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At least 793 records · Page 44

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DOE OSTI2024

Single-neutron adding on $^{34}$S

For this work, single-neutron adding data was collected in order to determine the distribution of the single-neutron strength of the 0ƒ 7/2 , 1p 3/2 , 1p 1/2 and 0ƒ 5/2 orbitals outside of Z = 16, N = 18, 34 S. The 34 S(d,p) 35 S reaction has been measured at 8 MeV/u to investigate cross sections to excited states in 35 S. Outgoing proton yields and momenta were analyzed by the Super-Enge Split-Pole Spectrograph in conjunction with the CeBrA demonstrator located at the John D. Fox Laboratory at Florida State University. Angular distributions were compared with Distorted Wave Born Approximation calculations in order to extract single-neutron spectroscopic overlaps. Spectroscopic overlaps and strengths were determined for states in S up through 6 MeV in excitation energy. Each orbital was observed to have fragmented strength where a single level carried the majority. The single-neutron centroids of the 0ƒ 7/2 , 1p 3/2 , 1p 1/2 and 0ƒ 5/2 orbitals were determined to be 2360$^{+90}_{-40}$ keV, 3280$^{+80}_{-50}$ keV, 4780$^{+60}_{-40}$ keV, and ≳7500 keV, respectively. A previous discrepancy in the literature with respect to the distribution of the neutron 1p 1/2 strength was resolved. The integration of the normalized spectroscopic strengths, up to 5.1 MeV in excitation energy, revealed fully-vacant occupancies for the 0ƒ 7/2 , 1p 3/2 , and 1p 1/2 orbitals, as expected. The spacing in the single-neutron energies highlighted a reduction in the traditional N = 28 shell-gap, relative to both the 1p spin-orbit energy difference (N = 32) and the lower limit on the N = 34 shell spacing.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

DOE OSTI2021

Insights from PPL's DERMS Implementation

PPL Electric Utilities’ Keystone Solar Future Project (KSFP) is part of the U.S. Department of Energy’s Office of Energy Efficiency and Renewables, Energy Enabling Extreme Real-time Grid Integration of Solar Energy (ENERGISE) grant. The three-year project, beginning in October, 2017, funded an innovative pilot program to develop and evaluate a technology platform and framework for managing high levels of distributed energy resources (DER), and improving future DER interconnection. The KSFP aimed to bridge gaps between existing and future technology, including Distributed Energy Resource Management Systems (DERMS), by monitoring, managing, and optimizing a system with high penetration of solar and other DER. Specifically, the project worked to make Demand Management Systems (DMS) applications, devices, and real-time communications technology DER-aware to allow for advanced applications for utility operations. Here, by installing and implementing a DERMS, project designers transformed how DERs interact with PPL’s distribution system, offering learnings and results worth sharing industry-wide.

Leader, Jared↗

DOE OSTI2021

GMLC Survey of Distributed Energy Resource Interconnection and Interoperability Standards

This document reports on the Grid Modernization Laboratory Consortium effort to identify gaps in standards for the interconnection and interoperability of distributed energy resources (DERs). The project extended a 3-year period from 2017 to 2019. Under the work plan, the team identified standards and test procedures related to interconnection and interoperability, grouped under the broad headings of their primary applicable technology domain: automotive, responsive loads, photovoltaic inverters, inverter-based energy storage, machine-based DERs, and microgrids. The team then conducted a gap analysis by comparing the current standards to the expected future requirements needed for specific grid services. Overall, gaps could be any activity needed to harmonize requirements among standards development organizations, minimize conflicting requirements among technology domains, or streamline conformance test procedures.

24 POWER TRANSMISSION AND DISTRIBUTION↗

DOE OSTI2020

Effects of intrinsic and atmospherically induced defects in narrow bandgap (FASnI 3 ) x (MAPbI 3 ) 1- x perovskite films and solar cells

Narrow band gap mixed tin (Sn) + lead (Pb) perovskites are vital as the bottom sub-cell absorber in high efficiency all-perovskite polycrystalline tandem solar cells. Here, we report on the impact of mixed cation composition and atmospheric exposure of perovskite films on sub-gap absorption in films and performance of solar cells based on narrow band gap mixed formamidinium (FA) + methylammonium (MA) and Sn+Pb halide perovskites, (FASnI 3 ) x (MAPbI 3 ) 1- x . Structural and optical properties of 0.3 ≤ x ≤ 0.8 (FASnI 3 ) x (MAPbI 3 ) 1- x perovskite thin film absorbers with band gaps ranging from 1.25 ( x = 0.6) to 1.34 eV (x = 0.3) are probed with and without atmospheric exposure. Urbach energy, which quantifies the amount of sub-gap absorption, is tracked for pristine perovskite films as a function of composition, with x = 0.6 and 0.3 demonstrating the lowest and highest Urbach energies of 23 and 36 meV, respectively. Films with x = 0.5 and 0.6 compositions show less degradation upon atmospheric exposure than higher or lower Sn-content films having greater sub-gap absorption. The corresponding solar cells based on the x = 0.6 absorber show the highest device performance. Despite having a low Urbach energy, higher Sn-content solar cells show reduced device performances as the amount of degradation via oxidation is the most substantial.

14 SOLAR ENERGY↗

DOE OSTI2022

Boron Phosphide Films by Reactive Sputtering: Searching for a P‐Type Transparent Conductor

Abstract With an indirect band gap in the visible and a direct band gap at a much higher energy, boron phosphide (BP) holds promise as an unconventional p‐type transparent conductor. This work reports on reactive sputtering of amorphous BP films, their partial crystallization in a P‐containing annealing atmosphere, and extrinsic doping by C and Si. The highest hole concentration to date for p‐type BP (5 × 10 20 cm −3 ) is achieved using C doping under B‐rich conditions. Furthermore, bipolar doping is confirmed to be feasible in BP. An anneal temperature of at least 1000 °C is necessary for crystallization and dopant activation. Hole mobilities are low and indirect optical transitions are stronger than that predicted by theory. Low crystalline quality probably plays a role in both cases. High figures of merit for transparent conductors might be achievable in extrinsically doped BP films with improved crystalline quality.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Non-standard interactions in SMEFT confronted with terrestrial neutrino experiments

The Standard Model Effective Field Theory (SMEFT) provides a systematic and model-independent framework to study neutrino non-standard interactions (NSIs). We study the constraining power of the on-going neutrino oscillation experiments T2K, NO ν A, Daya Bay, Double Chooz and RENO in the SMEFT framework. A full consideration of matching is provided between different effective field theories and the renormalization group running at different scales, filling the gap between the low-energy neutrino oscillation experiments and SMEFT at the UV scale. We first illustrate our method with a top- down approach in a simplified scalar leptoquark model, showing more stringent constraints from the neutrino oscillation experiments compared to collider studies. We then provide a bottom-up study on individual dimension-6 SMEFT operators and find NSIs in neutrino experiments already sensitive to new physics at ~20 TeV when the Wilson coefficients are fixed at unity. We also investigate the correlation among multiple operators at the UV scale and find it could change the constraints on SMEFT operators by several orders of magnitude compared with when only one operator is considered. Furthermore, we find that accelerator and reactor neutrino experiments are sensitive to different SMEFT operators, which highlights the complementarity of the two experiment types.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2023

Development of a Benchmark Eddy Flux Evapotranspiration Dataset for Evaluation of Satellite-Driven Evapotranspiration Models Over the CONUS

A large sample of ground-based evapotranspiration (ET) measurements made in the United States, primarily from eddy covariance systems, were post-processed to produce a benchmark ET dataset. The dataset was produced primarily to support the intercomparison and evaluation of the OpenET satellite-based remote sensing ET (RSET) models and could also be used to evaluate ET data from other models and approaches. OpenET is a web-based service that makes field-delineated and pixel-level ET estimates from well-established RSET models readily available to water managers, agricultural producers, and the public. The benchmark dataset is composed of flux and meteorological data from a variety of providers covering native vegetation and agricultural settings. Flux footprint predictions were developed for each station and included static flux footprints developed based on average wind direction and speed, as well as dynamic hourly footprints that were generated with a physically based model of upwind source area. The two footprint prediction methods were rigorously compared to evaluate their relative spatial coverage. Data from all sources were post-processed in a consistent and reproducible manner including data handling, gap-filling, temporal aggregation, and energy balance closure correction. The resulting dataset included 243,048 daily and 5,284 monthly ET values from 194 stations, with all data falling between 1995 and 2021. We assessed average daily energy imbalance using 172 flux sites with a total of 193,021 days of data, finding that overall turbulent fluxes were understated by about 12% on average relative to available energy. Multiple linear regression analyses indicated that daily average latent energy flux may be typically understated slightly more than sensible heat flux. This dataset was developed to provide a consistent reference to support evaluation of RSET data being developed for a wide range of applications related to water accounting and water resources management at field to watershed scales.

54 ENVIRONMENTAL SCIENCES↗

DOE OSTI2024

Oxidation Temperature-Dependent Electrochemical Doping of WO 3 Deposited via Atomic Layer Deposition

Silicon-based photoelectrochemical devices show promise for the performance of light-driven CO 2 reduction but suffer from instability under photoelectrochemical conditions relevant to CO 2 reduction. Coating silicon electrodes with thin layers of metal oxides has shown promise to passivate unstable silicon surfaces, and many different metal oxides can be deposited on silicon using various techniques. In this study, we investigate the fundamental photoelectrochemical performance of WO 3 -coated silicon photoelectrodes, which were generated by oxidation of W-metal films deposited via atomic layer deposition on both degenerately doped (nSi + ) and low-doped (pSi) silicon. Two different oxidation temperatures were investigated (400 and 600 °C), and it was found that the monoclinic phase of WO 3 predominates at both temperatures but that more grain boundaries are present in the 600 °C film. From X-ray photoelectron spectroscopy, the stoichiometry of both films was found to be 1:3 W:O, and low electron energy loss experiments indicate band gaps of 3.0 and 3.1 eV for 400 and 600 °C films, respectively. Cyclic voltammetry experiments showed that the electron transfer kinetics increased after continued redox cycling, particularly for the material produced at 400 °C. X-ray photoelectron spectra suggest that the observed increase in electrode conductivity is due to the formation of oxygen vacancies in the film. Electrochemical impedance spectroscopy indicated that charge transport through the films was impacted by the grain boundaries that formed during oxidation of the film. Photoelectrochemical studies on pSi/WO 3 electrodes were highly variable, only producing a photocurrent and photovoltage with some samples. Our best sample, formed at 400 °C, produced a photovoltage of 180 mV, which is lower than what has previously been reported for WO 3 -coated silicon (500 mV). We hypothesize that the variability in photoelectrochemical experiments arose from a roughened WSiO x interface that is generated during film preparation. WO 3 shows promise as a metal oxide coating for silicon, but our results suggest that formation of a high-quality interface between Si and WO 3 is vital for best performance.

Charge transfer↗

DOE OSTI2025

Unconventional gapping behaviour in a kagome superconductor

Determining the types of superconducting order in quantum materials is a challenge. This is especially true when several degrees of freedom contribute to the fermiology and when superconductivity competes with other symmetry-breaking orders. One example is the kagome-lattice superconductor CsV 3 Sb 5 , in which multiband superconductivity coexists with a charge order that substantially reduces the space group symmetries of the compound. Here we demonstrate the presence of two superconducting regimes in CsV 3 Sb 5 that are characterized by distinct transport and thermodynamic properties. Our results reveal a substantial quasiparticle weight in a high-temperature regime. At lower temperatures, this weight is removed through the formation of a second gap. We argue that the band with a gap opening at lower temperatures continues to host low-energy quasiparticles, possibly due to the nodal structure of the gap. Taken together, our results present evidence for band-selective superconductivity with uncoupled superconducting gaps.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2022

Degradation of Phonons in Disordered Moiré Superlattices

The elastic collective modes of a moiré superlattice arise not from vibrations of a rigid crystal but from the relative displacement between the constituent layers. Despite their similarity to acoustic phonons, these modes, called phasons, are not protected by any conservation law. Furthermore, we show that disorder in the relative orientation between the layers and thermal fluctuations associated with their sliding motion degrade the propagation of sound in the moiré superlattice. Specifically, the phason modes become overdamped at low energies and acquire a finite gap, which displays a universal dependence on the twist-angle variance. Thus, twist-angle inhomogeneity is manifested not only in the non-interacting electronic structure of moiré systems, but also in their phonon-like modes. More broadly, our results have important implications for the electronic properties of twisted moiré systems that are sensitive to the electron-phonon coupling.

2-dimensional systems↗

DOE OSTI2022

In situ x-ray photoelectron spectroscopy analysis of electrochemical interfaces in battery: Recent advances and remaining challenges

An in-depth understanding of charge transfer processes at the electrochemical interfaces is a critical knowledge gap impeding the design of energy storage materials. X-ray photoelectron spectroscopy plays an important role in analyzing electronic structures of heterogeneous interfaces, such as electrode-electrolyte interphases. Correspondingly, ex situ studies based on postmortem analysis of electrode materials using x-ray techniques are widely reported in the literature but often fail to capture intermediate and transient species, which are critical for a predictive understanding of the charge transfer process. The lack of extensive in situ/operando x-ray analysis of buried interfaces in energy storage systems can be mainly attributed to technical limitations, such as the requirement of high vacuum conditions. However, in the past decade, considerable efforts have been devoted to overcoming these technical barriers and enable investigation of the solid/solid and solid/liquid interfaces. This review catalogs some of the recent progresses and new experimental designs in the application of in situ and operando x-ray photoelectron spectroscopy toward characterizing interfacial processes and emergent properties, which can help build the design strategy for advanced batteries. The remaining challenges and future research directions are also discussed, as potential paths forward in this field.

Wi, Sungun↗

DOE OSTI2023

Enhancement of chiral edge currents in ($d$+1)-dimensional atomic Mott-band hybrid insulators

We consider the effect of a local interatomic repulsion on synthetic heterostructures where a discrete synthetic dimension is created by Raman processes on top of SU(N) S U ( N ) -symmetric two-dimensional lattice systems. At a filling of one fermion per site, increasing the interaction strength, the system is driven towards a Mott state which is adiabatically connected to a band insulator. The chiral currents associated with the synthetic magnetic field increase all the way to the Mott transition, where they reach the maximum value, and they remain finite in the whole insulating state. The transition towards the Mott-band insulator is associated with the opening of a gap within the low-energy quasiparticle peak, while a mean-field picture is recovered deep in the insulating state.

74 ATOMIC AND MOLECULAR PHYSICS↗

DOE OSTI2020

MOCVD Growth and Characterization of Wide Bandgap ZnGeN 2 Thin Films

ZnGeN 2 is a wide bandgap material having less than 0.1% lattice mismatch with GaN and bandgap within few percent of that of GaN. Based on the first principle calculations, the valence band of ZnGeN 2 is situated ~1.4 eV above that of GaN at the heterointerface. Such a staggered band alignment between two closely lattice matched materials has already been demonstrated promising for novel optoelectronic device designs, for example, high efficiency blue and green light emitting diodes. However, the research on ZnGeN 2 is yet to pass the inceptive period. We report on the growth of single crystalline ZnGeN 2 films using metalorganic chemical vapor deposition and investigation on the crystalline, optical, electrical properties. Diethylzinc (DEZn), germane (GeH 4 ) and ammonia were used as the precursors for Zn, Ge and N, respectively. Films were grown on GaN and sapphire substrates. The Zn/Ge atomic ratio in the films determined from energy dispersive X-ray spectroscopy was found to decrease with increase in growth temperature but to increase with increase in pressure and DEZn/GeH 4 molar flow rate ratio. The X-ray diffraction (XRD) 2θ-ω spectra of the single crystalline ZnGeN 2 films resembled those of orthorhombic (perfectly ordered cations) or distorted wurtzite (disordered cations) polymorphs. High resolution scanning transmission electron microscopy imaging was used to further investigate the crystalline quality and crystalline structure of the films. The single crystalline films on c-sapphire or GaN substrates were found to have planar surface from scanning electron micrographs while those on r-sapphire substrate had stepped surface. No near band edge peak but a broad peak at ~2.05 eV was observed in the photoluminescence (PL) spectra, which was attributed to the transitions involving deep level defects. The PL excitation spectra peaked around 3.4 eV, which is due to the enhanced absorption of photons having energy close to the band gap. The as grown films were found to be n-type with 10 18 – 10 19 cm -3 carrier densities and mobility up to 17 cm 2 /V·s. In the end, the advancement made in this work regarding the growth of ZnGeN 2 thin films is a footstep towards the understanding of the material itself and in turn, towards the implementation of ZnGeN 2 based novel device designs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2021

National Ignition Facility 192 beam 3w power sensor

NIF requires additional laser diagnostic capabilities to support existing missions and drive performance of the laser to higher powers and energies. There exists a current gap in laser power data on the facility due to the subset of beamlines that are measurement capable. Additionally, as NIF increases the radiation yield on target experiments, the performance of the current laser diagnostic 3w power sensor system has been steadily decreasing. The degradation of the current system is not well understood and needs to be characterized to facilitate any new system design.

42 ENGINEERING↗

DOE OSTI2024

Ventilation and Indoor Air Quality in Recently Constructed U.S. Homes: Measured Data From Select Southeastern States

Little data is available that quantifies IAQ or associates contaminant levels with air exchange in U.S. homes. To address this gap, the U.S. Department of Energy (DOE) Building America Program conducted a study to characterize IAQ in U.S. homes constructed since 2013, along with presence, functionality, and occupant use of control measures. Specific objectives of this study effort included: Measuring time-integrated concentrations and temporal profiles of established contaminants of concern; monitoring the use of ventilation equipment; and tracking activities that impact air pollutant emissions and removal processes in typical homes in various climate zones; Characterizing the prevalence, type, and installed performance of mechanical ventilation equipment in new homes; exploring regional variations in system designs and performance; Investigating associations between contaminant levels and the presence of control measures including whole-house mechanical ventilation (WHMV). The study engaged research teams to collect data at a regional level. This report introduces the study protocol and presents and discusses high-level results obtained from Florida Solar Energy Center (FSEC) data collection efforts in the southeastern U.S. states of Florida, Georgia, and South Carolina.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

DOE OSTI2024

A Scalable & Non-Destructive Characterization Strategy to Study Semiconductor/Dielectric Interfaces and Predict Wafer-Level Device Performance

The defect density present at the dielectric-semiconductor interface in an MOS structure directly influences the channel carrier characteristics in semiconductor devices, especially in wide bandgap material systems used in power devices. While these trap defects are typically quantified through electrical characterization of MOS-capacitor test structures, this treatment offers very little insight into the physical nature of interface defects. Such shortcomings demand a physical characterization strategy to guide fabrication optimization. X-ray photoelectron spectroscopy (XPS) is suggested as a viable technique to determine chemical data for dielectric interfaces formed using atomic layer deposition (ALD) on GaN substrates. Previously, 1-D XPS characterization has confirmed the presence of a Ga x O y interlayer between ALD dielectrics and the GaN substrate. In this work, XPS data is serially collected to form 2-D images of an ALD-Al 2 O 3 /GaN interface as a proof-of-concept experiment for in-situ XPS quality monitoring during ALD processing. The information provided by this work reveals some of the challenges for incorporating XPS characterization as an in-situ strategy during fabrication of GaN-based devices. Separately, electrical mapping of a 2-D array of ALD-Al 2 O 3 /GaN MOS-capacitor devices provide a means to quantify the spatial variations in interface quality across a single wafer. Physical characterization techniques, such as time-of-flight secondary ion mass spectroscopy, provide additional chemical information about the Al 2 O 3 /Ga x O y /GaN structure that complement the electrical mapping results. This analysis shows that a higher Ga x O y content correlates with higher interface state defects for trap energies deep in the band gap.

42 ENGINEERING↗

DOE OSTI2022

Classification of Photovoltaic Failures with Hidden Markov Modeling, an Unsupervised Statistical Approach

Failure detection methods are of significant interest for photovoltaic (PV) site operators to help reduce gaps between expected and observed energy generation. Current approaches for field-based fault detection, however, rely on multiple data inputs and can suffer from interpretability issues. In contrast, this work offers an unsupervised statistical approach that leverages hidden Markov models (HMM) to identify failures occurring at PV sites. Using performance index data from 104 sites across the United States, individual PV-HMM models are trained and evaluated for failure detection and transition probabilities. This analysis indicates that the trained PV-HMM models have the highest probability of remaining in their current state (87.1% to 93.5%), whereas the transition probability from normal to failure (6.5%) is lower than the transition from failure to normal (12.9%) states. A comparison of these patterns using both threshold levels and operations and maintenance (O&M) tickets indicate high precision rates of PV-HMMs (median = 82.4%) across all of the sites. Although additional work is needed to assess sensitivities, the PV-HMM methodology demonstrates significant potential for real-time failure detection as well as extensions into predictive maintenance capabilities for PV.

classification↗

NASA NTRS1972

Radiation-induced extrinsic photoconductivity in Li-doped Si.

Investigation of the effects of lithium on radiation-produced complexes having long-time stability by examining the localized energy levels in the forbidden gap which give rise to extrinsic photoconductivity. The levels are found to disappear and in some cases shift with annealing in the 100-450 C temperature range. Due to the complexity of the system and the present lack of adequate theory, no complete analysis of the data obtained could be made.

Fenimore, E.↗