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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 793 records · Page 44
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Charge carrier coupling to the soft phonon mode in a ferroelectric semiconductor

Many crystalline solids possess strongly anharmonic “soft” phonon modes characterized by diminishing frequency as temperature approaches a critical point associated with a symmetry breaking phase transition. While electron–soft phonon coupling can introduce unique scattering channels for charge carriers in ferroelectrics, recent studies on the nonferroelectric lead halide perovskites have also suggested the central role of anharmonic phonons bearing resemblance to soft modes in charge carrier screening. Here we apply coherent phonon spectroscopy to directly study electron coupling to the soft transverse optical phonon mode in a ferroelectric semiconductor SbSI. Photogenerated charge carriers in SbSI are found to be exceptionally long lived and are associated with a transient electro-optical effect that can be explained by interactions between charge carriers and thermally stimulated soft phonon excitations. Furthermore, these results provide strong evidence for the role of electron–soft phonon coupling in the efficient screening of charge carriers and in reducing charge recombination rates, both desirable properties for optoelectronics.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Simple and accurate estimation of metal, semiconductor, and insulator work functions

Work-function Φ measures the work needed for an electron to escape a solid. For simple metals, it is almost exclusively the result of the surface dipole created by spill-out of electrons from bulk into the vacuum as shown in the seminal work by Lang and Kohn [Phys. Rev. B 3, 1215 (1971)] using a jellium model. Despite a half century of intense efforts, however, such understanding has not been extended past metals. Here we present a universal model for Φ which contains a previously unrecognized bulk contribution Φ I [Phys. Rev. Lett. 121, 196802 (2018)]. By incorporating Φ I into the jellium model, we find that it dictates the dipole due to charge spill out and provides a description which applies to a wide range of materials, ranging from metals, semiconductors, to insulators.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Surface termination control of charge transfer and band alignment across a semiconductor–crystalline-oxide heterojunction

Charge redistribution across heterojunctions has long been utilized to induce functional response in materials systems. Here we examine how the composition of the terminating surface affects charge transfer across a heterojunction consisting of Si and the crystalline complex oxide SrTiO 3 . Itinerant electrons in Si migrate across the interface toward the surface of SrTiO 3 due to surface depletion. The electron transfer in turn creates an electric field across the interface that modifies the interfacial dipole associated with bonding between SrTiO 3 and Si. The modification in the dipole leads to a change in band alignment, in which the conduction band of SrTiO 3 moves from being above the valence band of Si in energy, to below it. By capping the SrTiO 3 surface with ultrathin (≤ 1 nm) layers of BaO, SrO or TiO 2 , charge transfer across the interface can be weakened or inhibited. Ab initio modeling implicates the adsorption of oxygen associated with exposure to ambient conditions as driving the surface depletion in SrTiO 3 . In conclusion, the electronic coupling between the surface and buried interface expands the functionality of semiconductor-crystalline oxide heterojunctions.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Light-Induced Reorientation Transition in an Antiferromagnetic Semiconductor

Because of the lack of a net magnetic moment, antiferromagnets possess a unique robustness to external magnetic fields and are thus predicted to play an important role in future magnetic technologies. However, this robustness also makes them quite difficult to control, and the development of novel methods to manipulate these systems with external stimuli is a fundamental goal of antiferromagnetic spintronics. In this work, we report evidence for a metastable reorientation of the order parameter in an antiferromagnetic semiconductor triggered by an ultrafast quench of the equilibrium order via photoexcitation above the band gap. The metastable state forms less than 10 ps after the excitation pulse, and persists for longer than 150 ps before decaying to the ground state via thermal fluctuations. Importantly, this transition cannot be induced thermodynamically, and requires the system to be driven out of equilibrium. Broadly speaking, this phenomenology is ultimately the result of large magnetoelastic coupling in combination with a relatively low symmetry of the magnetic ground state. Since neither of these properties are particularly uncommon in magnetic materials, the observations presented here imply a generic path toward novel device technology enabled by ultrafast dynamics in antiferromagnets.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

A High-Efficiency Isolated PFC AC-DC Topology with Reduced Number of Semiconductor Devices

A new three-level isolated ac-dc power factor correction (PFC) topology with a minimum number of semiconductor devices is the focus of this paper. This topology provides a high input power factor (PF), soft-switching, and higher efficiency than existing isolated ac-dc converters. Furthermore, the proposed circuit has lower voltage rating requirements for the secondary side devices, which leads to a lower total cost and minimizes total converter losses. This article presents a theoretical analysis describing the complete characterization of this new topology, and experimental results on a 1-kW prototype showing high PF and efficiency throughout the operating range.

42 ENGINEERING↗
DOE OSTI2020

Ultrafast UV AlGaN Metal–Semiconductor–Metal Photodetector With a Response Time Below 25 ps

Here, aluminum-gallium-nitride photodetectors were successfully fabricated with micrometer-scale metal–semiconductor–metal structures and tested with ultrafast, UV laser pulses. The measurements were performed with single-shot oscilloscopes. Pulse-broadening effects caused by the measurement system were systematically evaluated and reduced to resolve the intrinsic response time of the detector. The best-performing devices showed a response time of below 25 ps and dark currents below 20 pA. The devices showed linear response with the bias voltage and the laser energy

42 ENGINEERING↗
DOE OSTI2021

Boosting the External Quantum Efficiency of AlGaN-Based Metal–Semiconductor–Metal Ultraviolet Photodiodes by Electrode Geometry Variation

Fast aluminum-gallium-nitride–based metal–semiconductor–metal ultraviolet photodiodes were successfully designed, fabricated, and characterized using conventional photolithography techniques. Various electrode geometries were fabricated to investigate the influence of metal contact shapes on the device performance indices with emphasis on the response speed and bias-voltage–independent efficiency. Furthermore, based on the independently measured Hall mobility and electric field, we evaluated the carrier transit time of the devices as 1.31 ps with bias-voltage–independent external quantum efficiency of 1198% in photoconductive mode at 19.5 V and 70% at 60 V for n -doped and intrinsic devices, respectively.

42 ENGINEERING↗
DOE OSTI2023

Investigation of AlGaN-Delta–GaN-Based UV Photodiodes in a Metal–Semiconductor–Metal Configuration for Efficient and Fast Solar Blind UV Sensing

Metal–semiconductor–metal (MSM) configured UV photodiodes (PD’s) were designed and fabricated on an AlGaN/GaN–based substrate for efficient and ultrafast UV detection. The purpose was to investigate the feasibility of obtaining efficient and ultrafast temporal response from these devices in the UV given the challenges associated with the formation of Schottky contacts on laterally oriented AlGaN/GaN thin films. Two sets of devices were implemented using Pt and Au as metal contacts with 5-µm finger width, 5-µm finger spacing, and a 50-µm x 50-µm active area. Spectral and voltage bias studies were done to establish the spectral profile and the effect of bias voltage on the responsivity of the detectors at 265 nm. Here, the best vertical MSM PD’s produced 0.6-A/W responsivity under 10-V bias voltage at 265 nm. Peak spectral responsivities were recorded as 1.35 A/W and 1.25 A/W at 240 nm for Pt and Au PD’s, respectively.

42 ENGINEERING↗
DOE OSTI2024

Ambipolar Transport in Polycrystalline GeSn Transistors for Complementary Metal-Oxide-Semiconductor Applications

Group-IV alloy GeSn is a promising material for electronic and optoelectronic applications due to its compatibility with both Si substrates and established Si fabrication processes. This study focuses on polycrystalline GeSn (10% Sn), which offers a cost-effective, large-area, and versatile alternative to epitaxial GeSn. We demonstrate ambipolar transport behavior in polycrystalline GeSn thin film transistors, achieving electron and hole field-effect mobilities reaching up to 0.05 cm 2 /Vs and 2.05 cm 2 /Vs, respectively. Through temperature-dependent analysis, we elucidate the underlying mechanism of this phenomenon, which we attribute to quantum tunneling between the Schottky barrier contact and the channel, as well as potential barriers between the grain boundaries of this polycrystalline film, thereby advancing the understanding of polycrystalline GeSn's electrical properties. Furthermore, this work highlights the potential of ambipolar transport as a technique to employ towards the development of GeSn complementary metal-oxide-semiconductor field-effect transistors, promising to simplify and reduce the cost of GeSn manufacturing processes for edge computing and sensing applications.

42 ENGINEERING↗
DOE OSTI2024

High Current Density Diamond Photoconductive Semiconductor Switches With a Buried, Metallic Conductive Channel

Laterally configured diamond photoconductive semiconductor switches (PCSS) with a buried, metallic p+ current channel are reported. Above bandgap ( λ ≤ 226 nm) optical triggering enables responsivity of over 130 mA/W. The use of low-impurity semi-insulating diamond as an active absorption layer enables fast rise and fall times (~2 ns) and on/off ratios greater than 10 11 . The PCSS excited with a laser energy of 20 nJ per pulse passes a high current density (44 A/cm) under a DC bias of 60 V, thanks to the buried metallic p+ current channel. The reported devices promise high current carrying capacity without the need for filamenting while leveraging the excellent optical, electronic, and thermal properties of diamond.

42 ENGINEERING↗
DOE OSTI2026

Bistable Optical Semiconductor Switching Based on C-Doped GaN

Highly resistive gallium nitride (GaN) is an essential material for power optoelectronic applications. While carbon doping is widely used to achieve semi-insulating properties in GaN, the persistent photoconductivity (PPC) arising from deep-level defect traps remains a major obstacle for high-speed power switching. This study demonstrates a novel approach: leveraging the ultrahigh photoresponsivity of GaN:C (up to 2.1 A ⋅ cm/W ⋅ kV, surpassing alternatives such as GaN:Fe) and employing defect-selective optical control to effectively quench the PPC. By synchronizing a short infrared (1064 nm) quenching pulse with UV (385 nm) excitation in an epitaxially grown GaN:C layer on a heavily doped n-type GaN substrate, we achieve a dramatic reduction in photocurrent fall time by approximately 293× (from 470 to 1.6 μ s), increasing modulation bandwidth from 745 Hz to nearly 218 kHz. Here, this advancement not only establishes a new pathway for controlling PPC in GaN:C but also enables the practical integration of GaN:C in fast power switching devices. Enhanced modulation bandwidth, along with GaN:C excellent photoresponsivity, makes it a promising candidate for optically controlled high-voltage, high-power electronic systems, such as photoconductive semiconductor switches (PCSSs) used in pulsed-power drivers, high-power microwave (HPM) sources, and high-voltage gate drivers for wide bandgap (WBG) power electronics.

Carbon-dopped Gallium nitride (GaN:C)↗
DOE OSTI2021

Heterovalent semiconductor structures and devices grown by molecular beam epitaxy

Heterovalent structures consisting of group II-VI/group III-V compound semiconductors offer attractive properties, such as a very broad range of bandgaps, large conduction band offsets, high electron and hole mobilities, and quantum-material properties such as electric-field-induced topological insulator states. These properties and characteristics are highly desirable for many electronic and optoelectronic devices as well as potential condensed-matter quantum-physics applications. Here, we provide an overview of our recent studies of the MBE growth and characterization of zincblende II-VI/III-V heterostructures as well as several novel device applications based on different sets of these materials. By combining materials with small lattice mismatch, such as ZnTe/GaSb (Δa/a~0.13%), CdTe/InSb (Δa/a~0.05%), and ZnSe/GaAs (Δa/a~0.26%), epitaxial films of excellent crystallinity were grown once the growth conditions had been optimized. Cross-sectional observations using conventional and atomic-resolution electron microscopy revealed coherent interfaces and close to defect-free heterostructures. Measurements across CdTe/InSb interfaces indicated a limited amount (~1.5 nm) of chemical intermixing. Results for ZnTe/GaSb distributed Bragg reflectors, CdTe/Mg x Cd 1-x Te double heterostructures, and CdTe/InSb two-color photodetectors are briefly presented, and the growth of a rock salt/zincblende PbTe/CdTe/InSb heterostructure is also described.

Materials Science↗
DOE OSTI2022

Interdigitated electrode geometry variation and external quantum efficiency of GaN/AlGaN-based metal-semiconductor-metal UV photodetectors

Aluminum gallium-nitride (Al x Ga 1–x N)-based metal–semiconductor–metal (MSM) ultraviolet photodetectors photodetectors (PD’s) have been successfully designed and fabricated using conventional photolithography techniques and tested experimentally to study their spectral sensitivity across different Al content, x, with x varying from 0 to 0.3. (Al)GaN-based UV PD’s have wide and tunable direct band gaps. The ability to easily select the photodetected wavelength by simply varying the aluminum content of GaN thin film (Al x Ga 1–x N) is a significant advantage of these group III–V compounds. Typically, MSM PD’s grown on (Al)GaN thin films result in ultrafast photodetection because of their highly mobile carriers. These devices are limited by the carrier transit time due to the negligible capacitance presented by the interdigitated fingers. Various electrode geometries were fabricated to investigate the influence of metal contact shapes on the devices’ performance indices with emphasis on the response speed and bias-voltage–independent efficiency. Here, coupled with the independently measured Hall mobility and electric field, we computed the carrier transit time of the devices to be as short as 1.31 ps and the bias-voltage–independent external quantum efficiencies were as high as 70% at 60 V for n-doped and intrinsic devices when operated in the reverse bias regime. Here, (Al x )Ga 1–x N photodetectors were designed to explore spectral sensitivity by altering x from 0 to 0.3.

42 ENGINEERING↗
DOE OSTI2022

The seeds and homogeneous nucleation of photoinduced nonthermal melting in semiconductors due to self-amplified local dynamic instability

Laser-induced nonthermal melting in semiconductors has been studied over the past four decades, but the underlying mechanism is still under debate. Here, by using an advanced real-time time-dependent density functional theory simulation, we reveal that the photoexcitation-induced ultrafast nonthermal melting in silicon occurs via homogeneous nucleation with random seeds originating from a self-amplified local dynamic instability. Because of this local dynamic instability, any initial small random thermal displacements of atoms can be amplified by a charge transfer of photoexcited carriers, which, in turn, creates a local self-trapping center for the excited carriers and yields the random nucleation seeds. Because a sufficient amount of photoexcited hot carriers must be cooled down to band edges before participating in the self-amplification of local lattice distortions, the time needed for hot carrier cooling is the response for the longer melting time scales at shorter laser wavelengths. This finding provides fresh insights into photoinduced ultrafast nonthermal melting.

42 ENGINEERING↗
DOE OSTI2022

Optically controllable magnetism in atomically thin semiconductors

We report evidence that ferromagnetic order in electrostatically doped, monolayer transition metal dichalcogenide (TMD) semiconductors can be stabilized and controlled at zero magnetic field by local optical pumping. We use circular dichroism (CD) in reflectivity from excitonic states as a spatially resolved probe of charge-carrier spin polarization. At electron densities $n_e$ ~ 10 12 cm -2 , a diffraction-limited, circularly polarized optical pump breaks symmetry between oppositely polarized magnetic states and stabilizes long-range magnetic order, with carrier polarization exceeding 80% over an 8 μm by 5 μm extent. In time-resolved measurements with pulsed optical excitation, we observe that magnetic interactions amplify the initial pump-induced spin polarization by more than an order of magnitude. The optical control of magnetism with local optical pumps will unlock advancements in spin and optical technologies and provides a versatile tool in the study of correlated phases in two-dimensional electron gases.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Three-dimensional nanoscale metal, metal oxide, and semiconductor frameworks through DNA-programmable assembly and templating

Controlling the three-dimensional (3D) nanoarchitecture of inorganic materials is imperative for enabling their novel mechanical, optical, and electronic properties. Here, by exploiting DNA-programmable assembly, we establish a general approach for realizing designed 3D ordered inorganic frameworks. Through inorganic templating of DNA frameworks by liquid- and vapor-phase infiltrations, we demonstrate successful nanofabrication of diverse classes of inorganic frameworks from metal, metal oxide and semiconductor materials, as well as their combinations, including zinc, aluminum, copper, molybdenum, tungsten, indium, tin, and platinum, and composites such as aluminum-doped zinc oxide, indium tin oxide, and platinum/aluminum-doped zinc oxide. The open 3D frameworks have features on the order of nanometers with architecture prescribed by the DNA frames and self-assembled lattice. Structural and spectroscopic studies reveal the composition and organization of diverse inorganic frameworks, as well as the optoelectronic properties of selected materials. The work paves the road toward establishing a 3D nanoscale lithography.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

Inhibited nonradiative decay at all exciton densities in monolayer semiconductors

Most optoelectronic devices operate at high photocarrier densities, where all semiconductors suffer from enhanced nonradiative recombination. Nonradiative processes proportionately reduce photoluminescence (PL) quantum yield (QY), a performance metric that directly dictates the maximum device efficiency. Although transition metal dichalcogenide (TMDC) monolayers exhibit near-unity PL QY at low exciton densities, nonradiative exciton-exciton annihilation (EEA) enhanced by van-Hove singularity (VHS) rapidly degrades their PL QY at high exciton densities and limits their utility in practical applications. Here, by applying small mechanical strain (less than 1%), we circumvented VHS resonance and markedly suppressed EEA in monolayer TMDCs, resulting in near-unity PL QY at all exciton densities despite the presence of a high native defect density. Our findings can enable light-emitting devices that retain high efficiency at all brightness levels.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Kinetic Monte Carlo for semiconductor surface science v.1

SAND2020-14229 O This software builds on an open source Kinetic Monte Carlo library to evaluate the incorporation rate of semiconductor dopant atoms in an Atomic Precision Advanced Manufacturing (APAM) process. Sandia National Laboratories is a multimission laboratory managed and operated by National Technology & Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International Inc., for the U.S. Department of Energy’s National Nuclear Security Administration under contract DE-NA0003525

Campbell, Quinn↗