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At least 793 records · Page 44

All sources NASA NTRS DOE OSTI

DOE OSTI2025

The Solid Electrolyte Interphase Dispersion Can Predict Cycle and Calendar Lifetimes in Silicon Anodes for Lithium-Ion Batteries

The solid electrolyte interphase (SEI) plays a critical role in lithium-ion battery (LIB) anodes. It is responsible for passivating the reactive surface of lithiated anodes against degradation of the electrolyte which enables long cycle and calendar lifetimes for LIBs. This role is especially important in high energy density anodes like silicon, that undergo massive volumetric changes during electrochemical cycling. The mechanism by which the SEI performs this role, however, is not clear which makes designing an SEI to passivate silicon anodes impossible. Through decades of research, dozens of chemical species have been identified within the SEI ranging from inorganic solids to polymeric coatings all of which simultaneously exist in a 'mosaic' composition at the anode surface. This mosaic creates a highly dispersive environment in which electrostatic screening of the anode surface from the electrolyte is not always complete. Here, we present an electrochemical technique to directly test the dispersion at the anode surface. We use this technique to screen more than 20 different electrolytes against silicon anodes and find correlations between both the cycle life and calendar life. The insights from this study offer a new framework to think about the SEI and a rapid screening method to test novel electrode/electrolyte combinations.

battery↗

DOE OSTI2021

Prediction of Leakage Current and Depletion Voltage in Silicon Detectors Under Extraterrestrial Radiation Conditions

Silicon detection is a mature technology for registering the passage of charged particles. At the same time it continues to evolve toward increasing radiation tolerance as well as precision and adaptability. For these reasons it is likely to remain a critical element of detection of systems associated with extraterrestrial exploration. Silicon sensor leakage current and depletion voltage depend on the integrated fluence received by the sensor and on its thermal history during and after the irradiation process. For minimal assumptions on shielding and hence on the particle energy spectrum, and using published data on Martian ground temperature, we predict the leakage current density and the depletion voltage, as a function of time, of silicon sensors in transit to and deployed continuously on the Mars surface for a duration of up to 28 Earth-years, for several sensor geometries and a worst-case temperature scenario.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

DOE OSTI2024

Impacts of Curing-Induced Phase Segregation in Silicon Nanoparticle-Based Electrodes

We report the investigation of silicon nanoparticle composite anodes for Li-ion batteries, using a combination of two nm-scale atomic force microscopy-based techniques: scanning spreading resistance microscopy for electrical conduction mapping and contact resonance and force volume for elastic modulus mapping, along with scanning electron microscopy-based energy dispersion spectroscopy, nanoindentation, and electrochemical analysis. Thermally curing the composite anode—made of polyethylene oxide-treated Si nanoparticles, carbon black, and polyimide binder—reportedly improves the anode electrochemical performance significantly. This work demonstrates phase segregation resulting from thermal curing, where alternating bands of carbon and silicon active material are observed. This electrode morphology is retained after extensive cycling, where the electrical conduction of the carbon-rich bands remains relatively unchanged, but the mechanical modulus of the bands decreases distinctly. These electrical and mechanical factors may contribute to performance improvement, with carbon bands serving as a mechanical buffer for Si deformation and providing electrical conduction pathways. This work motivates future efforts to engineer similar morphologies for mitigating capacity loss in silicon electrodes.

25 ENERGY STORAGE↗

DOE OSTI2023

LGAD-Based Silicon Sensors for 4D Detectors

Low-Gain Avalanche Diodes (LGAD) are a class of silicon sensors developed for the fast detection of Minimum Ionizing Particles (MIPs). The development was motivated by the need of resolving piled-up tracks of charged particles emerging from several vertexes originating from the same bunch-crossing in High-Energy Physics (HEP) collider experiments, which, however, are separated not only in space but also in time by a few tens of picoseconds. Built on thin silicon substrates and featuring an internal moderate gain, they provide fast signals for excellent timing performance, which are therefore useful to distinguish the different tracks. Unfortunately, this comes at the price of poor spatial resolution. To overcome this limitation, other families of LGAD-based silicon sensors which can deliver in the same substrate both excellent timing and spatial information are under development. Such devices are, to name a few, capacitively coupled LGADs (AC-LGAD), deep-junction LGADs (DJ-LGAD) and trench-isolated LGADs (TI-LGADs). These devices can be fabricated by even small-scale research-focused clean rooms for faster development within the scientific community. However, to scale up production, efforts towards integrating these sensor concepts in CMOS substrates, with the obvious advantage of the possibility of integrating part of the read-out electronics in the same substrate, have begun.

spatial resolution↗

NASA NTRS2005

Ultra-Low-Temperature Homoepitaxial Growth of Sb-Doped Silicon

An ultra-low-temperature process for homoepitaxial growth of high-quality, surface-confined, Sb-doped silicon layers is presented. Non-equilibrium growth by molecular beam epitaxy (MBE) is used to achieve dopant incorporation in excess of 2x10(exp 14) per sq cm in a thin, surface-confined layer. Sb surface segregation larger than expected from theoretical models was observed, in agreement with other experimental works. Furthermore, this work details an entirely low-temperature process (less than 450 degree C) that can be applied to fully processed and aluminum-metallized silicon devices. One application of this process is the formation of a back-surface electrode for back-illuminated high-purity silicon imaging arrays.

Molecular beam epitaxy↗

NASA NTRS2016

Progress on the Fabrication of High Resolution and Lightweight Monocrystalline Silicon X-ray Mirrors

Monocrystalline silicon is an excellent X-ray mirror substrate material due to its high stiffness, low density, high thermal conductivity, zero internal stress, and commercial availability. Our work at NASA Goddard Space Flight Center focuses on identifying and developing a manufacturing process to produce high resolution and lightweight X-ray mirror segments in a cost and time effective manner. Previous efforts focused on demonstrating the feasibility of cylindrical silicon mirror polishing and lightweighting. Present efforts are aimed towards producing true paraboloidal and hyperboloidal mirror surfaces on the lightweight silicon segments. This paper presents results from these recent investigations, including a mirror which features a surface quality sufficient for a 3 arcsecond telescope.

X-ray optics↗

NASA NTRS2020

Progress of Coating Stress Compensation of Silicon Mirrors for Lynx X-ray Telescope Mission Concept Using Thermal Oxide Patterning Method

A thermal oxide patterning method has proven to be effective for correcting coating-stress-induced distortion on flat silicon wafers. We report progress on developing this method for correcting curved silicon mirrors distorted by front-side iridium coatings. Owing to the difference in geometry, a finite element model has been established to calculate the appropriate duty cycle maps in thermal oxide hexagon patterns used for compensation. In addition, a photolithographic process, along with three-dimensional printed equipment, has been developed for creating patterns precisely on the back side of curved mirrors. The developed method has been used to recover the original surface shape of two silicon mirrors which are 100-mm long, 0.5-mm thick, having 312-mm radius of curvature, and 30 deg in azimuthal span (Wolter-I geometry). These mirrors’ front sides are sputter-coated by 20-nm iridium layers with ∼-70 N∕m integrated stress. Measurement results show that the developed method can mitigate coating-induced distortion by a factor of ∼5 in RMS height and ∼4 in RMS slope error, corresponding to ∼0.5 arc sec RMS slope error. Residual errors after correction are dominated by midfrequency ripples created during the annealing process, which will be resolved in the future. The presented method is precise and inexpensive and a potential candidate for resolving the coating stress issue for Lynx optics in the future.

x-ray↗

NASA NTRS2019

The Bidirectional Reflectance of Black Silicon Used in Space and Earth Remote Sensing Applications

Space-based astrophysical and remote sensing observations often require the detection and measurement of light originating from distant and relatively faint objects. These observations are highly susceptible to scattered light which may introduce imaging artifacts, obscure object details, and increase measurement noise. This paper describes the initial work of characterizing representative black materials used in coronagraph instruments and other spaceborne instruments. Measurements of “blackness” and the achieved reflectance of black silicon are provided in the spectral range from 400nm to 2500nm using 8o directional hemispherical measurements. The bidirectional reflectance of black silicon was also measured at discrete wavelengths, 633nm, and 1064nm, using the optical scatterometer located at NASA Goddard Space Flight Center’s Diffuser Calibration Laboratory (DCL). A 100mm diameter black silicon sample was fabricated and optically characterized. The BRDF of other well-known black materials such as Z306 and Fractal Black are also presented and discussed.

BRDF↗

NASA NTRSDate not supplied

Evaluation of Silicon Carbide Pressure Sensor in Turbofan Engine Core Exhaust Nozzle

We report the results of the evaluation of single crystal 4H-silicon carbide piezoresistive pressure sensors that were directly inserted at the compressor and core exhaust nozzle exits, in shear contact with the engine-internal flow streams of the NASA DGEN Aeropropulsion Research Turbofan, where the operating temperatures at maximum power were ~230 oC, and ~460 oC, respectively. In addition to demonstrating sensor survivability during this maiden test, the frequency responses of the silicon-carbide sensors at the core-nozzle exit were compared against industry-standard silicon-based piezoresistive pressure transducers that externally placed, using an infinite-tube-probe arrangement. The low-voltage output of these early-development SiC sensors limited the frequency range with an acceptable signal-to-noise-ratio for the current application to less than about 2,500 Hz. The low output of the SiC sensors were due to a conservative burst-pressure diaphragm design that can be optimized to increase the frequency range. The results from this initial campaign offered insights to aspects of the sensor that would require further improvement, with the goal of achieving full-bandwidth capture of engine unsteady pressure fluctuations by direct interrogation of the flow field in hostile-environment engine-core components.

Silicon Carbide↗

DOE OSTI2020

High Efficiency Silicon Module Degradation - From Atoms to Systems: Preprint

For PV to be cost competitive with traditional energy sources reliability is of critical importance. Historically, PV reliability has focused on the module packaging because degradation and failure modes were directly linked to the packaging. Today, in addition to module packaging cell related reliability issues can be observed. We show that silicon heterojunction (SHJ) degradation is directly linked to the re-distribution of hydrogen (H) near the interface between the amorphous-silicon (a-Si) and silicon bulk. PERC modules show a similar decline in carrier lifetime indicating that not the packaging but the cells are also changing during field exposure. Examination of a stressed PERC cell showed a similar H redistribution in the cell. Understanding the degradation mechanism at the atomic level is important in facilitating possible mitigating mechanisms and more accurately projecting performance.

degradation↗

DOE OSTI2020

Evaluations of Silicon Carbide Temperature Monitors

The effect of irradiation on materials properties is an important field of study for materials usage in both fission and fusion systems for energy production. Neutron flux and energy spectrums are well understood; however, the irradiation temperature can be more difficult to determine. Since the early 1960s, Silicon Carbide (SiC) has been used as a passive post-irradiation temperature monitor because the irradiation defects anneal out above the irradiation temperature. Irradiation temperature is determined by measuring a property change after isochronal annealing or during a continuously monitored annealing process. There are many properties that may be measured including electrical resistivity, bulk density, dimensions, thermal diffusivity, or lattice spacing. Electrical resistivity is accepted as a robust measurement technique; however, such method is time-consuming since the steps involved must be performed in a serial manner. The use of thermal expansion from continuous dilatometry is an automated process requiring minimal setup time. As part of a Nuclear Science User Facilities (NSUF) project, low dose silicon carbide monitors were irradiated in the BR2 material test reactor at SCK, Belgium, and were then evaluated at the Idaho National Laboratory (INL) High Temperature Test Laboratory (HTTL) to determine their peak temperature achieved during irradiation. The technical significance of this work was that the monitors were irradiated to a dose that was significantly less than recommended in published literature. This paper will discuss the evaluation processes available at HTTL and the performance of the low dose silicon carbide temperature monitors.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2024

Electrically Controlled All-Antiferromagnetic Tunnel Junctions on Silicon with Large Room-Temperature Magnetoresistance

Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous electrical writing and reading of information, which are also compatible with established silicon-based manufacturing. Recent experiments have shown tunneling magnetoresistance (TMR) readout in epitaxial AFM tunnel junctions. However, these TMR structures are not grown using a silicon-compatible deposition process, and controlling their AFM order required external magnetic fields. Here are shown three-terminal AFM tunnel junctions based on the noncollinear antiferromagnet PtMn 3 , sputter-deposited on silicon. The devices simultaneously exhibit electrical switching using electric currents, and electrical readout by a large room-temperature TMR effect. First-principles calculations explain the TMR in terms of the momentum-resolved spin-dependent tunneling conduction in tunnel junctions with noncollinear AFM electrodes.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Pushing the Limits: Maximizing Energy Density in Silicon Sulfide Solid‐State Batteries

Here, for the first time, we demonstrate a silicon solid-state battery (SSB) architecture that achieves >400 Wh kg −1 , approaching the theoretical limit for silicon-based SSBs. This configuration features a 99.9 wt% micro-Si, a thin sulfide solid electrolyte (SSE), and a high-loading NMC811. Key to these results is strategically selecting and evaluating the processing techniques, whether wet or dry, for the negative electrode, positive electrode and thin sheet-type SSE. Excessive lithium incorporation into the silicon host, beyond the Li 3.75 +Si phase to form a LiSi composite, is essential to match the high capacity of the positive electrode. This SSB achieves over 1000 cycles for a 2 mAh cm −2 with ≈80% capacity retention and 94% capacity retention for 3 mAh cm −2 over 500 cycles at 25 °C. Post analysis identifies the primary capacity decay mechanisms as oxidation at the NMC/SSE interface and structural disruptions within NMC. Meanwhile, the Si electrode maintains a robust solid-electrolyte interphase layer, minimizing capacity decay. This study highlights the necessity for improved NMC coatings, lattice oxygen stabilization, and a durable positive electrode-electrolyte interface to improve the long-term stability of SSBs. Strategies leading to a single-layer pouch cell SSB exceeding 400 Wh kg −1 are developed.

25 ENERGY STORAGE↗

DOE OSTI2022

Digital and Gradient Refractive Index Planar Optics by Nanoimprinting Mesoporous Silicon

We report the realization of digital and gradient index flat-optics and planar waveguides using the ‘nanoimprinting refractive index’ (NIRI) technique applied to mesoporous silicon. This technique combines the distinct optical and mechanical metamaterial qualities of mesoporous silicon, including its widely tunable effective refractive index and ability to undergo plastic deformation with a near zero Poisson ratio. Nanoimprinting with premastered and reusable stamps containing analog or digital features enables the continuous or discontinuous patterning of refractive index with high contrast Δn ≥ 0.8 and subwavelength resolution. Using NIRI we experimentally demonstrate a wavefront shaping flat microlens array operating in the visible (405–635 nm) and mesoporous silicon and silica waveguides operating near 1310 nm. This study demonstrates the viability of patterning arbitrary refractive index distributions, n(x,y), on the surface of a chip while circumventing the challenges and limitations of top-down lithographic techniques – thus opening a low-cost and scalable approach for the realization of advanced planar optical technologies.

36 MATERIALS SCIENCE↗

DOE OSTI2024

First Principles Study of Aluminum Doped Polycrystalline Silicon as a Potential Anode Candidate in Li‐ion Batteries

Addressing sustainable energy storage remains crucial for transitioning to renewable sources. While Li‐ion batteries have made significant contributions, enhancing their capacity through alternative materials remains a key challenge. Micro‐sized silicon is a promising anode material due to its tenfold higher theoretical capacity compared to conventional graphite. However, its substantial volumetric expansion during cycling impedes practical application due to mechanical failure and rapid capacity fading. A novel approach is proposed to mitigate this issue by incorporating trace amounts of aluminum into the micro‐sized silicon electrode using ball milling. Density functional theory (DFT) is employed to establish a theoretical framework elucidating how grain boundary sliding, a key mechanism involved in preventing mechanical failure is facilitated by the presence of trace aluminum at grain boundaries. This, in turn, reduces stress accumulation within the material, reducing the likelihood of failure. To validate the theoretical predictions, capacity retention experiments are conducted on undoped and Al‐doped micro‐sized silicon samples. In conclusion, the results demonstrate significantly reduced capacity fading in the doped sample, corroborating the theoretical framework and showcasing the potential of aluminum doping for improved Li‐ion battery performance.

25 ENERGY STORAGE↗

DOE OSTI2020

Highly Ordered Carbon Coating Prepared with Polyvinylidene Chloride Precursor for High‐Performance Silicon Anodes in Lithium‐Ion Batteries

Abstract A highly ordered carbon structure based on polyvinylidene chloride precursor has been developed to host silicon nanoparticles. The stoichiometric ratio of sacrificial H and Cl elements facilitated full utilization of the carbon content of the precursor that produced robust carbon coatings on silicon nanoparticles with excellent mechanic properties and electrochemical stabilities. The optimal sintering temperature and carbon content have been investigated. When evaluated as the anode of a lithium‐ion battery (LIB), the Si : C 1 : 2 composite sintered at 800 °C (SiC12‐800) provided excellent capacity retention of 85 % at 0.1 C after 50 cycles with an enhanced CE, which reached 99 % only after 10 cycles. The SiC12‐800 electrode maintained a specific capacity of 709.2 mAh/g after 300 cycles at 0.3 C, and delivered a high rate performance of 737.9 mAh/g and 485.6 mAh/g at 5 C and 10 C, respectively. The results indicate that polymer precursors with stoichiometric ratio of sacrificial elements have high potential for generating highly robust carbon coatings for silicon anodes in high energy density LIBs.

Zhou, Shuo↗

DOE OSTI2020

Ending the Chase for a Perfect Binder: Role of Surface Chemistry Variation and its Influence on Silicon Anodes

In this work we examine the influence of the type of silicon source material (two milled and two plasma enhanced chemical vapor deposition) on the electrochemical performance of silicon-based anodes for Li-ion batteries. The four representative Si sources were previously identified in literature but have never been compared side by side, which is critical to understanding the wide variation in performance reported for silicon-based electrodes. These particles display unique surface features associated with surface oxides and residual precursor species (Si-N, Si-C, Si-H) which impact processability by changing interactions within the electrode slurry and the resulting electrochemical performance. These properties should be taken into consideration when utilizing “off-the-shelf” Si powders for investigations and would be good variables to explore to understand why certain chemistries display suitable performance, while others “don't work.”

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2022

UV‐induced degradation of high‐efficiency silicon PV modules with different cell architectures

Abstract Degradation from ultraviolet (UV) radiation has become prevalent in the front of solar cells due to the introduction of UV‐transmitting encapsulants in photovoltaic (PV) module construction. Here, we examine UV‐induced degradation (UVID) in various commercial, unencapsulated crystalline silicon cell technologies, including bifacial silicon heterojunction (HJ), interdigitated back contact (IBC), passivated emitter and rear contact (PERC), and passivated emitter rear totally diffused (PERT) solar cells. We performed UV exposure tests using UVA‐340 fluorescent lamps at 1.24 W·m −2 (at 340 nm) and 45°C through 4.02 MJ·m −2 (2000 h). Our results showed that modern cell architectures are more vulnerable to UVID, leading to a significant power decrease (−3.6% on average; −11.8% maximum) compared with the conventional aluminum back surface field (Al‐BSF) cells (<−1% on average). The power degradation is largely caused by the decrease in short‐circuit current and open‐circuit voltage. A greater power decrease is observed in bifacial cells with rear‐side exposure compared with those with front‐side exposure, indicating that the rear side is more susceptible to UV damage. Secondary ion mass spectroscopy (SIMS) confirmed an increase in hydrogen concentration near the Si/passivation interface in HJ and IBC cells after UV exposure; the excess of hydrogen could result in hydrogen‐induced degradation and subsequently cause higher recombination losses. Additionally, surface oxidation and hot‐carrier damage were identified in PERT cells. Using a spectral‐based analysis, we obtained an acceleration factor of 5× between unpackaged cells (containing a silicon nitride antireflective coating on the front) in the UV test and an encapsulated module (with the front glass and encapsulant blocking 90% of the UV at 294 nm and 353 nm, respectively) in outdoor conditions. From the analytical calculations, we show that a UV‐blocking encapsulant can reduce UV transmission in the module by an additional factor of ~50.

14 SOLAR ENERGY↗