Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Multilayer”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 793 records · Page 44

'Water window' sources: Selection based on the interplay of spectral properties and multilayer reflection bandwidth

Development of laser-produced plasma 'water window' sources poses a major challenge in x-ray research and most effort has focused on line sources for use with zone plate optics. Here, a comparison of carbon and nitrogen line emission with that from both 3d - 4f and 4d - 4f unresolved transition arrays shows that, at power densities available from 'table-top' solid-state lasers, 3d - 4f emission from zirconium plasmas is most intense, and calculations show that in an imaging system based on multilayer mirrors, for reflectance bandwidths >1% has superior performance than either line or broader-band sources. For bandwidths <1%, line sources are preferable.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

High resolution TOF - SIMS depth profiling of nano-film multilayers

We present the results of depth profiling studies conducted using an indigenously developed dual-beam high resolution Time-of-Flight Secondary Ion Mass Spectrometer (TOF-SIMS) on thinfilm W-C-W multilayer structure grown on Si substrate. Opto 8 layers could be clearly identified. Mixing of layers is seen which from analysis using roughness model calculations indicate a mixing thickness of about 2nm that correspond to the escape depth of secondary ions from the sample.

36 MATERIALS SCIENCE↗

Nanorods of Co/Pd multilayers fabricated by glancing angle deposition for advanced media

Perpendicular anisotropy magnetic nanorods composed of Co/Pd multilayers have been successfully fabricated by glancing angle deposition (GLAD) in a planetary sputtering system. Co and Pd layer thickness, ratio, and bilayer number were optimized for both normal and GLAD depositions. Scanning electron micrographs estimated the nanorods to be about 12 nm in diameter. M-H loops showed that the coercivity for the GLAD nanorods increased from 1.3 kOe for the normally deposited continuous films to 2.9 kOe for the GLAD nanorod array, a 123% increase.

36 MATERIALS SCIENCE↗

Damage of multilayer optics with varying capping layers induced by focused extreme ultraviolet beam

Extreme ultraviolet Mo/Si multilayers protected by capping layers of different materials were exposed to 13.5 nm plasma source radiation generated with a table-top laser to study the irradiation damage mechanism. Morphology of single-shot damaged areas has been analyzed by means of atomic force microscopy. Threshold fluences were evaluated for each type of sample in order to determine the capability of the capping layer to protect the structure underneath.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Fatigue and failure responses of lead zirconate titanate multilayer actuator under unipolar high-field electric cycling

Lead zirconate titanate (PZT) multilayer actuators with an interdigital electrode design were studied under high electric fields (3 and 6 kV/mm) in a unipolar cycling mode. A 100 Hz sine wave was used in cycling. Five specimens tested under 6 kV/mm failed from 3.8 10^5 to 7 10^5 cycles, whereas three other specimens tested under 3 kV/mm were found to be still functional after 10^8 cycles. Variations in piezoelectric and dielectric responses of the tested specimens were observed during the fatigue test, depending on the measuring and cycling conditions. Selected fatigued and damaged actuators were characterized using an impedance analyzer or small signal measurement. A scanning acoustic microscope also was employed as a nondestructive tool to detect the presence of defects. Failed plates were subsequently sectioned, and the extensive cracks and porous regions were observed to be across the PZT layers. The results from this study have demonstrated that the high-field cycling can accelerate the fatigue of PZT stacks as long as the partial discharge is controlled. The small signal measurement can also be integrated into the large signal measurement to characterize the fatigue response of PZT stacks in a more comprehensive basis. The former can further serve as an experimental method to monitor the behavior of PZT stacks.

Zeng, Fan W↗

Ion effects in hydrogen-induced blistering of Mo/Si multilayers

The role that energetic (>800 eV) hydrogen ions play in inducing and modifying the formation of blisters in nanoscale Mo/Si multilayer samples is investigated. Such samples are confirmed to be susceptible to blistering by two separate mechanisms. The first is attributed to the segregation of H atoms to voids and vacancies associated with the outermost Mo layer, driving blister formation in the form of H{sub 2} filled bubbles. This process can occur in the absence of ions. A second blister distribution emerges when energetic ions are present in the irradiating flux. This is attributed to an ion-induced vacancy clustering mechanism that produces void blisters. The defects and strained states associated with the Mo-on-Si interfaces provide the preferred nucleation points for blistering in both cases. The effects of ions are ascribed to promotion of hydrogen uptake and mobility, in particular through the Si layers; to the generation of additional mobile species in the Si and Mo layers; and to the creation of new blister nucleation points. In addition to directly stimulating blistering via vacancy clustering, ions modify the development of H{sub 2}-filled blisters. This is most evident in the formation of multi-component structures due to overlapping delaminations at different layer interfaces. This affect is attributed to the introduction of active transport of hydrogen from the H{sub 2} filled blisters across the outermost Mo-on-Si interface to the underlying layers. Ion-induced variations in hydrogen uptake and distribution and in the rates of blister nucleation and growth produce lateral differences in blister size and areal number density that create a macroscopic concentric pattern across the surface.

36 MATERIALS SCIENCE↗

Effects of Co layer thickness and annealing temperature on the magnetic properties of inverted [Pt/Co] multilayers

The effects of Co layer thickness and annealing temperature on the perpendicular magnetic anisotropy (PMA) properties of inverted [Pt (0.2 nm)/Co (t{sub Co})]{sub 6} multilayers (where t{sub Co} indicates the thickness of the Co layer) have been investigated. The cross-sectional microstructure, as observed from the high-resolution transmission electron microscope images, shows a clear layered structure with atomically flat interfaces both in the as-deposited state as well as after annealing, indicating the interface effects for PMA. The effective PMA energy density (K{sub eff}) increases significantly with an increase in t{sub Co} from 0.2 to 0.28 nm and then becomes almost saturated with further increases in t{sub Co}, followed by a slight reduction at the highest Co thickness, t{sub Co} = 0.6 nm. In order to explain the t{sub Co} dependence on K{sub eff}, the intrinsic PMA energy density (K{sub i}) is calculated by additionally measuring a similar set of results for the saturation magnetization. The K{sub i} value increases nearly linearly with the increase in t{sub Co} from 0.2 to 0.5 nm, followed by saturation at a higher t{sub Co} value of 0.6 nm. Owing to a close relationship between K{sub i} and the quality of the interfaces, these results indicate a similar t{sub Co} dependence on the quality of the interfaces. This is further supported from the magnetic measurements of the samples annealed at the highest temperature of 500 °C, where a second phase is formed, which show a similar t{sub Co} dependence on the amount of the second phase. The K{sub i} value is nearly independent of the annealing temperature at t{sub Co} ≤ 0.4 nm, above which a substantial reduction is observed, when the annealing temperature exceeds 500 °C.

36 MATERIALS SCIENCE↗

Polymer/metal hybrid multilayers modified Schottky devices

Insulating, polymethylmethacrylate (PMMA), and semiconducting, poly(3-hexylthiophene) (P3HT), nanometer thick polymers/Au nanoparticles based hybrid multilayers (HyMLs) were fabricated on p-Si single-crystal substrate. An iterative method, which involves, respectively, spin-coating (PMMA and P3HT deposition) and sputtering (Au nanoparticles deposition) techniques to prepare Au/HyMLs/p-Si Schottky device, was used. The barrier height and the ideality factor of the Au/HyMLs/p-Si Schottky devices were investigated by current-voltage measurements in the thickness range of 1–5 bilayers. It was observed that the barrier height of such hybrid layered systems can be tuned as a function of bilayers number and its evolution was quantified and analyzed.

36 MATERIALS SCIENCE↗

Periodically multilayered planar optical concentrator for photovoltaic solar cells

A planar optical concentrator comprising a periodic multilayered isotropic dielectric material backed by a metallic surface-relief grating was theoretically examined for silicon photovoltaics. The concentrator was optimized using a differential evolution algorithm for solar-spectrum-integrated power-flux density. Further optimization was carried out for tolerance to variations in the incidence angle, spatial dimensions, and dielectric properties. The average electron-hole pair density in a silicon solar cell can be doubled, and the material costs substantially diminished by this concentrator, whose efficacy is due to the excitation of waveguide modes and multiple surface-plasmon-polariton waves in a broad spectral regime.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Structure of multilayered Cr(Al)N/SiO{sub x} nanocomposite coatings fabricated by differential pumping co-sputtering

A Cr(Al)N/38 vol. % SiO{sub x} hard coating was prepared on a (001) Si substrate at 250 °C in a differential pumping co-sputtering system, which has two chambers for radio frequency (RF) sputtering and a substrate holder rotating on the chambers. The composite coating was grown by alternate sputter-depositions from CrAl and SiO{sub 2} targets with flows of N{sub 2}+Ar and Ar at RF powers of 200 and 75 W, respectively, on transition layers grown on the substrate. Analytical electron microscopy reveled that the Cr(Al)N/SiO{sub x} coating had a multilayered structure of Cr(Al)N crystal layers ∼1.6 nm thick and two-dimensionally dispersed amorphous silicon oxide (a-SiO{sub x}) particles with sizes of ∼1 nm or less. The a-SiO{sub x} particles were enclosed with the Cr(Al)N layers. The coating had a low indentation hardness of ∼25 GPa at room temperature, due to a high oxide fraction of 38 vol. % and a low substrate rotational speed of 1 rpm. Faster rotation and lower oxide fraction would make a-SiO{sub x} particles smaller, resulting in the formation of Cr(Al)N crystal including the very fine a-SiO{sub x} particles with small number density. They would work as obstacles for the lattice deformation of the Cr(Al)N crystals. We have fabricated a superhard coating of Cr(Al)N/17 vol. % SiO{sub x} with a hardness of 46 GPa prepared at 12 rpm.

36 MATERIALS SCIENCE↗

Self-organization during growth of ZrN/SiN{sub x} multilayers by epitaxial lateral overgrowth

ZrN/SiN{sub x} nanoscale multilayers were deposited on ZrN seed layers grown on top of MgO(001) substrates by dc magnetron sputtering with a constant ZrN thickness of 40 Å and with an intended SiN{sub x} thickness of 2, 4, 6, 8, and 15 Å at a substrate temperature of 800 °C and 6 Å at 500 °C. The films were investigated by X-ray diffraction, high-resolution scanning transmission electron microscopy, and energy dispersive X-ray spectroscopy. The investigations show that the SiN{sub x} is amorphous and that the ZrN layers are crystalline. Growth of epitaxial cubic SiN{sub x}—known to take place on TiN(001)—on ZrN(001) is excluded to the monolayer resolution of this study. During the course of SiN{sub x} deposition, the material segregates to form surface precipitates in discontinuous layers for SiN{sub x} thicknesses ≤6 Å that coalesce into continuous layers for 8 and 15 Å thickness at 800 °C, and for 6 Å at 500 °C. The SiN{sub x} precipitates are aligned vertically. The ZrN layers in turn grow by epitaxial lateral overgrowth on the discontinuous SiN{sub x} in samples deposited at 800 °C with up to 6 Å thick SiN{sub x} layers. Effectively a self-organized nanostructure can be grown consisting of strings of 1–3 nm large SiN{sub x} precipitates along apparent column boundaries in the epitaxial ZrN.

36 MATERIALS SCIENCE↗

Quantum Hall effect in graphene decorated with disordered multilayer patches

Quantum Hall effect (QHE) is observed in graphene grown by chemical vapour deposition using platinum catalyst. The QHE is even seen in samples which are irregularly decorated with disordered multilayer graphene patches and have very low mobility (<500 cm{sup 2}V{sup −1}s{sup −1}). The effect does not seem to depend on electronic mobility and uniformity of the resulting material, which indicates the robustness of QHE in graphene.

36 MATERIALS SCIENCE↗

Structural, optical and magnetic properties of ZnOFe/ZnO multilayers

ZnOFe/ZnO multilayers (MLs) with the constant composition and the different thickness in ZnOFe layers have been prepared by helicon plasma sputtering. The XRD patterns of ZnOFe/ZnO MLs before annealing showed only ZnO diffraction peaks while one after annealing indicated the phases of ZnO and ZnFe{sub 2}O{sub 4}. The magnetization curves of ZnOFe/ZnO MLs before and after annealing showed ferromagnetic behavior. The origin of ferromagnetism in ZnOFe/ZnO MLs before annealing is considered to be due to the formation of defects/vacancies resulting from the substitution of Fe{sup 3+} ions for Zn{sub 2+} ions in ZnOFe layers irrespective of the mixed Fe valence states seen in XANES spectra. The ferromagnetic behavior after annealing is due to the formation of ZnFe{sub 2}O{sub 4}, which was confirmed by XRD, XPS, RBS measurements.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Phase transformations, heat evolution, and atomic diffusion during slow heating of Al-rich Al/Zr multilayered foils

We describe the energy and sequence of phase transformations in multilayered Al/Zr foils with atomic ratios of 3 Al:1 Zr during low temperature (<350 °C) heat treatments in a differential scanning calorimeter. The initial phase formed is an Al-rich amorphous phase that appears to grow by Zr diffusion through the amorphous phase. The subsequent nucleation and growth of tetragonal Al{sub 3}Zr along the Al/amorphous layer interface is mediated by Al diffusion through the crystalline intermetallic phase. Diffusion coefficients associated with these processes are higher than expected from reports of diffusivities measured at higher temperatures. The inferred heat of formation of the tetragonal Al{sub 3}Zr phase is 1240 ± 40 J/g (53 ± 2 kJ/mol atom). No anomalous variation in the energy or sequence of phase transformations is found with bilayer thickness for samples with bilayer thickness in the range of 17 nm to 90 nm despite anomalies in the bilayer dependence of self-propagating reaction velocities in the same foils.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Highly uniform bipolar resistive switching characteristics in TiO{sub 2}/BaTiO{sub 3}/TiO{sub 2} multilayer

Nanoscale multilayer structure TiO{sub 2}/BaTiO{sub 3}/TiO{sub 2} has been fabricated on Pt/Ti/SiO{sub 2}/Si substrate by chemical solution deposition method. Highly uniform bipolar resistive switching (BRS) characteristics have been observed in Pt/TiO{sub 2}/BaTiO{sub 3}/TiO{sub 2}/Pt cells. Analysis of the current-voltage relationship demonstrates that the space-charge-limited current conduction controlled by the localized oxygen vacancies should be important to the resistive switching behavior. X-ray photoelectron spectroscopy results indicated that oxygen vacancies in TiO{sub 2} play a crucial role in the resistive switching phenomenon and the introduced TiO{sub 2}/BaTiO{sub 3} interfaces result in the high uniformity of bipolar resistive switching characteristics.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Effect of graphite oxide solution concentration on the properties of multilayer graphene

This paper reports the influence of graphite oxide (GO) solution concentration on the optical and electrical properties of multilayer graphene (MLG) films. Graphene oxide (GrO) films were deposited on the glass substrates by spin coating aqueous solutions of GO with different concentrations (7, 8, 9, 10 and 11 mg/ml). The GrO films were then thermally reduced at temperature of 500°C in argon flow for half an hour to form MLG films. Both the transmittance and sheet resistance decreased with the GO concentration from 8 mg/ml to 9 mg/ml, possibly due to thicker and uniform coverage of MLG over the substrate. However, the transmittance and sheet resistance increased rapidly as the GO concentration reached 11 mg/ml, which can be attributed to poor film quality. The MLG film obtained at concentration of 10 mg/ml showed the highest transmittance/sheet resistance ratio with 69 % transmittance and sheet resistance of 292 ± 63 kΩ/sq. The optimum MLG film was utilized as counter electrode in dye sensitized solar cells based on ZnO nanorods.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Electric field induced modification of magnetic properties in Co{sub 2}Si{sub 2} multilayers

Effects of an external electric field on the magnetization and magnetocrystalline anisotropy (MA) in Co{sub 2}Si{sub 2} multilayers are investigated by first-principles calculations. The results demonstrate that, due to the hybridization between the Si-2p orbitals and the Co-3d orbitals, the magnetic moment of the Co{sub 2}Si{sub 2} supercell changes non-linearly with external electric field and the behavior of band structures near the Fermi energy could be explained within near-rigid-band model. Moreover, spin-polarized charge redistribution leads to spin reorientation and the MA is not proportional to the orbital moment anisotropy under the external electric field.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Temperature dependence of ion-beam mixing in crystalline and amorphous germanium isotope multilayer structures

Self-atom mixing induced by 310 keV gallium (Ga) ion implantation in crystalline and preamorphized germanium (Ge) at temperatures between 164 K and 623 K and a dose of 1 × 10{sup 15} cm{sup −2} is investigated using isotopic multilayer structures of alternating {sup 70}Ge and {sup nat}Ge layers grown by molecular beam epitaxy. The distribution of the implanted Ga atoms and the ion-beam induced depth-dependent self-atom mixing was determined by means of secondary ion mass spectrometry. Three different temperature regimes of self-atom mixing, i.e., low-, intermediate-, and high-temperature regimes are observed. At temperatures up to 423 K, the mixing is independent of the initial structure, whereas at 523 K, the intermixing of the preamorphized Ge structure is about twice as high as that of crystalline Ge. At 623 K, the intermixing of the initially amorphous Ge structure is strongly reduced and approaches the mixing of the crystalline material. The temperature dependence of ion-beam mixing is described by competitive amorphization and recrystallization processes.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗