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At least 793 records · Page 44
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Molybdenum disulfide and related materials for water treatment

Catalytic water treatment is provided using an active material driven with an optical and/or electrical excitation. The active material is MoS2, MoSe2, WS2, WSe2, MoxW1-xS2, MoxW1-xSe2, MoSySe2-y, WSySe2-y, or MoxW1-xSySe2-y; wherein 0 < x < 1 and 0 < y < 2. The active material is configured as one or more layered nanostructures having exposed layer edges. A metal catalyst is disposed on the active material. The combined structure of active material and metal catalyst is disposed in the water to be treated. The excitation is provided to the active material to generate one or more reactive oxygen species by dissociation of water, wherein the reactive oxygen species provide water treatment.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Synthesis of High Surface Area VS2 for Nitrogen Reduction

Ammonia synthesis from dinitrogen provides a critical chemical feedstock to agriculture worldwide. The dominant process for ammonia synthesis is the Haber-Bosch process, which is fossil-fuel dependent and energy intensive. The electrochemical nitrogen reduction reaction (NRR) could provide a more environmentally friendly route to industrial ammonia synthesis. We have worked to realize electrochemical NRR by developing transition metal dichalcogenide NRR catalysts. In the first part of this presentation, a VS2-based NRR electrocatalyst, which has shown promising activity and selectivity, will be presented. The synthesis of this VS2-based catalyst is straightforward and results in few-layer VS2 or VSx, (x < 2) nanoflakes. Additionally, the proposed mechanism of NRR on VS2 will be discussed, and we will discuss DFT simulation of NRR on VS2 and MoS2 as well as planned in-situ Raman experiments to probe this mechanism. In the second part of this presentation, we will share several lessons learned during our early NRR research including important points of electrochemical cell design and experimental controls to reduce environmental ammonia contamination of experiments. Finally, we will address areas of opportunity for electrochemical NRR.

dichalcogenide↗
DOE OSTI2022

MoS 2 nanosheet integrated electrodes with engineered 1T-2H phases and defects for efficient hydrogen production in practical PEM electrolysis

Low electrical conductivity and poor accessibility of MoS 2 reaction sites raise great challenges in maximizing the triple-phase-boundary (TPB) sites of MoS 2 -based electrodes and minimizing ohmic losses for efficient hydrogen evolution reaction (HER) in practical proton exchange membrane (PEM) water electrolysis. Herein, we report a scalable hydrothermal approach to fabricate ionomer-free integrated electrodes with engineered 1 T-2 H heterophase and defect-rich MoS 2 nanosheets (MoS 2 NSs) in-situ grown onto the carbon fiber paper (CFP). With an ultralow loading of 0.14 mg/cm 2 , a small voltage of 2.25 V was obtained at 2000 mA/cm 2 in a practical cell with Nafion115 membrane, which outperforms all previously reported high-loading non-precious catalyst-based electrodes. Impressively, it shows 44 times higher mass activity than a high-loading and ionomer-mixed MoS 2 assemblies electrode. Furthermore, this work builds a bridge from catalyst optimization to electrode fabrication and provides a promising direction for improving intrinsic catalytic activity, electrode conductivity and stability for practical PEM water electrolysis.

1T-2H heterophase↗
DOE OSTI2018

A Theoretical Study on Reaction Mechanisms and Kinetics of Thiophene Hydrodesulfurization over MoS 2 Catalysts

In the present work, thiophene hydrodesulphurization (HDS) over the Mo-edge, the S-edge, and the Mo-S connection edge of MoS 2 catalyst with 50% sulfur coverage was studied using first-principles based microkinetic modeling. Two parallel HDS routes, i.e., direct desulfurization (DDS) and hydrogenation (HYD) were taken into account. It has been found that the major reaction route of thiophene HDS on the Mo- and the Mo-S edges is temperature dependent. In the low temperature range of 500~600 K, the HYD route is dominant, leading to the C 4 H 8 formation. As the temperature increases, the DDS route becomes competitive with the HYD route. At the temperature above 650 K, the DDS route will be the dominant HDS reaction route on the Mo- and the Mo-S edges. While the DDS route that leads to the formation of C4H6 is the major thiophene HDS reaction route on the S-edge in the entire temperature range of 500~750 K. The microkinetic modeling results show the overall HDS activity on the S-edge is lower than it on the Mo- and the Mo-S edges. The Mo-S edge also provides a preferential reaction pathway, which facilitates 2-hydrothiophene migration from the Mo-edge to the S-edge, followed by remaining elementary steps with lower activation barriers in the DDS route. The work was financially supported by the National Natural Science Foundation of China (No. 21476012, 21571012, 21407007 and 91534201). The computing time was granted by a scientific theme user proposal in the William R. Wiley Environmental Molecular Sciences Laboratory (EMSL), which is a U.S. Department of Energy national scientific user facility located at Pacific Northwest National Laboratory (PNNL) in Richland, Washington. Part of computing time was provided the National Energy Research Scientific Computing Center (NERSC). D. Mei is supported by the US Department of Energy, Office of Sciences, Office of Basic Energy Sciences, Division of Chemical Sciences, Geosciences & Biosciences.

Thiophene, hydrodesulphurization, MoS2, DFT, micro↗
DOE OSTI2015

Electrical Control of near-Field Energy Transfer between Quantum Dots and Two-Dimensional Semiconductors

Here, we investigate near-field energy transfer between chemically synthesized quantum dots (QDs) and two-dimensional semiconductors. We also fabricate devices in which electrostatically gated semiconducting monolayer molybdenum disulfide (MoS 2 ) is placed atop a homogeneous self-assembled layer of core-shell CdSSe QDs. We demonstrate efficient nonradiative Forster resonant energy transfer (FRET) from QDs into MoS 2 and prove that modest gate-induced variation in the excitonic absorption of MoS 2 leads to large (-500%) changes in the FRET rate. In turn, this allows for up to similar to 75% electrical modulation of QD photoluminescence intensity. The hybrid QD/MoS 2 devices operate within a small voltage range, allow for continuous modification of the QD photoluminescence intensity, and can be used for selective tuning of QDs emitting in the visible-IR range.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Direct Measurement of the Tunable Electronic Structure of Bilayer MoS 2 by Interlayer Twist

Using angle-resolved photoemission on micrometer-scale sample areas, we directly measure the interlayer twist angle-dependent electronic band structure of bilayer molybdenum-disulfide (MoS 2 ). Our measurements, performed on arbitrarily stacked bilayer MoS 2 flakes prepared by chemical vapor deposition, provide direct evidence for a downshift of the quasiparticle energy of the valence band at the Brillouin zone center ($\bar{Γ}$ point) with the interlayer twist angle, up to a maximum of 120 meV at a twist angle of ~40°. Our direct measurements of the valence band structure enable the extraction of the hole effective mass as a function of the interlayer twist angle. While our results at $\bar{Γ}$agree with recently published photoluminescence data, our measurements of the quasiparticle spectrum over the full 2D Brillouin zone reveal a richer and more complicated change in the electronic structure than previously theoretically predicted. The electronic structure measurements reported here, including the evolution of the effective mass with twist-angle, provide new insight into the physics of twisted transition-metal dichalcogenide bilayers and serve as a guide for the practical design of MoS 2 optoelectronic and spin-/valley-tronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2023

High-Mass Loading of Flower-like Ni-MoS 2 microspheres Toward Efficient Intercalation pseudocapacitive Electrode

This work reports the exploration of intercalation pseudocapacitance in a thicker electrode of flowerlike Ni-doped MoS 2 microspheres that features a mass loading of ~10 mg/cm 2 without sacrificing the gravimetric capacitance (~425 F/g at 5 mV/s). Integration of Ni atoms into MoS 2 microspheres not only stabilized the structural integrity but also ameliorated the rapid intercalation and deintercalation of electrolyte ions even at a commercial-level mass loading. The energy instability by Ni doping significantly changed the local bonding behavior and the overall electronic structure of MoS 2 , facilitating the breaking of the MoS 2 layer and generation of more active edge sites, which are responsible for faster reaction kinetics. The experiments attribute the overall capacitance enhancement in (Mo-Ni)S 2 to the increased rate of electrolyte ion insertion and extraction, which is confirmed by b-values close to 0.5, at different potentials, indicating that the current response predominantly depends on the diffusive mechanism for both MoS 2 and Ni-MoS 2 thicker electrodes. The symmetric device constructed with Ni-MoS 2 microspheres exhibited a capacitance value of 101 F/g in 1 mV/s, for which the energy density is 9 Wh/kg, as well as attained an outstanding cycling stability of 10000 cycles with 60% retention at 2 A/g. In addition to providing insights into the development of 2D TMDs, this work explores the design of robust and highly efficient intercalation electrode material for electrochemical energy storage devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Single Nanoflake Photoelectrochemistry Reveals Intrananoflake Doping Heterogeneity That Explains Ensemble-Level Photoelectrochemical Behavior

Transition metal dichalcogenide (TMD) nanoflake thin films are attractive electrode materials for photoelectrochemical (PEC) solar energy conversion and sensing applications, but their photocurrent quantum yields are generally lower than those of bulk TMD electrodes. The poor PEC performance has been primarily attributed to enhanced charge carrier recombination at exposed defect and edge sites introduced by the exfoliation process. Here, a single nanoflake PEC approach reveals how an alternative effect, doping heterogeneity, limits ensemble-level PEC performance. Photocurrent mapping and local photocurrent–potential (i–E) measurements of MoS 2 nanoflakes exfoliated from naturally occurring bulk crystals revealed the presence of n- and p-type domains within the same nanoflake. Interestingly, the n- and p-type domains in the natural MoS 2 nanoflakes were equally efficient for iodide oxidation and tri-iodide reduction (IQE values exceed 80%). At the single domain-level, the natural MoS 2 nanoflakes were nearly as efficient as nanoflakes exfoliated from synthetic n-type MoS 2 crystals. Single domain-level i–E measurements explain why natural MoS 2 nanoflakes exhibit an n-type to p-type photocurrent switching effect in ensemble-level measurements: the n- and p-type diode currents from individual domains oppose each other upon illuminating the entire nanoflake, resulting in zero photocurrent at the switching potential. Furthermore, the doping heterogeneity effect is likely due to nonideal stoichiometry, where p-type domains are S-rich according to XPS measurements. Although this doping heterogeneity effect limits photoanode or photocathode performance, these findings open the possibility to synthesize efficient TMD nanoflake photocatalysts with well-defined lateral p- and n-type domains for enhanced charge separation.

14 SOLAR ENERGY↗
DOE OSTI2020

Formation of Coherent 1H–1T Heterostructures in Single-Layer MoS 2 on Au(111)

Heterojunctions of semiconductors and metals are the fundamental building blocks of modern electronics. Coherent heterostructures between dissimilar materials can be achieved by composition, doping, or heteroepitaxy of chemically different elements. Here, we report the formation of coherent single-layer 1H–1T MoS 2 heterostructures by mechanical exfoliation on Au(111), which are chemically homogeneous with matched lattices but show electronically distinct semiconducting (1H phase) and metallic (1T phase) character, with the formation of these heterojunctions attributed to a combination of lattice strain and charge transfer. The exfoliation approach employed is free of tape residues usually found in many exfoliation methods and yields single-layer MoS 2 with millimeter (mm) size on the Au surface. Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), scanning tunneling microscopy (STM), and scanning tunneling spectroscopy (STS) have collectively been employed to elucidate the structural and electronic properties of MoS 2 monolayers on Au substrates. Bubbles in the MoS 2 formed by the trapping of ambient adsorbates beneath the single layer during deposition, have also been observed and characterized. Lastly, our work here provides a basis to produce two-dimensional heterostructures which represent potential candidates for future electronic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Synthesis of a Hybrid Nanostructure of ZnO-Decorated MoS 2 by Atomic Layer Deposition

We introduce here the synthesis of hybrid nanostructures comprised of ZnO nanocrystals (NCs) decorating nanosheets and nanowires (NWs) of MoS 2 prepared by atomic layer deposition (ALD). The concentration, size, and surface-to-volume ratio of the ZnO NCs can be systematically engineered by controlling both the number of ZnO ALD cycles and the properties of the MoS 2 substrates, which are prepared by sulfurizing ALD MoO 3 . Analysis of the chemical composition combined with electron microscopy and synchrotron X-ray techniques as a function of the number of ZnO ALD cycles, together with the results of quantum chemical calculations, help elucidate the ZnO growth mechanism and its dependence on the properties of the MoS 2 substrate. The defect density and grain size of MoS 2 nanosheets are controlled by the sulfurization temperature of ALD MoO 3 , and the ZnO NCs in turn nucleate selectively at defect sites on MoS 2 surface and enlarge with increasing ALD cycle numbers. At higher ALD cycle numbers, the coalescence of ZnO NCs contributes to an increase in areal coverage and NC size. Furthermore, the geometry of the hybrid structures can be tuned by changing the dimensionality of the MoS 2 , by employing vertical NWs of MoS 2 as the substrate for ALD ZnO NCs, which in turn leads to improvement of the relevant surface-to-volume ratio. Such materials are expected to find use in newly expanded applications, especially those such as sensors or photo-devices based on a p-n heterojunction which relies on coupling transition metal dichalcogenides (TMDCs) with NCs.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Structural stability of single-layer MoS 2 under large strain

Out-of-plane relaxation can introduce MoS 2 in flexible electronic/optoelectronic devices, while under larger strain it is possible to frustrate the structure of MoS 2 . On the basis of first-principle calculations, we investigated the ideal tensile stress strain relations and failure mechanism of single-layer MoS 2 structure under large strain. Moreover, the instability of phonon modes near the K point results in the decrease of tensile stress under large strain. The relative out-of-plane movement of Mo atoms is found to contribute to the mechanism of the soft phonon mode.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Boosting Piezoelectricity by 3D Printing PVDF‐MoS 2 Composite as a Conformal and High‐Sensitivity Piezoelectric Sensor

Abstract Additively manufactured flexible and high‐performance piezoelectric devices are highly desirable for sensing and energy harvesting of 3D conformal structures. Herein, the study reports a significantly enhanced piezoelectricity in polyvinylidene fluoride (PVDF) achieved through the in situ dipole alignment of PVDF within PVDF‐2D molybdenum disulfide (2D MoS 2 ) composite by 3D printing. The shear stress‐induced dipole poling of PVDF and 2D MoS 2 alignment are harnessed during 3D printing to boost piezoelectricity without requiring a post‐poling process. The results show a remarkable, more than the eight‐fold increment in the piezoelectric coefficient ( d 33 ) for 3D printed PVDF‐8wt.% MoS 2 composite over cast neat PVDF. The underlying mechanism of piezoelectric property enhancement is attributed to the increased volume fraction of β phase in PVDF, filler fraction, heterogeneous strain distribution around PVDF‐MoS 2 interfaces, and strain transfer to the nanofillers as confirmed by microstructural analysis and finite element simulation. These results provide a promising route to design and fabricate high‐performance 3D piezoelectric devices via 3D printing for next‐generation sensors and mechanical–electronic conformal devices.

2D MoS2↗
DOE OSTI2023

On the Interplay between Size and Disorder in Suppressing Intercalation-Induced Phase Transitions in Pseudocapacitive Nanostructured MoS 2

Pseudocapacitors are an emerging class of energy storage materials that offer an attractive compromise between the energy density of batteries and power density of electric double-layer capacitors. Decreasing particle size and increasing surface area of battery materials is a common approach for introducing pseudocapacitive behavior and increasing power density. However, in many cases, as the crystal size is reduced, lattice disorder of unknown extent is also introduced, making it difficult to characterize the relative contribution of size and disorder to fast-charging performance. Here, in this work, a series of nanostructured MoS 2 materials are synthesized with different crystallite sizes and degrees of crystallinity to decouple the effects of size and disorder on charge/discharge kinetics. The extent and type of disorder in each material is quantified by total X-ray scattering experiments and pair distribution function analyses. Electrochemical characterization, including galvanostatic rate capability, cyclic voltammetry, and various kinetic analyses, are used to demonstrate that both decreasing particle size and introducing lattice disorder are effective strategies for increasing charge storage kinetics, and that the effects are additive. Finally, operando X-ray diffraction measurements show that both size and disorder can be used suppress first-order Li + intercalation-induced phase transitions, a key feature for enabling pseudocapacitive charge storage.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Chemical Vapor Deposition of Monolayer Rhenium Disulfide (ReS 2 )

A direct synthesis of monolayer and multilayer ReS 2 by chemical vapor deposition at a low temperature of 450 °C is reported. We performed a detailed characterization of this material using various spectroscopy and microscopy methods. Furthermore initial field-effect transistor characteristics are evaluated, which highlight the potential in being used as an n-type semiconductor.

2D materials↗
DOE OSTI2023

Molybdenum Disulfide Nanoribbons with Enhanced Edge Nonlinear Response and Photoresponsivity

MoS 2 nanoribbons have attracted increased interest due to their properties, which can be tailored by tuning their dimensions. Herein, the growth of MoS 2 nanoribbons and triangular crystals formed by the reaction between films of MoOx (2 2 nanoribbons arising from distinct contributions from the single–layer edges and multilayer core. Nanoscale imaging reveals a blue-shifted exciton emission of the monolayer edge compared to the isolated MoS 2 monolayers due to built-in local strain and disorder. We further report on an ultrasensitive photodetector made of a single MoS 2 nanoribbon with a responsivity of 8.72 × 10 2 A W –1 at 532 nm, among the highest reported up-to-date for single-nanoribbon photodetectors. These findings can inspire the design of MoS 2 semiconductors with tunable geometries for efficient optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Spatially Precise Light‐Activated Dedoping in Wafer‐Scale MoS 2 Films

2D materials, particularly transition metal dichalcogenides (TMDCs), have shown great potential for microelectronics and optoelectronics. However, a major challenge in commercializing these materials is the inability to control their doping at a wafer scale with high spatial fidelity. Interface chemistry is used with the underlying substrate oxide and concomitant exposure to visible light in ambient conditions for photo-dedoping wafer scale MoS 2 . It is hypothesized that the oxide layer traps photoexcited holes, leaving behind long-lived electrons that become available for surface reactions with ambient air at sulfur vacancies (defect sites) resulting in dedoping. Additionally, high fidelity spatial control is showcased over the dedoping process, by laser writing, and fine control achieved over the degree of doping by modulating the illumination time and power density. This localized change in MoS 2 doping density is very stable (at least 7 days) and robust to processing conditions like high temperature and vacuum. The scalability and ease of implementation of this approach can address one of the major issues preventing the “Lab to Fab” transition of 2D materials and facilitate its seamless integration for commercial applications in multi-logic devices, inverters, and other optoelectronic devices.

14 SOLAR ENERGY↗
DOE OSTI2023

Fully Inkjet‐Printed, 2D Materials‐Based Field‐Effect Transistor for Water Sensing

Abstract Despite significant progress in solution‐processing of 2D materials, it remains challenging to reliably print high‐performance semiconducting channels that can be efficiently modulated in a field‐effect transistor (FET). Herein, electrochemically exfoliated MoS 2 nanosheets are inkjet‐printed into ultrathin semiconducting channels, resulting in high on/off current ratios up to 10 3 . The reported printing strategy is reliable and general for thin film channel fabrication even in the presence of the ubiquitous coffee‐ring effect. Statistical modeling analysis on the printed pattern profiles suggests that a spaced parallel printing approach can overcome the coffee‐ring effect during inkjet printing, resulting in uniform 2D flake percolation networks. The uniformity of the printed features allows the MoS 2 channel to be hundreds of micrometers long, which easily accommodates the typical inkjet printing resolution of tens of micrometers, thereby enabling fully printed FETs. As a proof of concept, FET water sensors are demonstrated using printed MoS 2 as the FET channel, and printed graphene as the electrodes and the sensing area. After functionalization of the sensing area, the printed water sensor shows a selective response to Pb 2+ in water down to 2 ppb. This work paves the way for additive nanomanufacturing of FET‐based sensors and related devices using 2D nanomaterials.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Ultrastrong Coupling of Band‐Nested Excitons in Few‐Layer Molybdenum Disulphide

Abstract The 2D transition‐metal dichalcogenides (2D TMDCs) are an intriguing platform for studying strong light–matter interactions because they combine the electronic properties of conventional semiconductors with the optical resonances found in organic systems. However, the coupling strengths demonstrated in strong exciton–polariton coupling in the 2D TMDCs remain much lower than those found in organic systems. In this paper, a new approach is taken by utilizing the large oscillator strength of the above‐band gap C exciton in few‐layer molybdenum disulphide (FL‐MoS 2 ). A k ‐space Rabi splitting of 293 meV is shown when coupling FL‐MoS 2 C excitons to surface plasmon polaritons at room temperature. This value is 11% of the uncoupled exciton energy (2.67 eV or 464 nm), ≈2× what is typically seen in the TMDCs, placing the system in the ultrastrong coupling regime. The results take a step toward finally achieving the efficient quantum coherent processes of ultrastrong coupling in a CMOS‐compatible system—the 2D TMDCs—in the visible spectrum.

36 MATERIALS SCIENCE↗