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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 793 records · Page 44
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Microstructure-dependent rate theory model of defect segregation and phase stability in irradiated polycrystalline LiAlO 2

We report gamma lithium aluminate (LiAlO 2 ) is a breeder material for tritium and is one of key components in a tritium-producing burnable absorber rod (TPBAR). Dissolution and precipitation of second phases such as LiAl 5 O 8 and voids are observed in irradiated LiAlO 2 . Such microstructure changes cause the degradation of thermomechanical properties of LiAlO 2 and affect tritium retention and release kinetics, and hence, the TPBAR performance. In this work, a microstructure-dependent model of radiation-induced segregation (RIS) has been developed for investigating the accumulation of species and phase stability in polycrystalline LiAlO 2 structures under irradiation. Three sublattices (i.e. [Li, Al, V] I [O, V o ] II [Li i , Al i , O i , V i ] III ), and concentrations of six diffusive species (i.e. Li; vacancy of Li or Al at [Li, Al, V] I sublattice, O vacancy at [O, V o ] II sublattice, and Li, Al and O interstitials at [Li i , Al i , O i , V i ] III interstitial sublattices; are used to describe spatial and temporal distributions of defects and chemistry. Microstructure-dependent thermodynamic and kinetic properties including the generation, reaction, and chemical potentials of defects and defect mobility are taken into account in the model. The parametric studies demonstrated the capability of the developed RIS model to assess the effect of thermodynamic and kinetic properties of defects on the segregation and depletion of species in polycrystalline structures and to explain the phase stability observed in irradiated LiAlO 2 samples. The developed RIS model will be extended to study the precipitation of LiAl 5 O 8 and voids and tritium retention by integrating the phase-field method.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Total dose effect of Al 2 O 3 -based metal–oxide–semiconductor structures and its mechanism under gamma-ray irradiation

In our work, insights into the total dose response and native point defect behavior in the Al2O3 gate dielectric during irradiation were gained by gamma-ray irradiation experiments and first-principles calculations. It is found that the O vacancy (VO) can act as a hole trap in the Al2O3 gate dielectric during irradiation, leading to the negative shift of the capacitance–voltage (C–V) curves of the Al2O3-based metal–oxide–semiconductor (MOS) structure. Our calculations show that the neutral defect VO becomes a +2 charged center after irradiation, and the positively charged VO is a kind of conductive path for electrons, which contributes to an increase of the leakage current in the irradiated MOS capacitors. Additionally, the trapped holes are accumulated with irradiation doses, which can lower the barrier height of the Al2O3 gate oxide and further cause the increase of the leakage current. The other native point defects in the Al2O3 layer, such as aluminum vacancy (VAl), aluminum interstitial (Ali) and oxygen interstitial (Oi), only act as fixed charge centers during irradiation. Net negative charges existing in the Al2O3 layers before irradiation are mainly induced by the negatively charged defects of VAl and Oi.

Engineering↗
DOE OSTI2018

Revealing the role of nitrogen on hydride nucleation and stability in pure niobium using first-principles calculations

Niobium provides the basis for all superconducting radio frequency (SRF) cavities in use, however, hydrogen is readily absorbed by niobium during cavity fabrication and subsequent niobium hydride precipitation when cooled to cryogenic temperatures degrades its superconducting properties. In the last few years the addition of dopant elements such as nitrogen has been experimentally shown to significantly improve the quality factor of niobium SRF cavities. One of the contributors to Q degradation can be presence of hydrides; however, the underlying mechanisms associated with the kinetics of hydrogen and the thermodynamic stability of hydride precipitates in the presence of dopants are not well known. Using first principles calculations, the effects of nitrogen on the energetic preference for hydrogen to occupy interstitial sites and hydride stability are examined. In particular, the presence of nitrogen significantly increased the energy barrier for hydrogen diffusion from one tetrahedral site to another interstitial site. Furthermore, the beta niobium hydride precipitate became energetically unstable upon addition of nitrogen in the niobium matrix. Through electronic density of states and valence charge transfer calculations, nitrogen showed a strong tendency to accumulate charge around itself, thereby decreasing the strength of covalent bonds between niobium and hydrogen atoms leading to a very unstable state for hydrogen and hydrides. These calculations show that the presence of nitrogen during processing plays a critical role in controlling hydride precipitation and subsequent SRF properties.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Diffusion of acceptor dopants in monoclinic 𝛽−Ga 2⁢ O 3

𝛽−Ga 2 ⁢O 3 is a promising material for next-generation power electronics because of its ultrawide band gap and high critical breakdown voltage. However, realizing its full potential requires precise control over dopant incorporation and stability. In this work, we use first-principles calculations to systematically assess the diffusion behavior of eight potential deep-level substitutional acceptors (Au, Ca, Co, Cu, Fe, Mg, Mn, and Ni) in 𝛽−Ga 2 ⁢O 3 . We consider two key diffusion mechanisms: (i) interstitial diffusion under nonequilibrium conditions relevant to ion implantation, and (ii) trap-limited diffusion (TLD) under near-equilibrium thermal annealing conditions. Our results reveal a strong diffusion anisotropy along the 𝑏 and 𝑐 axes, with dopant behavior governed by competition between diffusion and incorporation (or dissociation) activation energies. Under interstitial diffusion, Ca$^{2+}_{i}$ and Mg$^{2+}_{i}$ show the most favorable combination of low migration and incorporation barriers, making them promising candidates for efficient doping along the 𝑏 and 𝑐 axes, respectively. In contrast, Au$^{+}_{i}$ diffuses readily, but exhibits an incorporation barrier that exceeds 5 eV, rendering it ineffective as a dopant. From a thermal stability perspective, Co$^{2+}_{i}$ shows poor activation but high diffusion barriers, which may suppress undesirable migration at elevated temperatures. Under trap-limited diffusion, the dissociation of dopant-host complexes controls mobility. Mg$^{2+}_{i}$ again emerges as a leading candidate, exhibiting the lowest dissociation barriers along both axes, whereas Co$^{2+}_{i}$ and Fe$^{2+}_{i}$ display the highest barriers, suggesting improved dopant retention under thermal stress. In conclusion, our findings guide dopant selection by balancing activation and thermal stability, essential for robust semi-insulating substrates.

Defects↗
DOE OSTI2022

Optimized geometries for cooperative photon storage in an impurity coupled to a two-dimensional atomic array

The collective modes of two-dimensional ordered atomic arrays can modify the radiative environment of embedded atomic impurities. We analyze the role of the lattice geometry on the impurity's emission linewidth by comparing the effective impurity decay rate obtained for all noncentered Bravais lattices and an additional honeycomb lattice. We demonstrate that the lattice geometry plays a crucial role in determining the effective decay rate for the impurity. In particular, we find that the minimal effective decay rate appears in lattices where the number of the impurity's nearest neighbors is maximal and the number of distinct distances among nearest neighbors is minimal. Here we further show that, in the choice between interstitial and substitutional placement of the impurity, the former always wins by exhibiting a lower decay rate and longer photon storage. For interstitial placements, we determine the optimal impurity position in the lattice plane, which is not necessarily found in the center of the lattice plaquette.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2021

Carbon complexes in highly C-doped GaN

We investigate the properties of heavily C-doped GaN grown by hydride vapor phase epitaxy using both optical experiments and hybrid density functional theory calculations. Previous work has established that carbon acceptors (C N ) give rise to a yellow luminescence band near 2.2 eV along with a blue luminescence band near 2.9 eV. Photoluminescence measurements show the yellow band shifting as a function of carbon concentration, suggesting a change in the behavior of carbon species as carbon content increases. With hybrid density functional theory we calculate the electrical and optical behavior of carbon centers containing multiple carbon impurities, which may arise in heavily doped material. We compare the behavior of these complexes to the isolated centers, and find that the dicarbon donor-acceptor (C Ga –C N ) complex is a candidate to explain the shift in the yellow luminescence peak. Tricarbon complexes have high formation energies and modest binding energies, and also give rise to optical transitions that are inconsistent with the observed spectra. We also identify the split dicarbon interstitial on the gallium site as a low-energy species with a large binding energy that may act to compensate carbon acceptors. Here, local vibrational modes are calculated for carbon impurity centers, and we compare these results to recent experiments. Dicarbon and tricarbon complexes involving C Ga and C N exhibit modes that are only slightly higher than the isolated species, while carbon interstitials and related complexes give rise to vibrational modes much higher than C Ga and C N .

36 MATERIALS SCIENCE↗
DOE OSTI2024

Diffuse scattering from dynamically compressed single-crystal zirconium following the pressure-induced α → ω phase transition

The prototypical α → ω phase transition in zirconium is an ideal test bed for our understanding of polymorphism under extreme loading conditions. After half a century of study, a consensus had emerged that the transition is realized via one of two distinct displacive mechanisms, depending on the nature of the compression path. However, recent dynamic-compression experiments equipped with diffraction diagnostics performed in the past few years have revealed new transition mechanisms, demonstrating that our understanding of the underlying atomistic dynamics and transition kinetics is in fact far from complete. We present classical molecular dynamics simulations of the α → ω phase transition in single-crystal zirconium shock compressed along the [0001] axis using a machine-learning-class potential. The transition is predicted to proceed primarily via a modified version of the two-stage Usikov-Zilberstein mechanism, whereby the high-pressure ω phase heterogeneously nucleates at boundaries between grains of an intermediate β phase. We further observe the fomentation of atomistic disorder at the junctions between β grains, leading to the formation of highly defective interstitial material between the ω grains. We directly compare synthetic x-ray diffraction patterns generated from our simulations with those obtained using femtosecond diffraction in recent dynamic-compression experiments, and show that the simulations produce the same unique, anisotropic diffuse scattering signal unlike any previously seen from an elemental metal. Our simulations suggest that the diffuse signal arises from a combination of thermal diffuse scattering, nanoparticlelike scattering from residual kinetically stabilized α and β grains, and scattering from interstitial defective structures. Published by the American Physical Society 2024

36 MATERIALS SCIENCE↗
DOE OSTI2013

Influence of N incorporation on persistent photoconductivity in GaAsN alloys

We examine the role of N environment on persistent photoconductivity (PPC) in GaAs 1-x N x films. For x > 0.006, significant PPC is observed at cryogenic temperatures, with the PPC magnitude increasing with increasing x due to an increase in the density of N-induced levels. Interestingly, rapid thermal annealing suppresses the PPC magnitude and reduces the N interstitial fraction; thus, the N-induced level is likely associated with N interstitials. PPC is attributed to the photogeneration of carriers from N-induced levels to the conduction-band edge, leading to a modified N molecular bond configuration. With the addition of thermal energy, the ground state configuration is restored; the N-induced level is then able to accept carriers and the conductivity decays to its preillumination value.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Diffusion of point defects in crystalline silicon using the kinetic activation-relaxation technique method

We study point-defect diffusion in crystalline silicon using the kinetic activation-relaxation technique (k-ART), an off-lattice kinetic Monte Carlo method with on-the-fly catalog building capabilities based on the activation-relaxation technique (ART nouveau), coupled to the standard Stillinger-Weber potential. We focus more particularly on the evolution of crystalline cells with one to four vacancies and one to four interstitials in order to provide a detailed picture of both the atomistic diffusion mechanisms and overall kinetics. We show formation energies, activation barriers for the ground state of all eight systems, and migration barriers for those systems that diffuse. Additionally, we characterize diffusion paths and special configurations such as dumbbell complex, di-interstitial (IV-pair+2I) superdiffuser, tetrahedral vacancy complex, and more. In conclusion, this study points to an unsuspected dynamical richness even for this apparently simple system that can only be uncovered by exhaustive and systematic approaches such as the kinetic activation-relaxation technique.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Competing spin density wave, collinear, and helical magnetism in Fe 1 + x Te

The Fe 1+x Te phase diagram consists of two distinct magnetic structures with collinear order present at low interstitial iron concentrations and a helical phase at large values of x with these phases separated by a Lifshitz point. In this paper, we use unpolarized single-crystal diffraction to confirm the helical phase for large interstitial iron concentrations and polarized single-crystal diffraction to demonstrate the collinear order for the iron-deficient side of the Fe 1+x Te phase diagram. Polarized neutron inelastic scattering shows that the fluctuations associated with this collinear order are predominately transverse at low-energy transfers, consistent with a localized magnetic moment picture. We then apply neutron inelastic scattering and polarization analysis to investigate the dynamics and structure near the boundary between collinear and helical orders in the Fe 1+x Te phase diagram. We first show that the phase separating collinear and helical orders is characterized by a spin density wave with a single propagation wave vector of (~0.45, 0, 0.5). We do not observe harmonics or the presence of a charge density wave. The magnetic fluctuations associated with this wave vector are different from the collinear phase, being strongly longitudinal in nature and correlated anisotropically in the (H,K) plane. The excitations preserve the C 4 symmetry of the lattice but display different widths in momentum along the two tetragonal directions at low-energy transfers. Finally, while the low-energy excitations and minimal magnetic phase diagram can be understood in terms of localized interactions, we suggest that the presence of the density wave phase implies the importance of electronic and orbital properties.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Muon spin relaxation study of spin dynamics in the extended kagome systems YBaCo 4 O 7 + δ ( δ = 0 , 0.1 )

Here, we present muon spin relaxation (μSR) measurements of the extended kagome systems YBaCo 4 O 7+δ (δ = 0,0.1), comprising two interpenetrating kagome sublattice of Co(I) 3+ (S = 3/2) and a triangle sublattice of Co(II) 2+ (S = 2). The zero- and longitudinal-field μ SR spectra of the stoichiometric compound YBaCo 4 O 7 unveil that the triangular subsystem orders at TN = 101 K. In contrast, the muon spin relaxation rate pertaining to the kagome subsystem shows persistent spin dynamics down to T = 20 K and then a sublinear decrease λ(T ) ~ T 0.66(5) on cooling towards T = 4 K. In addition, the introduction of interstitial oxygen (δ = 0.1) is found to drastically affect the magnetism. For the fast-cooling experiment (>10 K/min), YBaCo 4 O 7.1 enters a regime characterized by persistent spin dynamics below 90 K. For the slow-cooling experiment (1 K/min), evidence is obtained for the phase separation into interstitial oxygen-poor and oxygen-rich regions with distinct correlation times. The observed temperature, cooling rate, and oxygen content dependencies of spin dynamics are discussed in terms of a broad range of spin-spin correlation times, relying on a different degree of frustration between the kagome and triangle sublattices as well as of oxygen migration.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Stability and conductivity of cation- and anion-substituted LiBH 4 -based solid-state electrolytes

The high-temperature phase of LiBH 4 (HT-LiBH 4 ) exhibits a promisingly high lithium ion conductivity but is unstable at room temperature. We use density functional theory (DFT) calculations to investigate the stabilization effect of halogen and alkali cation/anion substitutions on HT-LiBH 4 as well the underlying mechanism for the high lithium ion conductivity. We find that increasing the substituent concentration enhances the stabilization of HT-LiBH 4 (i.e., the DFT energy difference between the low- and high-temperature forms of substituted LiBH 4 is reduced). Cation/anion substitution also leads to a higher Li defect (vacancy, interstitial, and Frenkel) formation energy, thereby reducing the Li defect (vacancy, interstitial, and Frenkel) concentrations. Using DFT migration barriers input into kinetic Monte Carlo simulations and the Materials INTerface (MINT) framework, here we calculate the room-temperature lithium ion conductivities for Li(BH 4 ) 1-x I x (x = 0.25 and 0.5) and Li 1-y K y BH 4 (y = 0.25). Our calculations suggest that the lower I concentration leads to a higher lithium ion conductivity of 5.7 x10 -3 S/cm compared with that of Li(BH 4 ) 0.5 I 0.5 (4.2 ×10 -5 S/cm) because of the formation of more Li-related defects. Based on our findings, we suggest that the stabilization of HT-LiBH 4 -based lithium ion conductors can be controlled by carefully tuning the cation/anion substituent concentrations to maximize the lithium ionic conductivities of the specific system.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Oxygen point defect accumulation in single-phase U O 2 + x

UO 2.07 was characterized using neutron total scattering in order to elucidate defect morphology in the low oxygen-to-metal regime (x < 0.125 for UO 2+x ). Data were collected at temperatures (600 and 1000 °C) coinciding with the single-phase UO 2+x region of the established phase diagram, and results were compared with data of stoichiometric UO 2 collected at near-identical temperatures. Experimental data were modeled and interpreted using a holistic approach employing a combination of analyses that characterized multiple spatial length scales. Preferential modeling of long-range atomic arrangements with Rietveld refinement suggests the existence of primarily monointerstitials in UO 2.07 , whereas preferential modeling of short-range atomic structures with small-box pair distribution function (PDF) refinement indicates the presence of defect clusters in UO 2.07 . Simultaneous modeling of multiple length scales using complementary reverse Monte Carlo (RMC) and molecular dynamics (MD) methods confirms that excess oxygen atoms in UO 2.07 exist as small defects, such as monointerstitials and di-interstitials. RMC and MD results agree with diffraction analysis but differ significantly from small-box PDF refinements, which may be related to a lack of intermediate- and long-range structural information gained from the small-box PDF refinement procedure. Employing a combination of analysis methods with varying length-scale sensitivities enabled more accurate assessment of the UO 2+x defect structure. Furthermore, our findings provide experimental support for previously predicted di-interstitial defect morphologies in UO 2+x that highly influence the accurate prediction of bulk physiochemical properties of UO 2+x , such as oxygen diffusivity.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2019

Phase-field model for diffusion-induced grain boundary migration: An application to battery electrodes

Diffusion-induced grain boundary migration is a phenomenon in which a grain boundary moves in response to the driving forces generated by diffusing solute species. For example, diffusing solute species change the atomic volume in the host material, either by filling a vacancy with a misfitting solute atom or by expanding host lattices through interstitial diffusion. These volume changes are inhomogeneous and are stored as elastic energy in the material that drives grain boundaries. In this paper, we introduce our previously developed Cahn-Hilliard–phase-field-crystal model (CH-PFC) as a computational tool to investigate diffusion-induced grain boundary migration in crystalline materials. This multiscale phase-field model couples the composition field of a diffusing species with the crystallographic texture of a host material. We apply the CH-PFC model to battery electrodes and investigate whether interstitial solute diffusion induces grain growth in FePO 4 /LiFePO 4 electrodes. To this end, we compute grain growth in 60 FePO 4 electrodes by conducting two parallel trials: In the first trial, we cycle the electrode and calculate diffusion-induced grain growth. In the second trial, we do not cycle the electrode and calculate curvature-driven grain growth. We find a statistically significant grain growth in the cycled electrodes and negligible grain growth in the noncycled electrodes. Altogether, we show that the CH-PFC model not only predicts electrode microstructures as a function of the Li composition, but also predicts the crystallographic features of an electrode during battery operation.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Interplay between defect transport and cation spin frustration in corundum-structured oxides

Despite the fundamental importance of mass transport, there is still a lack of knowledge regarding the mechanisms in many materials. In particular, how the magnetic spin structure interacts with migrating defects is unclear. In this work, using density functional theory to examine cation interstitial transport in antiferromagnetic corundum-structured oxides, we reveal an interplay between the migration of the interstitial and the magnetic structure of the oxide. The magnetic spin configuration impacts the migration energy of the migrating defect but, critically, the defect modifies the spin configuration. Thus, the two aspects change in concert to modify one another. This has profound implications for mass transport in magnetic materials.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Defect chemistry of Cr-B binary and Cr-Al-B MAB phases: Effects of covalently bonded B networks

Transition metal borides, which are three-dimensional (3D) layered materials containing covalently bonded B networks, have shown a number of excellent properties, such as radiation resistance and the ability to act as a diffusion barrier in integrated circuits. However, defect behavior, which controls many of the materials’ properties, has remained unknown in these materials. In this work, we investigate the effects of the B networks on the defect chemistry in both binary borides (CrB, Cr 3 B 4 , Cr 2 B 3 ) and ternary MAB phases (Cr 2 AlB 2 , Cr 3 AlB 4 , Cr 4 AlB 6 ) using first-principles calculations. We find that increasing the number of B rings in the structure leads to lower formation energies and higher concentrations of Frenkel pairs. The results can be explained by the fact that the strongest Cr-B bond is weakened when borides have more B rings, leading to a reduction in the formation energy of Cr and B vacancies. Also, the bonds associated with Cr atoms bonded within B rings are softer in structures containing more B rings, which allows Cr interstitials to form with a lower energy cost and contributes to an increase in the concentration of Cr interstitials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Native and radiation induced point defects in AlN and Sc-doped AlN

Herein, we have performed first-principles calculations to investigate the electronic structure, configurations, formation, and binding energies of native and radiation induced point defects in pristine and Sc-doped wurtzite AlN. For the native defects, the nitrogen vacancy has the lowest formation energy in p-type material while the aluminum vacancy has the lowest formation energy in n-type material which is consistent with the previous studies. Several interstitial defect structures were modeled for Al, N, and Sc atoms. The effects of charge state on their relative stability were investigated. The binding energy of Sc with point defects was calculated and found to be dependent strongly on the defect type and charge state. The results obtained are discussed in light of the possible Sc effects on the radiation damage evolution in AlN. Thus the attraction of Sc atom to N vacancy and both Al and N interstitials reduces their mobility and increases Frenkel pair recombination distance.

36 MATERIALS SCIENCE↗