S–Te Interdiffusion within Grains and Grain Boundaries in CdTe Solar Cells
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14 SOLAR ENERGY↗
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Comparison of CIGS solar cells made with different structures and fabrication techniques
Cu(In, Ga)Se2 (CIGS)-based solar cells from six fabricators were characterized and compared. The devices had differing substrates, absorber deposition processes, buffer materials, and contact materials. The effective bandgaps of devices varied from 1.05 to 1.22 eV, with the lowest optical bandgaps occurring in those with metal-precursor absorber processes. Devices with Zn(O, S) or thin CdS buffers had quantum efficiencies above 90% down to 400 nm. Most voltages were 250-300 mV below the Shockley-Queisser limit for their bandgap. Electroluminescence intensity tracked well with the respective voltage deficits. Fill factor (FF) was as high as 95% of the maximum for each device's respective current and voltage, with higher FF corresponding to lower diode quality factors (~1.3). An in-depth analysis of FF losses determined that diode quality reflected in the quality factor, voltage-dependent photocurrent, and, to a lesser extent, the parasitic resistances are the limiting factors. As a result, different absorber processes and device structures led to a range of electrical and physical characteristics, yet this investigation showed that multiple fabrication pathways could lead to high-quality and high-efficiency solar cells.
14 SOLAR ENERGY↗
Effect of Window-Layer Materials on p-n Junction Location in Cu(In,Ga)Se 2 Solar Cells
We report on measurements of junction location in Cu(In,Ga)Se $_{2}$ (CIGS) solar cells with different window-layer materials by nm-resolution electrical potential/field profiling across the junction using Kelvin probe force microscopy imaging on cross-section of the devices. The results illustrate that the device with a CdS window layer (CdS/CIGS) has a buried homojunction located inside the CIGS absorber with ~40-nm junction depth, whereas the ZnOS/CIGS devices with and without partial electrolyte treatment prior to the window-layer deposition are similar, exhibiting a heterointerface junction. This junction location may contribute in part to the highest efficiency of the CdS/CIGS device among the three devices.
14 SOLAR ENERGY↗
Tailoring MgZnO/CdSeTe Interfaces for Photovoltaics
Mg x Zn 1-x O (MZO) shows great promise to replace CdS as a buffer layer in CdTe-based solar cells. It is more transparent, and the MZO bandgap and electron density can be tuned, thus providing flexibility in controlling the conduction band offsets and recombination rates between transparent conductive oxide/MZO and MZO/CdSeTe interfaces. Integrating this material into solar cell devices has been frustrated by the common observation of abnormal current-voltage curves. Simulations indicate that this anomalous behavior can be attributed to front interface barrier effects. Experiments demonstrate that this common MZO interface problem can be resolved experimentally by surface preparation, preheat steps, and removing oxygen during absorber deposition and CdCl 2 treatment. Oxygen during the cell fabrication process is likely to alter MZO properties and MZO/CdSeTe band alignment. After addressing these interface issues and modest optimization, devices with high short-circuit density of 29 mA/cm 2 and efficiency above 16% are demonstrated.
14 SOLAR ENERGY↗
Dual-Wavelength Time-Resolved Photoluminescence Study of CdSe x Te 1-x Surface Passivation via Mg y Zn 1-y O and Al 2 O 3
Voltage loss is currently one of the biggest challenges facing cadmium telluride (CdTe) based photovoltaics. Determining the location(s) of major voltage loss within the device stack (e.g., front/back interface, grain boundaries) is therefore of primary interest. Here, we present a custom-built time-resolved photoluminescence system with two excitation wavelengths - 670 (standard) and 405 nm - to probe the device stack at depths of approximately 130 and 35 nm, respectively; their comparison helps differentiate interface and bulk contributions to carrier lifetime. We apply this system to examine the passivation effect of two significant recent advances in CdTe: the incorporation of Se to form graded CdSe x Te 1-x and the replacement of CdS with Mg y Zn 1-y O. It is found that x = 0.2 Se is required to obtain lifetime improvements, primarily in the bulk. Additionally, evidence for trapping at the Mg y Zn 1-y O/CdSe x Te 1-x interface was observed. Furthermore, this indicates further work is required to sufficiently passivate the front interface.
CdSeTe↗
Emitter Choice for Epitaxial CdTe Solar Cells
High-quality epitaxial CdTe layers with low defect density and high carrier concentration have been demonstrated by several research groups. Nevertheless, one primary challenge for high-performance epitaxial CdTe solar cells is how to choose a suitable emitter partner for the junction formation. The numerical simulations show that a type I heterojunction with small conduction band offset (0.1 eV = ..delta..Ec = 0.3 eV) is necessary to maintain a good cell efficiency even with large interface recombination. Otherwise, a small 'cliff' can assist interface recombination causing smaller Voc, and a large 'spike' (..delta..Ec = 0.4 eV) can impede the photo current and lead to a reduction of JSC and FF. Among the three possible emitters, CdS, CdMgTe, and MgZnO, CdMgTe (with ~30% Mg) and MgZnO (with ~ 20% Mg) are likely to be a better choice since their type-I junction can tolerate a larger density of interface defects.
14 SOLAR ENERGY↗
Determination of the Electrical Junction in Cu(In, Ga)Se2 and Cu2ZnSnSe4 Solar Cells with 20-nm Spatial Resolution
We located the electrical junction (EJ) of Cu(In, Ga)Se2 (CIGS) and Cu2ZnSnSe4 (CZTS) solar cells with ~20-nm accuracy using a scanning capacitance spectroscopy (SCS) technique. A procedure was developed to prepare the cross-sectional samples and grow critical high-quality insulating layers for the SCS measurement. We found that CIGS has a buried homojunction with the EJ located at ~40 nm inside the CIGS/CdS interface. An n-type CIGS was probed in the region 10-30 nm away from the interface. By contrast, the CZTS/CdS cells have a heterointerface junction with a shallower EJ (~20 nm) than CIGS. The EJ is ~20 nm from the CZTS/CdS interface, which is consistent with asymmetrical carrier concentrations of the p-CZTS and n-CdS in a heterojunction cell. The unambiguous determination of the junction locations helped explain the large open circuit voltage difference between the state-of-the-art devices of CIGS and CZTS.
14 SOLAR ENERGY↗
Transmission Electron Microscopy Study on Degradation Mechanism of CdTe Thin-Film Solar Cells
In this work, we used transmission electron microscopy in a structural and chemical study on CdTe thin-film solar cells with different degradation degrees from the same photovoltaic module. We found that in the most-degraded CdTe solar cell, the accumulation of Na is precisely localized in the discontinuous part of the CdS layer. The local concentration of Na is determined to be ~18 at.%. This could be the root-cause degradation mechanism in CdTe thin-film solar cells. In addition, the notable accumulation of Na at the TCO/SLG interface could be responsible for the delamination of the TCO layer from the SLG substrate.
14 SOLAR ENERGY↗
Optoelectronic Characterization of Emerging Solar Absorber Cu3AsS4
Enargite Cu 3 AsS 4 is a promising absorber for thin-film solar cells but little is known about its optoelectronic properties. Here, we present photoluminescence (PL) spectroscopy, time-resolved terahertz spectroscopy (TRTS), timeresolved photoluminescence (TRPL) spectroscopy, and cyclic voltammetry (CV) measurements of enargite thin films. The results indicate promising defect characteristics with minority carrier lifetimes on the order of ns, and band alignments suggest that buffer layers besides CdS must be developed to achieve high efficiency Cu 3 AsS 4 solar cells.
14 SOLAR ENERGY↗
In-situ Microscopy Characterization of Cu(In,Ga)Se2 Potential-Induced Degradation
We report on the role of sodium in potentialinduced degradation (PID) of Cu(In, Ga)Se 2 (CIGS) solar cells. In-situ microscopy characterizations on AFM platform were performed on two stressed CIGS device under room temperature (RT) and high temperature (HT) at 85 degrees C. During PID stressing we observed depletion region gets wider as Na migrates, p-n junction becomes leaky at RT for over a month; and similar junction evolution was observed for HT-stressed sample, eventually the junction collapsed after 18 hours. The diode behaviors were confirmed by dark I-V measurement. Time-of Flight secondary-ion mass spectrometry reveals that the Na accumulates on ZnO and CdS side, as well as the upper layer of CIGS layer. The results indicate that Na drifted by the voltage applied on the soda-lime glass, then diffuse through the whole device. And the sodium profiles have different points of evolution due to the temperature differences between the two stressed samples. The consistent results unambiguously show how Na from substrate glass causes PID in CIGS solar cells.
14 SOLAR ENERGY↗
Characterization of n-Type Iodine-Doped and Indium-Doped CdTe/Cd-Se-Te Thin Films Fabricated by Close-Spaced Sublimation Epitaxy
In this study, n-type CdTe thin films, specifically iodine-doped CdTe (CdTe:I), indium-doped CdTe (CdTe:In), and indium-doped Cd-Se-Te (CST:In), were synthesized using close-spaced sublimation epitaxy (CSSE). Characterization techniques secondary ion mass spectrometry (SIMS), electron backscatter diffraction (EBSD), Hall-effect measurements, and time-resolved photoluminescence (TRPL) were employed to analyze the chemical, structural, and electronic properties of these materials. The results indicated epitaxial single crystal CSSE films grew on the single crystal substrates, with carrier density ranging from 10^14 - 10^16 cm -3 , and after post-annealing, the minority-carrier lifetimes reach near the radiative limit. Additionally, a preliminary exploration of homojunction structures with an n- type (CdTe:In /CST:In /CdTe:I) /CdTe:P /Cu /Mo configuration was performed. The best device performance was achieved with CdTe:I including CdS aiding in band alignment, resulting in a power conversion efficiency (..eta..) of 2.61% with open circuit voltage (Voc) of 850 mV, fill factor (FF) of 47.8%, and short-circuit current (Jsc) of 6.44 mA/cm 2 . The observed low Jsc and efficiency may be attributed to a buried junction and a poor interface, due to dopant interdiffusion. Consequently, further investigations focusing on interface optimization, diffusion blocking, and reduced recombination through passivation, are crucial to enhancing the efficiency of CSSE CdTe homojunction devices in the future.
cadmium compounds↗
Correlations of Cu(In, Ga)Se2 Imaging with Device Performance, Defects, and Microstructural Properties
Camera imaging techniques have been used for the characterization of Cu(In,Ga)Se{sub 2} (CIGS) solar cells. Photoluminescence (PL) imaging shows brightness variations after the deposition of the CIGS layer that persist through CdS deposition and subsequent processing steps to finish the devices. PL and electroluminescence imaging on finished cells show a correlation to the devices corresponding efficiency and open-circuit voltage (V{sub OC}), and dark defect-related spots correspond to bright spots on images from illuminated lock-in thermography (LIT) and forward-bias dark LIT. These image-detected defect areas are weak diodes and shunts. Imaging provides locations of defects detrimental to solar cell performance. Some of these defects are analyzed in more detail by scanning electron microscopy using cross-sectional views.
14 SOLAR ENERGY↗
Effect of the cadmium chloride treatment on RF sputtered Cd{sub 0.6}Zn{sub 0.4}Te films for application in multijunction solar cells
Single phase Cd{sub 0.6}Zn{sub 0.4}Te (CdZnTe) films of 1 μm thickness were deposited by radio frequency planar magnetron sputter deposition on commercial soda lime glass samples coated with fluorine-doped tin oxide and cadmium sulphide (CdS). The stack was then treated with cadmium chloride (CdCl{sub 2}) at different temperatures using a constant treatment time. The effect of the CdCl{sub 2} treatment was studied using optical, materials, and electrical characterization of the samples and compared with the as-deposited CdZnTe film with the same stack configuration. The band gap deduced from Tauc plots on the as-deposited CdZnTe thin film was 1.72 eV. The deposited film had good crystalline quality with a preferred orientation along the {111} plane. After the CdCl{sub 2} treatment, the absorption edge shifted toward longer wavelength region and new peaks corresponding to cadmium telluride (CdTe) emerged in the x-ray diffraction pattern. This suggested loss of zinc after the CdCl{sub 2} treatment. The cross sectional transmission electron microscope images of the sample treated at 400 °C and the energy dispersive elemental maps revealed the absence of chlorine along the grain boundaries of CdZnTe and residual CdTe. The presence of chlorine in the CdTe devices plays a vital role in drastically improving the device performance which was not observed in CdZnTe samples treated with CdCl{sub 2}. The loss of zinc from the surface and incomplete recrystallization of the grains together with the presence of high densities of stacking faults were observed. The surface images using scanning electron microscopy showed that the morphology of the grains changed from small spherical shape to large grains formed due to the fusion of small grains with distinct grain boundaries visible at the higher CdCl{sub 2} treatment temperatures. The absence of chlorine along the grain boundaries, incomplete recrystallization and distinct grain boundaries is understood to cause the poor performance of the fabricated devices.
36 MATERIALS SCIENCE↗
SU-CD-PinS Room/Hall E-00: HAZMAT Training for the Medical Physicist - Part I
Medical Physicists are frequently involved in shipping radioactive materials or supervising those who do. Current U.S. Department of Transportation Hazardous Material Regulations, 49 CFR Parts 171 - 185, require hazmat employees to have documented training specified in 49 CFR 172 Subpart H. A hazmat employee is defined as an individual who: (1) loads, unloads or handles hazardous material; (2) manufactures, tests, reconditions, repairs, modifies, marks or otherwise represents containers, drums or packagings as qualified for use in the transportation of hazardous materials; (3) prepares hazardous materials for transportation; (4) is responsible for safety of transporting hazardous materials; or (5) operates a vehicle used to transport hazardous materials. Recurrent training is required at least once every three years. (The IATA two-year training interval is not applicable and is generally misunderstood.) FAA has escalated inspection and enforcement. Facilities who ship radiopharmaceuticals to other laboratories, return radiopharmaceuticals or radioactive sources to suppliers, or otherwise ship radioactive materials have been cited for failure to provide and document the required training. The interrelationship of transportation regulations, 49 CFR, IATA, ICAO and other transportation regulations, which are frequently misunderstood, will be explained. The course will cover typical shipments by air and highway which are encountered in a medical institution. Items such as fissile materials, highway route controlled quantities, rail shipments, vessel shipments and such will be omitted; although specific questions may be addressed. A major objective of the course is to present the process of shipping radioactive material in a sequential and logical fashion. How radioactive materials for transportation purposes are defined by activity concentrations for exempt materials and activity limits for exempt consignments will be explained. Radioactive material shipments of excepted packages and Type A packages will be emphasized. The program is designed to meet the function specific DOT training requirements for shippers of medical radioactive materials. General awareness training and security awareness training can be obtained from two free DOT training CDs. Safety training and security awareness training is generally satisfied by the training required under the institution’s radioactive material license. For shippers of radioactive Yellow III labeled packages an in-depth written security plan and training are no longer required as of April 8, 2010. In general almost all shippers of medical radioactive material are now not required to have an in-depth security plan. Contents of general awareness training, security awareness training and in-depth security plans will be briefly outlined. It is the hazmat employer’s responsibility to ensure that each hazmat employee is properly trained. No third party can fulfill that requirement. It is the hazmat employer’s responsibility to determine the degree to which this course meets the employer’s requirements, including contents of the course and the examination. Participants will gain sufficient knowledge to prepare hazmat training programs for others in their institutions. A handout will be posted which should be printed out and brought to the course for reference during the presentation. The handout will also satisfy part of the training documentation required by DOT. A feature handout section is a composite table which provides A1, A2, RQ, Exempt Concentration, and Exempt Consignment values in a single table in both Becquerel and Curie units. Course attendance will be certified through the AAPM CEU documentation system. Learning Objectives: Understand the regulatory requirements for shipping radioactive materials. Understand the regulatory requirements for training of hazmat employees. Comprehend how to classify, package, mark, label, document, placard, and transport radioactive materials.
60 APPLIED LIFE SCIENCES↗
SU-CD-PinS Room/Hall E-01
Medical Physicists are frequently involved in shipping radioactive materials or supervising those who do. Current U.S. Department of Transportation Hazardous Material Regulations, 49 CFR Parts 171 - 185, require hazmat employees to have documented training specified in 49 CFR 172 Subpart H. A hazmat employee is defined as an individual who: (1) loads, unloads or handles hazardous material; (2) manufactures, tests, reconditions, repairs, modifies, marks or otherwise represents containers, drums or packagings as qualified for use in the transportation of hazardous materials; (3) prepares hazardous materials for transportation; (4) is responsible for safety of transporting hazardous materials; or (5) operates a vehicle used to transport hazardous materials. Recurrent training is required at least once every three years. (The IATA two-year training interval is not applicable and is generally misunderstood.) FAA has escalated inspection and enforcement. Facilities who ship radiopharmaceuticals to other laboratories, return radiopharmaceuticals or radioactive sources to suppliers, or otherwise ship radioactive materials have been cited for failure to provide and document the required training. The interrelationship of transportation regulations, 49 CFR, IATA, ICAO and other transportation regulations, which are frequently misunderstood, will be explained. The course will cover typical shipments by air and highway which are encountered in a medical institution. Items such as fissile materials, highway route controlled quantities, rail shipments, vessel shipments and such will be omitted; although specific questions may be addressed. A major objective of the course is to present the process of shipping radioactive material in a sequential and logical fashion. How radioactive materials for transportation purposes are defined by activity concentrations for exempt materials and activity limits for exempt consignments will be explained. Radioactive material shipments of excepted packages and Type A packages will be emphasized. The program is designed to meet the function specific DOT training requirements for shippers of medical radioactive materials. General awareness training and security awareness training can be obtained from two free DOT training CDs. Safety training and security awareness training is generally satisfied by the training required under the institution’s radioactive material license. For shippers of radioactive Yellow III labeled packages an in-depth written security plan and training are no longer required as of April 8, 2010. In general almost all shippers of medical radioactive material are now not required to have an in-depth security plan. Contents of general awareness training, security awareness training and in-depth security plans will be briefly outlined. It is the hazmat employer’s responsibility to ensure that each hazmat employee is properly trained. No third party can fulfill that requirement. It is the hazmat employer’s responsibility to determine the degree to which this course meets the employer’s requirements, including contents of the course and the examination. Participants will gain sufficient knowledge to prepare hazmat training programs for others in their institutions. A handout will be posted which should be printed out and brought to the course for reference during the presentation. The handout will also satisfy part of the training documentation required by DOT. A feature handout section is a composite table which provides A1, A2, RQ, Exempt Concentration, and Exempt Consignment values in a single table in both Becquerel and Curie units. Course attendance will be certified through the AAPM CEU documentation system. Learning Objectives: Understand the regulatory requirements for shipping radioactive materials. Understand the regulatory requirements for training of hazmat employees. Comprehend how to classify, package, mark, label, document, placard, and transport radioactive materials.
61 RADIATION PROTECTION AND DOSIMETRY↗
SU-G-PinS Room/Hall E-00: HAZMAT Training for the Medical Physicist - Part II
Medical Physicists are frequently involved in shipping radioactive materials or supervising those who do. Current U.S. Department of Transportation Hazardous Material Regulations, 49 CFR Parts 171 - 185, require hazmat employees to have documented training specified in 49 CFR 172 Subpart H. A hazmat employee is defined as an individual who: (1) loads, unloads or handles hazardous material; (2) manufactures, tests, reconditions, repairs, modifies, marks or otherwise represents containers, drums or packagings as qualified for use in the transportation of hazardous materials; (3) prepares hazardous materials for transportation; (4) is responsible for safety of transporting hazardous materials; or (5) operates a vehicle used to transport hazardous materials. Recurrent training is required at least once every three years. (The IATA two year training interval is not applicable and is generally misunderstood.) FAA has escalated inspection and enforcement. Facilities who ship radiopharmaceuticals to other laboratories, return radiopharmaceuticals or radioactive sources to suppliers, or otherwise ship radioactive materials have been cited for failure to provide and document the required training. The interrelationship of transportation regulations, 49 CFR, IATA, ICAO and other transportation regulations, which are frequently misunderstood, will be explained. The course will cover typical shipments by air and highway which are encountered in a medical institution. Items such as fissile materials, highway route controlled quantities, rail shipments, vessel shipments and such will be omitted; although specific questions may be addressed. A major objective of the course is to present the process of shipping radioactive material in a sequential and logical fashion. How radioactive materials for transportation purposes are defined by activity concentrations for exempt materials and activity limits for exempt consignments will be explained. Radioactive material shipments of excepted packages and Type A packages will be emphasized. The program is designed to meet the function specific DOT training requirements for shippers of medical radioactive materials. General awareness training and security awareness training can be obtained from two free DOT training CDs. Safety training and security awareness training is generally satisfied by the training required under the institution’s radioactive material license. For shippers of radioactive Yellow III labeled packages an in-depth written security plan and training are no longer required as of April 8, 2010. In general almost all shippers of medical radioactive material are now not required to have an in-depth security plan. Contents of general awareness training, security awareness training and in-depth security plans will be briefly outlined. It is the hazmat employer’s responsibility to ensure that each hazmat employee is properly trained. No third party can fulfill that requirement. It is the hazmat employer’s responsibility to determine the degree to which this course meets the employer’s requirements, including contents of the course and the examination. Participants will gain sufficient knowledge to prepare hazmat training programs for others in their institutions. A handout will be posted which should be printed out and brought to the course for reference during the presentation. The handout will also satisfy part of the training documentation required by DOT. A feature handout section is a composite table which provides A1, A2, RQ, Exempt Concentration, and Exempt Consignment values in a single table in both Becquerel and Curie units. Course attendance will be certified through the AAPM CEU documentation system. Learning Objectives: Understand the regulatory requirements for shipping radioactive materials. Understand the regulatory requirements for training of hazmat employees. Comprehend how to classify, package, mark, label, document, placard, and transport radioactive materials.
60 APPLIED LIFE SCIENCES↗
SU-G-PinS Room/Hall E-01
Medical Physicists are frequently involved in shipping radioactive materials or supervising those who do. Current U.S. Department of Transportation Hazardous Material Regulations, 49 CFR Parts 171 - 185, require hazmat employees to have documented training specified in 49 CFR 172 Subpart H. A hazmat employee is defined as an individual who: (1) loads, unloads or handles hazardous material; (2) manufactures, tests, reconditions, repairs, modifies, marks or otherwise represents containers, drums or packagings as qualified for use in the transportation of hazardous materials; (3) prepares hazardous materials for transportation; (4) is responsible for safety of transporting hazardous materials; or (5) operates a vehicle used to transport hazardous materials. Recurrent training is required at least once every three years. (The IATA two year training interval is not applicable and is generally misunderstood.) FAA has escalated inspection and enforcement. Facilities who ship radiopharmaceuticals to other laboratories, return radiopharmaceuticals or radioactive sources to suppliers, or otherwise ship radioactive materials have been cited for failure to provide and document the required training. The interrelationship of transportation regulations, 49 CFR, IATA, ICAO and other transportation regulations, which are frequently misunderstood, will be explained. The course will cover typical shipments by air and highway which are encountered in a medical institution. Items such as fissile materials, highway route controlled quantities, rail shipments, vessel shipments and such will be omitted; although specific questions may be addressed. A major objective of the course is to present the process of shipping radioactive material in a sequential and logical fashion. How radioactive materials for transportation purposes are defined by activity concentrations for exempt materials and activity limits for exempt consignments will be explained. Radioactive material shipments of excepted packages and Type A packages will be emphasized. The program is designed to meet the function specific DOT training requirements for shippers of medical radioactive materials. General awareness training and security awareness training can be obtained from two free DOT training CDs. Safety training and security awareness training is generally satisfied by the training required under the institution’s radioactive material license. For shippers of radioactive Yellow III labeled packages an in-depth written security plan and training are no longer required as of April 8, 2010. In general almost all shippers of medical radioactive material are now not required to have an in-depth security plan. Contents of general awareness training, security awareness training and in-depth security plans will be briefly outlined. It is the hazmat employer’s responsibility to ensure that each hazmat employee is properly trained. No third party can fulfill that requirement. It is the hazmat employer’s responsibility to determine the degree to which this course meets the employer’s requirements, including contents of the course and the examination. Participants will gain sufficient knowledge to prepare hazmat training programs for others in their institutions. A handout will be posted which should be printed out and brought to the course for reference during the presentation. The handout will also satisfy part of the training documentation required by DOT. A feature handout section is a composite table which provides A1, A2, RQ, Exempt Concentration, and Exempt Consignment values in a single table in both Becquerel and Curie units. Course attendance will be certified through the AAPM CEU documentation system. Learning Objectives: Understand the regulatory requirements for shipping radioactive materials. Understand the regulatory requirements for training of hazmat employees. Comprehend how to classify, package, mark, label, document, placard, and transport radioactive materials.
60 APPLIED LIFE SCIENCES↗
WE-H-BRA-08: A Monte Carlo Cell Nucleus Model for Assessing Cell Survival Probability Based On Particle Track Structure Analysis
Purpose: To correlate the damage produced by particles of different types and qualities to cell survival on the basis of nanodosimetric analysis and advanced DNA structures in the cell nucleus. Methods: A Monte Carlo code was developed to simulate subnuclear DNA chromatin fibers (CFs) of 30nm utilizing a mean-free-path approach common to radiation transport. The cell nucleus was modeled as a spherical region containing 6000 chromatin-dense domains (CDs) of 400nm diameter, with additional CFs modeled in a sparser interchromatin region. The Geant4-DNA code was utilized to produce a particle track database representing various particles at different energies and dose quantities. These tracks were used to stochastically position the DNA structures based on their mean free path to interaction with CFs. Excitation and ionization events intersecting CFs were analyzed using the DBSCAN clustering algorithm for assessment of the likelihood of producing DSBs. Simulated DSBs were then assessed based on their proximity to one another for a probability of inducing cell death. Results: Variations in energy deposition to chromatin fibers match expectations based on differences in particle track structure. The quality of damage to CFs based on different particle types indicate more severe damage by high-LET radiation than low-LET radiation of identical particles. In addition, the model indicates more severe damage by protons than of alpha particles of same LET, which is consistent with differences in their track structure. Cell survival curves have been produced showing the L-Q behavior of sparsely ionizing radiation. Conclusion: Initial results indicate the feasibility of producing cell survival curves based on the Monte Carlo cell nucleus method. Accurate correlation between simulated DNA damage to cell survival on the basis of nanodosimetric analysis can provide insight into the biological responses to various radiation types. Current efforts are directed at producing cell survival curves for high-LET radiation.
60 APPLIED LIFE SCIENCES↗