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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 793 records · Page 44
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Ginzburg-Landau theory of the bcc-liquid interface kinetic coefficient

We extend the Ginzburg-Landau (GL) theory of atomically rough bcc-liquid interfaces outside of equilibrium. We use this extension to derive an analytical expression for the kinetic coefficient, which is the proportionality constant μ(nˆ) between the interface velocity along a direction nˆ normal to the interface and the interface undercooling. The kinetic coefficient is expressed as a spatial integral along the normal direction of a sum of gradient square terms corresponding to different nonlinear density wave profiles. Anisotropy arises naturally from the dependence of those profiles on the angles between the principal reciprocal lattice vectors K → i and nˆ. Values of the kinetic coefficient for the (100), (110), and (111) interfaces are compared quantitatively to the prediction of linear Mikheev-Chernov (MC) theory and previous molecular dynamics (MD) simulation studies of crystallization kinetics for a classical model of Fe. Additional MD simulations are carried out here to compute the relaxation time of density waves in the liquid in order to make this comparison free of fit parameters. The GL theory predicts an expression for μ similar to the MC theory but yields a better agreement with MD simulations for both its magnitude and anisotropy due to a fully nonlinear description of density wave profiles across the solid-liquid interface. In particular, the overall magnitude of μ predicted by GL theory is an order of magnitude larger than predicted by the MC theory. GL theory is also used to derive an inverse relation between μ and the solid-liquid interfacial free energy. Here, the general methodology used here to derive an expression for μ(nˆ) also applies to amplitude equations derived from the phase-field-crystal model, which only differ from GL theory by the choice of cubic and higher order nonlinearities in the free-energy density.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Experimental metrology to obtain thermal phonon transmission coefficients at solid interfaces

Interfaces play an essential role in phonon-mediated heat conduction in solids, impacting applications ranging from thermoelectric waste heat recovery to heat dissipation in electronics. From the microscopic perspective, interfacial phonon transport is described by transmission coefficients that link vibrational modes in the materials composing the interface. But, direct experimental determination of these coefficients is challenging because most experiments provide a mode-averaged interface conductance that obscures the microscopic detail. Here, we report a metrology to extract thermal phonon transmission coefficients at solid interfaces using ab initio phonon transport modeling and a thermal characterization technique, time-domain thermoreflectance. In combination with transmission electron microscopy characterization of the interface, our approach allows us to link the atomic structure of an interface to the spectral content of the heat crossing it. This work provides a useful perspective on the microscopic processes governing interfacial heat conduction.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Structural distortions at polar manganite interfaces

Electronic, lattice, and spin interactions at the interfaces between crystalline complex transition-metal oxides can give rise to a wide range of functional electronic and magnetic phenomena not found in bulk. At heterointerfaces, these interactions may be enhanced by combining oxides where the polarity changes at the interface. In this work, the physical structure between nonpolar SrTiO 3 and polar La 1-x Sr x MnO 3 ($x$ = 0.2) is investigated using high-resolution synchrotron x-ray diffraction to directly determine the role of structural distortions in compensating the polar discontinuity. At both the oxide-oxide interface and vacuum-oxide interfaces, the lattice is found to expand and rumple along the growth direction. The SrTiO 3 /La 1-x SrxMnO 3 interface also exhibits intermixing of La and Sr over a few unit cells. The results thus demonstrate that polar distortions and ionic intermixing coexist and both pathways play a significant role at interfaces with polar discontinuities.

36 MATERIALS SCIENCE↗
DOE OSTI2014

First-principles approach to calculating energy level alignment at aqueous semiconductor interfaces

A first-principles approach is demonstrated for calculating the relationship between an aqueous semiconductor interface structure and energy level alignment. The physical interface structure is sampled using density functional theory based molecular dynamics, yielding the interface electrostatic dipole. The GW approach from many-body perturbation theory is used to place the electronic band edge energies of the semiconductor relative to the occupied 1 b ₁ energy level in water. The application to the specific cases of nonpolar (101¯0 ) facets of GaN and ZnO reveals a significant role for the structural motifs at the interface, including the degree of interface water dissociation and the dynamical fluctuations in the interface Zn-O and O-H bond orientations. As a result, these effects contribute up to 0.5 eV.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

High- T c superconductivity at the interface between the CaCuO 2 and SrTiO 3 insulating oxides

At interfaces between complex oxides it is possible to generate electronic systems with unusual electronic properties, which are not present in the isolated oxides. One important example is the appearance of superconductivity at the interface between insulating oxides, although, until now, with very low T c . We report the occurrence of high T c superconductivity in the bilayer CaCuO 2 /SrTiO 3 , where both the constituent oxides are insulating. In order to obtain a superconducting state, the CaCuO 2 /SrTiO 3 interface must be realized between the Ca plane of CaCuO 2 and the TiO 2 plane of SrTiO 3 . Only in this case can oxygen ions be incorporated in the interface Ca plane, acting as apical oxygen for Cu and providing holes to the CuO 2 planes. In addition, a detailed hole doping spatial profile can be obtained by scanning transmission electron microscopy and electron-energy-loss spectroscopy at the O K edge, clearly showing that the (super)conductivity is confined to about 1–2 CaCuO 2 unit cells close to the interface with SrTiO 3 . The results obtained for the CaCuO 2 /SrTiO 3 interface can be extended to multilayered high T c cuprates, contributing to explaining the dependence of T c on the number of CuO 2 planes in these systems.

36 MATERIALS SCIENCE↗
DOE OSTI2023

First principles study of the electronic structure of the Ni 2 MnIn / InAs and Ti 2 MnIn / InSb interfaces

We present a first principles study of the electronic and magnetic properties of epitaxial interfaces between the Heusler compounds, Ti 2 MnIn and Ni 2 MnIn, and the III-V semiconductors, InSb and InAs, respectively. We use density functional theory (DFT) with a machine-learned Hubbard U correction determined by Bayesian optimization. Here, we evaluate these interfaces for prospective applications in Majorana-based quantum computing and spintronics. In both interfaces, states from the Heusler penetrate into the gap of the semiconductor, decaying within a few atomic layers. The magnetic interactions at the interface are weak and local in space and energy. Magnetic moments of less than 0.1 µB are induced in the two atomic layers closest to the interface. The induced spin polarization around the Fermi level of the semiconductor decays within a few atomic layers. The decisive factor for the induced spin polarization around the Fermi level of the semiconductor is the spin polarization around the Fermi level in the Heusler, rather than the overall magnetic moment. As a result, the ferrimagnetic narrow-gap semiconductor Ti 2 MnIn induces a more significant spin polarization in the InSb than the ferromagnetic metal Ni 2 MnIn induces in the InAs. This is explained by the position of the transition metal d states in the Heusler with respect to the Fermi level. Based on our results, these interfaces are unlikely to be useful for Majorana devices but could be of interest for spintronics.

36 MATERIALS SCIENCE↗
DOE OSTI2018

A Comparative Study of Interface Techniques for Transmission and Distribution Dynamic Co-Simulation

Transmission and distribution (T&D) dynamic co-simulation is a practical and effective approach to leverage existing simulation tools for transmission and distribution systems to simulate dynamic stability and performance of T&D systems in a systematic manner. Given that these tools are developed as stand-alone programs and there are inherent differences between them, interface techniques become critical to “bridge” them. Two important unsolved questions are: 1) which interface technique is better and should be used, and 2) how the modeling and simulation capabilities in these tools that are available and can be exploited for co-simulation should be considered when selecting an interface technique. This paper presents a comprehensive study for different interface techniques that can be employed for T&D dynamic co-simulation. The study provided insights to the pros and cons of each interface technique, and helped researchers make informed decisions on choosing a proper interface technique.

Huang, Qiuhua↗
DOE OSTI2019

Role of Caulobacter Cell Surface Structures in Colonization of the Air-Liquid Interface

In aquatic environments, Caulobacter spp. can be found at the boundary between liquid and air known as the neuston. I report an approach to study temporal features of Caulobacter crescentus colonization and pellicle biofilm development at the air-liquid interface and have defined the role of cell surface structures in this process. At this interface, C. crescentus initially forms a monolayer of cells bearing a surface adhesin known as the holdfast. When excised from the liquid surface, this monolayer strongly adheres to glass. The monolayer subsequently develops into a three-dimensional structure that is highly enriched in clusters of stalked cells known as rosettes. As this pellicle film matures, it becomes more cohesive and less adherent to a glass surface. A mutant strain lacking a flagellum does not efficiently reach the surface, and strains lacking type IV pili exhibit defects in organization of the three-dimensional pellicle. Strains unable to synthesize the holdfast fail to accumulate at the boundary between air and liquid and do not form a pellicle. Phase-contrast images support a model whereby the holdfast functions to trap C. crescentus cells at the air-liquid boundary. Unlike the holdfast, neither the flagellum nor type IV pili are required for C. crescentus to partition to the air-liquid interface. While it is well established that the holdfast enables adherence to solid surfaces, this study provides evidence that the holdfast has physicochemical properties that allow partitioning of nonmotile mother cells to the air-liquid interface and facilitate colonization of this microenvironment. In aquatic environments, the boundary at the air interface is often highly enriched with nutrients and oxygen. Colonization of this niche likely confers a significant fitness advantage in many cases. This study provides evidence that the cell surface adhesin known as a holdfast enables Caulobacter crescentus to partition to and colonize the air-liquid interface. Additional surface structures, including the flagellum and type IV pili, are important determinants of colonization and biofilm formation at this boundary. Considering that holdfast-like adhesins are broadly conserved in Caulobacter spp. and other members of the diverse class Alphaproteobacteria , these surface structures may function broadly to facilitate colonization of air-liquid boundaries in a range of ecological contexts, including freshwater, marine, and soil ecosystems

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2022

The Critical Stack Pressure to Alter Void Generation at Li/Solid-Electrolyte Interfaces during Stripping

The lithium stripping process generates vacancies, which may accumulate as voids and lead to uneven current distribution and dendrite growth in the following plating cycles. A stack pressure is typically required during stripping, but how to optimize the stack pressure is not clear. In this work, extremely lithiophilic Li/Li 2 O and lithiophobic Li/LiF interfaces were used to reveal the combining effect of interface interaction and stack pressure induced lithium creep on the stripping critical current density (CCD). A multiscale simulation scheme with Density Functional Theory (DFT), kinetic Monte Carlo (KMC) simulations, and an analytical model was developed. The analytical model predicted lithiophobic interfaces require a higher stack pressure than lithiophilic interfaces to reach the same CCD. The KMC simulations also showed higher stack pressure is needed at lithiophobic interfaces to accelerate Li vacancy diffusion into the bulk and maintain a flat surface. This stack pressure needs to be high enough to alter the Li forward-and-backward hopping barriers at the interface. This multiscale simulation scheme illustrates the importance to include the chemical-mechanical effects during Li stripping morphology evolution. It can be used to design ideal interlayer coating materials to maintain a flat Li surface during cycling.

25 ENERGY STORAGE↗
DOE OSTI2023

An implicit barotropic mode solver for MPAS-ocean using a modern Fortran solver interface

Here, we demonstrate use of a modern Fortran solver interface to manage solver algorithms for an implicit barotropic mode solver in the Model for Predictions Across Scales-Ocean (MPAS-O). ForTrilinos, a Fortran interface to Trilinos that contains a large collection of solver capabilities written in C++, has been implemented in MPAS-O to provide access to a suite of linear solver options. By virtue of the simplified wrapper and interface generator (SWIG) automation tool that generates modern Fortran interfaces to C++ code, we were able to implement the Fortran solver interface in MPAS-O using a familiar Fortran coding style while minimizing performance degradation. The ForTrilinos solver interface is written within MPAS-O’s time stepping modules as a subroutine in conjunction with MPAS-O code. Applied to an idealized ocean and a high-resolution realistic ocean test case, parallel performance of ForTrilinos solvers is examined. It is found that parallel scalability of the ForTrilinos solvers is highly dependent on the number of global synchronization points per solver iteration in each iterative solver algorithm. ForTrilinos solvers perform best compared to the Fortran hand-crafted (FHC) solver when the amount of work per processor is large enough. However, parallel scalability is better with the FHC solver and so when the work per core is modest FHC outperforms ForTrilinos. The intercomparison between the ForTrilinos and FHC solvers reveals that this performance hit in the ForTrilinos solver mostly comes from the global synchronization process, while suggesting that the matrix-vector multiplication process in the FHC solver needs to be optimized for better performance.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2014

Proposing an Abstracted Interface and Protocol for Computer Systems

While it made sense for historical reasons to develop different interfaces and protocols for memory channels, CPU to CPU interactions, and I/O devices, ongoing developments in the computer industry are leading to more converged requirements and physical implementations for these interconnects. As it becomes increasingly common for advanced components to contain a variety of computational devices as well as memory, the distinction between processors, memory, accelerators, and I/O devices becomes increasingly blurred. As a result, the interface requirements among such components are converging. There is also a wide range of new disruptive technologies that will impact the computer market in the coming years, including 3D integration and emerging NVRAM memory. Optimal exploitation of these technologies cannot be done with the existing memory, storage, and I/O interface standards. The computer industry has historically made major advances when industry players have been able to add innovation behind a standard interface. The standard interface provides a large market for their products and enables relatively quick and widespread adoption. To enable a new wave of innovation in the form of advanced memory products and accelerators, we need a new standard interface explicitly designed to provide both the performance and flexibility to support new system integration solutions

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2014

Proposing an Abstracted Interface and Protocol for Computer Systems

While it made sense for historical reasons to develop different interfaces and protocols for memory channels, CPU to CPU interactions, and I/O devices, ongoing developments in the computer industry are leading to more converged requirements and physical implementations for these interconnects. As it becomes increasingly common for advanced components to contain a variety of computational devices as well as memory, the distinction between processors, memory, accelerators, and I/O devices become s increasingly blurred. As a result, the interface requirements among such components are converging. There is also a wide range of new disruptive technologies that will impact the computer market in the coming years , including 3D integration and emerging NVRAM memory. Optimal exploitation of these technologies cannot be done with the existing memory, storage, and I/O interface standards. The computer industry has historically made major advances when industry players have been able to add innovation behind a standard interface. The standard interface provides a large market for their products and enables relatively quick and widespread adoption. To enable a new wave of innovation in the form of advanced memory products and accelerators, we need a new standard interface explicitly designed to provide both the performance and flexibility to support new system integration solutions.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2015

Probing the electronic structure of buried interfaces via resonant scattering methods

Devices such as next-generation magnetic read heads demand energy storage capabilities and switching times beyond what is met by current permanent magnets. Superlattices of soft and hard ferromagnets (FM) that exhibit exchange-spring coupling are well-suited to be optimized for this purpose. Because of perovskites’ tunable properties from competing charge and spin degrees of freedom, one such system of interest is (001)-oriented La 0.7 Sr 0.3 CoO 3 (LSCO) capped with La 0.7 Sr 0.3 MnO 3 (LSMO). In the interfacial layers, FM moments are exchange-coupled strongly to each other, increasing overall coercivity. However, this system has subtleties that cannot be teased out in simple spin orientation models. In particular, growth mechanisms lead to rough interfaces and interlayer diffusion, which may drive a poorly understood phenomenon. The LSCO interfaces exhibit distinct magnetic properties from the bulk, possibly owing to an unexpected Co 2+ oxidation state near the LSMO that could lead to superexchange with Mn 4+ or possibly antiferromagnetism. Therefore the characterization of the electronic structure of interfaces is crucial to our understanding of the magnetic structure, but this is impossible with surface techniques, since most interfaces are buried, as well as spectroscopy, because the layers are similar in density. Specular x-ray reflectivity (SXR) is one method that describes layer thickness, density, and out-of-plane interface roughness of surfaces and buried interfaces. To characterize further, we apply SXR over absorption edges to increase Co/Mn contrast. Back-conversion to x-ray absorption near-edge structure (XANES) provides spectroscopic information on oxidation states that considers each sublayer separately, thereby determining how the sublayers couple.

36 MATERIALS SCIENCE↗
DOE OSTI2024

A Scalable & Non-Destructive Characterization Strategy to Study Semiconductor/Dielectric Interfaces and Predict Wafer-Level Device Performance

The defect density present at the dielectric-semiconductor interface in an MOS structure directly influences the channel carrier characteristics in semiconductor devices, especially in wide bandgap material systems used in power devices. While these trap defects are typically quantified through electrical characterization of MOS-capacitor test structures, this treatment offers very little insight into the physical nature of interface defects. Such shortcomings demand a physical characterization strategy to guide fabrication optimization. X-ray photoelectron spectroscopy (XPS) is suggested as a viable technique to determine chemical data for dielectric interfaces formed using atomic layer deposition (ALD) on GaN substrates. Previously, 1-D XPS characterization has confirmed the presence of a Ga x O y interlayer between ALD dielectrics and the GaN substrate. In this work, XPS data is serially collected to form 2-D images of an ALD-Al 2 O 3 /GaN interface as a proof-of-concept experiment for in-situ XPS quality monitoring during ALD processing. The information provided by this work reveals some of the challenges for incorporating XPS characterization as an in-situ strategy during fabrication of GaN-based devices. Separately, electrical mapping of a 2-D array of ALD-Al 2 O 3 /GaN MOS-capacitor devices provide a means to quantify the spatial variations in interface quality across a single wafer. Physical characterization techniques, such as time-of-flight secondary ion mass spectroscopy, provide additional chemical information about the Al 2 O 3 /Ga x O y /GaN structure that complement the electrical mapping results. This analysis shows that a higher Ga x O y content correlates with higher interface state defects for trap energies deep in the band gap.

42 ENGINEERING↗
DOE OSTI2013

Surface Charge Densities and Acidities of Biogeochemically Important Organic Adlayers at Mineral/Water Interfaces Studied by Nonlinear Optics

At a given bulk solution pH, mineral/water interfaces contain a corresponding number of charged and neutral species consisting of either SiOH, SiO - and SiOH 2 + groups in the case of fused quartz or of Si-R-COOH and Si-R-COO - groups in the case of the carboxylic acid-functionalized fused quartz/water interfaces. In the "$\chi^{(3)}$ method", as it has been termed by Eisenthal and co-workers who pioneered it and which is related to electric field induced SHG (EFISH), the SHG E-field depends on the interfacial potential that is produced by the interfacial charges. In the $\chi^{(3)}$ method, the SHG E-field is modeled with the familiar second-order response11 to which one adds a third-order term according to E SHG =$\chi^{(2)}$ E ω E ω + $\chi^{(3)}$ E ω E ω Φ o . The third order response is given by the product of the third order nonlinear susceptibility, $\chi^{(3)}$, the two applied electromagnetic probe fields oscillating at frequency ω, E ω , and the interfacial potential, Φ o , which is produced by the interfacial charges, the corresponding spatial distribution of the counter charges, and dipolar arrays of aligned water molecules, whose structure and dynamics have been studied using sum frequency generation. Note that the localization of the protonatable and deprotonatable groups at the interface and the high sensitivity of the $\chi^{(3)}$ method to the Φ o make the experiment interface-specific. In addition, the signal detection formalism can be viewed as a self-heterodyned detection scheme in which the second order response would be the local oscillator and the third order response would be the signal. As part of work focusing on metal ion adsorption to oxide/water interfaces, we published $\chi^{(3)}$ charge screening experiments carried out on fused quartz/water and single crystal α-alumina/water interfaces that agree very well with data by Eisenthal and coworkers as well as Higgins et al.

58 GEOSCIENCES↗
DOE OSTI2015

User interface for a tele-operated robotic hand system

Disclosed here is a user interface for a robotic hand. The user interface anchors a user's palm in a relatively stationary position and determines various angles of interest necessary for a user's finger to achieve a specific fingertip location. The user interface additionally conducts a calibration procedure to determine the user's applicable physiological dimensions. The user interface uses the applicable physiological dimensions and the specific fingertip location, and treats the user's finger as a two link three degree-of-freedom serial linkage in order to determine the angles of interest. The user interface communicates the angles of interest to a gripping-type end effector which closely mimics the range of motion and proportions of a human hand. The user interface requires minimal contact with the operator and provides distinct advantages in terms of available dexterity, work space flexibility, and adaptability to different users.

42 ENGINEERING↗
DOE OSTI2018

Key-value store with internal key-value storage interface

A key-value store is provided having one or more key-value storage interfaces. A key-value store on at least one compute node comprises a memory for storing a plurality of key-value pairs; and an abstract storage interface comprising a software interface module that communicates with at least one persistent storage device providing a key-value interface for persistent storage of one or more of the plurality of key-value pairs, wherein the software interface module provides the one or more key-value pairs to the at least one persistent storage device in a key-value format. The abstract storage interface optionally processes one or more batch operations on the plurality of key-value pairs. A distributed embodiment for a partitioned key-value store is also provided.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2020

CdSexTe1-x /CdTe Devices With Reduced Interface Recombination Through Novel Back Contacts and Doping Strategies

In order to study rear interface recombination in CdSexTe1-x/CdTe solar cells, several back contact structures were fabricated using combinations of tellurium, alumina, amorphous silicon, and indium tin oxide. Film side Time-Resolved Photoluminescence measurements were taken to measure carrier lifetimes and interface recombination at the back interface. We show increasingly improved interface passivation through the subsequent use of alumina, amorphous silicon, and ITO. Additionally, we provide evidence that an arsenic-doped absorber forms a better interface with numerous back contact structures. Reductions in the back interface recombination velocity are shown to correlate with improvements in device external radiative efficiency.

13 HYDRO ENERGY↗