voltage, and maximum power were also computed relative to 10 MeV protons. They were used to predict cell degradation in the same two orbits and in a 5600 nmi orbit. Results show the performance of the GaAs solar cells in these orbits to be superior to that of the Si cells.

Anspaugh, B. E.↗

NASA NTRS1983

Inherent overload protection for the series resonant converter

The overload characteristics of the full bridge series resonant power converter are considered. This includes analyses of the two most common control methods presently in use. The first of these uses a current zero crossing detector to synchronize the control signals and is referred to as the alpha controller. The second is driven by a voltage controlled oscillator and is referred to as the gamma controller. It is shown that the gamma controller has certain reliability advantages in that it can be designed with inherent short circuit protection. Experimental results are included for an 86 kHz converter using power metal-oxide-semiconductor field-effect transistors (MOSFETs).

King, R. J.↗

NASA NTRS1985

Measuring Recombination Velocities in Solar Cells

Electron-beam scanning method suggested for determining back-surface recombination velocity, SB, of back-surface-field (BSF) solar photovoltaic cell. Recombination velocity important because smaller value correlated with smaller saturation current and therefore higher cell efficiency. Method involves analyzing short-circuit current measured while electron beam scanned along edge of cell.

Vonroos, O.↗

NASA NTRS1985

Damping Relaxation Oscillations in Laser Diodes

Proposed semiconductor laser modulated at frequencies up to near its resonant frequency more efficiently than older devices. New laser uses two different effective carrier lifetimes: one for dc and lowfrequency operation and another for operation near resonant frequency. Laser part of bipolar transistor with capacitor that serves as ac short circuit.

Katz, J.↗

NASA NTRS1985

Solar Cells With Multiple Small Junctions

Concept for improving efficiency of photovoltaic solar cells based on decreasing p/n junction area in relation to total surface area of cell. Because of reduced junction area, surface leakage drops and saturation current density decreases. Surface passivation helps to ensure short-circuit current remains at high value and response of cells to blue light increases.

Daud, T.↗

NASA NTRS1986

Enhancing Centrifugal Separation With Electrophoresis

Separation of biological cells by coil-planet centrifuge enhanced by electrophoresis. By itself, coil-planet centrifuge offers relatively gentle method of separating cells under low centrifugal force in physiological medium that keeps cells alive. With addition of voltage gradient to separation column of centrifuge, separation still gentle but faster and more complete. Since separation apparatus contains no rotary seal, probability of leakage, contamination, corrosion, and short circuits reduced.

Herrmann, F. T.↗

NASA NTRS1986

Tester for Distress Beacons

Distress beacons on aircraft and boats checked for proper operation with aid of onboard monitor. Monitor mounted in aircraft cockpit or at wheel of boat. Connected to beacon electronics by cable. Monitor used with interface circuitry in beacon, which acts as buffer so that operation of beacon is not adversely affected if monitor is removed or if connecting cable is accidentally short circuited.

Wade, W. R.↗

NASA NTRS1986

Four-Cylinder Stirling Engine Control Simulation

Four-cylinder, Stirling-engine, transient-engine-simulation computer program developed. Program intended for control analysis. Associated engine model simplified to shorten computer calculation time. Model includes engine mechanical-drive dynamics and vehicle-load effects. Computer program also includes subroutines that allow acceleration of engine by addition of hydrogen to system and braking of engine by short circuiting of working spaces.

Daniele, C. J.↗

NASA NTRS1984

A comparison of lightning and nuclear electromagnetic pulse response of a helicopter

A numerical modeling technique is utilized to investigate the response of a UH-60A helicopter to both lightning and nuclear electromagnetic pulses (NEMP). The analytical approach involves the three-dimensional time domain finite-difference solutions of Maxwell's equations. Both the external currents and charges as well as the internal electromagnetic fields and cable responses are computed. Results of the analysis indicate that, in general, the short circuit current on internal cables is larger for lightning, whereas the open-circuit voltages are slightly higher for NEMP. The lightning response is highly dependent upon the rise time of the injected current as was expected. The analysis shows that a coupling levels to cables in a helicopter are 20 to 30 dB larger than those observed in fixed-wing aircraft.

C C Easterbrook↗

NASA NTRS1985

Process Research on Polycrystalline Silicon Material (PROPSM)

Results of hydrogen-passivated polycrysalline silicon solar cell research are summarized. The short-circuit current of solar cells fabricated from large-grain cast polycrystalline silicon is nearly equivalent to that of single-crystal cells, which indicates long bulk minority-carrier diffusion length. Treatments with molecular hydrogen showed no effect on large-grain cast polycrystalline silicon solar cells.

Culik, J. S.↗

NASA NTRS1984

Environmentally-induced voltage limitations in large space power systems

Large power systems proposed for future space missions imply higher operating voltage requirements which, in turn, will interact with the space plasma environment. The effects of these interactions can only be inferred because of the limited data base of ground simulations, small test samples, and two space flight experiments. This report evaluates floating potentials for a 100 kW power system operating at 300, 500, 750, and 1000 volts in relation to this data base. Of primary concern is the possibility of discharging to space. The implications of such discharges were studied at the 500 volt operational setting. It was found that discharging can shut down the power system if the discharge current exceeds the array short circuit current. Otherwise, a power oscillation can result that ranges from 2 to 20 percent, depending upon the solar array area involved in the discharge. Means of reducing the effect are discussed.

Stevens, N. J.↗