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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 793 records · Page 44
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Regenerative feedback resonant circuit

A regenerative feedback resonant circuit for measuring a transient response in a loop is disclosed. The circuit includes an amplifier for generating a signal in the loop. The circuit further includes a resonator having a resonant cavity and a material located within the cavity. The signal sent into the resonator produces a resonant frequency. A variation of the resonant frequency due to perturbations in electromagnetic properties of the material is measured.

42 ENGINEERING↗
DOE OSTI2016

Circuits and methods for determination and control of signal transition rates in electrochemical cells

A charge/discharge input is for respectively supplying charge to, or drawing charge from, an electrochemical cell. A transition modifying circuit is coupled between the charge/discharge input and a terminal of the electrochemical cell and includes at least one of an inductive constituent, a capacitive constituent and a resistive constituent selected to generate an adjusted transition rate on the terminal sufficient to reduce degradation of a charge capacity characteristic of the electrochemical cell. A method determines characteristics of the transition modifying circuit. A degradation characteristic of the electrochemical cell is analyzed relative to a transition rate of the charge/discharge input applied to the electrochemical cell. An adjusted transition rate is determined for a signal to be applied to the electrochemical cell that will reduce the degradation characteristic. At least one of an inductance, a capacitance, and a resistance is selected for the transition modifying circuit to achieve the adjusted transition rate.

25 ENERGY STORAGE↗
DOE OSTI2017

Induction heating using induction coils in series-parallel circuits

A part is inductively heated by multiple, self-regulating induction coil circuits having susceptors, coupled together in parallel and in series with an AC power supply. Each of the circuits includes a tuning capacitor that tunes the circuit to resonate at the frequency of AC power supply.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2018

Compensating for parasitic voltage drops in circuit arrays

Various technologies for improving uniformity of operation of elements in an array circuit are described herein. In an exemplary embodiment, a plurality of resistive elements are incorporated into an array circuit such that voltages developed across any two elements is substantially the same when an equal voltage is applied to energize the elements. In a crossbar array circuit that comprises a plurality of elements arranged in rows and columns, the resistance of each of the resistive elements is based upon a row or column to which the resistive element is connected.

42 ENGINEERING↗
DOE OSTI2019

Integrated circuit authentication from a die material measurement

The various technologies presented herein relate to measuring a signal generated by a die-based test circuit incorporated into an IC, and utilizing the measured signal to authenticate the IC. The signal can be based upon a sensor response generated by the test circuit fabricated into the die, wherein the sensor response is based upon a property of the die material. The signal can be compared with a reference value obtained from one or more test circuit(s) respectively located on one or more reference dies, wherein the reference dies are respectively cut from different wafers, and the location at which the reference dies were cut is known. If the measured signal matches the reference value, the die is deemed to be from the same cut location as the dies from which the reference value was obtained. If the measured signal does not match the reference value, the die is not authenticated.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

Integrated circuit authentication from a die material measurement

The various technologies presented herein relate to measuring a signal generated by a die-based test circuit incorporated into an IC and utilizing the measured signal to authenticate the IC. The signal can be based upon a sensor response generated by the test circuit fabricated into the die, wherein the sensor response is based upon a property of the die material. The signal can be compared with a reference value obtained from one or more test circuit(s) respectively located on one or more reference dies, wherein the reference dies are respectively cut from different wafers, and the location at which the reference dies were cut is known. If the measured signal matches the reference value, the die is deemed to be from the same cut location as the dies from which the reference value was obtained. If the measured signal does not match the reference value, the die is not authenticated.

Zortman, William A.↗
DOE OSTI2021

Large scale multi-node simulations of $\mathbb{Z}_2$ gauge theory quantum circuits using Google Cloud Platform

Simulating quantum field theories on a quantum computer is one of the most exciting fundamental physics applications of quantum information science. Dynamical time evolution of quantum fields is a challenge that is beyond the capabilities of classical computing, but it can teach us important lessons about the fundamental fabric of space and time. Whether we may answer scientific questions of interest using near-term quantum computing hardware is an open question that requires a detailed simulation study of quantum noise. Here we present a large scale simulation study powered by a multi-node implementation of qsim using the Google Cloud Platform. We additionally employ newly-developed GPU capabilities in qsim and show how Tensor Processing Units -- Application-specific Integrated Circuits (ASICs) specialized for Machine Learning -- may be used to dramatically speed up the simulation of large quantum circuits. We demonstrate the use of high performance cloud computing for simulating $\mathbb{Z}_2$ quantum field theories on system sizes up to 36 qubits. We find this lattice size is not able to simulate our problem and observable combination with sufficient accuracy, implying more challenging observables of interest for this theory are likely beyond the reach of classical computation using exact circuit simulation.

Gustafson, Erik↗
DOE OSTI2021

Simulations of Quantum Circuits with Approximate Noise using qsim and Cirq

We introduce multinode quantum trajectory simulations with qsim, an open source high performance simulator of quantum circuits. qsim can be used as a backend of Cirq, a Python software library for writing quantum circuits. We present a novel delayed inner product algorithm for quantum trajectories which can result in an order of magnitude speedup for low noise simulation. We also provide tools to use this framework in Google Cloud Platform, with high performance virtual machines in a single mode or multinode setting. Multinode configurations are well suited to simulate noisy quantum circuits with quantum trajectories. Finally, we introduce an approximate noise model for Google's experimental quantum computing platform and compare the results of noisy simulations with experiments for several quantum algorithms on Google's Quantum Computing Service.

Isakov, Sergei V.↗
DOE OSTI2021

Push-pull circuit with driving assisted by asymmetric charge sharing

A push-pull circuit for an opto-electronic device includes: an output node; a pull-up circuit that, in operation, controls a falling edge rate of an input signal to the opto-electronic device while sharing charge with the output node; and a pull-down circuit that, in operation, controls a rising edge rate of the input signal to the opto-electronic device while sharing charge with the output node.

Zhu, Zhubiao↗
DOE OSTI2022

Integrated silicon carbide diode rectifier circuits

An integrated silicon carbide rectifier circuit with an on chip isolation diode. The isolation diode can be a channel-to-substrate isolation diode or a channel to channel isolation diode. the circuit teaches an integrated diode rectification circuit for use with a two phase center tap transformer having a first voltage output, a second voltage output, and a center tap output with a single chip having a first half-wave rectifier connected to the first voltage output, a second half-wave rectifier connected to the second voltage output, and a floating substrate connection connected to the center tap output and an on chip first channel-to-substrate isolation diode electrically connected between the first half-wave rectifier and the floating substrate.

Barlow, Matthew↗
DOE OSTI2023

Turbomachine blade trailing edge cooling circuit with turn passage having set of obstructions

A turbomachine blade, and a coupon for a turbomachine blade, are disclosed. The blade may include an airfoil body having a pressure side and a suction side connected by a leading edge and a trailing edge, a coolant feed passage defined in the airfoil body, and a coolant reuse passage defined in the airfoil body. The blade may also include a first cooling circuit defined in the airfoil body. The first cooling circuit may include a rearward passage extending toward the trailing edge from and fluidly coupled to the coolant feed passage, and a radially spreading return passage extending away from the trailing edge toward and fluidly coupled to the coolant reuse passage. The cooling circuit may also include a radially extending turn passage coupling the rearward passage and the radially spreading return passage. A first set of obstructions may be positioned in the radially extending turn passage.

Dyson, Thomas Earl↗
DOE OSTI2023

Power converter having a gate drive circuit and method of operating

A power converter apparatus comprises a set of switching elements communicatively coupled with a set of gate drive circuits. Each gate drive circuit is configured to provide a respective drive signal to a corresponding switching element, each switching element being switchably responsive to the respective drive signal. The apparatus includes a controller module configured to control an output state of the power converter, and selectively change one of a respective gate resistance and a respective gate current of a corresponding subset of the gate drive circuits based on the output state of the power converter.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2023

Offset-aligned three-dimensional integrated circuit

A three-dimensional integrated circuit includes a first die structure having a first geometry. The first die structure includes a first region that operates with a first power density and a second region that operates with a second power density. The first power density is less than the second power density. The three-dimensional integrated circuit includes a second die structure having a second geometry. A stacked portion of the second die structure is aligned with the first region. The three-dimensional integrated circuit includes an additional die structure stacked with the first die structure and the second die structure. The additional die structure has the first geometry or the second geometry.

Wilkerson, Brett P.↗
DOE OSTI2025

Opportunities and Challenges of Computational Electromagnetics Methods for Superconducting Circuit Quantum Device Modeling: A Practical Review

High-fidelity numerical methods that model the physical layout of a device are essential for the design of many technologies. For methods that characterize electromagnetic effects, these numerical methods are referred to as computational electromagnetics (CEM) methods. Although the CEM research field is mature, emerging applications can still stress the capabilities of the techniques in use today. The design of superconducting circuit quantum devices falls in this category due to the unconventional material properties and important features of the devices covering nanometer to centimeter scales. Such multiscale devices can stress the fundamental properties of CEM tools which can lead to an increase in simulation times, a loss in accuracy, or even cause no solution to be reliably found. While these challenges are being investigated by CEM researchers, knowledge about them is limited in the broader community of users of these CEM tools. This review is meant to serve as a practical introduction to the fundamental aspects of the major CEM techniques that a researcher may need to choose between to model a device, as well as provide insight into what steps they may take to alleviate some of their challenges. Our focus is on highlighting the main concepts without rigorously deriving all the details, which can be found in many textbooks and articles. After covering the fundamentals, we discuss more advanced topics related to the challenges of modeling multiscale devices with specific examples from superconducting circuit quantum devices. We conclude with a discussion on future research directions that will be valuable for improving the ability to successfully design increasingly more sophisticated superconducting circuit quantum devices. Although our focus and examples are taken from this area, researchers from other fields will still benefit from the details discussed here.

Elkin, Samuel T. [Virginia Tech., Blacksburg]↗
DOE OSTI2018

Superconducting Multilayer High-Density Flexible Printed Circuit Board for Very High Thermal Resistance Interconnections

We have successively developed two superconducting flexible PCBs for cryogenic applications. The first one is monolayer, includes 552 tracks (10 µm wide, 20 µm spacing), and receives 24 wire-bonded integrated circuits. The second one is multilayer, with one track layer between two shielding layers interconnected by microvias, includes 37 tracks, and can be interconnected at both ends by wire bonding or by connectors. The first cold measurements have been performed and show good performances. The novelty of these products is, for the first one, the association of superconducting materials with very narrow pitch and bonded integrated circuits and, for the second one, the introduction of a superconducting multilayer structure interconnected by vias which is, to our knowledge, a world-first.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

A novel equivalent circuit for GDC-based solid oxide cells considering the variations of cell resistances under load

Regarding the mixed ionic-electronic conductive electrolytes, there are several constant assumptions about cell resistances and transference numbers. In this work, the charge transport frameworks of mixed conductive SOCs are comprehensively illustrated. And the independent external current density is introduced into the equivalent circuit for considering the variations of cell resistances under load. The updated expressions of cell resistances together with transference numbers are deduced rigorously based on the equivalent circuit. Electrolyte-supported NiO-GDC/GDC/LSCF cells are tested, and the experimental results validate the variations of cell resistances, especially for the polarization resistance. The comparisons show that electron hole resistances together with transference number calculated by the updated expressions are larger than those obtained by Liu’s method. More accurate transference number and cell resistances under load can be achieved by using the proposed method in this study.

25 ENERGY STORAGE↗
DOE OSTI2023

Wide Bandgap Solid State Circuit Breakers for AC and DC Microgrids

The objective of the project is to develop a new class of ultrafast, self-powered, programmable, autonomously operated, bidirectional solid state circuit breakers (SSCBs) using wide band gap (WBG) semiconductors with 1000X reduction in response time and 5X reduction in cost in comparison to commercial mechanical circuit breakers. In particular, we have developed two SSCB prototypes of 380VDC/220VAC/20A and 1000VDC/10A using GaN power switches for common distribution-level AC and DC voltages.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2020

Measurement of shunt resistance and conduction band offset in Cu(In,Ga)Se 2 solar cells through joint analysis of temperature and intensity dependence of open-circuit voltage and photoluminescence

Joint analysis studies of open-circuit voltage and photoluminescence intensity (PL-I) are reported for CuIn 1-x GaxSe 2 (CIGSe) solar cells. A range of compositions are investigated, including constant x=0.35 and x=0.55 as well as a graded composition profile having a minimum of x=0.25. Both the open circuit voltage and PL-I are measured as functions of temperature and illumination intensity. With these two measurements, a full model-based fitting of the temperature and illumination dependence allows extraction of the effects of window layer band offset and shunt resistance, in addition to bulk and interface recombination parameters. Finally, to quantitatively analyze the two distinct measurements jointly, the absolute PL-I is measured to obtain quasi-Fermi-level splitting.

14 SOLAR ENERGY↗