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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 793 records · Page 44
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Influence of nuclear quantum effects on the electronic properties of amorphous carbon

We carry out quantum simulations to study the physical properties of diamond-like amorphous carbon by coupling first-principles molecular dynamics with a quantum thermostat, and we analyze multiple samples representative of different defective sites present in the disordered network. We show that quantum vibronic coupling is critical in determining the electronic properties of the system, in particular its electronic and mobility gaps, while it has a moderate influence on the structural properties. We find that despite localized electronic states near the Fermi level, the quantum nature of the nuclear motion leads to a renormalization of the electronic gap surprisingly similar to that found in crystalline diamond. We also discuss the notable influence of nuclear quantum effects on band-like and variable-hopping mechanisms contributing to electrical conduction. Our calculations indicate that methods often used to evaluate electron–phonon coupling in ordered solids are inaccurate to study the electronic and transport properties of amorphous semiconductors composed of light atoms.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2024

Observing the Surface Termination of LaScO 3 Perovskite Using Solid-State Nuclear Magnetic Resonance

Materials with well-defined surfaces are drawing increased attention for the design of bespoke catalysts and nanomaterials. Gaining a detailed understanding of the surfaces of these materials is an important challenge, which is often complicated by surface polymorphism and dynamic restructuring. We introduce the use of surface-enhanced NMR spectroscopy for the observation of such surfaces, focusing on LaScO 3 as an example. Here, we show that double-resonance NMR experiments correlating surface oxygen and probe molecules to the 139 La and 45 Sc nuclei at the surface reveal the material to be terminated by a ScO x monolayer. Surface-selective 17 O and 45 Sc NMR experiments further showed the material to be hydroxyl terminated and that the surface may be prone to dynamic restructuring as a result of moisture exposure. Perhaps most interestingly, surface-selective 139 La NMR experiments revealed the existence of previously undetected surface lanthanum defects, suggesting that surface-enhanced NMR may be useful as a guide in the synthesis of defect-free surfaces in the design of various nanomaterials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Large-scale integration of artificial atoms in hybrid photonic circuits

A central challenge in developing quantum computers and long-range quantum networks is the distribution of entanglement across many individually controllable qubits. Colour centres in diamond have emerged as leading solid-state ‘artificial atom’ qubits because they enable on-demand remote entanglement, coherent control of over ten ancillae qubits with minute-long coherence times and memory-enhanced quantum communication. A critical next step is to integrate large numbers of artificial atoms with photonic architectures to enable large-scale quantum information processing systems. So far, these efforts have been stymied by qubit inhomogeneities, low device yield and complex device requirements. Here we introduce a process for the high-yield heterogeneous integration of ‘quantum microchiplets’—diamond waveguide arrays containing highly coherent colour centres—on a photonic integrated circuit (PIC). We use this process to realize a 128-channel, defect-free array of germanium-vacancy and silicon-vacancy colour centres in an aluminium nitride PIC. Photoluminescence spectroscopy reveals long-term, stable and narrow average optical linewidths of 54 megahertz (146 megahertz) for germanium-vacancy (silicon-vacancy) emitters, close to the lifetime-limited linewidth of 32 megahertz (93 megahertz). We show that inhomogeneities of individual colour centre optical transitions can be compensated in situ by integrated tuning over 50 gigahertz without linewidth degradation. The ability to assemble large numbers of nearly indistinguishable and tunable artificial atoms into phase-stable PICs marks a key step towards multiplexed quantum repeaters and general-purpose quantum processors

36 MATERIALS SCIENCE↗
NASA NTRS2013

Buckling Design and Analysis of a Payload Fairing One-Sixth Cylindrical Arc-Segment Panel

Design and analysis results are reported for a panel that is a 16th arc-segment of a full 33-ft diameter cylindrical barrel section of a payload fairing structure. Six such panels could be used to construct the fairing barrel, and, as such, compression buckling testing of a 16th arc-segment panel would serve as a validation test of the buckling analyses used to design the fairing panels. In this report, linear and nonlinear buckling analyses have been performed using finite element software for 16th arc-segment panels composed of aluminum honeycomb core with graphiteepoxy composite facesheets and an alternative fiber reinforced foam (FRF) composite sandwich design. The cross sections of both concepts were sized to represent realistic Space Launch Systems (SLS) Payload Fairing panels. Based on shell-based linear buckling analyses, smaller, more manageable buckling test panel dimensions were determined such that the panel would still be expected to buckle with a circumferential (as opposed to column-like) mode with significant separation between the first and second buckling modes. More detailed nonlinear buckling analyses were then conducted for honeycomb panels of various sizes using both Abaqus and ANSYS finite element codes, and for the smaller size panel, a solid-based finite element analysis was conducted. Finally, for the smaller size FRF panel, nonlinear buckling analysis was performed wherein geometric imperfections measured from an actual manufactured FRF were included. It was found that the measured imperfection did not significantly affect the panel's predicted buckling response

composite structures↗
NASA NTRSDate not supplied

Detached Melt and Vapor Growth of InI in SUBSA hardware

Indium iodide (InI) single crystals, grown by the Bridgman process, have shown a significant promise as room temperature detector material for X-rays and γ-rays due to the large, close to ideal, bandgap of Eg = 2 eV, and high electrical resistivity. Yet the transport properties of the charge and the detector performance remain inadequate. The Bridgman growth of semiconductor crystals in microgravity have typically resulted in partial dewetting and Marangoni convection, which disturbed the diffusion-controlled growth and produced nonuniform dopant distribution. However, unconfined or partially confined solidification drastically reduced the number of stress-induced defects compared to the confined growth in crucibles on Earth.The goal of the present investigation was to explore melt growth of a heavy metal halide in microgravity, focusing on dewetting, in order to improve the crystalline perfection, i.e., to reduce the number of stress-related defects. InI was chosen because it is non-toxic and has a low melting point of only 365 C (~150 C below the melting point of InSb, used in the SUBSA experiments in 2002). Furthermore, InI melts and evaporates congruently, making it suitable for both growth by directional solidification and growth from the vapor phase. In preparation for the flight experiments, ground-based experiments were conducted in the SUBSA ground unit, consisting of 4 melt growth and 2 vapor growth experiments. The crystals were grown by a gradient freeze method by lowering the setpoint of the furnace. The transparent section of the SUBSA furnace did not allow observations of the solid-liquid interface. Contrary to our expectations, the possible occurrence of dewetting during growth could not be observed. We will present i) the ampoule design and preparation, ii) the experiments conducted in the SUBSA ground unit, iii) the images obtained during the microgravity experiments and iv) the results of the characterization of the grown crystals and detector fabrication.

Crystal Growth↗
NASA NTRS2004

Temporal Treatment of a Thermal Response for Defect Depth Estimation

Transient thermography, which employs pulse surface heating of an inspected component followed by acquisition of the thermal decay stage, is gaining wider acceptance as a result of its remoteness and rapidness. Flaws in the component s material may induce a thermal contrast in surface thermograms. An important issue in transient thermography is estimating the depth of a subsurface flaw from the thermal response. This improves the quantitative ability of the thermal evaluation: from one scan it is possible to locate regions of anomalies in thickness (caused by corrosion) and estimate the implications of the flaw on the integrity of the structure. Our research focuses on thick composite aircraft components. A long square heating pulse and several minutes observation period are required to receive an adequate thermal response from such a component. Application of various time-related informative parameters of the thermal response for depth estimation is discussed. A three-dimensional finite difference model of heat propagation in solids in Cartesian coordinates is used to simulate the thermographic process. Typical physical properties of polymer graphite composites are assumed for the model.

Plotnikov, Y. A.↗
DOE OSTI2020

Evolution of lithium ordering with (de)-lithiation in β-LiVOPO 4 : insights through solid-state NMR and first principles DFT calculations

The lithium-ion battery cathode material β-VOPO 4 is capable of intercalating more than one Li ion per transition metal ion due to the accessibility of both the V 5+ /V 4+ and V 4+ /V 3+ redox couples at ~4.5 V and ~2.3 V vs. Li, respectively, giving a theoretical capacity greater than ~300 mA h g -1 . The ability to perform full and reversible two Li-ion intercalation in this material, however, has been a matter of debate and the poor crystallinity of the fully lithiated phase has thus far precluded its complete structural characterisation by conventional diffraction-based methods. In this work, 7 Li and 31 P NMR spectroscopy, in combination with first principles DFT calculations, indicate that chemical lithiation results in a single phase β-Li 2 VOPO 4 exhibiting a complex Li ordering scheme with lithium ions occupying multiple disordered environments. 2D NMR 7 Li correlation experiments were used to deduce the most likely Li ordering for the β-Li 2 VOPO 4 phase from amongst several DFT optimised structures. In contrast, electrochemically lithiated β-Li 2- x VOPO 4 discharged to 1.6 V exhibits, in addition to β-Li 2 VOPO 4 , a β-Li 1.5 VOPO 4 phase. Additionally, the existence of β-Li 1.5 VOPO 4 is not reflected in the flat galvanostatic charge and discharge curves nor is evident from diffraction-based methods due to the very close structural similarity between the β-Li 1.5 VOPO 4 phase and β-Li 2 VOPO 4 phases. We demonstrate that solid state NMR spectroscopy, in combination with DFT results, provides a powerful tool for identifying intermediate states formed during charge/discharge of these complex phosphates as these phases can be distinguished from the end member phases primarily by the nature of the lithium ordering.

25 ENERGY STORAGE↗
DOE OSTI2025

Machine-Learning-Guided Insights into Solid-Electrolyte Interphase Conductivity: Are Amorphous Lithium Fluorophosphates the Key?

Despite decades of study, the identity of the dominant Li + -conducting phase within the inorganic SEI of Li-ion batteries remains unresolved. While the mosaic model describes LiF/Li 2 O/Li 2 CO 3 nanocrystallites within a disordered matrix, these crystalline phases inherently offer limited ionic conductivity. Growing evidence suggests that interfaces, grain boundaries, and amorphous phases may instead host the primary fast-ion pathways. Using diffusion-based generative structure prediction and machine-learning interatomic potentials (MLIPs), we investigate lithium difluorophosphate (LiPO 2 F 2 ), a key mixed-anion decomposition product of phosphorus- and fluorine-containing electrolytes. We identify a stable crystalline polymorph and demonstrate that the amorphous counterpart is conductive, with projected room-temperature σ ≈ 0.18 mS cm –1 and E a ≈ 0.40 eV. Here, this enhancement stems from structural disorder flattening the Li site-energy landscape and a low formation energy for Li-interstitial defects, which supplies additional mobile carriers. We propose amorphous mixed-anion Li-P-O-F phases as a promising conducting medium in the SEI, offering a specific target for engineering improved battery interfaces.

Zhong, Peichen [University of California, Berkeley↗
DOE OSTI2020

Oxygen Affinity: The Missing Link Enabling Prediction of Proton Conductivities in Doped Barium Zirconates

Proton-conducting oxides, specifically doped barium zirconates, have garnered much attention as electrolytes for solid-state electrochemical devices operable at intermediate temperatures (400–600 °C). In chemical terms, hydration energy, E hyd , and proton–dopant association energy, E as , are two key parameters that determine whether an oxide exhibits fast proton conduction, but to date ab initio studies have for the most part studied each parameter separately, with no clear correlation with proton conductivity identified in either case. Here, we demonstrate that the oxygen affinity, E O.dopant , defined as the energy released when an oxide ion enters an oxygen vacancy close to a dopant atom, is the missing link between these two parameters and correlates well with experimental proton conductivities in doped barium zirconates. Ab initio calculations of point defects and their complexes in Sc-, In-, Lu-, Er-, Y-, Gd-, and Eu-doped barium zirconates are used to determine E hyd , E as , E O.dopant , and the hydrogen affinity, E H.host , of each system. These four energy terms are related by E hyd = E O.dopant + 2E H.host + 2E as . Complementary impedance spectroscopy measurements reveal that the stronger the calculated oxygen affinity of a system, the higher the proton conductivity at 350 °C. Although the proton trapping site is also an important factor, the results show that oxygen affinity is an excellent predictor of proton conductivity in these materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Electrochemical ion insertion from the atomic to the device scale

Electrochemical ion insertion involves coupled ion–electron transfer reactions, transport of guest species and redox of the host. The hosts are typically anisotropic solids with 2D conduction planes but can also be materials with 1D or isotropic transport pathways. These insertion compounds have traditionally been studied in the context of energy storage but also find extensive applications in electrocatalysis, optoelectronics and computing. Recent developments in operando, ultrafast and high-resolution characterization methods, as well as accurate theoretical simulation methods, have led to a renaissance in the understanding of ion-insertion compounds. In this Review, we present a unified framework for understanding insertion compounds across timescales and length scales ranging from atomic to device levels. Using graphite, transition metal dichalcogenides, layered oxides, oxyhydroxides and olivines as examples, we explore commonalities in these materials in terms of point defects, interfacial reactions and phase transformations. We illustrate similarities in the operating principles of various ion-insertion devices, ranging from batteries and electrocatalysts to electrochromics and thermal transistors, with the goal of unifying research across disciplinary boundaries.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Real-time insight into the multistage mechanism of nanoparticle exsolution from a perovskite host surface

In exsolution, nanoparticles form by emerging from oxide hosts by application of redox driving forces, leading to transformative advances in stability, activity, and efficiency over deposition techniques, and resulting in a wide range of new opportunities for catalytic, energy and net-zero-related technologies. However, the mechanism of exsolved nanoparticle nucleation and perovskite structural evolution, has, to date, remained unclear. Herein, we shed light on this elusive process by following in real time Ir nanoparticle emergence from a SrTiO 3 host oxide lattice, using in situ high-resolution electron microscopy in combination with computational simulations and machine learning analytics. We show that nucleation occurs via atom clustering, in tandem with host evolution, revealing the participation of surface defects and host lattice restructuring in trapping Ir atoms to initiate nanoparticle formation and growth. These insights provide a theoretical platform and practical recommendations to further the development of highly functional and broadly applicable exsolvable materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1984

Material growth and characterization for solid state devices

During the reporting period, InGaAs was grown on Fe-doped (semi-insulating) (100) InP substrates by current controlled liquid phase epitaxy (CCLPE) at 640 C and current densities of 2.5A sq/cm to 5 A/sq cm for periods from 5 to 30 minutes. Special efforts were made to reduce the background carrier concentration in the grown layers as much as possible. The best layers exhibited carrier concentrations in the mid-10 to the 15th power/cu cm range and up to 10,900 sq cm/V-sec room temperature mobility. InGaAsP quaternary layers of energy gap corresponding to wavelengths of approximately 1.5 microns and 1.3 microns were grown on (100) InP substrates by CCLPE. In the device fabrication area, work was directed toward processing MISFET's using InGaAs. SiO2, Si3N4 and Al2O3 were deposited by ion beam sputtering, electron beam evaporation and chemical vapor reaction on Si, GaAs, and InGaAs substrates. SiO2 and Si3N4 sputtered layers were found to possess a high density of pinhole defects that precluded capacitance-voltage analysis. Chemical vapor deposited Al2O3 layers on Si, GaAs and InGaAs substrates also exhibited a large number of pinhole defects. This prevented achieving good MIS devices over most of the substrate surface area.

Stefanakos, E. K.↗
DOE OSTI2025

Oxygen Defect Configurations in Single-Phase UO 2.15

Hyperstoichiometric UO 2.15 was characterized by neutron total scattering at high temperature in the single-phase UO 2+x region of the U/O phase diagram. The diffraction data confirmed a single-phase fluorite structure at high temperature. Analysis of the short-range data showed that the same structural model does not fit the pair distribution functions well. Instead, structural models containing specific configurations of oxygen defect clusters best represent the local atomic arrangement. In conclusion, prevalent defect clusters previously proposed were fit to the experimental data, and moderately distorted oxygen cuboctahedra hypothesized by recent molecular dynamics simulations fit the data most accurately.

neutron pair-distribution function analysis↗
DOE OSTI2021

Interfacial stabilization for inverted perovskite solar cells with long-term stability

Perovskite solar cells (PSCs) commonly exhibit significant performance degradation due to ion migration through the top charge transport layer and ultimately metal electrode corrosion. Here, we demonstrate an interfacial management strategy using a boron chloride subphthalocyanine (Cl 6 SubPc)/fullerene electron-transport layer, which not only passivates the interfacial defects in the perovskite, but also suppresses halide diffusion as evidenced by multiple techniques, including visual element mapping by electron energy loss spectroscopy. As a result, we obtain inverted PSCs with an efficiency of 22.0% (21.3% certified), shelf life of 7000 h, Τ 80 of 816 h under damp heat stress (compared to less than 20 h without Cl 6 SubPc), and initial performance retention of 98% after 2000 h at 80 °C in inert environment, 90% after 2034 h of illumination and maximum power point tracking in ambient for encapsulated devices and 95% after 1272 h outdoor testing ISOS-O-1. Our strategy and results pave a new way to move PSCs forward to their potential commercialization solidly.

14 SOLAR ENERGY↗
DOE OSTI2022

Intrinsic (Trap‐Free) Transistors Based on Epitaxial Single‐Crystal Perovskites

Abstract The first experimental realization of the intrinsic (not dominated by defects) charge conduction regime in lead‐halide perovskite field‐effect transistors (FETs) is reported. The advance is enabled by: i) a new vapor‐phase epitaxy technique that results in large‐area single‐crystalline cesium lead bromide (CsPbBr 3 ) films with excellent structural and surface properties, including atomically flat surface morphology, essentially free from defects and traps at the level relevant to device operation; ii) an extensive materials analysis of these films using a variety of thin‐film and surface probes certifying the chemical and structural quality of the material; and iii) the fabrication of nearly ideal (trap‐free) FETs with characteristics superior to any reported to date. These devices allow the investigation of the intrinsic FET and (gated) Hall‐effect carrier mobilities as functions of temperature. The intrinsic mobility is found to increase on cooling from ≈30 cm 2 V −1 s −1 at room temperature to ≈250 cm 2 V −1 s −1 at 50 K, revealing a band transport limited by phonon scattering. Establishing the intrinsic (phonon‐limited) mobility provides a solid test for theoretical descriptions of carrier transport in perovskites, reveals basic limits to the technology, and points to a path for future high‐performance perovskite electronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2022

High-Mobility Hole Transport in Single-Grain PbSe Quantum Dot Superlattice Transistors

Epitaxially-fused superlattices of colloidal quantum dots (QD epi-SLs) may exhibit electronic minibands and high-mobility charge transport, but electrical measurements of epi-SLs have been limited to large-area, polycrystalline samples in which superlattice grain boundaries and intragrain defects suppress/obscure miniband effects. Systematic measurements of charge transport in individual, highly-ordered epi-SL grains would facilitate the study of minibands in QD films. Here, we demonstrate the air-free fabrication of microscale field-effect transistors (μ-FETs) with channels consisting of single PbSe QD epi-SL grains (2–7 μm channel dimensions) and analyze charge transport in these single-grain devices. The eight devices studied show p-channel or ambipolar transport with a hole mobility as high as 3.5 cm 2 V –1 s –1 at 290 K and 6.5 cm 2 V –1 s –1 at 170–220 K, one order of magnitude larger than that of previous QD solids. The mobility peaks at 150–220 K, but device hysteresis at higher temperatures makes the true mobility–temperature curve uncertain and evidence for miniband transport inconclusive.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS2006

A Model Study of the Thermal Evolution of Astrophysical Ices

We address the question of the evolution of ices that have been exposed to radiation from stellar sources and cosmic rays. We studied in the laboratory the thermal evolution of a model ice sample: a mixture of water, hydrogen peroxide, dioxygen, and ozone produced by irradiating solid H2O2 with 50 keV H(+) at 17 K. The changes in composition and release of volatiles during warming to 200 K were monitored by infrared spectroscopy, mass spectrometry, and microbalance techniques. We find evidence for voids in the water component from the infrared bands due to dangling H bonds. The absorption from these bands increases during heating and can be observed at temperatures as high as approx. 155 K. More O2 is stored in the radiolyzed film than can be retained by codeposition of O2 and H2O. This O2 remains trapped until approx. 155 K, where it desorbs in an outburst as water ice crystallizes. Warming of the ice also drastically decreases the intrinsic absorbance of O2 by annealing defects in the ice. We also observe loss of O3 in two stages during heating, which correlates with desorption and possibly chemical reactions with radicals stored in the ice, triggered by the temperature increase.

Loeffler, M. J.↗
DOE OSTI2025

Synthesizing intermetallic thermoelectric materials using metal flux growth method

With zero energy poverty by 2050 goals, exploring innovative energy technologies is essential. Thermoelectric materials (TEMs) have the potential to harness waste heat and convert it to electricity (e.g., for spacecraft power, sensors, and cryogenic cooling). Two limitations of thermoelectric compounds are their low efficiency and limited pool of materials. Optimizing the efficiency of TEMs is challenging due to the interdependent relationship between electrical and thermal conductivity. A deeper understanding of electronic properties and lattice thermal conductivity is necessary to “understand, predict and ultimately control” the thermoelectric properties of TEMs. Understanding the influence of light-atom-doping and intrinsic defects on the electronic properties of the f-element containing TEMs are important questions that need to be answered to design and synthesize TEMs with optimal parameters. The purpose of this work is to understand how doping f-element based TEMs with light elements, such as carbon and boron, would impact the crystal structure, bond lengths, band gaps, and thermoelectric characteristics. High-quality f¬-element containing intermetallic single crystals are grown in metal flux media. In molten metal flux growth method, one or more low-melting metals such as aluminum, gallium, tin, and bismuth are used in excess as the reaction medium. As these are solution-state reactions, we can use lower temperatures than solid-state reactions and isolate the kinetic products instead of the thermodynamically stable compound. Then these are characterized using X-ray diffraction, scanning electron microscopy, energy dispersive spectroscopy, magnetization, electrical and thermal conductivities, and thermoelectric power.

37 - INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL C↗