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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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The growth of a carrier wave propagating through a negative-differential-mobility semiconducting sample is discussed under nonuniform dc bias conditions. A simple analytical expression for the over-all numerical gain is given in terms of current density and of the input and output carrier-wave velocities only. Applications to n-type GaAs are discussed.
Information relevant to the possible occurrence of transverse negative differential conductivity (TNDC) is reviewed. Discussed TNDC aspects include (1) necessary conditions for TNDC occurrence, (2) the role of locations and shapes of energy surfaces in k-space, and (3) crystallographic orientations most favorable to TNDC occurrence.
Discussion of two new techniques used to measure the lattice damage produced in GaAs by the implantation of 60 keV cadmium ions. In the first method, optical reflection spectra of the ion-implanted samples were measured in the wavelength range from 2000 to 4600 A. The decrease in reflectivity resulting from ion-implantation was used to determine the relative amount of lattice damage as a function of ion dose. The second technique employed the scanning electron microscope. Patterns very similar in appearance to Kikuchi electron diffraction patterns are obtained when the secondary and/or backscattered electron intensity is displayed as a function of the angle of incidence of the electron beam on a single crystal surface. The results of measurements made by both methods are compared with each other and with data obtained by the method of measuring lattice damage by Rutherford scattering of 1 MeV helium ions.
It was found that mechanical bending of CdS wafers with the (00.1) orientation causes pronounced changes in the contact potential difference. The changes were of the order of one volt. This effect was attributed to the polarization induced in the depletion layer by the mechanical stress. On this basis a model was developed which accounts for the experimental results.
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Research papers on superconducting interactions and properties and on amorphous materials are presented. The search for new superconductors with improved properties was largely concentrated on the study of properties of thin films. An experimental investigation of interaction mechanisms revealed no new superconductivity mechanism. The properties of high transition temperature, type 2 materials prepared in thin film form were studied. A pulsed field solenoid capable of providing fields in excess of 300 k0e was developed. Preliminary X-ray measurements were made of V3Si to determine the behavior of cell constant deformation versus pressure up to 98 kilobars. The electrical properties of amorphous semiconducting materials and bulk and thin film devices, and of amorphous magnetic materials were investigated for developing radiation hard, inexpensive switches and memory elements.
The development of a hardened silicon power transistor for operation in severe nuclear radiation environments at high temperature was studied. Device hardness and diffusion techniques are discussed along with the geometries of hardened power transistor chips. Engineering drawings of 100 amp and 5 amp silicon devices are included.
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Process of growing expitaxial silicon carbide (SiC) layers on SiC substrates so that epitaxial growth is perpendicular to c-axis by chemical vapor deposition process at temperatures of 1590 to 1660 K minimizes variations in stacking sequence and problems associated with high temperatures.
Information for making high quality ultrasonic wire bonds is presented as well as data to provide a basic understanding of the ultrasonic systems used. The work emphasizes problems and methods of solving them. The required measurement equipment is first introduced. This is followed by procedures and techniques used in setting up a bonding machine, and then various machine- or operator-induced reliability problems are discussed. The characterization of the ultrasonic system and its problems are followed by in-process bonding studies and work on the ultrasonic bonding (welding) mechanism. The report concludes with a discussion of various effects of bond geometry and wire metallurgical characteristics. Where appropriate, the latest, most accurate value of a particular measurement has been substituted for an earlier reported one.
A shielded integrated complimentary MOS transistor structure is described which is used to prevent field inversion in the region not occupied by the gates and which permits the use of a thinner field oxide, reduces the chip area, and has provision for simplified multilayer connections. The structure is used in the design of a static shift register and results in a 20% reduction in area.
The schematic of a multidimensional current pulse generator is studied. A MTKh-90 cold cathode thyratron is used as the current commutator. In the autooscillation mode on a frequency of 380 hertz the generator creates a current to 100 amps per pulse in a control resistance of 1 ohm. The pulse duration is regulated within the limits from 0.1 to 3.0 microseconds.
A transistorized spectrometric amplifier with a shaper is reported that selects the shape of the frequency characteristic of the amplifying channel for which the primary frequency spectrum of the signal will pass, but where the noise spectrum is limited to the maximum. A procedure is presented for selecting the shaping circuits and their inclusion principles.
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