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At least 793 records · Page 44
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Design and Commissioning of a Deuterium-Tritium Gas Delivery System for Muon Catalyzed Fusion in a Diamond Anvil Cell

We report the design, commissioning, and operation of deuterium-deuterium (DD) and deuterium-tritium (DT) gas delivery systems developed to load a diamond anvil cell (DAC) beam target for muon-catalyzed fusion (muCF). The DAC approach enables DT fuel to be compressed to GPa pressures at more than twice the liquid density and heated from cryogenic temperatures through 500 K, opening access to a substantially expanded parameter range for muCF kinetics and yield measurements. In this approach, DT is cryo-condensed to a liquid in a minichamber and then compressed in the DAC using a helium-driven pneumatic membrane, achieving high pressures in a millimeter-scale DT sample volume. A DD gas delivery system was designed and used to validate the experimental apparatus, measure the gas quantities needed for filling, develop operational experience, and collect kinetics and yield data with DD targets. The DT gas delivery system adds tritium-specific capabilities for inventory minimization, secondary containment, and activity monitoring. The DT system integrates depleted uranium storage beds and a liquid helium cryogenic condenser used for pressure building and cryopumping. High-purity delivery is provided by a rapid-response palladium permeator. The system is housed in a helium-atmosphere glovebox held at negative pressure with continuous cleanup. We present the process and instrumentation design, a failure modes and effects analysis (FMEA), and data from the experiment's in situ Raman spectrometer, which provides direct confirmation of target loading and composition through the optically clear diamond anvils. The 2024 and 2025 DT campaigns achieved repeatable target fills and operation with no measurable tritium releases to the stack, demonstrating safe, high-purity DT loading at novel density-temperature conditions for muCF studies.

Koukina, Elena [Acceleron Fusion]↗
NASA NTRS2003

Reliable Transport over SpaceWire for James Webb Space Telescope (JWST) Focal Plane Electronics (FPE) Network

NASA's James Webb Space Telescope (JWST) faces difficult technical and budgetary challenges to overcome before it is scheduled launch in 2010. The Integrated Science Instrument Module (ISIM), shares these challenges. The major challenge addressed in this paper is the data network used to collect, process, compresses and store Infrared data. A total of 114 Mbps of raw information must be collected from 19 sources and delivered to the two redundant data processing units across a twenty meter deployed thermally restricted interface. Further data must be transferred to the solid-state recorder and the spacecraft. The JWST detectors are kept at cryogenic temperatures to obtain the sensitivity necessary to measure faint energy sources. The Focal Plane Electronics (FPE) that sample the detector, generate packets from the samples, and transmit these packets to the processing electronics must dissipate little power in order to help keep the detectors at these cold temperatures. Separating the low powered front-end electronics from the higher-powered processing electronics, and using a simple high-speed protocol to transmit the detector data minimize the power dissipation near the detectors. Low Voltage Differential Signaling (LVDS) drivers were considered an obvious choice for physical layer because of their high speed and low power. The mechanical restriction on the number cables across the thermal interface force the Image packets to be concentrated upon two high-speed links. These links connect the many image packet sources, Focal Plane Electronics (FPE), located near the cryogenic detectors to the processing electronics on the spacecraft structure. From 12 to 10,000 seconds of raw data are processed to make up an image, various algorithms integrate the pixel data Loss of commands to configure the detectors as well as the loss of science data itself may cause inefficiency in the use of the telescope that are unacceptable given the high cost of the observatory. This combination of requirements necessitates a redundant, fault tolerant, high- speed, low mass, low power network with a low Bit error Rate(1E-9- 1E-12). The ISIM systems team performed many studies of the various network architectures that meeting these requirements. The architecture selected uses the Spacewire protocol, with the addition of a new transport and network layer added to implement end-to-end reliable transport. The network and reliable transport mechanism must be implemented in hardware because of the high average information rate and the restriction on the ability of the detectors to buffer data due to power and size restrictions. This network and transport mechanism was designed to be compatible with existing Spacewire links and routers so that existing equipment and designs may be leveraged upon. The transport layer specification is being coordinated with European Space Agency (ESA), Spacewire Working Group and the Consultative Committee for Space Data System (CCSDS) PlK Standard Onboard Interface (SOIF) panel, with the intent of developing a standard for reliable transport for Spacewire. Changes to the protocol presented are likely since negotiations are ongoing with these groups. A block of RTL VHDL that implements a multi-port Spacewire router with an external user interface will be developed and integrated with an existing Spacewire Link design. The external user interface will be the local interface that sources and sinks packets onto and off of the network (Figure 3). The external user interface implements the network and transport layer and handles acknowledgements and re-tries of packets for reliable transport over the network. Because the design is written in RTL, it may be ported to any technology but will initially be targeted to the new Actel Accelerator series (AX) part. Each link will run at 160 Mbps and the power will be about 0.165 Watt per link worst case in the Actel AX.

Rakow, Glenn↗
NASA NTRS2024

Development of Cryogenic Phase Change Materials for Lunar Sample Return

One of the scientific goals of NASA’s Artemis missions is to return regolith samples from the lunar surface. To maintain scientific integrity of these samples, including any volatiles that may exist, cryogenic stowage is desired. FROSTE (Frozen Return Of Samples To Earth) is the element of the Moon to Mars architecture that is tasked with developing and advancing concepts related to this goal. Both active and passive solutions are being considered, but active solutions (cryo-coolers) have high mass and cost penalties. Phase change materials (PCMs) are commonly used as passive thermal management solutions, particularly for sensitive scientific samples. However, there are currently no PCMs capable of providing cooling at the cryogenic temperatures needed to enable lunar sample return with volatiles intact (<120 K). FROSTE has identified two possible candidate materials that could fill this gap. Testing is required to verify the thermal performance of these materials, as well as gain experience with their handling characteristics. We are conducting this testing at the Marshall Space Flight Center’s Space Environmental Effects laboratory, in vacuum, with liquid nitrogen providing cooling ability below the freezing point of the materials. In this talk, we will present an overview of the FROSTE program element and share results from the initial development testing of two cryogenic phase change materials.

phase change material↗
DOE OSTI2026

Analog-to-digital converter based on voltage-controlled superconducting devices

The increasing demand for cryogenic electronics in superconducting and quantum computing systems calls for ultra-energy-efficient data conversion architectures that remain functional at deep cryogenic temperatures. Here, in this work, we present the first design of a voltage-controlled superconducting flash analog-to-digital converter (ADC) based on a voltage-controlled quantum-enhanced Josephson junction field-effect transistor (JJFET). Exploiting its strong gate tunability and transistor-like behavior, the JJFET offers a scalable alternative to conventional current-controlled superconducting devices while aligning naturally with CMOS-style design methodologies. Building on our previously developed Verilog-A compact model calibrated to experimental data, we design and simulate a three-bit JJFET-based flash ADC targeted for integration within cryogenic control and readout circuitry in quantum computing. The core comparator block is realized through careful bias current selection and augmented with a three-terminal nanocryotron to precisely define reference voltages. Cascaded JJFET comparators ensure robust voltage gain, cascadability, and logic-level restoration across stages. Simulation results demonstrate accurate quantization behavior with ultra-low power dissipation, underscoring the feasibility of voltage-driven superconducting mixed-signal circuits. This work establishes a critical step toward unifying superconducting logic and data conversion, paving the way for scalable cryogenic architectures in quantum–classical co-processors, low-power artificial intelligence accelerators, and next-generation energy-constrained computing platforms.

Analog-to-digital converter↗
NASA NTRS1996

Comments on SEE: Comparative Advantages and and Experimental Consequences

The Satellite Energy Exchange experiment measures the periodic, near-miss encounters between a sheppard satellite and a small test body (satellite) in approximately the same orbit about a primary. Several important experimental requirements have been chosen to enhance capabilities: (a) The satellite be flown in a sun-synchronous orbit at an altitude of about 1350 Km, (b) Passive temperature system stabilized by spacecraft axial rotation with sunshade baffles at the end of the spacecraft, (c) Test bodies with different material composition be available for experiments, (d) The containment spacecraft fly about the sheppard mass in a zero-g environment whereas the test bodies, experience average zero-g environment over an orbital period, (e) Primary attitude and station-keeping uses magnetic field alignment plus micro-Newton thrusters such as Field Emission Electric Propulsion, and (f) Very low power (nW) laser tracking systems minimize impulse delivered to test bodies. With the above conditions, SEE has the capabilities: (1) Long duration (several years life-time) flight experiment (2) Long-term, active (with historical time record), self-calibration of satellite mass distribution (capsule geodesy) over lifetime of the spacecraft. (3) Novel passive thermal stabilization systems designed to attain cryogenic temperatures around 78K. (4) Novel spacecraft stabilization systems. (5) Ability to measure G to 1 part in 10(exp 6-7) depending on ultimate duration of experiment. (6) Ability to place limits on both temporal and spacial variations on G. (7) Ability to set experimental limits on the Post Newtonian parameters (PPN) alpha(2) and zeta(2). (8) Ability to measure (or place limits on) the non Einsteinian eccentricity of the Earth-Sun system (and the parameter alpha(1)) for long duration flight. (9) Ability to measure Delta((dot)-G)/G to 1 part in 10(exp 12-13). The MiniSTEP, competes in a limited way with Project SEE. It is designed to improve the measurement of the equivalence principle by seven orders of magnitude using active, low temperature (1.8 K) cooling for SQUID based, differential superconducting circuits. The experiment consists of a small cylinder concentrically located within a larger cylinder at its null gravitational point. The satellite is operated in zero-g mode using four differential accelerometers consisting to two test bodies of different material composition. The SQUIDS are needed to measure test body motion to precisions of 10(exp -18) over a four orbit period. The entire satellite moves in a very precise zero-g mode since the accelerometers are rigidly attached to the satellite. This limits the experiment to an approximately six month due to limitations on helium storage used in cryogenic cooling and thrust control to maintain the zero-g operation.

Smalley, Larry L.↗
NASA NTRS1989

Molecular beam epitaxial growth of high-quality InSb on InP and GaAs substrates

Epitaxial layers of InSb were grown on InP and GaAs substrates by molecular beam epitaxy. The dependence of the epilayer quality on flux ratio, J sub Sb4/J sub In, was studied. Deviation from an optimum value of J sub Sb4/J sub In (approx. 2) during growth led to deterioration in the surface morphology and the electrical and crystalline qualities of the films. Room temperature electron mobilities as high as 70,000 and 53,000 sq cm /V-s were measured in InSb layers grown on InP and GaAs substrates, respectively. Unlike the previous results, the conductivity in these films is n-type even at T = 13 K, and no degradation of the electron mobility due to the high density of dislocations was observed. The measured electron mobilities (and carrier concentrations) at 77 K in InSb layers grown on InP and GaAs substrates are 110,000 sq cm/V-s (3 x 10(15) cm(-3)) and 55,000 sq cm/V-s (4.95 x 10(15) cm(-3)), respectively, suggesting their application to electronic devices at cryogenic temperatures.

Oh, J. E.↗
NASA NTRS1989

Molecular beam epitaxial growth of high-quality InSb on InP and GaAs substrates

Epitaxial layers of InSb were grown on InP and GaAs substrates by molecular beam epitaxy. The dependence of the epilayer quality on flux ratio, J sub Sb4/J sub In, was studied. Deviation from an optimum value of J sub Sb4/J sub In (approx. 2) during growth led to deterioration in the surface morphology and the electrical and crystalline qualities of the films. Room temperature electron mobilities as high as 70,000 and 53,000 sq cm /V-s were measured in InSb layers grown on InP and GaAs substrates, respectively. Unlike the previous results, the conductivity in these films is n-type even at T = 13 K, and no degradation of the electron mobility due to the high density of dislocations was observed. The measured electron mobilities (and carrier concentrations) at 77 K in InSb layers grown on InP and GaAs substrates are 110,000 sq cm/V-s (3 x 10(15) cm(-3)) and 55,000 sq cm/V-s (4.95 x 10(15) cm(-3)), respectively, suggesting their application to electronic devices at cryogenic temperatures.

Oh, J. E.↗
NASA NTRS2012

Feasibility and Definition of a Lunar Polar Volatiles Prospecting Mission

The recent Lunar Crater Observing and Sensing Satellite (LCROSS) mission has provided evidence for significant amounts of cold trapped volatiles in Cabeus crater near the Moon's south pole. Moreover, LRO/Diviner measurements of extremely cold lunar polar surface temperatures imply that volatiles can be stable outside or areas of strict permanent shadows. These discoveries suggest that orbital neutron spectrometer data point to extensive deposits at both lunar poles. The physical state, composition and distribution of these volatiles are key scientific issues that relate to source and emplacement mechanisms. These issues are also important for enabling lunar in situ resource utilization (ISRU). An assessment of the feasibility of cold-trapped volatile ISRU requires a priori information regarding the location, form, quantity, and potential for extraction of available resources. A robotic mission to a mostly shadowed but briefly .unlit location with suitable environmental conditions (e.g. short periods of oblique sunlight and subsurface cryogenic temperatures which permit volatile trapping) can help answer these scientific and exploration questions. Key parameters must be defined in order to identify suitable landing sites, plan surface operations, and achieve mission success. To address this need, we have conducted an initial study for a lunar polar volatile prospecting mission, assuming the use of a solar-powered robotic lander and rover. Here we present the mission concept, goals and objectives, and landing site selection analysis for a short-duration, landed, solar-powered mission to a potential hydrogen volatile-rich site.

Heldmann, Jennifer↗
NASA NTRS2013

Regenerable Sorbent for CO2 Removal

A durable, high-capacity regenerable sorbent can remove CO2 from the breathing loop under a Martian atmosphere. The system design allows near-ambient temperature operation, needs only a small temperature swing, and sorbent regeneration takes place at or above 8 torr, eliminating the potential for Martian atmosphere to leak into the regeneration bed and into the breathing loop. The physical adsorbent can be used in a metabolic, heat-driven TSA system to remove CO2 from the breathing loop of the astronaut and reject it to the Martian atmosphere. Two (or more) alternating sorbent beds continuously scrub and reject CO2 from the spacesuit ventilation loop. The sorbent beds are cycled, alternately absorbing CO2 from the vent loop and rejecting the adsorbed material into the environment at a high CO2 partial pressure (above 8 torr). The system does not need to run the adsorber at cryogenic temperatures, and uses a much smaller temperature swing. The sorbent removes CO2 via a weak chemical interaction. The interaction is strong enough to enable CO2 adsorption even at 3 to 7.6 torr. However, because the interaction between the surface adsorption sites and the CO2 is relatively weak, the heat input needed to regenerate the sorbent is much lower than that for chemical absorbents. The sorbent developed in this project could potentially find use in a large commercial market in the removal of CO2 emissions from coal-fired power plants, if regulations are put in place to curb carbon emissions from power plants.

Alptekin, Gokhan↗
DOE OSTI2021

Polarization-induced 2D hole gases in pseudomorphic undoped GaN/AlN heterostructures on single-crystal AlN substrates

A high-conductivity two-dimensional (2D) hole gas is the enabler of wide-bandgap p-channel transistors. Compared to commonly used AlN template substrates with high dislocation densities, the recently available single-crystal AlN substrates are promising to boost the speed and power handling capability of p-channel transistors based on GaN/AlN 2D hole gases (2DHGs) thanks to the much lower dislocation densities and the absence of thermal boundary resistance. Using plasma-assisted molecular beam epitaxy, we report the observation of polarization-induced high-density 2DHGs in undoped pseudomorphic GaN/AlN heterostructures on the single-crystal AlN substrates with high structural quality and atomic steps on the surface. The high-density 2DHG persists down to cryogenic temperatures with a record high mobility exceeding 280 cm 2 /V s and a density of 2.2 × 10 13 /cm 2 at 10 K. These results shed light on aspects of improving 2D hole mobilities and indicate significant potential of GaN/AlN 2DHG grown on bulk AlN substrates for future high performance wide-bandgap p-channel transistors.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Online monitoring the hydrolysis of uranium hexafluoride for intermediates by cryogenic layering and FTIR

Uranium hexafluoride (UF 6 ) is a commonly utilized material feedstock in uranium enrichment processes due to its high vapor pressure and ease of sublimation. When exposed to air, UF 6 undergoes spontaneous hydrolysis to form uranyl fluoride (UO 2 F 2 ) particulates which are utilized for the detection of undeclared nuclear activities by nuclear safeguards organizations. In this study, the kinetics of the hydrolysis reaction and how they relate to particle morphology of the product are still debated in the literature. Here, we report the direct, in situ observation of UF 6 reaction intermediates by cooling the reaction to cryogenic temperatures to significantly reduce the rate of hydrolysis. The reaction is then observable by Fourier transform infrared (FTIR) spectroscopy. The conversion of UF 6 to UOF 4 is observed as well as several other bands associated with possible long lived intermediate complexes. Chemometrics are used to further elucidate the reaction pathway from UF 6 to UO 2 F 2 .

38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEA↗
NASA NTRS1971

Investigation of the feasibility of developing low permeability polymeric films

The feasibility of reducing the gas permeability rate of Mylar and Kapton films without drastically effecting their flexibility characteristics at cryogenic temperatures was considered. This feasibility was established using a concept of diffusion bonding two layers of metallized films together forming a film-metal-film sandwich laminate. The permeability of kapton film to gaseous helium was reduced from a nominal ten = to the minus 9 power cc-mm/sq cm sec. cm Hg to ten to the minus 13 power cc-mm/ sq cm - sec. cm Hg with some values as low as ten to the minus 15 power cc - mm/sq cm m-sec - cm Hg being obtained. Similar reductions occurred in the liquid hydrogen permeability at -252 C. In the course of the program the permeability, flexibility and bond strength of plain, metalized and diffusion bond film were determined at +25 C, -195 C and -252 C. The cryogenic flexibility of Kapton film was reduced slightly due to the metallization process but no additional loss in flexibility resulted from the diffusion bonding process.

Hoggatt, J. T.↗
DOE OSTI2025

Field-resilient supercurrent diode in a multiferroic Josephson junction

The research on supercurrent diodes has surged rapidly due to their potential applications in electronic circuits at cryogenic temperatures. To unlock this functionality, it is essential to find supercurrent diodes that can work consistently at zero magnetic field and under ubiquitous stray fields generated in electronic circuits. However, a supercurrent diode with robust field tolerance is currently lacking. Here, we demonstrate a field-resilient supercurrent diode by incorporating a 2D multiferroic material into a Josephson junction, and observed a pronounced supercurrent diode effect at zero magnetic field. More importantly, the supercurrent rectification persists over a wide and bipolar magnetic field range beyond industrial standards for field tolerance. By theoretically modeling a multiferroic Josephson junction, we unveil that the interplay between spin-orbit coupling and multiferroicity underlies the unusual field resilience of the observed diode effect. This work introduces multiferroic Josephson junctions as a new field-resilient superconducting device for cryogenic electronics.

Yang, Hung-Yu [Univ. of California, Los Angeles, C↗
DOE OSTI2023

Simultaneous measurement of specific heat and thermal conductivity in pulsed magnetic fields

Here we report an experimental setup for simultaneously measuring specific heat and thermal conductivity in feedback-controlled pulsed magnetic fields of 50 ms duration at cryogenic temperatures. A stabilized magnetic field pulse obtained by the feedback control, which dramatically improves the thermal stability of the setup and sample, is used in combination with the flash method to obtain absolute values of thermal properties up to 37.2 T in the 22–16 K temperature range. We describe the experimental setup and demonstrate the performance of the present method with measurements on single-crystal samples of the geometrically frustrated quantum spin-dimer system SrCu 2 (BO 3 ) 2 . Our proof-of-principle results show excellent agreement with data taken using a standard steady-state method, confirming the validity and convenience of the present approach.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Mechanism of the Accelerated Water Formation Reaction under Interfacial Confinement

Subnanoscale spaces at the interface between weakly coupled thin films and their metal supports offer exciting opportunities for studying chemical reactions under confinement. Here, we investigated the kinetics of water formation (from hydrogen and chemisorbed oxygen) in the confined space at the interface between bilayer (BL) silica and a Ru(0001) support, compared to the reaction on the bare Ru(0001) surface. Ambient pressure X-ray photoelectron spectroscopy (AP-XPS) experiments were carried out at different temperatures at elevated pressures of H 2 to follow the reaction kinetics. The apparent activation energy at the BL-silica/Ru(0001) interface was found to be 0.38 eV lower than that on bare Ru(0001), consistent with a recent report by Prieto et al. (Angew. Chem., Int. Ed.2018, 57(28), 8749–8753) carried out at lower H 2 pressures using low-energy electron microscopy. Density functional theory calculations revealed that the rate-limiting step in the direct hydrogenation pathway on the Ru(0001) surface is the first hydrogen addition step (*H + *O ↔ *OH). The confinement at the BL-silica/Ru(0001) interface only marginally affects the energy barrier of the first hydrogen addition. Instead, it activates an alternative disproportionation reaction pathway (*H 2 O + *O ↔ 2*OH). On the bare Ru(0001) surface, the disproportionation pathway can only occur at cryogenic temperatures or under high water vapor pressures. However, the presence of the BL-silica increases the desorption barrier for water molecules at the interface. The increased residence time allows trapped water molecules to react with chemisorbed oxygen to produce two *OH per H 2 O with an activation energy 0.25 eV lower than that of the first hydrogen addition step. Finally, this work reveals the origin of the observed accelerated water formation reaction at the BL-silica/Ru(0001) interface in the low-temperature regime (T < 350 K) and points to a route to engineer chemical reaction pathways by leveraging subnanoscale confined spaces at metal–oxide interfaces.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Quantifying a partial polyamorphic transition in a cerium-based metallic glass during cooling

Cerium-based metallic glasses are prototype polyamorphous systems with pressure-induced polyamorphic transitions extensively reported. Cooling typically has a similar effect on materials as compression with regard to reducing volume. However, previous studies show dramatically different behavior of Ce-based metallic glasses between cooling and compression, whose origin remains unclear. Here, using in situ low-temperature synchrotron high-energy x-ray diffraction, the structural evolution of a Ce68Al10Cu20Co2 metallic glass is accurately determined and analyzed by a structure factor and a reduced pair distribution function (PDF) during cooling from 298 to 83 K. An unusually large linear thermal expansion coefficient is revealed, which is associated with both continuous but inconsistent structural changes between the two subpeaks of the first atomic shell in terms of average bond lengths and coordination numbers. These phenomena are suggested to be attributed to a gradual 4f electron delocalization of only a minimal amount (∼2.6% at 83 K) of Ce atoms by quantitative analysis of the PDF data. However, a previously expected global polymorphic transition from a low-density amorphous state to a high-density amorphous state with an abrupt volume collapse is not observed. Moreover, electrical resistivity also shows a continuous increase during cooling without any sharp change. It is clarified that cryogenic temperatures could facilitate but are not powerful enough alone to trigger a global polymorphic transition in the Ce68Al10Cu20Co2 metallic glass, suggesting a wide distribution of its local atomic environment.

Chen, Zhi↗
NASA NTRS2011

Miniature Sapphire Acoustic Resonator - MSAR

A room temperature sapphire acoustics resonator incorporated into an oscillator represents a possible opportunity to improve on quartz ultrastable oscillator (USO) performance, which has been a staple for NASA missions since the inception of spaceflight. Where quartz technology is very mature and shows a performance improvement of perhaps 1 dB/decade, these sapphire acoustic resonators when integrated with matured quartz electronics could achieve a frequency stability improvement of 10 dB or more. As quartz oscillators are an essential element of nearly all types of frequency standards and reference systems, the success of MSAR would advance the development of frequency standards and systems for both groundbased and flight-based projects. Current quartz oscillator technology is limited by quartz mechanical Q. With a possible improvement of more than x 10 Q with sapphire acoustic modes, the stability limit of current quartz oscillators may be improved tenfold, to 10(exp -14) at 1 second. The electromagnetic modes of sapphire that were previously developed at JPL require cryogenic temperatures to achieve the high Q levels needed to achieve this stability level. However sapphire fs acoustic modes, which have not been used before in a high-stability oscillator, indicate the required Q values (as high as Q = 10(exp 8)) may be achieved at room temperature in the kHz range. Even though sapphire is not piezoelectric, such a high Q should allow electrostatic excitation of the acoustic modes with a combination of DC and AC voltages across a small sapphire disk (approximately equal to l mm thick). The first evaluations under this task will test predictions of an estimated input impedance of 10 kilohms at Q = 10(exp 8), and explore the Q values that can be realized in a smaller resonator, which has not been previously tested for acoustic modes. This initial Q measurement and excitation demonstration can be viewed similar to a transducer converting electrical energy to mechanical energy and back. Such an electrostatic tweeter type excitation of a mechanical resonator will be tested at 5 MHz. Finite element calculation will be applied to resonator design for the desired resonator frequency and optimum configuration. The experiment consists of the sapphire resonator sandwiched between parallel electrodes. A DC+AC voltage can be applied to generate a force to act on a sapphire resonator. With the frequency of the AC voltage tuned to the sapphire resonator frequency, a resonant condition occurs and the sapphire Q can be measured with a high-frequency impedance analyzer. To achieve high Q values, many experimental factors such as vacuum seal, gas damping effects, charge buildup on the sapphire surface, heat dissipation, sapphire anchoring, and the sapphire mounting configuration will need attention. The effects of these parameters will be calculated and folded into the resonator design. It is envisioned that the initial test configuration would allow for movable electrodes to check gap spacing dependency and verify the input impedance prediction. Quartz oscillators are key components in nearly all ground- and space-based communication, tracking, and radio science applications. They play a key role as local oscillators for atomic frequency standards and serve as flywheel oscillators or to improve phase noise in high performance frequency and timing distribution systems. With ultra-stable performance from one to three seconds, an Earth-orbit or moon-based MSAR can enhance available performance options for spacecraft due to elimination of atmospheric path degradation.

Wang, Rabi T.↗
DOE OSTI2020

Measurements of a quantum bulk acoustic resonator using a superconducting qubit

Phonon modes at microwave frequencies can be cooled to their quantum ground state using conventional cryogenic refrigeration, providing a convenient way to study and manipulate quantum states at the single phonon level. Phonons are of particular interest because mechanical deformations can mediate interactions with a wide range of different quantum systems, including solid-state defects, superconducting qubits, and optical photons when using optomechanically active constructs. Phonons, thus, hold promise for quantum-focused applications as diverse as sensing, information processing, and communication. Here, we describe a piezoelectric quantum bulk acoustic resonator (QBAR) with a 4.88 GHz resonant frequency, which, at cryogenic temperatures, displays large electromechanical coupling strength combined with a high intrinsic mechanical quality factor, Q i ≈ 4.3 × 10 4 . Using a recently developed flip-chip technique, we couple this QBAR resonator to a superconducting qubit on a separate die and demonstrate the quantum control of the mechanics in the coupled system. Furthermore, this approach promises a facile and flexible experimental approach to quantum acoustics and hybrid quantum systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗